ATE537277T1 - Verfahren zur abscheidung eines materials - Google Patents

Verfahren zur abscheidung eines materials

Info

Publication number
ATE537277T1
ATE537277T1 AT08014970T AT08014970T ATE537277T1 AT E537277 T1 ATE537277 T1 AT E537277T1 AT 08014970 T AT08014970 T AT 08014970T AT 08014970 T AT08014970 T AT 08014970T AT E537277 T1 ATE537277 T1 AT E537277T1
Authority
AT
Austria
Prior art keywords
sample
target
plume
onto
rotation axis
Prior art date
Application number
AT08014970T
Other languages
English (en)
Inventor
Jan Amaud Janssens
De Eijkel Gerard Van
Jan Matthijn Dekkers
Joska Johannes Broekmaat
Riele Paul Te
Original Assignee
Solmates Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solmates Bv filed Critical Solmates Bv
Application granted granted Critical
Publication of ATE537277T1 publication Critical patent/ATE537277T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT08014970T 2008-08-25 2008-08-25 Verfahren zur abscheidung eines materials ATE537277T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08014970A EP2159300B1 (de) 2008-08-25 2008-08-25 Verfahren zur Abscheidung eines Materials

Publications (1)

Publication Number Publication Date
ATE537277T1 true ATE537277T1 (de) 2011-12-15

Family

ID=40251818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08014970T ATE537277T1 (de) 2008-08-25 2008-08-25 Verfahren zur abscheidung eines materials

Country Status (13)

Country Link
US (1) US9074282B2 (de)
EP (1) EP2159300B1 (de)
JP (1) JP5193368B2 (de)
KR (2) KR101307592B1 (de)
CN (1) CN102131952B (de)
AT (1) ATE537277T1 (de)
DK (1) DK2159300T3 (de)
ES (1) ES2378906T3 (de)
HR (1) HRP20120120T1 (de)
PL (1) PL2159300T3 (de)
PT (1) PT2159300E (de)
SI (1) SI2159300T1 (de)
WO (1) WO2010023174A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2722412B1 (de) * 2012-10-17 2018-04-25 Solmates B.V. Verfahren zum Abscheiden eines Zielmaterials auf ein empfindliches Material
EP2910664B1 (de) 2014-02-21 2019-04-03 Solmates B.V. Vorrichtung zur abscheidung eines materials durch gepulste laserabscheidung sowie gepulstes laserverfahren zur abscheidung eines materials mit der vorrichtung
EP3540090A1 (de) 2018-03-12 2019-09-18 Solmates B.V. Verfahren zur gepulsten laserabscheidung

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
JPH01319673A (ja) * 1988-06-21 1989-12-25 Furukawa Electric Co Ltd:The レーザビームスパッタ法
DE3914476C1 (de) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
JPH03104861A (ja) * 1989-05-26 1991-05-01 Rockwell Internatl Corp レーザアブレーションに使用するための装置
JP3110473B2 (ja) * 1990-03-01 2000-11-20 住友電気工業株式会社 酸化物超電導薄膜の製造方法
US5578350A (en) * 1990-07-03 1996-11-26 Fraunhofer-Gesellschaft Method for depositing a thin layer on a substrate by laser pulse vapor deposition
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
JPH0770740A (ja) * 1993-09-01 1995-03-14 Hitachi Zosen Corp 導電性薄膜の形成方法
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
KR0153568B1 (ko) * 1994-12-31 1998-12-01 임효빈 펄스레이저를 이용한 대면적 박막의 제조 장치 및 방법
AUPO912797A0 (en) * 1997-09-11 1997-10-02 Australian National University, The Ultrafast laser deposition method
US6297138B1 (en) * 1998-01-12 2001-10-02 Ford Global Technologies, Inc. Method of depositing a metal film onto MOS sensors
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
WO2000022184A1 (en) * 1998-10-12 2000-04-20 The Regents Of The University Of California Laser deposition of thin films
JP4621333B2 (ja) * 2000-06-01 2011-01-26 ホーチキ株式会社 薄膜形成方法
AUPR026100A0 (en) * 2000-09-20 2000-10-12 Tamanyan, Astghik Deposition of thin films by laser ablation
US6761986B2 (en) * 2001-04-06 2004-07-13 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor
US20030129324A1 (en) * 2001-09-07 2003-07-10 The Regents Of The University Of California Synthesis of films and particles of organic molecules by laser ablation
AU2003235235B2 (en) * 2002-04-26 2007-10-25 Sumitomo Electric Industries, Ltd. Process for producing oxide superconductive thin-film
JP2004068100A (ja) * 2002-08-07 2004-03-04 Shimadzu Corp イオンビーム成膜装置
JP4464650B2 (ja) * 2003-10-01 2010-05-19 富士通株式会社 レーザ蒸着装置
US7557511B2 (en) * 2005-08-01 2009-07-07 Neocera, Llc Apparatus and method utilizing high power density electron beam for generating pulsed stream of ablation plasma
EP2137336B1 (de) * 2007-02-23 2014-04-02 Picodeon Ltd Oy Verfahren zur photonenablation eines targets sowie verfahren zur beschichtung
US7869112B2 (en) * 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
EP2204468B1 (de) * 2009-01-06 2012-10-17 Solmates B.V. Vorrichtung zur Bildprojektion auf einer Oberfläche und Vorrichtung zur Verschiebung des Bildes
EP2243855B1 (de) * 2009-04-22 2021-03-03 Solmates B.V. Gepulstes Laserstrahlverdampfen mit austauschbaren Lochmasken

Also Published As

Publication number Publication date
WO2010023174A1 (en) 2010-03-04
EP2159300B1 (de) 2011-12-14
CN102131952A (zh) 2011-07-20
CN102131952B (zh) 2013-04-17
KR101307592B1 (ko) 2013-09-12
JP2012500901A (ja) 2012-01-12
JP5193368B2 (ja) 2013-05-08
SI2159300T1 (sl) 2012-05-31
EP2159300A1 (de) 2010-03-03
US20110236601A1 (en) 2011-09-29
US9074282B2 (en) 2015-07-07
HRP20120120T1 (hr) 2012-05-31
PT2159300E (pt) 2012-03-08
KR20130054465A (ko) 2013-05-24
DK2159300T3 (da) 2012-02-27
PL2159300T3 (pl) 2012-06-29
ES2378906T3 (es) 2012-04-19
KR20110047249A (ko) 2011-05-06

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