KR101388276B1 - 이미지 신호 판독 방법 - Google Patents

이미지 신호 판독 방법 Download PDF

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Publication number
KR101388276B1
KR101388276B1 KR1020097022858A KR20097022858A KR101388276B1 KR 101388276 B1 KR101388276 B1 KR 101388276B1 KR 1020097022858 A KR1020097022858 A KR 1020097022858A KR 20097022858 A KR20097022858 A KR 20097022858A KR 101388276 B1 KR101388276 B1 KR 101388276B1
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charge
providing
voltage conversion
transfer gate
image signal
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Korean (ko)
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KR20100016124A (ko
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크리스토퍼 파크스
존 토마스 컴프턴
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
KR1020097022858A 2007-05-01 2008-04-22 이미지 신호 판독 방법 Active KR101388276B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/742,883 2007-05-01
US11/742,883 US8159585B2 (en) 2007-05-01 2007-05-01 Image sensor pixel with gain control
PCT/US2008/005148 WO2008133861A1 (en) 2007-05-01 2008-04-22 Image sensor pixel with gain control

Publications (2)

Publication Number Publication Date
KR20100016124A KR20100016124A (ko) 2010-02-12
KR101388276B1 true KR101388276B1 (ko) 2014-04-22

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KR1020097022858A Active KR101388276B1 (ko) 2007-05-01 2008-04-22 이미지 신호 판독 방법

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US (2) US8159585B2 (enExample)
EP (2) EP2140676B1 (enExample)
JP (1) JP5230726B2 (enExample)
KR (1) KR101388276B1 (enExample)
CN (1) CN101675657B (enExample)
TW (1) TWI450579B (enExample)
WO (1) WO2008133861A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
JP4538528B2 (ja) 2008-12-26 2010-09-08 廣津 和子 固体撮像素子
US8411184B2 (en) * 2009-12-22 2013-04-02 Omnivision Technologies, Inc. Column output circuits for image sensors
US9000500B2 (en) 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
FR2995725A1 (fr) * 2012-09-19 2014-03-21 St Microelectronics Sa Procede de commande d'un pixel cmos
CN102843524B (zh) * 2012-09-25 2015-09-23 中国科学院上海高等研究院 Cmos图像传感器及其工作方法
CN111314632B (zh) * 2013-03-14 2023-04-21 株式会社尼康 摄像单元及摄像装置
US9578223B2 (en) 2013-08-21 2017-02-21 Qualcomm Incorporated System and method for capturing images with multiple image sensing elements
US9160958B2 (en) 2013-12-18 2015-10-13 Omnivision Technologies, Inc. Method of reading out an image sensor with transfer gate boost
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
KR102591364B1 (ko) 2015-09-23 2023-10-19 삼성디스플레이 주식회사 광 센서 및 이를 포함하는 표시 장치
CN105681692B (zh) * 2016-01-11 2018-10-30 珠海艾思克科技有限公司 Cmos图像传感器及其复位噪声评估方法
DE102016212784A1 (de) 2016-07-13 2018-01-18 Robert Bosch Gmbh CMOS Pixel, Bildsensor und Kamera sowie Verfahren zum Auslesen eienes CMOS Pixels
JP6420450B2 (ja) * 2017-11-29 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
US11317038B2 (en) 2017-12-19 2022-04-26 SmartSens Technology (HK) Co., Ltd. Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof
JP7299680B2 (ja) 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム
US11114482B2 (en) 2019-11-20 2021-09-07 Gigajot Technology, Inc. Scalable-pixel-size image sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251480A (ja) * 1992-03-04 1993-09-28 Sony Corp 電荷電圧変換装置
JP3592106B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6730897B2 (en) 2000-12-29 2004-05-04 Eastman Kodak Company Linearity and dynamic range for complementary metal oxide semiconductor active pixel image sensors
US6960796B2 (en) 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
JP2004336469A (ja) * 2003-05-08 2004-11-25 Fuji Film Microdevices Co Ltd 固体撮像素子、撮像装置、及び画像処理方法
US7075049B2 (en) * 2003-06-11 2006-07-11 Micron Technology, Inc. Dual conversion gain imagers
US7026596B2 (en) * 2003-10-30 2006-04-11 Micron Technology, Inc. High-low sensitivity pixel
US7091531B2 (en) * 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
JP4317115B2 (ja) * 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP4380439B2 (ja) * 2004-07-16 2009-12-09 ソニー株式会社 データ処理方法およびデータ処理装置並びに物理量分布検知の半導体装置および電子機器
KR100656666B1 (ko) * 2004-09-08 2006-12-11 매그나칩 반도체 유한회사 이미지 센서
US7193198B2 (en) 2004-10-01 2007-03-20 Omnivision Technologies, Inc. Image sensor and pixel that has variable capacitance output or floating node
US20060103749A1 (en) 2004-11-12 2006-05-18 Xinping He Image sensor and pixel that has switchable capacitance at the floating node
US7830437B2 (en) 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7238926B2 (en) * 2005-06-01 2007-07-03 Eastman Kodak Company Shared amplifier pixel with matched coupling capacitances
KR101010489B1 (ko) 2005-06-21 2011-01-21 미츠비시덴키 가부시키가이샤 프로그램 실행 시스템을 위한 프로그래밍 시스템 및검사장치용 프로그램 작성 시스템
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
JP4747781B2 (ja) * 2005-10-27 2011-08-17 船井電機株式会社 撮像装置
JP4650249B2 (ja) * 2005-12-13 2011-03-16 船井電機株式会社 撮像装置
JP4747858B2 (ja) * 2006-01-27 2011-08-17 船井電機株式会社 撮像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000152086A (ja) * 1998-11-11 2000-05-30 Canon Inc 撮像装置および撮像システム

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Publication number Publication date
US20080273104A1 (en) 2008-11-06
US8159585B2 (en) 2012-04-17
US20120168611A1 (en) 2012-07-05
US8717476B2 (en) 2014-05-06
TWI450579B (zh) 2014-08-21
WO2008133861A1 (en) 2008-11-06
EP2140676B1 (en) 2015-08-19
EP2150038B1 (en) 2013-06-12
CN101675657A (zh) 2010-03-17
EP2150038A3 (en) 2012-05-30
EP2140676A1 (en) 2010-01-06
KR20100016124A (ko) 2010-02-12
JP5230726B2 (ja) 2013-07-10
JP2010526479A (ja) 2010-07-29
CN101675657B (zh) 2014-09-10
TW200922284A (en) 2009-05-16
EP2150038A2 (en) 2010-02-03

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