JP5268168B2 - 多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法 - Google Patents
多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法 Download PDFInfo
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- JP5268168B2 JP5268168B2 JP2011051506A JP2011051506A JP5268168B2 JP 5268168 B2 JP5268168 B2 JP 5268168B2 JP 2011051506 A JP2011051506 A JP 2011051506A JP 2011051506 A JP2011051506 A JP 2011051506A JP 5268168 B2 JP5268168 B2 JP 5268168B2
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- film
- substrate
- multilayer reflective
- conductive film
- reflective film
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/3665—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties specially adapted for use as photomask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011051506A JP5268168B2 (ja) | 2003-12-25 | 2011-03-09 | 多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003429072 | 2003-12-25 | ||
| JP2003429072 | 2003-12-25 | ||
| JP2011051506A JP5268168B2 (ja) | 2003-12-25 | 2011-03-09 | 多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004369863A Division JP2005210093A (ja) | 2003-12-25 | 2004-12-21 | 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011124612A JP2011124612A (ja) | 2011-06-23 |
| JP2011124612A5 JP2011124612A5 (https=) | 2011-08-04 |
| JP5268168B2 true JP5268168B2 (ja) | 2013-08-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011051506A Expired - Lifetime JP5268168B2 (ja) | 2003-12-25 | 2011-03-09 | 多層反射膜付き基板の製造方法、露光用反射型マスクブランクスの製造方法及び露光用反射型マスクの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050238922A1 (https=) |
| JP (1) | JP5268168B2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101503932B1 (ko) * | 2005-09-30 | 2015-03-18 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조방법과 반도체 장치의 제조 방법 |
| WO2007069417A1 (ja) * | 2005-12-12 | 2007-06-21 | Asahi Glass Company, Limited | Euvリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板 |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| US7638393B2 (en) * | 2006-05-02 | 2009-12-29 | Macronix International Co., Ltd. | Non-volatile memory device including nitrogen pocket implants and methods for making the same |
| JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
| JP5609663B2 (ja) | 2011-01-18 | 2014-10-22 | 旭硝子株式会社 | ガラス基板保持手段、およびそれを用いたeuvマスクブランクスの製造方法 |
| WO2012105698A1 (ja) | 2011-02-04 | 2012-08-09 | 旭硝子株式会社 | 導電膜付基板、多層反射膜付基板、およびeuvリソグラフィ用反射型マスクブランク |
| JP6157874B2 (ja) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | Euvリソグラフィー用多層反射膜付き基板及びeuvリソグラフィー用反射型マスクブランク、並びにeuvリソグラフィー用反射型マスク及び半導体装置の製造方法 |
| JP6186962B2 (ja) * | 2013-07-08 | 2017-08-30 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、および、euvリソグラフィ用反射型マスク |
| JP6186996B2 (ja) * | 2013-07-30 | 2017-08-30 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク、および、euvリソグラフィ用反射型マスク |
| WO2016204051A1 (ja) * | 2015-06-17 | 2016-12-22 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| KR20170060379A (ko) * | 2015-11-24 | 2017-06-01 | 국방과학연구소 | 단자외선 영역의 라만 에지 필터 및 이의 제작 방법 |
| JP6863169B2 (ja) * | 2017-08-15 | 2021-04-21 | Agc株式会社 | 反射型マスクブランク、および反射型マスク |
| CN110119072B (zh) * | 2018-02-06 | 2021-05-14 | 志圣科技(广州)有限公司 | 曝光组件及曝光装置 |
| US10768534B2 (en) | 2018-08-14 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography apparatus and method and method for handling wafer |
| JP7350571B2 (ja) | 2019-08-30 | 2023-09-26 | Hoya株式会社 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| US11111176B1 (en) * | 2020-02-27 | 2021-09-07 | Applied Materials, Inc. | Methods and apparatus of processing transparent substrates |
| US11829062B2 (en) * | 2020-05-22 | 2023-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV photo masks and manufacturing method thereof |
| CN113238455B (zh) | 2020-05-22 | 2024-12-20 | 台湾积体电路制造股份有限公司 | Euv光掩模及其制造方法 |
| KR102464780B1 (ko) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크 |
| US12210279B2 (en) | 2021-05-27 | 2025-01-28 | AGC Inc. | Electroconductive-film-coated substrate and reflective mask blank |
| US12517425B2 (en) * | 2021-08-30 | 2026-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reticle enclosure for lithography systems |
| KR20240025708A (ko) * | 2021-09-28 | 2024-02-27 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 도전막을 구비한 기판 |
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| JPS5217815A (en) * | 1975-07-30 | 1977-02-10 | Fuji Photo Film Co Ltd | Substrate and material using the same |
| JPS593437A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置製造用基板 |
| JPS6039047U (ja) * | 1983-08-24 | 1985-03-18 | 凸版印刷株式会社 | マスクブランク板 |
| JPS60195546A (ja) * | 1984-03-19 | 1985-10-04 | Hitachi Ltd | マスク用基板 |
| KR100311704B1 (ko) * | 1993-08-17 | 2001-12-15 | 기타오카 다카시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법 |
| US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
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| JP4027458B2 (ja) * | 1996-12-14 | 2007-12-26 | Hoya株式会社 | X線マスクブランク及びその製造方法並びにx線マスクの製造方法 |
| JPH1152544A (ja) * | 1997-08-04 | 1999-02-26 | Fujitsu Ltd | フォトマスク及びその製造方法、並びにベーキング装置 |
| US6081318A (en) * | 1998-06-25 | 2000-06-27 | United Microelectronics Corp. | Installation for fabricating double-sided photomask |
| KR100424853B1 (ko) * | 1998-07-31 | 2004-03-27 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크, 이들의 제조방법 및미세패턴의 형성방법 |
| JP2000077306A (ja) * | 1998-08-31 | 2000-03-14 | Nikon Corp | 反射マスクおよびx線投影露光装置 |
| WO2000075727A2 (en) * | 1999-06-07 | 2000-12-14 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| US6737201B2 (en) * | 2000-11-22 | 2004-05-18 | Hoya Corporation | Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device |
| JP3939132B2 (ja) * | 2000-11-22 | 2007-07-04 | Hoya株式会社 | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
| JP4371569B2 (ja) * | 2000-12-25 | 2009-11-25 | 信越化学工業株式会社 | マグネトロンスパッタ装置とそれを用いたフォトマスクブランクの製造方法 |
| DE10206143B4 (de) * | 2001-02-14 | 2006-11-16 | Hoya Corp. | Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske |
| JP2003014893A (ja) * | 2001-04-27 | 2003-01-15 | Nikon Corp | 多層膜反射鏡及び露光装置 |
| US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
| JP4521753B2 (ja) * | 2003-03-19 | 2010-08-11 | Hoya株式会社 | 反射型マスクの製造方法及び半導体装置の製造方法 |
-
2004
- 2004-12-22 US US11/017,873 patent/US20050238922A1/en not_active Abandoned
-
2011
- 2011-03-09 JP JP2011051506A patent/JP5268168B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20050238922A1 (en) | 2005-10-27 |
| JP2011124612A (ja) | 2011-06-23 |
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