TWI450579B - 具有增益控制之影像感測器像素 - Google Patents

具有增益控制之影像感測器像素 Download PDF

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Publication number
TWI450579B
TWI450579B TW097116019A TW97116019A TWI450579B TW I450579 B TWI450579 B TW I450579B TW 097116019 A TW097116019 A TW 097116019A TW 97116019 A TW97116019 A TW 97116019A TW I450579 B TWI450579 B TW I450579B
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TW
Taiwan
Prior art keywords
charge
providing
voltage conversion
time
conversion region
Prior art date
Application number
TW097116019A
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English (en)
Chinese (zh)
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TW200922284A (en
Inventor
Christopher Parks
John T Compton
Original Assignee
Omnivision Tech Inc
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Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of TW200922284A publication Critical patent/TW200922284A/zh
Application granted granted Critical
Publication of TWI450579B publication Critical patent/TWI450579B/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
TW097116019A 2007-05-01 2008-04-30 具有增益控制之影像感測器像素 TWI450579B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/742,883 US8159585B2 (en) 2007-05-01 2007-05-01 Image sensor pixel with gain control

Publications (2)

Publication Number Publication Date
TW200922284A TW200922284A (en) 2009-05-16
TWI450579B true TWI450579B (zh) 2014-08-21

Family

ID=39473856

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097116019A TWI450579B (zh) 2007-05-01 2008-04-30 具有增益控制之影像感測器像素

Country Status (7)

Country Link
US (2) US8159585B2 (enExample)
EP (2) EP2140676B1 (enExample)
JP (1) JP5230726B2 (enExample)
KR (1) KR101388276B1 (enExample)
CN (1) CN101675657B (enExample)
TW (1) TWI450579B (enExample)
WO (1) WO2008133861A1 (enExample)

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WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
JP4538528B2 (ja) 2008-12-26 2010-09-08 廣津 和子 固体撮像素子
US8411184B2 (en) * 2009-12-22 2013-04-02 Omnivision Technologies, Inc. Column output circuits for image sensors
US9000500B2 (en) 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
FR2995725A1 (fr) * 2012-09-19 2014-03-21 St Microelectronics Sa Procede de commande d'un pixel cmos
CN102843524B (zh) * 2012-09-25 2015-09-23 中国科学院上海高等研究院 Cmos图像传感器及其工作方法
CN111314632B (zh) * 2013-03-14 2023-04-21 株式会社尼康 摄像单元及摄像装置
US9578223B2 (en) 2013-08-21 2017-02-21 Qualcomm Incorporated System and method for capturing images with multiple image sensing elements
US9160958B2 (en) 2013-12-18 2015-10-13 Omnivision Technologies, Inc. Method of reading out an image sensor with transfer gate boost
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
KR102591364B1 (ko) 2015-09-23 2023-10-19 삼성디스플레이 주식회사 광 센서 및 이를 포함하는 표시 장치
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
DE102016212784A1 (de) 2016-07-13 2018-01-18 Robert Bosch Gmbh CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels
JP6420450B2 (ja) * 2017-11-29 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
US11317038B2 (en) 2017-12-19 2022-04-26 SmartSens Technology (HK) Co., Ltd. Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof
JP7299680B2 (ja) 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム
US11114482B2 (en) 2019-11-20 2021-09-07 Gigajot Technology, Inc. Scalable-pixel-size image sensor

Citations (3)

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US20040251394A1 (en) * 2003-06-11 2004-12-16 Rhodes Howard E. Dual conversion gain imagers
TW200625927A (en) * 2004-09-08 2006-07-16 Magnachip Semiconductor Ltd Read-out circuit of image sensor
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier

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JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
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JP2004336469A (ja) * 2003-05-08 2004-11-25 Fuji Film Microdevices Co Ltd 固体撮像素子、撮像装置、及び画像処理方法
US7026596B2 (en) * 2003-10-30 2006-04-11 Micron Technology, Inc. High-low sensitivity pixel
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP4380439B2 (ja) * 2004-07-16 2009-12-09 ソニー株式会社 データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器
US7193198B2 (en) 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
US20060103749A1 (en) 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
US7830437B2 (en) 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7238926B2 (en) * 2005-06-01 2007-07-03 Eastman Kodak Company Shared amplifier pixel with matched coupling capacitances
KR101010489B1 (ko) 2005-06-21 2011-01-21 미츠비시덴키 가부시키가이샤 프로그램 실행 시스템을 위한 프로그래밍 시스템 및검사장치용 프로그램 작성 시스템
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
JP4747781B2 (ja) * 2005-10-27 2011-08-17 船井電機株式会社 撮像装置
JP4650249B2 (ja) * 2005-12-13 2011-03-16 船井電機株式会社 撮像装置
JP4747858B2 (ja) * 2006-01-27 2011-08-17 船井電機株式会社 撮像装置

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20040251394A1 (en) * 2003-06-11 2004-12-16 Rhodes Howard E. Dual conversion gain imagers
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
TW200625927A (en) * 2004-09-08 2006-07-16 Magnachip Semiconductor Ltd Read-out circuit of image sensor

Also Published As

Publication number Publication date
US20080273104A1 (en) 2008-11-06
US8159585B2 (en) 2012-04-17
KR101388276B1 (ko) 2014-04-22
US20120168611A1 (en) 2012-07-05
US8717476B2 (en) 2014-05-06
WO2008133861A1 (en) 2008-11-06
EP2140676B1 (en) 2015-08-19
EP2150038B1 (en) 2013-06-12
CN101675657A (zh) 2010-03-17
EP2150038A3 (en) 2012-05-30
EP2140676A1 (en) 2010-01-06
KR20100016124A (ko) 2010-02-12
JP5230726B2 (ja) 2013-07-10
JP2010526479A (ja) 2010-07-29
CN101675657B (zh) 2014-09-10
TW200922284A (en) 2009-05-16
EP2150038A2 (en) 2010-02-03

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