JP5230597B2 - 自己整合電極を有する電子デバイス - Google Patents

自己整合電極を有する電子デバイス Download PDF

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Publication number
JP5230597B2
JP5230597B2 JP2009502226A JP2009502226A JP5230597B2 JP 5230597 B2 JP5230597 B2 JP 5230597B2 JP 2009502226 A JP2009502226 A JP 2009502226A JP 2009502226 A JP2009502226 A JP 2009502226A JP 5230597 B2 JP5230597 B2 JP 5230597B2
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Japan
Prior art keywords
electrode
gate
layer
dielectric layer
channel
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Expired - Fee Related
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JP2009502226A
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English (en)
Japanese (ja)
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JP2009531848A (ja
JP2009531848A5 (enExample
Inventor
ポール・エー・カイン
ヨン−ヤン・ノー
ヘニング・サーリングハウス
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Cambridge Enterprise Ltd
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Cambridge Enterprise Ltd
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Filing date
Publication date
Priority claimed from GB0606257A external-priority patent/GB0606257D0/en
Priority claimed from GB0606258A external-priority patent/GB0606258D0/en
Priority claimed from GB0606773A external-priority patent/GB0606773D0/en
Priority claimed from GB0624383A external-priority patent/GB0624383D0/en
Priority claimed from GB0624382A external-priority patent/GB0624382D0/en
Application filed by Cambridge Enterprise Ltd filed Critical Cambridge Enterprise Ltd
Publication of JP2009531848A publication Critical patent/JP2009531848A/ja
Publication of JP2009531848A5 publication Critical patent/JP2009531848A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009502226A 2006-03-29 2007-03-28 自己整合電極を有する電子デバイス Expired - Fee Related JP5230597B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
GB0606257A GB0606257D0 (en) 2006-03-29 2006-03-29 Techniques for device fabrication using laser ablation
GB0606258A GB0606258D0 (en) 2006-03-29 2006-03-29 Techniques for device fabrication using printing
GB0606258.2 2006-03-29
GB0606257.4 2006-03-29
GB0606773.0 2006-04-05
GB0606773A GB0606773D0 (en) 2006-04-05 2006-04-05 Techniques for device fabrication using printing
GB0624383A GB0624383D0 (en) 2006-12-06 2006-12-06 Techniques for device fabrication using printing
GB0624382A GB0624382D0 (en) 2006-12-06 2006-12-06 Techniques for device fabrication using laser ablation
GB0624383.6 2006-12-06
GB0624382.8 2006-12-06
PCT/GB2007/050160 WO2007110671A2 (en) 2006-03-29 2007-03-28 Techniques for device fabrication with self-aligned electrodes

Related Child Applications (1)

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JP2013010912A Division JP5636446B2 (ja) 2006-03-29 2013-01-24 自己整合電極を有するデバイスの作製方法

Publications (3)

Publication Number Publication Date
JP2009531848A JP2009531848A (ja) 2009-09-03
JP2009531848A5 JP2009531848A5 (enExample) 2010-05-13
JP5230597B2 true JP5230597B2 (ja) 2013-07-10

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JP2009502226A Expired - Fee Related JP5230597B2 (ja) 2006-03-29 2007-03-28 自己整合電極を有する電子デバイス
JP2013010912A Expired - Fee Related JP5636446B2 (ja) 2006-03-29 2013-01-24 自己整合電極を有するデバイスの作製方法

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Country Link
US (2) US8987808B2 (enExample)
EP (1) EP2005499B1 (enExample)
JP (2) JP5230597B2 (enExample)
WO (1) WO2007110671A2 (enExample)

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Also Published As

Publication number Publication date
WO2007110671A2 (en) 2007-10-04
US20130075734A1 (en) 2013-03-28
JP2009531848A (ja) 2009-09-03
US20090166612A1 (en) 2009-07-02
JP2013131766A (ja) 2013-07-04
WO2007110671A3 (en) 2007-12-21
US8900955B2 (en) 2014-12-02
US8987808B2 (en) 2015-03-24
EP2005499B1 (en) 2013-04-24
JP5636446B2 (ja) 2014-12-03
EP2005499A2 (en) 2008-12-24

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