JP5241098B2 - 画像形成方法 - Google Patents
画像形成方法 Download PDFInfo
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- JP5241098B2 JP5241098B2 JP2006354524A JP2006354524A JP5241098B2 JP 5241098 B2 JP5241098 B2 JP 5241098B2 JP 2006354524 A JP2006354524 A JP 2006354524A JP 2006354524 A JP2006354524 A JP 2006354524A JP 5241098 B2 JP5241098 B2 JP 5241098B2
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- resin
- acid
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- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
- NZIDBRBFGPQCRY-UHFFFAOYSA-N octyl 2-methylprop-2-enoate Chemical compound CCCCCCCCOC(=O)C(C)=C NZIDBRBFGPQCRY-UHFFFAOYSA-N 0.000 description 1
- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000004209 oxidized polyethylene wax Substances 0.000 description 1
- 235000013873 oxidized polyethylene wax Nutrition 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- HDBWAWNLGGMZRQ-UHFFFAOYSA-N p-Vinylbiphenyl Chemical compound C1=CC(C=C)=CC=C1C1=CC=CC=C1 HDBWAWNLGGMZRQ-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical class C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- WEAYWASEBDOLRG-UHFFFAOYSA-N pentane-1,2,5-triol Chemical compound OCCCC(O)CO WEAYWASEBDOLRG-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 1
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920006350 polyacrylonitrile resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 150000004291 polyenes Chemical class 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 description 1
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- YPVDWEHVCUBACK-UHFFFAOYSA-N propoxycarbonyloxy propyl carbonate Chemical compound CCCOC(=O)OOC(=O)OCCC YPVDWEHVCUBACK-UHFFFAOYSA-N 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- LLBIOIRWAYBCKK-UHFFFAOYSA-N pyranthrene-8,16-dione Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3C=C4C5=CC=CC=C5C(=O)C5=C4C4=C3C2=C1C=C4C=C5 LLBIOIRWAYBCKK-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 150000004671 saturated fatty acids Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- ZHFPEICFUVWJIS-UHFFFAOYSA-M sodium 2-hydroxy-5-[(3-nitrophenyl)diazenyl]benzoate Chemical compound [Na+].Oc1ccc(cc1C([O-])=O)N=Nc1cccc(c1)[N+]([O-])=O ZHFPEICFUVWJIS-UHFFFAOYSA-M 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229920006027 ternary co-polymer Polymers 0.000 description 1
- JIYXDFNAPHIAFH-UHFFFAOYSA-N tert-butyl 3-tert-butylperoxycarbonylbenzoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC(C(=O)OC(C)(C)C)=C1 JIYXDFNAPHIAFH-UHFFFAOYSA-N 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- CAPIMQICDAJXSB-UHFFFAOYSA-N trichloro(1-chloroethyl)silane Chemical compound CC(Cl)[Si](Cl)(Cl)Cl CAPIMQICDAJXSB-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- KHOQXNHADJBILQ-UHFFFAOYSA-N trimethyl(sulfanyl)silane Chemical compound C[Si](C)(C)S KHOQXNHADJBILQ-UHFFFAOYSA-N 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- 229940096522 trimethylolpropane triacrylate Drugs 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- ZRQNRTRXAVFCMB-UHFFFAOYSA-N tris(2,4,5-trioxa-1-stanna-3-borabicyclo[1.1.1]pentan-1-yl) borate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] ZRQNRTRXAVFCMB-UHFFFAOYSA-N 0.000 description 1
- GRPURDFRFHUDSP-UHFFFAOYSA-N tris(prop-2-enyl) benzene-1,2,4-tricarboxylate Chemical group C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C(C(=O)OCC=C)=C1 GRPURDFRFHUDSP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- FUSUHKVFWTUUBE-UHFFFAOYSA-N vinyl methyl ketone Natural products CC(=O)C=C FUSUHKVFWTUUBE-UHFFFAOYSA-N 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 235000019386 wax ester Nutrition 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Landscapes
- Electrostatic Charge, Transfer And Separation In Electrography (AREA)
- Developing Agents For Electrophotography (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
1)導電性支持体上に感光層を有する感光体を接触帯電部材により帯電し、帯電された感光体に静電潜像を形成し、静電潜像にトナーを転移させて感光体上に形成したトナー像を転写材に転写させる画像形成方法において、
該トナーは、少なくともトナー粒子及び無機微粉体を有し、
該無機微粉体は、チタン酸ストロンチウムを主成分とするものであり、個数平均粒子径d(nm)が65nm以上200nm以下であり、CuKα特性X線回折におけるブラッグ角(2θ±0.20deg)の32.20degにピークを有し、且つ該ブラッグ角(2θ±0.20deg)=32.20degにおけるX線回折ピークの半値幅が0.20〜0.30degであり、
該無機微粉体は、該トナー粒子100質量部当たり0.05〜3.0質量部含有されており、
該感光体表面は、表面粗さRz−dが0.3μm〜2.5μmであり、表面凹凸平均間隔Sm−dが1〜100μmであり、
該接触帯電部材は球状粒子を含有し、該部材の表面粗さRz−cが1〜20μmであり、表面凹凸平均間隔Sm−cが10〜500μmであることを特徴とする。
2)該感光体表面形状が、周方向に連続的に形成された溝と平坦部の組合せからなり、1)に記載されたことを特徴とする。
3)導電性支持体上に感光層を有する感光体を接触帯電部材により帯電し、帯電された感光体に静電潜像を形成し、静電潜像にトナーを転移させて感光体上に形成したトナー像を転写材に転写させる画像形成方法において、
該トナーは、少なくともトナー粒子及び無機微粉体を有し、
該無機微粉体は、チタン酸ストロンチウムであり、個数平均粒子径d(nm)が65nm以上200nm以下であり、CuKα特性X線回折におけるブラッグ角(2θ±0.20deg)の32.20degにピークを有し、且つ該ブラッグ角(2θ±0.20deg)=32.20degにおけるX線回折ピークの半値幅が0.22〜0.29degであり、
該無機微粉体は、該トナー粒子100質量部当たり0.05〜3.0質量部含有されており、
該感光体表面は、表面粗さRz−dが0.55〜2.22μmであり、表面凹凸平均間隔Sm−dが1.2〜8.5μmであり、
該接触帯電部材は球状粒子を含有し、該部材の表面粗さRz−cが1.2〜15.7μmであり、表面凹凸平均間隔Sm−cが15〜450μmであることを特徴とする。
0.010<(Ib)/(Ia)<0.150
0.010<(Ic)/(Ia)<0.150
1)500mlのビーカーに3gの現像剤を入れ、該現像剤3gに対して200mlのTHF(テトラヒドロキシフラン)を加える。
2)1)で得られた溶液に超音波を3分間照射し、現像剤を分散させ、外添剤を遊離させる。
3)2)で得られた、遊離した外添剤を含むTHF上澄み溶液をデカンテーションにより分離し、サンプル溶液とする。
4)3)の操作で残ったトナー粒子に再びTHFを200ml加え、2)、3)の操作を繰り返す(3回程度)。
5)1)〜4)の操作を、必要量のサンプル溶液が得られるまで繰り返す。
6)得られたサンプル溶液(遊離した外添剤を含むTHF上澄み溶液)を2μmのメンブレンフィルターを用いて、真空ろ過し、固形分を回収して外添剤サンプルを得る。
管球:Cu
平行ビーム光学系
電圧:50kV
電流:300mA
開始角度:30°
終了角度:50°
サンプリング幅:0.02°
スキャンスピード:4.00°/min
発散スリット:開放
発散縦スリット:10mm
散乱スリット:開放
受光スリット:1.0mm
SiCl4+2H2+O2→SiO2+4HCl
(i)弾性層表面の粗さ制御(研磨等)により、表面性を調整する。
(ii)表面層形成後、研磨等により表面性を調整する。
(iii)表面層の形成条件で表面性を制御する。(例えば、塗料コートの場合、乾燥温度、時間等)
(iv)表面層に表面性調整剤としての球状粒子を添加する。
表面粗さRz−cが1μm未満或いは表面凹凸平均間隔Sm−cが10μ未満である場合、やはり感光体とのニップ部での接触面積が大きくなり、感光体への現像剤の融着や、帯電部材の現像剤汚れ等を引き起こしやすい。また、本発明の無機微粉体を保持することができず、帯電不良を引き起こしやすい。
5.0≦(Rz−c・Sm−c−Rz−d・Sm−d)/d2≦300.0
SF−1={(MXLNG)2/AREA}×(100π/4)
で定義されるものである。
・必要に応じて、分散性を向上させる目的で粒子の表面処理(シラン系またはチタネート系カップリング剤処理等)を行う
・結着材料と混合性の良い粒子を選択する
・耐溶剤性を考慮して使用溶剤に対し溶解しない、またはしにくい粒子を選択する
・熱硬化型塗料の場合、なるべくTgが高く熱変形しにくい粒子を選択する
弾性層の作製:
エピクロルヒドリンゴム(三元共重合体) 100質量部
軽質炭酸カルシウム 30質量部
可塑剤(分子量4000) 10質量部
ステアリン酸亜鉛 1質量部
老化防止剤 MB 0.5質量部
酸化亜鉛 5質量部
四級アンモニウム塩 3質量部
以上の材料を45℃に調節した密閉型ミキサーにて10分間混練して、原料コンパウンドを調製する。このコンパウンドに原料ゴムのエピクロルヒドリンゴム100質量部に対し加硫剤としての硫黄1質量部、加硫促進剤としてのDM1質量部、TS0.5質量部を加え、20℃に冷却した2本ロール機にて10分間混練する。得られたコンパウンドを、φ6ステンレス製芯金の周囲に外径φ18のローラ状になるように押出し成型機にて作製し、加熱蒸気加硫した後、外径がφ16になるように精密研磨加工を行い弾性ローラを得た。
ラクトン変性アクリルポリオール(OH価 90KOHmg/g)100質量部、メチルイソブチルケトン220質量部、導電性酸化錫(シランカップリング剤表面処理、粉体抵抗100Ωcm、平均粒径0.02μm)90質量部、架橋ポリメタクリル酸メチル微粒子(平均粒径5μm、SF−1 110)7質量部、変性ジメチルシリコーンオイル0.08質量部の割合で配合した混合液をビーズミルにて分散させた後、ヘキサメチレンジイソシアネート(HDI)とイソホロンジイソシアネート(IPDI)の各ブタノンオキシムブロック体の1:1混合物をNCO/OH=1.0となるように添加し、溶解して表面層用塗料を調製した。
上記表面層用塗料を前記弾性ローラの上に、まず浸漬塗布し、10分間風乾した後、上下を逆さにして、浸漬塗布し、30分風乾した後、150℃−1時間乾燥することにより、厚さ20μmの表面層を有する帯電部材1を得た。
得られた帯電部材1の物性を表1に示す。
表面層用塗料の調製工程において架橋ポリメタクリル酸メチル微粒子(平均粒径20μm、SF−1 120)を7.0質量部とした以外は実施例1と同様にして帯電部材2を得た。
表面層用塗料の調製工程において架橋ポリメタクリル酸メチル微粒子(平均粒径1.2μm、SF−1 110)を7質量部、メチルイソブチルケトン130質量部とした以外は実施例1と同様にし、厚さ100μmの表面層を有する帯電部材3を得た。
表面層用塗料の調製工程において、架橋ポリメタクリル酸メチル微粒子(平均粒径35μm、SF−1 110)を7質量部、メチルイソブチルケトン260質量部とした以外は実施例1と同様にし、厚さ10μmの表面層を有する帯電部材4を得た。
表面層用塗料の調製工程において架橋ポリメタクリル酸メチル微粒子(平均粒径5μm、SF−1 110)を無添加(0質量部)とした以外は実施例1と同様にし、厚さ20μmの表面層を形成した後、表面を研磨処理し、帯電部材を得た。
直径30mm×357.5mmのアルミニウムシリンダーを導電性支持体とし、それに、以下の材料より構成される塗布液を導電性支持体上に浸漬コーティング法で塗布し、140℃で30分熱硬化して、膜厚が17μmの導電層を形成した。
・導電性顔料:SnO2コート処理硫酸バリウム 10質量部
・抵抗調節用顔料:酸化チタン 2.5質量部
・結着樹脂:フェノール樹脂 6質量部
・レベリング材:シリコーンオイル 0.001質量部
・溶剤:メタノール/メトキシプロパノール=0.2/0.8 13質量部
次に、この導電層上にN−メトキシメチル化ナイロン3質量部及び共重合ナイロン2.2質量部をメタノール66質量部及びn−ブタノール34質量部の混合溶媒に溶解した溶液を塗布液として用い浸漬コーティング法で塗布して、膜厚が0.6μmの中間層を形成した。
感光体の製造例1において、研磨シート送りスピード:200mm/sec、粗面化工程の時間を170secとした以外は同様に電子写真感光体2を作製した。得られた電子写真感光体2の物性値を表2−1に示す。
感光体の製造例1において、粗面化工程を図1に示す乾式ブラスト装置(不二精機製造所製)を用いて、下記条件にてブラスト処理を行った。
研磨材砥粒:球状ガラスビーズ平均粒径が30μm(商品名:UB−01L 株式会社ユニオン製)を使用した。エア吹き付け圧力:3.5kgf/cm2、ブラストガン移動速度:430mm/s、ワーク(感光体)回転速度:288rpm、ブラストガン吐出口と感光体の距離:100mm、砥粒吐出角度:90°、砥粒供給量:200g/min、ブラスト回数:片道×2回
次に、感光体の製造例3の粗面化処理において、エア吹き付け圧力条件を3.5kgf/cm2から、2.0kgf/cm2に変更した以外は感光体の製造例3と同様に粗面化処理を行った。
感光体の製造例1において、表面層用塗布液中に添加するポリテトラフルオロエチレン微粒子量を60質量部にする以外は同様にして塗布液を作製し電荷輸送層を形成した。
感光体の製造例1と同様にして導電層、中間層、電荷発生層を形成した。次いで、3,3,3,−トリフルオロプロピルトリメトキシシラン(商品名:LS1090、信越化学(株)製)で表面処理した(処理量7%)アンチモンドープ酸化錫微粒子50質量部及び下記一般式(7)で表された正孔輸送性を有さないアクリルモノマー30質量部をエタノール150質量部中でサンドミルにより70時間かけて分散し、表面層用塗布液を調整した。
感光体の製造例5において粗面化工程の時間を30minとした以外は同様に電子写真感光体7を作製した。得られた電子写真感光体7の物性値を表2−1に示す。
硫酸チタニル粉末を蒸留水に溶解し、溶液中のTi濃度が1.5(mol/l)、反応終了時の酸濃度が2.0(mol/l)になるように、硫酸及び蒸留水を添加した溶液を調整し、この溶液を、密閉した容器により、110℃の加熱処理を36時間行い、加水分解反応を行なった。その後、水洗浄を行い十分に硫酸、不純物を除去し、メタチタン酸スラリーを得た。このスラリーに、酸化チタンに対して等モル量になるように炭酸ストロンチウム(平均粒子径85nm)を添加する。水系湿式中で十分に混合した後、洗浄、乾燥後、820℃にて3時間焼結し、機械粉砕、分級工程を経て個数平均粒子径110nmの複合無機微粉体1を得た。得られた無機微粉体1の物性を表3に示す。
上記メタチタン酸スラリーを用い、炭酸ストロンチウムの粒子径、及び焼成条件を表1に示すように変更し、粉砕、分級条件を適宜調整し、無機微粉体の製造例1と同様にして、無機微粉体2〜6を得た。得られた無機微粉体の物性を表3に示す。
硫酸チタニル水溶液を加水分解して得られた含水酸化チタンスラリーをアルカリ水溶液で洗浄した。次に、該含水酸化チタンのスラリーに塩酸を添加して、pHを0.7に調整してチタニアゾル分散液を得た。該チタニアゾル分散液にNaOHを添加し、分散液のpHを5.0に調整し、上澄み液の電気伝導度が65μS/cmになるまで洗浄をくり返しした。
(ハイブリッド樹脂)
(1)ポリエステル樹脂の製造
・テレフタル酸 :6.1mol
・無水ドデセニルコハク酸 :3.6mol
・無水トリメリット酸 :3.4mol
・PO−BPA :7.3mol
・EO−BPA :3.0mol
上記ポリエステルモノマーをエステル化触媒とともにオートクレーブに仕込み、減圧装置、水分離装置、窒素ガス導入装置、温度測定装置及び撹拌装置を付し、窒素ガス雰囲気下で210℃まで加熱しながら縮重合反応を行い、ポリエステル樹脂を得た。
上記ポリエステル樹脂80質量部をキシレン100質量部に溶解・膨潤した。次に、スチレン15質量部、アクリル酸2−エチルヘキシル4質量部、エステル化触媒としてジブチルスズオキサイド0.13質量部を添加してキシレンの還流温度まで加熱してポリエステル樹脂のカルボン酸とアクリル酸2−エチルヘキシルとのエステル交換反応を開始した。更にラジカル重合開始剤としてt−ブチルハイドロパーオキサイド1質量部をキシレン30質量部に溶解したキシレン溶液を約1時間かけて滴下した。その温度で6時間保持してラジカル重合反応を終了した。減圧下200℃まで加熱して脱溶剤することによりポリエステル樹脂の水酸基とビニル系重合体ユニットの共重合モノマーであるアクリル酸2−エチルヘキシルとのエステル交換反応を行い、これにより、ポリエステル樹脂、ビニル系重合体及びポリエステルユニットとビニル系重合体ユニットがエステル結合して生成したハイブリッド樹脂1を得た。
(ポリエステル樹脂)
・テレフタル酸 12mol%
・フマル酸 25mol%
・無水トリメリット酸 5mol%
・PO−BPO 35mol%
・EO−BPA 23mol%
上記ポリエステルモノマーをエステル化触媒とともにオートクレーブに仕込み、減圧装置、水分離装置、窒素ガス導入装置、温度測定装置及び撹拌装置を付し、窒素ガス雰囲気下で210℃まで加熱しながら縮重合反応を行い、第1のポリエステル樹脂Aを得た。
・フマル酸 32mol%
・無水トリメリット酸 10mol%
・PO−BPO 34mol%
・EO−BPA 20mol%
これらを同様に縮合重合反応を行い、重合途中で無水トリメリット酸3mol%をさらに追加し、第2のポリエステル樹脂Bを得た。
(スチレン−アクリル樹脂)
・スチレン 70質量部
・アクリル酸n−ブチル 20質量部
・マレイン酸モノブチル 5質量部
・ジ−t−ブチルパーオキサイド 1質量部
4つ口フラスコにキシレン200重量部を入れ、攪拌しながら容器内を十分に窒素で置換し、130℃に昇温させた後、上記各成分を3.5時間かけて滴下した。更にキシレン還流下で重合を完了し、減圧下で溶媒を蒸留除去し、スチレン−アクリル樹脂3を得た。
上記ハイブリット樹脂1 100質量部
低分子量エチレン−プロピレン共重合体 8質量部
・荷電制御剤(アゾ系鉄錯体化合物) 1.5質量部
・磁性酸化鉄 85質量部
(平均粒径0.18μm、保磁力11.4KA/m、残留磁化10.6Am2/kg、飽和磁化82.3Am2/kg)
上記混合物を、130℃に加熱された二軸混練機で溶融混練して、冷却した混合物をカッターミルで粗粉砕した後、ジェット気流を用いた微粉砕機を用いて微粉砕し、得られた微粉砕物を風力分級機で分級し、重量平均径7.9μm、10.1μm以上の粒子が6.6%であるトナー粒子を得た。
表4に示すように、上記複合無機微粉体2〜6、樹脂成分を変更する以外は現像剤の製造例1と同様にして、現像剤2〜8を得た。
市販の複写機IR−4570(キヤノン(株)社製)を、プリントスピード45cpm→65cpmになるように改造を加え、現像剤に製造例1の現像剤(1)、電子写真感光体に同様に製造例1の電子写真感光体1及び帯電部材1を用い、低温低湿環境下(10℃/5%RH)において、印字比率6%のテストチャートを用いて、300,000枚複写を行った。またこの時、帯電設定は、直流成分を−700Vとし、交流成分としては、周波数1800Hzで、2000μAの定電流制御とした。以下に示すとおりに画像濃度、カブリ、感光体及び帯電部材への現像剤の付着性、帯電均一性の評価を行った。
1)画像濃度
「マクベス反射濃度計」(マクベス社製)で、SPIフィルターを使用して、直径5mm丸の画像の反射濃度を5点測定し、その平均値により評価を行った。
ランク5:反射濃度 1.50以上
ランク4:反射濃度 1.45〜1.49
ランク3:反射濃度 1.40〜1.44
ランク2:反射濃度 1.35〜1.39
ランク1:反射濃度 1.34未満
「反射濃度計」(リフレクトメーター モデルTC−6DS 東京電色社製)を用いて、画像形成前の転写紙の反射濃度(Dr)と、ベタ白画像をコピーした後の反射濃度の最悪値を(Ds)とを測定し、その差分(Ds−Dr)をカブリ値として評価した。
ランク5:カブリ0.5未満
ランク4:カブリ0.6〜1.0
ランク3:カブリ1.1〜1.5
ランク2:カブリ1.6〜2.5
ランク1:カブリ2.6以上
低温低湿環境下(10℃/5%RH)での、300,000枚複写試験時のベタ黒及びハーフトーンのサンプル画像と、終了後の電子写真感光体の表面を目視観察し評価を行った。
ランク4:感光体表面に現像剤融着物の発生がない
ランク3:感光体表面にわずかに現像剤融着物がみられるが画像では確認できない
ランク2:感光体表面に現像剤融着物の発生はみられ、ハーフトン画像で確認できが、ベタ黒画像では確認できない。
ランク1:感光体表面に無数の現像剤融着物の発生がみられ、ベタ黒画像で確認できる。
低温低湿環境下(10℃/5%RH)での、300,000枚複写試験時のベタ黒及びハーフトーンのサンプル画像と、150,000枚時、300,000枚複写試験後の帯電部材の汚れ状況を目視観察し評価を行った。
ランク4:帯電部材の汚れは目視では確認できない
ランク3:帯電部材の一部の汚れは確認できるが、画像上では確認できない
ランク2:帯電部材の全面に汚れが確認できるが、画像上では確認できない
ランク1:画像上に帯電部材汚れ起因の帯電不良が確認できる
低温低湿環境下(10℃/5%RH)での、300,000枚複写試験後において、帯電部材への電流量を減少させ、砂地の発生する電流量を測定した。
ランク5:総電流量1800μA未満
ランク4:総電流量1800以上1860μA未満
ランク3:総電流量1860μA以上1920μA未満
ランク2:総電流量1920μA以上1980μA未満
ランク1:総電流量1980μA以上
表4に示すとおりに、上記現像剤2〜8、電子写真感光体2〜7及び帯電部材2〜5を用いて、実施例1と同様に評価を行った。評価結果を表4に示す。
2−1〜2−4 ガイドローラ
3 バックアップローラ
4 電子写真感光体
5 巻き取り手段
9 吐出装置
10 電子写真感光体
Claims (3)
- 導電性支持体上に感光層を有する感光体を接触帯電部材により帯電し、帯電された感光体に静電潜像を形成し、静電潜像にトナーを転移させて感光体上に形成したトナー像を転写材に転写させる画像形成方法において、
該トナーは、少なくともトナー粒子及び無機微粉体を有し、
該無機微粉体は、チタン酸ストロンチウムを主成分とするものであり、個数平均粒子径d(nm)が65nm以上200nm以下であり、CuKα特性X線回折におけるブラッグ角(2θ±0.20deg)の32.20degにピークを有し、且つ該ブラッグ角(2θ±0.20deg)=32.20degにおけるX線回折ピークの半値幅が0.20〜0.30degであり、
該無機微粉体は、該トナー粒子100質量部当たり0.05〜3.0質量部含有されており、
該感光体表面は、表面粗さRz−dが0.3μm〜2.5μmであり、表面凹凸平均間隔Sm−dが1〜100μmであり、
該接触帯電部材は球状粒子を含有し、該部材の表面粗さRz−cが1〜20μmであり、表面凹凸平均間隔Sm−cが10〜500μmであることを特徴とする画像形成方法。 - 該感光体表面形状が、周方向に連続的に形成された溝と平坦部の組合せからなることを特徴とする請求項1に記載の画像形成方法。
- 導電性支持体上に感光層を有する感光体を接触帯電部材により帯電し、帯電された感光体に静電潜像を形成し、静電潜像にトナーを転移させて感光体上に形成したトナー像を転写材に転写させる画像形成方法において、
該トナーは、少なくともトナー粒子及び無機微粉体を有し、
該無機微粉体は、チタン酸ストロンチウムであり、個数平均粒子径d(nm)が65nm以上200nm以下であり、CuKα特性X線回折におけるブラッグ角(2θ±0.20deg)の32.20degにピークを有し、且つ該ブラッグ角(2θ±0.20deg)=32.20degにおけるX線回折ピークの半値幅が0.22〜0.29degであり、
該無機微粉体は、該トナー粒子100質量部当たり0.05〜3.0質量部含有されており、
該感光体表面は、表面粗さRz−dが0.55〜2.22μmであり、表面凹凸平均間隔Sm−dが1.2〜8.5μmであり、
該接触帯電部材は球状粒子を含有し、該部材の表面粗さRz−cが1.2〜15.7μmであり、表面凹凸平均間隔Sm−cが15〜450μmであることを特徴とする画像形成方法。
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JP6354863B2 (ja) * | 2015-01-30 | 2018-07-11 | 京セラドキュメントソリューションズ株式会社 | 電子写真感光体及びそれを備えた画像形成装置 |
JP6526286B2 (ja) * | 2017-04-27 | 2019-06-05 | キヤノン株式会社 | 電子写真感光体、プロセスカートリッジおよび電子写真装置 |
US10241429B2 (en) * | 2017-04-27 | 2019-03-26 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus |
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JP7154880B2 (ja) * | 2018-08-23 | 2022-10-18 | キヤノン株式会社 | 画像形成方法 |
JP7302320B2 (ja) * | 2019-06-14 | 2023-07-04 | 京セラドキュメントソリューションズ株式会社 | 画像形成装置及び画像形成方法 |
JP2021021752A (ja) * | 2019-07-24 | 2021-02-18 | 京セラドキュメントソリューションズ株式会社 | 画像形成装置及び画像形成方法 |
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JP4498200B2 (ja) * | 2005-04-18 | 2010-07-07 | キヤノン株式会社 | 画像形成装置 |
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CN113195910A (zh) * | 2019-02-27 | 2021-07-30 | Nok株式会社 | 带电辊 |
US11480886B2 (en) * | 2019-02-27 | 2022-10-25 | Nok Corporation | Charging roll |
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