JP5259289B2 - 一体化されたサーミスタ及び金属素子装置並びに方法 - Google Patents
一体化されたサーミスタ及び金属素子装置並びに方法 Download PDFInfo
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- JP5259289B2 JP5259289B2 JP2008192714A JP2008192714A JP5259289B2 JP 5259289 B2 JP5259289 B2 JP 5259289B2 JP 2008192714 A JP2008192714 A JP 2008192714A JP 2008192714 A JP2008192714 A JP 2008192714A JP 5259289 B2 JP5259289 B2 JP 5259289B2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/047—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a temperature responsive switch
- H02H5/048—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a temperature responsive switch additionally responsive to excess current due to heating of the switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
- H01H85/0415—Miniature fuses cartridge type
- H01H85/0418—Miniature fuses cartridge type with ferrule type end contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/046—Fuses formed as printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/048—Fuse resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
- H01H2085/0414—Surface mounted fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/048—Fuse resistors
- H01H2085/0483—Fuse resistors with temperature dependent resistor, e.g. thermistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Fuses (AREA)
- Thermistors And Varistors (AREA)
Description
12 上部の絶縁基板
14 下部の絶縁基板
16 第2の銅層(電極)
18 第3の銅層(電極)
20a 上部の銅層
20b 下部の銅層
22a及び22b パッド領域
24 金属ヒューズ素子
26a及び26b 端子領域
28 異種金属スポット
30 正の温度係数(“PTC”)層(PTCサーミスタ層)
32 保護被覆
34 しるし
36a及び36b 端子
46及び48 一対の開口
Claims (23)
- 電気的な絶縁基板と、
該基板上に位置するヒューズ素子と、
該基板に接続された正の温度係数(“PTC”)サーミスタ層と、ここに、ヒューズ素子は、PTCサーミスタ層よりも低い抵抗を有し、
電流が、(i)最初に、正常動作下でヒューズ素子及びPTCサーミスタ層を通って流れ、そして(ii)ヒューズ素子の開放後には正常動作下でPTCサーミスタ層を通して流れるように、ヒューズ素子及びPTCサーミスタ層に並列に電気的に接続された第1及び第2の導体と、
を備えた回路保護装置。 - ヒューズ素子及びPTCサーミスタ層は、少なくとも同様の電流定格を有する請求項1に記載の回路保護装置。
- ヒューズ素子は、(i)ワイヤ、(ii)表面装着された、(iii)単一金属の、及び(iv)多数金属のもの、から成る群から選択されたタイプの少なくとも1つのものである請求項1に記載の回路保護装置。
- 第1及び第2の端子は、(i)第1及び第2の終端端子、(ii)電気的な絶縁基板の第1及び第2の側上に延びる、そして(iii)異なった金属から作られる、から成る群から選択された少なくとも1つの属性を含む請求項1に記載の回路保護装置。
- ヒューズ素子及びPTCサーミスタ層は、絶縁基板の対向する側上に位置する請求項1に記載の回路保護装置。
- 基板は、FR−4、ポリイミド及びガラスから成る群から選択される材料から作られる請求項1に記載の回路保護装置。
- PTCサーミスタ層は、高分子の及びセラミックのものから成る群から選択されるタイプのものである請求項1に記載の回路保護装置。
- 複数の絶縁基板及び複数のPTCサーミスタ層を含む請求項1に記載の回路保護装置。
- 第1及び第2の導体は、各々、PTCサーミスタ層の各々に電気的に接続される請求項8に記載の回路保護装置。
- 第1の電気的な絶縁基板と、
該第1の絶縁基板の第1の側上に位置するヒューズ素子と、
第1の基板の第2の側と接触する第1の側を有する第1の正の温度係数(“PTC”)サーミスタ層と、
第1のPTCサーミスタ層の第2の側と接触する第1の側を有する第2の電気的な絶縁基板と、
該第2の絶縁基板の第2の側と接触する第2のPTCサーミスタ層と、
ヒューズ素子と第1及び第2のサーミスタ層とに電気的に並列に接続された第1及び第2の導体と、
を備えた回路保護装置。 - ヒューズ素子は、(i)表面装着素子である、(ii)異種金属を有する、(iii)ワイヤ接合タイプのものである、及び(iv)第1及び第2のPTCサーミスタ層の集合的定格のものに少なくとも類似した定格を有する、ものから成る群から選択される少なくとも1つの属性を有する請求項10に記載の回路保護装置。
- 第3の電気的な絶縁基板を含み、第2のPTCサーミスタ層は、第2の絶縁基板の第2の側と接触する第1の側と、第3の電気的な絶縁基板と接触する第2の側とを有する請求項10に記載の回路保護装置。
- 第1及び第2の導体は、各々、ヒューズ素子と第1及び第2のPTCサーミスタ層とに接触する少なくとも1つの電極を含む請求項10に記載の回路保護装置。
- 第1及び第2の導体の各々は、第1及び第2のPTCサーミスタ層の1つを横切って少なくとも中途まで延びる電極を有する請求項10に記載の回路保護装置。
- 第1及び第2の導体は、各々、電極と接触する少なくとも1つの端キャップ金属被膜を含む請求項14に記載の回路保護装置。
- セラミックの正の温度係数(“CPTC”)サーミスタ層と、
CPTCサーミスタ層によって担持されるヒューズ素子であって、CPTCサーミスタ層よりも低い抵抗を有する前記ヒューズ素子と、
電流が、(i)最初に正常動作下ではヒューズ素子及びCPTCサーミスタ層を通って流れ、そして(ii)ヒューズ素子の開放後には正常動作下でCPTCサーミスタ層を通して流れるように、ヒューズ素子とCPTCサーミスタ層とに並列に電気的に接続される第1及び第2の導体と、
を備えた回路保護装置。 - ヒューズ素子は、CPTCサーミスタ層に塗布される表面装着ヒューズ素子である請求項16に記載の回路保護装置。
- ヒューズ素子は、CPTCサーミスタ層に塗布される電極に付着されたワイヤ素子である請求項16に記載の回路保護装置。
- 比較的低い電気抵抗を有するリセット可能でない溶融機器でもって装置内における第1の電気経路を保護し、そして
電流が、(i)最初に正常動作下ではリセット可能な正の温度係数(“PTC”)サーミスタ層及びリセット可能でない溶融機器を通して低い電圧降下で流れ、そして(ii)リセット可能でない溶融機器の開放後には正常動作下でリセット可能なPTCサーミスタ層を通して高い電圧降下で流れるように、比較的高い電気抵抗を有するリセット可能なPTCサーミスタ層でもって第1の電気経路と並列の装置内の第2の電気経路を保護する、
ようにした回路保護方法。 - リセット可能なPTCサーミスタ層は、複数の正の温度係数層を含む請求項19に記載の回路保護方法。
- 遠隔通信回線のティップまたはリング・ラインにおける動作のための装置を構成するようにした請求項19に記載の回路保護方法。
- データ・バス・コントローラ及びデータ・バス・コネクタ間の電圧供給ラインにおける動作のための装置を構成するようにした請求項19に記載の回路保護方法。
- バッテリ・パックの充電ラインにおける動作のための装置を構成するようにした請求項19に記載の回路保護方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/828,844 US20090027821A1 (en) | 2007-07-26 | 2007-07-26 | Integrated thermistor and metallic element device and method |
US11/828,844 | 2007-07-26 |
Publications (2)
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JP2009032696A JP2009032696A (ja) | 2009-02-12 |
JP5259289B2 true JP5259289B2 (ja) | 2013-08-07 |
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JP2008192714A Active JP5259289B2 (ja) | 2007-07-26 | 2008-07-25 | 一体化されたサーミスタ及び金属素子装置並びに方法 |
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US (2) | US20090027821A1 (ja) |
JP (1) | JP5259289B2 (ja) |
CN (1) | CN101354937B (ja) |
DE (1) | DE102008034508A1 (ja) |
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-
2007
- 2007-07-26 US US11/828,844 patent/US20090027821A1/en not_active Abandoned
-
2008
- 2008-07-24 DE DE102008034508A patent/DE102008034508A1/de active Pending
- 2008-07-25 JP JP2008192714A patent/JP5259289B2/ja active Active
- 2008-07-25 CN CN2008101611115A patent/CN101354937B/zh active Active
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2013
- 2013-01-15 US US13/741,974 patent/US9190833B2/en active Active
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US20090027821A1 (en) | 2009-01-29 |
JP2009032696A (ja) | 2009-02-12 |
CN101354937A (zh) | 2009-01-28 |
DE102008034508A1 (de) | 2009-02-19 |
CN101354937B (zh) | 2013-05-01 |
US20130128406A1 (en) | 2013-05-23 |
US9190833B2 (en) | 2015-11-17 |
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