JP5215055B2 - 拡散装置支持体 - Google Patents

拡散装置支持体 Download PDF

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Publication number
JP5215055B2
JP5215055B2 JP2008158915A JP2008158915A JP5215055B2 JP 5215055 B2 JP5215055 B2 JP 5215055B2 JP 2008158915 A JP2008158915 A JP 2008158915A JP 2008158915 A JP2008158915 A JP 2008158915A JP 5215055 B2 JP5215055 B2 JP 5215055B2
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Prior art keywords
backing plate
diffuser
support member
chamber
frame structure
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Japanese (ja)
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JP2009065121A (ja
JP2009065121A5 (cg-RX-API-DMAC7.html
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エム ホワイト ジョン
エル ティナー ロビン
カート チャン イエイ
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008158915A 2007-06-22 2008-06-18 拡散装置支持体 Active JP5215055B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/767,307 2007-06-22
US11/767,307 US20080317973A1 (en) 2007-06-22 2007-06-22 Diffuser support

Publications (3)

Publication Number Publication Date
JP2009065121A JP2009065121A (ja) 2009-03-26
JP2009065121A5 JP2009065121A5 (cg-RX-API-DMAC7.html) 2011-08-04
JP5215055B2 true JP5215055B2 (ja) 2013-06-19

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Family Applications (1)

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JP2008158915A Active JP5215055B2 (ja) 2007-06-22 2008-06-18 拡散装置支持体

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US (2) US20080317973A1 (cg-RX-API-DMAC7.html)
JP (1) JP5215055B2 (cg-RX-API-DMAC7.html)
KR (1) KR101016860B1 (cg-RX-API-DMAC7.html)
CN (2) CN102251227B (cg-RX-API-DMAC7.html)
TW (1) TWI389172B (cg-RX-API-DMAC7.html)

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TWI663674B (zh) * 2017-07-25 2019-06-21 漢民科技股份有限公司 用於半導體製程之腔體蓋與頂板之組合體及成膜裝置
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US9580804B2 (en) 2017-02-28
TW200908079A (en) 2009-02-16
JP2009065121A (ja) 2009-03-26
CN102251227A (zh) 2011-11-23
US20080317973A1 (en) 2008-12-25
CN101333651A (zh) 2008-12-31
CN102251227B (zh) 2013-11-27
KR101016860B1 (ko) 2011-02-22
TWI389172B (zh) 2013-03-11
CN101333651B (zh) 2011-08-24
KR20080112961A (ko) 2008-12-26

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