JP5230726B2 - ゲイン制御を備える画像センサ画素 - Google Patents

ゲイン制御を備える画像センサ画素 Download PDF

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JP5230726B2
JP5230726B2 JP2010506226A JP2010506226A JP5230726B2 JP 5230726 B2 JP5230726 B2 JP 5230726B2 JP 2010506226 A JP2010506226 A JP 2010506226A JP 2010506226 A JP2010506226 A JP 2010506226A JP 5230726 B2 JP5230726 B2 JP 5230726B2
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charge
voltage conversion
voltage
transfer gate
conversion region
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Japanese (ja)
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JP2010526479A5 (enExample
JP2010526479A (ja
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パークス，クリストファー
トーマス コンプトン，ジョン
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP2010506226A 2007-05-01 2008-04-22 ゲイン制御を備える画像センサ画素 Active JP5230726B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/742,883 2007-05-01
US11/742,883 US8159585B2 (en) 2007-05-01 2007-05-01 Image sensor pixel with gain control
PCT/US2008/005148 WO2008133861A1 (en) 2007-05-01 2008-04-22 Image sensor pixel with gain control

Publications (3)

Publication Number Publication Date
JP2010526479A JP2010526479A (ja) 2010-07-29
JP2010526479A5 JP2010526479A5 (enExample) 2011-06-16
JP5230726B2 true JP5230726B2 (ja) 2013-07-10

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ID=39473856

Family Applications (1)

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JP2010506226A Active JP5230726B2 (ja) 2007-05-01 2008-04-22 ゲイン制御を備える画像センサ画素

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US (2) US8159585B2 (enExample)
EP (2) EP2140676B1 (enExample)
JP (1) JP5230726B2 (enExample)
KR (1) KR101388276B1 (enExample)
CN (1) CN101675657B (enExample)
TW (1) TWI450579B (enExample)
WO (1) WO2008133861A1 (enExample)

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WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
JP4538528B2 (ja) 2008-12-26 2010-09-08 廣津 和子 固体撮像素子
US8411184B2 (en) * 2009-12-22 2013-04-02 Omnivision Technologies, Inc. Column output circuits for image sensors
US9000500B2 (en) 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
FR2995725A1 (fr) * 2012-09-19 2014-03-21 St Microelectronics Sa Procede de commande d'un pixel cmos
CN102843524B (zh) * 2012-09-25 2015-09-23 中国科学院上海高等研究院 Cmos图像传感器及其工作方法
CN111314632B (zh) * 2013-03-14 2023-04-21 株式会社尼康 摄像单元及摄像装置
US9578223B2 (en) 2013-08-21 2017-02-21 Qualcomm Incorporated System and method for capturing images with multiple image sensing elements
US9160958B2 (en) 2013-12-18 2015-10-13 Omnivision Technologies, Inc. Method of reading out an image sensor with transfer gate boost
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
KR102591364B1 (ko) 2015-09-23 2023-10-19 삼성디스플레이 주식회사 광 센서 및 이를 포함하는 표시 장치
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
DE102016212784A1 (de) 2016-07-13 2018-01-18 Robert Bosch Gmbh CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels
JP6420450B2 (ja) * 2017-11-29 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
US11317038B2 (en) 2017-12-19 2022-04-26 SmartSens Technology (HK) Co., Ltd. Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof
JP7299680B2 (ja) 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム
US11114482B2 (en) 2019-11-20 2021-09-07 Gigajot Technology, Inc. Scalable-pixel-size image sensor

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JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6730897B2 (en) 2000-12-29 2004-05-04 Eastman Kodak Company Linearity and dynamic range for complementary metal oxide semiconductor active pixel image sensors
US6960796B2 (en) 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
JP2004336469A (ja) * 2003-05-08 2004-11-25 Fuji Film Microdevices Co Ltd 固体撮像素子、撮像装置、及び画像処理方法
US7075049B2 (en) * 2003-06-11 2006-07-11 Micron Technology, Inc. Dual conversion gain imagers
US7026596B2 (en) * 2003-10-30 2006-04-11 Micron Technology, Inc. High-low sensitivity pixel
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP4380439B2 (ja) * 2004-07-16 2009-12-09 ソニー株式会社 データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器
KR100656666B1 (ko) * 2004-09-08 2006-12-11 매그나칩 반도체 유한회사 이미지 센서
US7193198B2 (en) 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
US20060103749A1 (en) 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
US7830437B2 (en) 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7238926B2 (en) * 2005-06-01 2007-07-03 Eastman Kodak Company Shared amplifier pixel with matched coupling capacitances
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US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
JP4747781B2 (ja) * 2005-10-27 2011-08-17 船井電機株式会社 撮像装置
JP4650249B2 (ja) * 2005-12-13 2011-03-16 船井電機株式会社 撮像装置
JP4747858B2 (ja) * 2006-01-27 2011-08-17 船井電機株式会社 撮像装置

Also Published As

Publication number Publication date
US20080273104A1 (en) 2008-11-06
US8159585B2 (en) 2012-04-17
KR101388276B1 (ko) 2014-04-22
US20120168611A1 (en) 2012-07-05
US8717476B2 (en) 2014-05-06
TWI450579B (zh) 2014-08-21
WO2008133861A1 (en) 2008-11-06
EP2140676B1 (en) 2015-08-19
EP2150038B1 (en) 2013-06-12
CN101675657A (zh) 2010-03-17
EP2150038A3 (en) 2012-05-30
EP2140676A1 (en) 2010-01-06
KR20100016124A (ko) 2010-02-12
JP2010526479A (ja) 2010-07-29
CN101675657B (zh) 2014-09-10
TW200922284A (en) 2009-05-16
EP2150038A2 (en) 2010-02-03

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