CN101675657B - 具有增益控制的图像传感器像素 - Google Patents
具有增益控制的图像传感器像素 Download PDFInfo
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- CN101675657B CN101675657B CN200880014156.8A CN200880014156A CN101675657B CN 101675657 B CN101675657 B CN 101675657B CN 200880014156 A CN200880014156 A CN 200880014156A CN 101675657 B CN101675657 B CN 101675657B
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- 238000012546 transfer Methods 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims description 52
- 238000005070 sampling Methods 0.000 claims description 22
- 206010034960 Photophobia Diseases 0.000 claims 5
- 230000003595 spectral effect Effects 0.000 claims 4
- 208000013469 light sensitivity Diseases 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 31
- 239000003990 capacitor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000007667 floating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001802 infusion Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/742,883 | 2007-05-01 | ||
| US11/742,883 US8159585B2 (en) | 2007-05-01 | 2007-05-01 | Image sensor pixel with gain control |
| PCT/US2008/005148 WO2008133861A1 (en) | 2007-05-01 | 2008-04-22 | Image sensor pixel with gain control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101675657A CN101675657A (zh) | 2010-03-17 |
| CN101675657B true CN101675657B (zh) | 2014-09-10 |
Family
ID=39473856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880014156.8A Active CN101675657B (zh) | 2007-05-01 | 2008-04-22 | 具有增益控制的图像传感器像素 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8159585B2 (enExample) |
| EP (2) | EP2140676B1 (enExample) |
| JP (1) | JP5230726B2 (enExample) |
| KR (1) | KR101388276B1 (enExample) |
| CN (1) | CN101675657B (enExample) |
| TW (1) | TWI450579B (enExample) |
| WO (1) | WO2008133861A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009136285A2 (en) * | 2008-04-16 | 2009-11-12 | Quantum Semiconductor Llc | Pixel circuitry for ultra wide dynamic range |
| JP4538528B2 (ja) | 2008-12-26 | 2010-09-08 | 廣津 和子 | 固体撮像素子 |
| US8411184B2 (en) * | 2009-12-22 | 2013-04-02 | Omnivision Technologies, Inc. | Column output circuits for image sensors |
| US9000500B2 (en) | 2009-12-30 | 2015-04-07 | Omnivision Technologies, Inc. | Image sensor with doped transfer gate |
| FR2995725A1 (fr) * | 2012-09-19 | 2014-03-21 | St Microelectronics Sa | Procede de commande d'un pixel cmos |
| CN102843524B (zh) * | 2012-09-25 | 2015-09-23 | 中国科学院上海高等研究院 | Cmos图像传感器及其工作方法 |
| CN111314632B (zh) * | 2013-03-14 | 2023-04-21 | 株式会社尼康 | 摄像单元及摄像装置 |
| US9578223B2 (en) | 2013-08-21 | 2017-02-21 | Qualcomm Incorporated | System and method for capturing images with multiple image sensing elements |
| US9160958B2 (en) | 2013-12-18 | 2015-10-13 | Omnivision Technologies, Inc. | Method of reading out an image sensor with transfer gate boost |
| JP6254048B2 (ja) * | 2014-06-05 | 2017-12-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR102591364B1 (ko) | 2015-09-23 | 2023-10-19 | 삼성디스플레이 주식회사 | 광 센서 및 이를 포함하는 표시 장치 |
| CN105681692B (zh) * | 2016-01-11 | 2018-10-30 | 珠海艾思克科技有限公司 | Cmos图像传感器及其复位噪声评估方法 |
| DE102016212784A1 (de) | 2016-07-13 | 2018-01-18 | Robert Bosch Gmbh | CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels |
| JP6420450B2 (ja) * | 2017-11-29 | 2018-11-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US11317038B2 (en) | 2017-12-19 | 2022-04-26 | SmartSens Technology (HK) Co., Ltd. | Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof |
| JP7299680B2 (ja) | 2018-08-23 | 2023-06-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
| US11114482B2 (en) | 2019-11-20 | 2021-09-07 | Gigajot Technology, Inc. | Scalable-pixel-size image sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1643755A1 (en) * | 2004-10-01 | 2006-04-05 | OmniVision Technologies, Inc. | Image sensor and pixel that has variable capacitance output or floating node |
| US7091531B2 (en) * | 2004-04-07 | 2006-08-15 | Micron Technology, Inc. | High dynamic range pixel amplifier |
| CN1833429A (zh) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | 双转换增益成像器 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251480A (ja) * | 1992-03-04 | 1993-09-28 | Sony Corp | 電荷電圧変換装置 |
| JP2000152086A (ja) * | 1998-11-11 | 2000-05-30 | Canon Inc | 撮像装置および撮像システム |
| JP3592106B2 (ja) * | 1998-11-27 | 2004-11-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| US6730897B2 (en) | 2000-12-29 | 2004-05-04 | Eastman Kodak Company | Linearity and dynamic range for complementary metal oxide semiconductor active pixel image sensors |
| US6960796B2 (en) | 2002-11-26 | 2005-11-01 | Micron Technology, Inc. | CMOS imager pixel designs with storage capacitor |
| JP2004336469A (ja) * | 2003-05-08 | 2004-11-25 | Fuji Film Microdevices Co Ltd | 固体撮像素子、撮像装置、及び画像処理方法 |
| US7026596B2 (en) * | 2003-10-30 | 2006-04-11 | Micron Technology, Inc. | High-low sensitivity pixel |
| JP4317115B2 (ja) * | 2004-04-12 | 2009-08-19 | 国立大学法人東北大学 | 固体撮像装置、光センサおよび固体撮像装置の動作方法 |
| JP4380439B2 (ja) * | 2004-07-16 | 2009-12-09 | ソニー株式会社 | データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器 |
| KR100656666B1 (ko) * | 2004-09-08 | 2006-12-11 | 매그나칩 반도체 유한회사 | 이미지 센서 |
| US20060103749A1 (en) | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
| US7830437B2 (en) | 2005-05-11 | 2010-11-09 | Aptina Imaging Corp. | High fill factor multi-way shared pixel |
| US7238926B2 (en) * | 2005-06-01 | 2007-07-03 | Eastman Kodak Company | Shared amplifier pixel with matched coupling capacitances |
| KR101010489B1 (ko) | 2005-06-21 | 2011-01-21 | 미츠비시덴키 가부시키가이샤 | 프로그램 실행 시스템을 위한 프로그래밍 시스템 및검사장치용 프로그램 작성 시스템 |
| US7432540B2 (en) * | 2005-08-01 | 2008-10-07 | Micron Technology, Inc. | Dual conversion gain gate and capacitor combination |
| JP4747781B2 (ja) * | 2005-10-27 | 2011-08-17 | 船井電機株式会社 | 撮像装置 |
| JP4650249B2 (ja) * | 2005-12-13 | 2011-03-16 | 船井電機株式会社 | 撮像装置 |
| JP4747858B2 (ja) * | 2006-01-27 | 2011-08-17 | 船井電機株式会社 | 撮像装置 |
-
2007
- 2007-05-01 US US11/742,883 patent/US8159585B2/en active Active
-
2008
- 2008-04-22 WO PCT/US2008/005148 patent/WO2008133861A1/en not_active Ceased
- 2008-04-22 KR KR1020097022858A patent/KR101388276B1/ko active Active
- 2008-04-22 EP EP08743163.1A patent/EP2140676B1/en active Active
- 2008-04-22 EP EP09176344.1A patent/EP2150038B1/en active Active
- 2008-04-22 JP JP2010506226A patent/JP5230726B2/ja active Active
- 2008-04-22 CN CN200880014156.8A patent/CN101675657B/zh active Active
- 2008-04-30 TW TW097116019A patent/TWI450579B/zh active
-
2012
- 2012-03-12 US US13/418,182 patent/US8717476B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1833429A (zh) * | 2003-06-11 | 2006-09-13 | 微米技术有限公司 | 双转换增益成像器 |
| US7091531B2 (en) * | 2004-04-07 | 2006-08-15 | Micron Technology, Inc. | High dynamic range pixel amplifier |
| EP1643755A1 (en) * | 2004-10-01 | 2006-04-05 | OmniVision Technologies, Inc. | Image sensor and pixel that has variable capacitance output or floating node |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080273104A1 (en) | 2008-11-06 |
| US8159585B2 (en) | 2012-04-17 |
| KR101388276B1 (ko) | 2014-04-22 |
| US20120168611A1 (en) | 2012-07-05 |
| US8717476B2 (en) | 2014-05-06 |
| TWI450579B (zh) | 2014-08-21 |
| WO2008133861A1 (en) | 2008-11-06 |
| EP2140676B1 (en) | 2015-08-19 |
| EP2150038B1 (en) | 2013-06-12 |
| CN101675657A (zh) | 2010-03-17 |
| EP2150038A3 (en) | 2012-05-30 |
| EP2140676A1 (en) | 2010-01-06 |
| KR20100016124A (ko) | 2010-02-12 |
| JP5230726B2 (ja) | 2013-07-10 |
| JP2010526479A (ja) | 2010-07-29 |
| TW200922284A (en) | 2009-05-16 |
| EP2150038A2 (en) | 2010-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: FULL VISION TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20110701 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: STATE OF NEW YORK, THE USA TO: STATE OF CALIFORNIA, THE USA |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20110701 Address after: California, USA Applicant after: Full Vision Technology Co., Ltd. Address before: American New York Applicant before: Eastman Kodak Co. |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: OmniVision Technologies, Inc. Address before: California, USA Patentee before: Full Vision Technology Co., Ltd. |