JP5236478B2 - 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム - Google Patents

光源の変動を測定するためのシステムを備えたｅｕｖ照明システム Download PDF

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Publication number
JP5236478B2
JP5236478B2 JP2008539331A JP2008539331A JP5236478B2 JP 5236478 B2 JP5236478 B2 JP 5236478B2 JP 2008539331 A JP2008539331 A JP 2008539331A JP 2008539331 A JP2008539331 A JP 2008539331A JP 5236478 B2 JP5236478 B2 JP 5236478B2
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Japan
Prior art keywords
euv
aperture stop
light source
sensor device
illumination system
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Expired - Fee Related
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JP2008539331A
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English (en)
Japanese (ja)
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JP2009525590A (ja
JP2009525590A5 (https=
Inventor
アクセル ショルツ
マルクス ヴァイス
マンフレッド マウル
フィリップ ボッセルマン
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Lenses (AREA)
JP2008539331A 2005-11-10 2006-11-09 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム Expired - Fee Related JP5236478B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73593205P 2005-11-10 2005-11-10
US60/735,932 2005-11-10
PCT/EP2006/010725 WO2007054291A1 (en) 2005-11-10 2006-11-09 Euv illumination system with a system for measuring fluctuations of the light source

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011283031A Division JP5236065B2 (ja) 2005-11-10 2011-12-26 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム
JP2012245711A Division JP5337292B2 (ja) 2005-11-10 2012-11-07 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム

Publications (3)

Publication Number Publication Date
JP2009525590A JP2009525590A (ja) 2009-07-09
JP2009525590A5 JP2009525590A5 (https=) 2009-12-24
JP5236478B2 true JP5236478B2 (ja) 2013-07-17

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JP2008539331A Expired - Fee Related JP5236478B2 (ja) 2005-11-10 2006-11-09 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム
JP2011283031A Expired - Fee Related JP5236065B2 (ja) 2005-11-10 2011-12-26 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム
JP2012245711A Expired - Fee Related JP5337292B2 (ja) 2005-11-10 2012-11-07 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム

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JP2011283031A Expired - Fee Related JP5236065B2 (ja) 2005-11-10 2011-12-26 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム
JP2012245711A Expired - Fee Related JP5337292B2 (ja) 2005-11-10 2012-11-07 光源の変動を測定するためのシステムを備えたｅｕｖ照明システム

Country Status (4)

Country Link
US (2) US7875865B2 (https=)
JP (3) JP5236478B2 (https=)
KR (1) KR101370203B1 (https=)
WO (1) WO2007054291A1 (https=)

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DE102013204444A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Maskeninspektionssystem sowie Maskeninspektionssystem mit einer derartigen Beleuchtungsoptik
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KR102736650B1 (ko) * 2021-10-15 2024-12-02 주식회사 이솔 Euv 마스크 및 euv 팰리클의 반사도와 투과도 측정장치
KR102693199B1 (ko) 2021-10-15 2024-08-08 주식회사 이솔 다층막 반사형 존플레이트를 이용한 euv 마스크 검사장치
DE102021213327B3 (de) * 2021-11-26 2023-03-16 Carl Zeiss Smt Gmbh Metrologiesystem zur Untersuchung von Objekten mit EUV-Messlicht
KR102788301B1 (ko) 2022-07-07 2025-03-31 주식회사 이솔 프리폼 조명계가 구현된 고성능 euv 현미경 장치
KR102830685B1 (ko) 2022-08-05 2025-07-07 주식회사 이솔 타원 미러가 적용된 프리폼 조명계 구조의 고성능 euv 현미경 장치
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Also Published As

Publication number Publication date
KR101370203B1 (ko) 2014-03-05
JP2012060190A (ja) 2012-03-22
JP2013048289A (ja) 2013-03-07
US7875865B2 (en) 2011-01-25
JP2009525590A (ja) 2009-07-09
US20080258070A1 (en) 2008-10-23
WO2007054291A1 (en) 2007-05-18
JP5236065B2 (ja) 2013-07-17
KR20080066791A (ko) 2008-07-16
JP5337292B2 (ja) 2013-11-06
US8513628B2 (en) 2013-08-20
US20110079737A1 (en) 2011-04-07

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