US9074282B2 - Method for depositing a material - Google Patents

Method for depositing a material Download PDF

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Publication number
US9074282B2
US9074282B2 US13/060,340 US200913060340A US9074282B2 US 9074282 B2 US9074282 B2 US 9074282B2 US 200913060340 A US200913060340 A US 200913060340A US 9074282 B2 US9074282 B2 US 9074282B2
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United States
Prior art keywords
sample
target
laser beam
plume
onto
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US13/060,340
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US20110236601A1 (en
Inventor
Jan Arnaud Janssens
Gerard Cornelis Van Den Eijkel
Jan Matthijn Dekkers
Joska Johannes Broekmaat
Paul Te Riele
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Lam Research Corp
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SOLMATES BV
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Assigned to SOLMATES B.V. reassignment SOLMATES B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BROEKMAAT, JOSKA JOHANNES, DEKKERS, JAN MATTHIJN, JANSSENS, JAN ARNOUD, VAN DEN EIJKEL, GERARD CORNELIS, TE RIELE, PAUL
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Assigned to LAM RESEARCH CORPORATION reassignment LAM RESEARCH CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SOLMATES B.V.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Definitions

  • the invention relates to a method for depositing a material of a target onto a surface of a sample, which method comprises the steps of:
  • PLD pulsed laser deposition
  • the PLD technique is only suited for small scale applications.
  • the current technology typically a surface of about 10 mm by 10 mm is covered in a homogeneously layer. This area is limited by the plasma plume created during the PLD technique. This plume is only uniform in a small area of typically 10 mm by 10 mm.
  • the sample surface is disc shaped and preferably the surface of the target is substantially parallel to the surface of the sample.
  • the target material is a rod, which is rotatable along its longitudinal axis.
  • the target material is irradiated by the laser beam a small portion of the material will be ablated and these particles will form the plume. If the laser beam irradiates only one small portion of the target the ablated amount of material will become substantial and will disturb the PLD process. In particular when large surfaces are coated with this PLD technique according to the invention substantial amounts of material will be ablated and this will have its effect on the target material and onto the process.
  • a rod shaped target material which can be rotated along its longitudinal axis it is possible to switch the area at the target material from which the material is ablated. In combination with the moving laser beam and rotation of the rod it is possible to have an even ablation of material from the target material.
  • the angular velocity of the sample is dependent on the distance between the rotation axis and the contact area of the laser beam on the surface of the target.
  • the pulse frequency of the laser beam is dependent on the distance between the rotation axis and the contact area of the laser beam on the surface of the target.
  • the pulse frequency would be lower when depositing near the center of the sample than when depositing at the outer edge of the sample.
  • the angular velocity is also varied an optimum can be simply calculated.
  • the pulsing frequency of the laser beam is in the range of 1 Hz and 500 Hz.
  • FIG. 1 shows in schematic way the method according to the invention.
  • FIG. 2 shows a top view of a sample with schematically shown the positions.
  • FIG. 3 shows a second embodiment of the invention.
  • FIG. 1 a rotatable sample holder 1 is shown. Onto this rotatable sample holder 1 a sample 2 is arranged. This sample 2 is typically a thin disc of a suitable material, which needs to be coated.
  • This target material has the shape of a rod and has two journals 4 , 5 with which the target material 3 can be rotated along the longitudinal axis 6 .
  • a laser beam 7 from a laser device is directed onto a mirror 8 .
  • This mirror 8 is tiltable.
  • the laser beam 7 is reflected by the mirror 8 and projected onto the target material 3 in order to create a plume 9 .
  • This plume 9 consists out of ablated target material 3 .
  • the fixed laser beam 7 By tilting the mirror 8 the fixed laser beam 7 can be moved over the surface of the target material 3 in the direction of the longitudinal axis 6 . As a result the plume 9 is movable in radial direction of the sample disc 2 .
  • FIG. 2 the sample disc 2 is shown and a number of depositions 10 . These depositions 10 are the result of the plume 9 . By tilting the mirror 8 plume 9 is moved in radial direction of the disc 2 having the result shown in FIG. 2 .
  • the deposition rate is modified by varying the frequency of the laser beam such that less material is deposited near the center 11 and more material deposited near the edge of the sample disc.
  • FIG. 3 shows a second embodiment in a schematic view of the invention.
  • a rotatable sample holder 20 is shown onto which a sample 21 is arranged.
  • a rotatable target material holder 22 is arranged above this rotatable sample holder.
  • a target 23 is placed on this target holder 22 , which has in this embodiment a disc-like shape.
  • FIG. 3 shows a laser beam or electron beam 24 , which is directed to a focused mirror 25 which directs the laser beam to a translatable flat mirror 26 .
  • This flat mirror 26 directs the laser beam onto the target material 23 causing a plume 27 of particles of the target material, which will be deposited onto the sample material 21 .
  • the flat mirror 26 is guided along a guide 28 such that the mirror 26 can be translated.
  • the laser beam 24 can be moved over the surface of the target material 23 and thus the plume 27 can be moved over de surface of the sample material 21 .

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US13/060,340 2008-08-25 2009-08-24 Method for depositing a material Active 2031-12-09 US9074282B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08014970A EP2159300B1 (en) 2008-08-25 2008-08-25 Method for depositing a material
EP08014970.1 2008-08-25
EP08014970 2008-08-25
PCT/EP2009/060859 WO2010023174A1 (en) 2008-08-25 2009-08-24 Method for depositing a material

Publications (2)

Publication Number Publication Date
US20110236601A1 US20110236601A1 (en) 2011-09-29
US9074282B2 true US9074282B2 (en) 2015-07-07

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US13/060,340 Active 2031-12-09 US9074282B2 (en) 2008-08-25 2009-08-24 Method for depositing a material

Country Status (13)

Country Link
US (1) US9074282B2 (ja)
EP (1) EP2159300B1 (ja)
JP (1) JP5193368B2 (ja)
KR (2) KR101307592B1 (ja)
CN (1) CN102131952B (ja)
AT (1) ATE537277T1 (ja)
DK (1) DK2159300T3 (ja)
ES (1) ES2378906T3 (ja)
HR (1) HRP20120120T1 (ja)
PL (1) PL2159300T3 (ja)
PT (1) PT2159300E (ja)
SI (1) SI2159300T1 (ja)
WO (1) WO2010023174A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177117B2 (en) 2018-03-12 2021-11-16 Solmates B.V. Method for pulsed laser deposition

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2722412B1 (en) * 2012-10-17 2018-04-25 Solmates B.V. Method for depositing a target material onto a sensitive material
EP2910664B1 (en) 2014-02-21 2019-04-03 Solmates B.V. Device for depositing a material by pulsed laser deposition and a method for depositing a material with the device

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US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
JPH01319673A (ja) 1988-06-21 1989-12-25 Furukawa Electric Co Ltd:The レーザビームスパッタ法
US5049405A (en) * 1989-05-26 1991-09-17 Rockwell International Corporation Method of thin film deposition using laser ablation
US5084300A (en) * 1989-05-02 1992-01-28 Forschungszentrum Julich Gmbh Apparatus for the ablation of material from a target and coating method and apparatus
JPH0770740A (ja) * 1993-09-01 1995-03-14 Hitachi Zosen Corp 導電性薄膜の形成方法
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
US5578350A (en) * 1990-07-03 1996-11-26 Fraunhofer-Gesellschaft Method for depositing a thin layer on a substrate by laser pulse vapor deposition
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
WO1999013127A1 (en) * 1997-09-11 1999-03-18 The Australian National University Thin films of amorphous and crystalline microstructures based on ultrafast pulsed laser deposition
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
US6297138B1 (en) * 1998-01-12 2001-10-02 Ford Global Technologies, Inc. Method of depositing a metal film onto MOS sensors
US6372103B1 (en) * 1998-10-12 2002-04-16 The Regents Of The University Of California Ultrashort pulse laser deposition of thin films
US20030129324A1 (en) * 2001-09-07 2003-07-10 The Regents Of The University Of California Synthesis of films and particles of organic molecules by laser ablation
US20040033702A1 (en) * 2000-09-20 2004-02-19 Astghik Tamanyan Deposition of thin films by laser ablation
US20050014033A1 (en) * 2001-04-06 2005-01-20 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor
EP1516854A1 (en) 2002-04-26 2005-03-23 SUMITOMO ELECTRIC INDUSTRIES Ltd Process for producing oxide superconductive thin-film
US20070026160A1 (en) * 2005-08-01 2007-02-01 Mikhail Strikovski Apparatus and method utilizing high power density electron beam for generating pulsed stream of ablation plasma
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US20110292354A1 (en) * 2009-01-06 2011-12-01 Solmates B.V. Device for Projecting an Image on a Surface and Device for Moving Said Image
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JP4621333B2 (ja) * 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
JP2004068100A (ja) * 2002-08-07 2004-03-04 Shimadzu Corp イオンビーム成膜装置
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JPH01319673A (ja) 1988-06-21 1989-12-25 Furukawa Electric Co Ltd:The レーザビームスパッタ法
US5084300A (en) * 1989-05-02 1992-01-28 Forschungszentrum Julich Gmbh Apparatus for the ablation of material from a target and coating method and apparatus
US5049405A (en) * 1989-05-26 1991-09-17 Rockwell International Corporation Method of thin film deposition using laser ablation
US5578350A (en) * 1990-07-03 1996-11-26 Fraunhofer-Gesellschaft Method for depositing a thin layer on a substrate by laser pulse vapor deposition
US5622567A (en) * 1992-11-30 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus using laser
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
JPH0770740A (ja) * 1993-09-01 1995-03-14 Hitachi Zosen Corp 導電性薄膜の形成方法
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US8828506B2 (en) * 2007-02-23 2014-09-09 Picodeon Ltd Oy Arrangement
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US20110292354A1 (en) * 2009-01-06 2011-12-01 Solmates B.V. Device for Projecting an Image on a Surface and Device for Moving Said Image
US8979282B2 (en) * 2009-01-06 2015-03-17 Solmates B.V. Device for projecting an image on a surface and device for moving said image
US20120122317A1 (en) * 2009-04-22 2012-05-17 Solmates B.V. Pulsed Laser Deposition with Exchangeable Shadow Masks

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177117B2 (en) 2018-03-12 2021-11-16 Solmates B.V. Method for pulsed laser deposition

Also Published As

Publication number Publication date
EP2159300A1 (en) 2010-03-03
DK2159300T3 (da) 2012-02-27
SI2159300T1 (sl) 2012-05-31
CN102131952B (zh) 2013-04-17
HRP20120120T1 (hr) 2012-05-31
EP2159300B1 (en) 2011-12-14
JP2012500901A (ja) 2012-01-12
PL2159300T3 (pl) 2012-06-29
JP5193368B2 (ja) 2013-05-08
ES2378906T3 (es) 2012-04-19
WO2010023174A1 (en) 2010-03-04
KR101307592B1 (ko) 2013-09-12
ATE537277T1 (de) 2011-12-15
KR20110047249A (ko) 2011-05-06
KR20130054465A (ko) 2013-05-24
US20110236601A1 (en) 2011-09-29
PT2159300E (pt) 2012-03-08
CN102131952A (zh) 2011-07-20

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Effective date: 20221011