JP5263546B2 - 集積回路デバイスのためのキャリアレスチップパッケージ、および、それを作成する方法 - Google Patents
集積回路デバイスのためのキャリアレスチップパッケージ、および、それを作成する方法 Download PDFInfo
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- JP5263546B2 JP5263546B2 JP2009501655A JP2009501655A JP5263546B2 JP 5263546 B2 JP5263546 B2 JP 5263546B2 JP 2009501655 A JP2009501655 A JP 2009501655A JP 2009501655 A JP2009501655 A JP 2009501655A JP 5263546 B2 JP5263546 B2 JP 5263546B2
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Description
Claims (9)
- 集積回路チップを、導電性層を含む犠牲構造に隣接して配置するステップであって、
前記集積回路チップが裏面を含むものと、
複数のワイヤボンドを、前記集積回路チップに取り付けるステップと、
前記複数のワイヤボンドを、前記犠牲構造の前記導電性層に取り付けることにより、
前記ワイヤボンドのそれぞれに接続される導電性部分を形成するステップと、
前記集積回路チップ、前記ワイヤボンド、および、前記犠牲構造に隣接してカプセル材料を形成するステップと、
前記犠牲構造を取り除くことにより、前記集積回路チップの前記裏面、および、前記複数のワイヤボンドのそれぞれに導電的に接続される、前記導電性部分の少なくとも一部分、が露出されるステップと、
を含む、方法。 - 前記犠牲構造を取り除くステップの後で、前記カプセル材料の余分な部分をトリムするステップをさらに含む、請求項1の方法。
- 前記カプセル材料の前記余分な部分をトリムする前記ステップが、前記集積回路チップの側面から、前記カプセル材料の側面までの距離が0.1mmから0.4mmの範囲であるように、行われる、請求項2の方法。
- 前記犠牲構造を取り除くステップが、前記犠牲構造を取り除くために、平坦化処理を行うステップを含む、請求項1の方法。
- 前記犠牲構造を取り除くステップが、前記犠牲構造を取り除くために、少なくとも一回の化学機械研磨処理を行うステップを含む、請求項1の方法。
- 前記犠牲構造を取り除くステップが、前記犠牲構造を取り除くために、少なくとも一回の研削処理を行うステップを含む、請求項1の方法。
- 前記犠牲構造を取り除くステップが、前記犠牲構造を取り除くために、少なくとも一回のエッチング処理を行うステップを含む、請求項1の方法。
- 前記ワイヤボンドに導電的に接続された前記露出した部分に、導電性構造を導電的に接続するステップを、さらに含む、請求項1の方法。
- 前記犠牲構造を取り除くステップが、前記カプセル材料の表面をさらに露出する、請求項1の方法。
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US11/384,734 | 2006-03-20 | ||
US11/384,734 US20070216033A1 (en) | 2006-03-20 | 2006-03-20 | Carrierless chip package for integrated circuit devices, and methods of making same |
PCT/US2007/064028 WO2007109486A2 (en) | 2006-03-20 | 2007-03-15 | Carrierless chip package for integrated circuit devices, and methods of making same |
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2006
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JP2009530870A (ja) | 2009-08-27 |
US7504285B2 (en) | 2009-03-17 |
US20070216033A1 (en) | 2007-09-20 |
EP2005469A2 (en) | 2008-12-24 |
WO2007109486A3 (en) | 2008-02-28 |
EP2005469B1 (en) | 2019-08-14 |
WO2007109486A2 (en) | 2007-09-27 |
US20080136001A1 (en) | 2008-06-12 |
US9673121B2 (en) | 2017-06-06 |
US20170271228A1 (en) | 2017-09-21 |
KR101032546B1 (ko) | 2011-05-06 |
US20070249100A1 (en) | 2007-10-25 |
KR20090004975A (ko) | 2009-01-12 |
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