JP5271267B2 - エッチング処理を実行する前のマスク層処理方法 - Google Patents

エッチング処理を実行する前のマスク層処理方法 Download PDF

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Publication number
JP5271267B2
JP5271267B2 JP2009523873A JP2009523873A JP5271267B2 JP 5271267 B2 JP5271267 B2 JP 5271267B2 JP 2009523873 A JP2009523873 A JP 2009523873A JP 2009523873 A JP2009523873 A JP 2009523873A JP 5271267 B2 JP5271267 B2 JP 5271267B2
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JP
Japan
Prior art keywords
plasma
mask layer
electron beam
output
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009523873A
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English (en)
Japanese (ja)
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JP2010500758A (ja
Inventor
エル．ジー． ヴェントゼック，ピーター
チェン，リー
公 輿石
郁夫 沢田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority claimed from US11/499,678 external-priority patent/US7449414B2/en
Priority claimed from US11/499,679 external-priority patent/US7572386B2/en
Priority claimed from US11/499,680 external-priority patent/US7642193B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2010500758A publication Critical patent/JP2010500758A/ja
Application granted granted Critical
Publication of JP5271267B2 publication Critical patent/JP5271267B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2009523873A 2006-08-07 2007-06-05 エッチング処理を実行する前のマスク層処理方法 Expired - Fee Related JP5271267B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US11/499,678 US7449414B2 (en) 2006-08-07 2006-08-07 Method of treating a mask layer prior to performing an etching process
US11/499,679 US7572386B2 (en) 2006-08-07 2006-08-07 Method of treating a mask layer prior to performing an etching process
US11/499,680 2006-08-07
US11/499,680 US7642193B2 (en) 2006-08-07 2006-08-07 Method of treating a mask layer prior to performing an etching process
US11/499,678 2006-08-07
US11/499,679 2006-08-07
PCT/US2007/070375 WO2008021609A1 (en) 2006-08-07 2007-06-05 Method of treating a mask layer prior to performing an etching process

Publications (2)

Publication Number Publication Date
JP2010500758A JP2010500758A (ja) 2010-01-07
JP5271267B2 true JP5271267B2 (ja) 2013-08-21

Family

ID=39082334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009523873A Expired - Fee Related JP5271267B2 (ja) 2006-08-07 2007-06-05 エッチング処理を実行する前のマスク層処理方法

Country Status (4)

Country Link
JP (1) JP5271267B2 (ko)
KR (1) KR101346897B1 (ko)
TW (2) TWI445074B (ko)
WO (1) WO2008021609A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701159A (zh) * 2013-12-10 2015-06-10 东京毅力科创株式会社 蚀刻方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5578782B2 (ja) * 2008-03-31 2014-08-27 東京エレクトロン株式会社 プラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP5171683B2 (ja) 2009-02-18 2013-03-27 東京エレクトロン株式会社 プラズマ処理方法
JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US9373521B2 (en) 2010-02-24 2016-06-21 Tokyo Electron Limited Etching processing method
CN102543687B (zh) * 2011-11-30 2015-08-05 中微半导体设备(上海)有限公司 掩膜层的刻蚀方法、刻蚀装置及层间介质层的刻蚀方法
US9368368B2 (en) * 2014-07-21 2016-06-14 Tokyo Electron Limited Method for increasing oxide etch selectivity
JP6587580B2 (ja) 2016-06-10 2019-10-09 東京エレクトロン株式会社 エッチング処理方法
US10020183B1 (en) * 2017-06-29 2018-07-10 Lam Research Corporation Edge roughness reduction
JP2023170791A (ja) * 2022-05-20 2023-12-01 東京エレクトロン株式会社 改質方法及び改質装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641234A (en) * 1979-09-10 1981-04-17 Asahi Chem Ind Co Ltd Novel molding dope composition
US5597438A (en) * 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
US7169695B2 (en) 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP4672456B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP4672455B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP5011782B2 (ja) * 2006-03-28 2012-08-29 東京エレクトロン株式会社 半導体装置の製造方法、プラズマ処理装置及び記憶媒体。
US8083961B2 (en) * 2006-07-31 2011-12-27 Tokyo Electron Limited Method and system for controlling the uniformity of a ballistic electron beam by RF modulation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701159A (zh) * 2013-12-10 2015-06-10 东京毅力科创株式会社 蚀刻方法
CN104701159B (zh) * 2013-12-10 2018-05-08 东京毅力科创株式会社 蚀刻方法

Also Published As

Publication number Publication date
KR20090037495A (ko) 2009-04-15
TWI445074B (zh) 2014-07-11
TW201419411A (zh) 2014-05-16
KR101346897B1 (ko) 2014-01-02
WO2008021609A1 (en) 2008-02-21
JP2010500758A (ja) 2010-01-07
TWI443743B (zh) 2014-07-01
TW200828432A (en) 2008-07-01

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