KR101370203B1 - 광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템 - Google Patents

광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템 Download PDF

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Publication number
KR101370203B1
KR101370203B1 KR1020087011241A KR20087011241A KR101370203B1 KR 101370203 B1 KR101370203 B1 KR 101370203B1 KR 1020087011241 A KR1020087011241 A KR 1020087011241A KR 20087011241 A KR20087011241 A KR 20087011241A KR 101370203 B1 KR101370203 B1 KR 101370203B1
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South Korea
Prior art keywords
euv
aperture
light source
illumination system
sensor device
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Expired - Fee Related
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KR1020087011241A
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English (en)
Korean (ko)
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KR20080066791A (ko
Inventor
악셀 숄츠
마르쿠스 바이쓰
만프레드 마울
필립 보셀만
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칼 짜이스 에스엠테 게엠베하
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Lenses (AREA)
KR1020087011241A 2005-11-10 2006-11-09 광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템 Expired - Fee Related KR101370203B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73593205P 2005-11-10 2005-11-10
US60/735,932 2005-11-10
PCT/EP2006/010725 WO2007054291A1 (en) 2005-11-10 2006-11-09 Euv illumination system with a system for measuring fluctuations of the light source

Publications (2)

Publication Number Publication Date
KR20080066791A KR20080066791A (ko) 2008-07-16
KR101370203B1 true KR101370203B1 (ko) 2014-03-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087011241A Expired - Fee Related KR101370203B1 (ko) 2005-11-10 2006-11-09 광원의 요동을 측정하기 위한 시스템을 구비한 ｅｕｖ 조명시스템

Country Status (4)

Country Link
US (2) US7875865B2 (https=)
JP (3) JP5236478B2 (https=)
KR (1) KR101370203B1 (https=)
WO (1) WO2007054291A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11561467B1 (en) 2021-10-15 2023-01-24 ESOL Inc. Reflectivity and transmittance measuring device of EUV mask and EUV pellicle
US20230079858A1 (en) 2021-09-10 2023-03-16 ESOL Inc. Euv lighting device using multilayer reflection zone plate and manufacturing method thereof
KR20230054028A (ko) 2021-10-15 2023-04-24 주식회사 이솔 다층막 반사형 존플레이트를 이용한 euv 마스크 검사장치
KR20240007006A (ko) 2022-07-07 2024-01-16 주식회사 이솔 프리폼 조명계가 구현된 고성능 euv 현미경 장치
KR20240019996A (ko) 2022-08-05 2024-02-14 주식회사 이솔 타원 미러가 적용된 프리폼 조명계 구조의 고성능 euv 현미경 장치
KR20240104407A (ko) 2022-12-28 2024-07-05 주식회사 이솔 프리폼 조명계 구조의 고성능 euv 현미경 장치

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JP2010123714A (ja) * 2008-11-19 2010-06-03 Ushio Inc 極端紫外光光源装置
DE102009009062B4 (de) * 2009-02-16 2012-05-31 Carl Zeiss Smt Gmbh Verfahren zum Anordnen eines optischen Moduls in einer Messvorrichtung sowie Messvorrichtung
NL2004322A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
NL2004242A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
US8743199B2 (en) * 2010-03-09 2014-06-03 Physical Optics Corporation Omnidirectional imaging optics with 360°-seamless telescopic resolution
JP5659711B2 (ja) * 2010-11-10 2015-01-28 ウシオ電機株式会社 極端紫外光光源装置における照度分布の検出方法および極端紫外光光源装置
JP2013211517A (ja) * 2012-03-01 2013-10-10 Gigaphoton Inc Ｅｕｖ光集光装置
US20140158894A1 (en) * 2012-12-12 2014-06-12 Kla-Tencor Corporation Method and device using photoelectrons for in-situ beam power and stability monitoring in euv systems
DE102013201193A1 (de) * 2013-01-25 2014-07-31 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen der Phasenlage und/oder der Dicke einer Kontaminationsschicht an einem optischen Element und EUV-Lithographievorrichtung
DE102013204444A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Maskeninspektionssystem sowie Maskeninspektionssystem mit einer derartigen Beleuchtungsoptik
DE102013224435A1 (de) 2013-11-28 2015-05-28 Carl Zeiss Smt Gmbh Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie
KR101528332B1 (ko) * 2014-01-09 2015-06-15 한국과학기술연구원 극자외선 발생 및 분광기 캘리브레이션 장치 및 그 방법
EP3146557A1 (en) 2014-05-20 2017-03-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A radiation sensor device for high energy photons
KR102271772B1 (ko) 2015-03-11 2021-07-01 삼성전자주식회사 Euv 대역외 광량 분포의 측정 방법 및 이를 이용한 euv 노광기의 성능 검사 방법
DE102015212658A1 (de) * 2015-07-07 2017-01-12 Carl Zeiss Smt Gmbh Lithographieanlage und verfahren zum betreiben einer lithographieanlage
JP6278427B1 (ja) * 2017-01-05 2018-02-14 レーザーテック株式会社 光学装置、及び除振方法
NL2021472A (en) 2017-09-20 2019-03-26 Asml Netherlands Bv Radiation Source
DE102017217266A1 (de) * 2017-09-28 2019-03-28 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Eigenschaften einer EUV-Quelle
DE102021213327B3 (de) * 2021-11-26 2023-03-16 Carl Zeiss Smt Gmbh Metrologiesystem zur Untersuchung von Objekten mit EUV-Messlicht
KR20240082039A (ko) * 2022-12-01 2024-06-10 삼성전자주식회사 모니터링 유닛 및 이를 포함하는 기판 처리 장치
CN120731400A (zh) * 2023-03-14 2025-09-30 Asml荷兰有限公司 用于确定euv辐射的性质的方法和系统

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11829064B2 (en) 2021-09-10 2023-11-28 ESOL Inc. EUV lighting device using multilayer reflection zone plate and manufacturing method thereof
US20230079858A1 (en) 2021-09-10 2023-03-16 ESOL Inc. Euv lighting device using multilayer reflection zone plate and manufacturing method thereof
US11898970B2 (en) 2021-10-15 2024-02-13 ESOL Inc. EUV mask inspection device using multilayer reflection zone plate
KR20230054028A (ko) 2021-10-15 2023-04-24 주식회사 이솔 다층막 반사형 존플레이트를 이용한 euv 마스크 검사장치
KR20230054027A (ko) * 2021-10-15 2023-04-24 주식회사 이솔 Euv 마스크 및 euv 팰리클의 반사도와 투과도 측정장치
US11561467B1 (en) 2021-10-15 2023-01-24 ESOL Inc. Reflectivity and transmittance measuring device of EUV mask and EUV pellicle
KR102736650B1 (ko) 2021-10-15 2024-12-02 주식회사 이솔 Euv 마스크 및 euv 팰리클의 반사도와 투과도 측정장치
KR20240007006A (ko) 2022-07-07 2024-01-16 주식회사 이솔 프리폼 조명계가 구현된 고성능 euv 현미경 장치
US12332188B2 (en) 2022-07-07 2025-06-17 ESOL, Inc. High-performance EUV microscope with free form illumination system
KR20240019996A (ko) 2022-08-05 2024-02-14 주식회사 이솔 타원 미러가 적용된 프리폼 조명계 구조의 고성능 euv 현미경 장치
US12287579B2 (en) 2022-08-05 2025-04-29 ESOL Inc. High-performance EUV microscope device with free-form illumination system structure having elliptical mirror
KR20240104407A (ko) 2022-12-28 2024-07-05 주식회사 이솔 프리폼 조명계 구조의 고성능 euv 현미경 장치
US12282144B2 (en) 2022-12-28 2025-04-22 ESOL Inc. High-performance EUV microscope device with free-form illumination system structure

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Publication number Publication date
JP2012060190A (ja) 2012-03-22
JP2013048289A (ja) 2013-03-07
US7875865B2 (en) 2011-01-25
JP2009525590A (ja) 2009-07-09
US20080258070A1 (en) 2008-10-23
WO2007054291A1 (en) 2007-05-18
JP5236065B2 (ja) 2013-07-17
KR20080066791A (ko) 2008-07-16
JP5337292B2 (ja) 2013-11-06
US8513628B2 (en) 2013-08-20
JP5236478B2 (ja) 2013-07-17
US20110079737A1 (en) 2011-04-07

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