JP5193368B2 - 材料を蒸着する方法 - Google Patents
材料を蒸着する方法 Download PDFInfo
- Publication number
- JP5193368B2 JP5193368B2 JP2011524342A JP2011524342A JP5193368B2 JP 5193368 B2 JP5193368 B2 JP 5193368B2 JP 2011524342 A JP2011524342 A JP 2011524342A JP 2011524342 A JP2011524342 A JP 2011524342A JP 5193368 B2 JP5193368 B2 JP 5193368B2
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- JP
- Japan
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- sample
- target
- laser beam
- plume
- target material
- Prior art date
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- 239000000463 material Substances 0.000 title abstract description 13
- 239000013077 target material Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 12
- 238000010894 electron beam technology Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 230000001419 dependent effect Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 description 38
- 230000008021 deposition Effects 0.000 description 10
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Description
・ターゲットの表面にレーザービーム又は電子ビームを照射して、ターゲット材料粒子のプルームを生成させる。
・ターゲット材料粒子がサンプルの表面に蒸着されるように、プルーム近傍にサンプルを位置させる。
・粒子が蒸着されるサンプルの表面に対して垂直な回転軸回りに、サンプルを回転させる。
・プルームが前記回転軸に対して半径方向に移動するように、ターゲットの表面に沿ってレーザービームを移動させる。
・可変周波数で、レーザービームのパルスを発する。
Claims (7)
- サンプルの表面にターゲットの材料を蒸着する方法であって、
前記方法は、
ターゲットの表面にレーザービーム又は電子ビームを照射して、ターゲット材料粒子のプルームを生成させるステップと、
ターゲット材料粒子がサンプルの表面に蒸着されるように、プルーム近傍にサンプルを位置させるステップと、を有し、
さらに、粒子が蒸着されるサンプルの表面に対して垂直な回転軸回りに、サンプルを回転させるステップと、
プルームが前記回転軸に対して半径方向に移動するように、ターゲットの表面に沿ってレーザービームを移動させるステップと、
可変周波数で、レーザービームのパルスを発するステップと、を有することを特徴とする方法。 - 前記サンプル表面は、ディスク形状である、請求項1記載の方法。
- 前記ターゲットの表面は、前記サンプルの表面に対してほぼ平行である、請求項1又は2に記載の方法。
- 前記ターゲット材料はロッドであり、その長手方向軸に沿って回転可能である、請求項1〜3のいずれか1つに記載の方法。
- 前記サンプルの角速度は、前記回転軸と前記ターゲットの表面のレーザービームの接触領域との間の距離に依存している、請求項1〜4のいずれか1つに記載の方法。
- 前記レーザービームのパルス周波数は、前記回転軸と前記ターゲットの表面のレーザービームの接触領域との間の距離に依存している、請求項1〜5のいずれか1つに記載の方法。
- 前記パルス周波数は、1Hzから500Hzの範囲である、請求項1〜6のいずれか1つに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08014970.1 | 2008-08-25 | ||
EP08014970A EP2159300B1 (en) | 2008-08-25 | 2008-08-25 | Method for depositing a material |
PCT/EP2009/060859 WO2010023174A1 (en) | 2008-08-25 | 2009-08-24 | Method for depositing a material |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012500901A JP2012500901A (ja) | 2012-01-12 |
JP5193368B2 true JP5193368B2 (ja) | 2013-05-08 |
Family
ID=40251818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011524342A Active JP5193368B2 (ja) | 2008-08-25 | 2009-08-24 | 材料を蒸着する方法 |
Country Status (13)
Country | Link |
---|---|
US (1) | US9074282B2 (ja) |
EP (1) | EP2159300B1 (ja) |
JP (1) | JP5193368B2 (ja) |
KR (2) | KR20130054465A (ja) |
CN (1) | CN102131952B (ja) |
AT (1) | ATE537277T1 (ja) |
DK (1) | DK2159300T3 (ja) |
ES (1) | ES2378906T3 (ja) |
HR (1) | HRP20120120T1 (ja) |
PL (1) | PL2159300T3 (ja) |
PT (1) | PT2159300E (ja) |
SI (1) | SI2159300T1 (ja) |
WO (1) | WO2010023174A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2722412B1 (en) * | 2012-10-17 | 2018-04-25 | Solmates B.V. | Method for depositing a target material onto a sensitive material |
EP2910664B1 (en) * | 2014-02-21 | 2019-04-03 | Solmates B.V. | Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device |
EP3540090A1 (en) | 2018-03-12 | 2019-09-18 | Solmates B.V. | Method for pulsed laser deposition |
Family Cites Families (27)
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US4740386A (en) * | 1987-03-30 | 1988-04-26 | Rockwell International Corporation | Method for depositing a ternary compound having a compositional profile |
JPH01319673A (ja) * | 1988-06-21 | 1989-12-25 | Furukawa Electric Co Ltd:The | レーザビームスパッタ法 |
DE3914476C1 (ja) * | 1989-05-02 | 1990-06-21 | Forschungszentrum Juelich Gmbh, 5170 Juelich, De | |
JPH03104861A (ja) * | 1989-05-26 | 1991-05-01 | Rockwell Internatl Corp | レーザアブレーションに使用するための装置 |
JP3110473B2 (ja) * | 1990-03-01 | 2000-11-20 | 住友電気工業株式会社 | 酸化物超電導薄膜の製造方法 |
US5578350A (en) * | 1990-07-03 | 1996-11-26 | Fraunhofer-Gesellschaft | Method for depositing a thin layer on a substrate by laser pulse vapor deposition |
JP3255469B2 (ja) * | 1992-11-30 | 2002-02-12 | 三菱電機株式会社 | レーザ薄膜形成装置 |
US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
JPH0770740A (ja) * | 1993-09-01 | 1995-03-14 | Hitachi Zosen Corp | 導電性薄膜の形成方法 |
US5411772A (en) * | 1994-01-25 | 1995-05-02 | Rockwell International Corporation | Method of laser ablation for uniform thin film deposition |
KR0153568B1 (ko) * | 1994-12-31 | 1998-12-01 | 임효빈 | 펄스레이저를 이용한 대면적 박막의 제조 장치 및 방법 |
AUPO912797A0 (en) * | 1997-09-11 | 1997-10-02 | Australian National University, The | Ultrafast laser deposition method |
US6297138B1 (en) * | 1998-01-12 | 2001-10-02 | Ford Global Technologies, Inc. | Method of depositing a metal film onto MOS sensors |
US6090207A (en) * | 1998-04-02 | 2000-07-18 | Neocera, Inc. | Translational target assembly for thin film deposition system |
WO2000022184A1 (en) * | 1998-10-12 | 2000-04-20 | The Regents Of The University Of California | Laser deposition of thin films |
JP4621333B2 (ja) * | 2000-06-01 | 2011-01-26 | ホーチキ株式会社 | 薄膜形成方法 |
AUPR026100A0 (en) * | 2000-09-20 | 2000-10-12 | Tamanyan, Astghik | Deposition of thin films by laser ablation |
US6761986B2 (en) * | 2001-04-06 | 2004-07-13 | Rockwell Scientific Licensing, Llc | Thin film infrared transparent conductor |
US20030129324A1 (en) * | 2001-09-07 | 2003-07-10 | The Regents Of The University Of California | Synthesis of films and particles of organic molecules by laser ablation |
WO2003091157A1 (fr) * | 2002-04-26 | 2003-11-06 | Sumitomo Electric Industries, Ltd. | Procede de production de couche mince d'oxyde superconductrice |
JP2004068100A (ja) * | 2002-08-07 | 2004-03-04 | Shimadzu Corp | イオンビーム成膜装置 |
JP4464650B2 (ja) * | 2003-10-01 | 2010-05-19 | 富士通株式会社 | レーザ蒸着装置 |
US7557511B2 (en) * | 2005-08-01 | 2009-07-07 | Neocera, Llc | Apparatus and method utilizing high power density electron beam for generating pulsed stream of ablation plasma |
JP5666138B2 (ja) * | 2007-02-23 | 2015-02-12 | ピコデオン・リミテッド・オサケユキテュアPicodeon Ltd Oy | 設備 |
US7869112B2 (en) * | 2008-07-25 | 2011-01-11 | Prysm, Inc. | Beam scanning based on two-dimensional polygon scanner for display and other applications |
EP2204468B1 (en) * | 2009-01-06 | 2012-10-17 | Solmates B.V. | Device for projecting an image on a surface and device for moving said image |
EP2243855B1 (en) * | 2009-04-22 | 2021-03-03 | Solmates B.V. | Pulsed laser deposition with exchangeable shadow masks |
-
2008
- 2008-08-25 PL PL08014970T patent/PL2159300T3/pl unknown
- 2008-08-25 SI SI200830547T patent/SI2159300T1/sl unknown
- 2008-08-25 AT AT08014970T patent/ATE537277T1/de active
- 2008-08-25 ES ES08014970T patent/ES2378906T3/es active Active
- 2008-08-25 EP EP08014970A patent/EP2159300B1/en active Active
- 2008-08-25 DK DK08014970.1T patent/DK2159300T3/da active
- 2008-08-25 PT PT08014970T patent/PT2159300E/pt unknown
-
2009
- 2009-08-24 US US13/060,340 patent/US9074282B2/en active Active
- 2009-08-24 KR KR1020137011692A patent/KR20130054465A/ko not_active Application Discontinuation
- 2009-08-24 CN CN2009801336214A patent/CN102131952B/zh active Active
- 2009-08-24 KR KR1020117006799A patent/KR101307592B1/ko active IP Right Grant
- 2009-08-24 JP JP2011524342A patent/JP5193368B2/ja active Active
- 2009-08-24 WO PCT/EP2009/060859 patent/WO2010023174A1/en active Application Filing
-
2012
- 2012-02-03 HR HRP20120120AT patent/HRP20120120T1/hr unknown
Also Published As
Publication number | Publication date |
---|---|
EP2159300B1 (en) | 2011-12-14 |
US20110236601A1 (en) | 2011-09-29 |
WO2010023174A1 (en) | 2010-03-04 |
ES2378906T3 (es) | 2012-04-19 |
ATE537277T1 (de) | 2011-12-15 |
KR20130054465A (ko) | 2013-05-24 |
SI2159300T1 (sl) | 2012-05-31 |
PT2159300E (pt) | 2012-03-08 |
CN102131952B (zh) | 2013-04-17 |
KR101307592B1 (ko) | 2013-09-12 |
JP2012500901A (ja) | 2012-01-12 |
PL2159300T3 (pl) | 2012-06-29 |
HRP20120120T1 (hr) | 2012-05-31 |
DK2159300T3 (da) | 2012-02-27 |
US9074282B2 (en) | 2015-07-07 |
EP2159300A1 (en) | 2010-03-03 |
CN102131952A (zh) | 2011-07-20 |
KR20110047249A (ko) | 2011-05-06 |
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