JP5190063B2 - 透明導電性酸化物層をエッチングするための印刷可能な媒体 - Google Patents
透明導電性酸化物層をエッチングするための印刷可能な媒体 Download PDFInfo
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- JP5190063B2 JP5190063B2 JP2009534999A JP2009534999A JP5190063B2 JP 5190063 B2 JP5190063 B2 JP 5190063B2 JP 2009534999 A JP2009534999 A JP 2009534999A JP 2009534999 A JP2009534999 A JP 2009534999A JP 5190063 B2 JP5190063 B2 JP 5190063B2
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Description
従来技術および発明の目的
太陽電池の製造プロセスにおいては、とりわけ、支持材上に酸化物層を構築することが必要である。結晶シリコン太陽電池は、通常p導電性基板からなり、その表面にn導電性物質、例えば燐の層を均一厚さに拡散させる。光入射時に生成した電流を遠方に導くために、金属の導電性接点をウェーハの表面および裏面に取り付ける。大量生産に適した安価な生産方式を目的として、これらの接点は通常スクリーン印刷によって作製する。
− APCVD(大気圧CVD)
− PE−CVD(プラズマ強化CVD)
− LP−CVD(低圧CVD)
これらのプロセスの共通の特徴は、揮発性前駆体、例えば二酸化シリコンの場合はシラン(SiH4)またはTEOS(テトラエチルオルソシリケート)の気相から、目標基板上にこれらの前駆体を蒸着させると共に分解させることにより所望の無機化合物を得ることである。
ガラスの定義:
ガラスは、それ自体均一な組成物、例えば石英、窓ガラス、ホウケイ酸ガラスを意味するが、当業者に公知の様々な方法(とりわけ、CVD、PVD、スピンオン、熱酸化)で他の基板(例えば、セラミックス、金属板、シリコンウェーハ)上に製造されたこれらの材料の薄層も意味する。
酸化シリコンおよび窒化シリコンをベースとした系の定義:
酸化シリコンをベースとした系は、上述の無定形SiO2ガラスの定義に入らず、二酸化シリコンをベースとしたすべての結晶系として以下に定義される。これらは、特に、オルトケイ酸塩およびエステルならびにその縮合物(一般に、当業者がケイ酸塩と呼ぶもの)であってもよく、石英およびガラスセラミックであってもよい。
構造のエッチング
エッチング液、すなわち化学的浸食性化合物を使用することにより、エッチング液の浸食にさらされた材料は溶解することになる。ほとんどの場合、目的はエッチングすべき層を完全に除去することである。エッチングの目的は、エッチング液に実質的に耐性のある層との遭遇により達成される。さらに、通常定めた目標厚さまでエッチングすることにより層を部分的に除去するという当業者に知られたプロセスがある。
現行の最先端技術によれば、いかなる所望の構造も、酸化シリコンおよび窒化シリコンをベースとしたガラスならびに酸化シリコンおよび窒化シリコンをベースとしたその他の系またはその表面およびその様々な厚さの層に、直接レーザー支援エッチング法で、またはマスキング後に湿式化学的方法([1] D.J. Monk, D.S. Soane, R.T. Howe, Thin Solid Films 232 (1993年), 1; [2]J. Buehler, F.−P. Steiner, H. Baltes, J. Micromech. Microeng. 7 (1997年), RI)で、または乾式エッチング法([3] M. Koehler “Aetz
verfahren fuer die Mikrotechnik”, Wiley
VCH 1983年)で選択的にエッチングすることができる。
A.例えばフォトリソグラフィでエッチングしない領域をマスキングするステップ:
・フォトリソグラフィ:エッチング構造のネガまたはポジ(レジストに応じて)の製造、基板表面の被覆(例えば、液体フォトレジストを用いたスピンコーティングで)、フォトレジストの乾燥、被覆した基板表面の露光、現像、水洗、任意選択で乾燥
B.以下の方法で構造をエッチングするステップ:
・浸漬法(例えば湿式化学ベンチでのウェットエッチング):エッチング浴への基板の浸漬、エッチング作業、H2Oカスケードシンク(cascade sinks)での繰返し水洗、乾燥
・スピンオンまたはスプレー法:回転基板にエッチング液を塗布する。エッチング作業はエネルギー(例えばIRまたはUV照射)を入力しないで、または入力して行うことができる。その後、水洗および乾燥する。
・ドライエッチング法、例えば、高価な真空装置中でのプラズマエッチング、または流通反応装置中での反応ガスを用いたエッチングなど
C.フォトレジストの除去:
最終プロセスステップにおいて、基板の保護領域を覆うフォトレジストを除去しなければならない。これは、例えばアセトンなどの溶媒または希アルカリ性水溶液で行うことができる。基板は最終的に水洗し乾燥する。
酸化シリコンおよび窒化シリコンをベースとしたガラスならびに酸化シリコンおよび窒化シリコンをベースとしたその他の系およびその様々な厚さの層を、全領域にわたってまたは単に所定の深さまでエッチングするには、ウェットエッチング法が主に使用される。酸化シリコンおよび窒化シリコンをベースとしたガラスならびに酸化シリコンおよび窒化シリコンをベースとしたその他の系およびその様々な厚さの層をエッチング浴に浸漬する。エッチング浴には、通常、毒性を有し、腐食性の高いフッ化水素酸および任意選択でその他の鉱酸からなる添加剤が入っている。
目的
したがって、本発明の目的は、幅100μm未満、特に80μm未満の非常に均一な細いラインおよび超微細構造を、シリコン太陽電池上にある、二酸化シリコンおよび/またはシリコン窒化物層上に、特に導電層にも、エッチングするための新規・安価なエッチングペーストを提供することである。本発明の他の目的は、残留物を残すことなく簡単な方法で、エッチング後に処理表面から除去することができる、公知のペーストより環境にやさしい特性を有する新規なエッチング媒体を提供することである。
この目的は、透明導電性酸化物の面および層をエッチングするための、エッチングペーストの形態の新規な印刷可能で分配可能なエッチング媒体であって、
a)リン酸と、
b)少なくとも1種の溶媒と、
c)80nm〜20nmの範囲の相対的な粒径および40〜100m2/gの範囲のBET比表面積を有する黒鉛および/またはカーボンブラックと、
d)任意選択で増粘剤と、
e)任意選択で、消泡剤、チキソトロープ剤、流れ調整剤、脱泡剤および接着促進剤などの添加剤と
を含むエッチング媒体によって達成される。
発明の説明
この新規ペースト配合物は、表面洗浄、印刷精度、およびエッチング作業後の廃水汚染に関して著しく改善された特性を有する。このエッチングペーストには非常に細かい微粒子状の無機粉体、特に、微細な黒鉛および/またはカーボンブラックの微粒子が添加されているが、これを温度120〜170℃でITOのエッチングに使用すると、市販の黒鉛またはカーボンブラックを加えたペーストと比較して、驚いたことに、その洗浄特性が改善されていることが分かった。処理された表面はその後脱イオン化水で洗浄する。
BYK(登録商標)410、Borchigel(登録商標)Thixo2などのチキソトロープ剤、
TEGO(登録商標)Glide ZG400などの流れ調整剤、
TEGO(登録商標)Airex 985などの脱泡剤、および
Bayowet(登録商標)FT 929などの接着促進剤である。
網目数:鋼織物 350メッシュ/インチ
フィラメント直径:16μm
乳剤厚さ:10μm
印刷中の網離隔距離:75μm
図1〜図4は、種々の厚さのラインを印刷した製造物のエッチング結果を示す。さらに、これらの図から、フォトレジスト層を使用することなく、本発明によるペーストを使用して、離隔距離が100μm未満のラインをエッチングできることが分かる。したがって、本発明によるエッチングペーストを使用して、簡単なやり方で、高解像度のエッチング構造を作ることが可能である。
実施例1
無機ナノ微粒子固体添加剤を含むエッチングペースト
脱イオン化水218g
1−メチル−2−ピロリドン223g
エチレングリコール1.6g
この溶剤混合物に、かき混ぜながら以下を連続的に加える。
リン酸(85%)465gおよび
ポリビニルピロリドン11g
ただし、ポリビニルピロリドンは激しくかき混ぜながら加える。
次いで、この透明な均一混合物にカーボンブラック50gを加え、さらに2時間かき混ぜる。
Claims (8)
- エッチングペーストの形態の、透明導電性酸化物の面および層をエッチングするための、印刷可能で分配可能なエッチング媒体であって、
a)リン酸と、
b)少なくとも1種の溶媒と、
c)20nm〜80nmの範囲の相対的な粒径および40〜100m2/gの範囲のBET比表面積を有する黒鉛および/またはカーボンブラックと、
を含むエッチング媒体。 - 50nm未満の相対的な粒径および50〜70m2/gの範囲のBET比表面積を有する黒鉛またはカーボンブラック粉末を含む、請求項1に記載のエッチング媒体。
- 30nm〜45nmの範囲の相対的な粒径を有する黒鉛またはカーボンブラック粉末を含む、請求項1に記載のエッチング媒体。
- 相対的な粒径が40nmであり、BET比表面積が62m2/gであるカーボンブラック粉末を含む、請求項1に記載のエッチング媒体。
- 8重量%未満であるが0.5重量%を超える量の黒鉛またはカーボンブラック粉末を含む、請求項1から4の一項に記載のエッチング媒体。
- 3〜7重量%の量の黒鉛またはカーボンブラック粉末を含み、25〜35Pasの範囲の粘度を有する、請求項1から4の一項に記載のエッチング媒体。
- 半導体製造中に透明導電性酸化物層をエッチングするための、請求項1から6の一項に記載のエッチング媒体の使用。
- 温度120〜170℃でITOをエッチングするための、請求項1から6の一項に記載のエッチング媒体の使用。
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DE102006051735A DE102006051735A1 (de) | 2006-10-30 | 2006-10-30 | Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten |
PCT/EP2007/008663 WO2008052637A1 (de) | 2006-10-30 | 2007-10-05 | Druckfähiges medium zum ätzen von oxidischen, transparenten und leitfähigen schichten |
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JP7443576B2 (ja) | 2021-01-25 | 2024-03-05 | 株式会社東芝 | 高速投入器 |
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CN101600779A (zh) | 2009-12-09 |
TWI425079B (zh) | 2014-02-01 |
HK1136004A1 (en) | 2010-06-18 |
KR20090087016A (ko) | 2009-08-14 |
CN101600779B (zh) | 2013-06-26 |
MY149959A (en) | 2013-11-15 |
EP2089491B1 (de) | 2013-04-10 |
US20100068890A1 (en) | 2010-03-18 |
US8795549B2 (en) | 2014-08-05 |
TW200827431A (en) | 2008-07-01 |
ES2416310T3 (es) | 2013-07-31 |
DE102006051735A1 (de) | 2008-05-08 |
EP2089491A1 (de) | 2009-08-19 |
KR101465276B1 (ko) | 2014-11-26 |
PL2089491T3 (pl) | 2013-08-30 |
WO2008052637A1 (de) | 2008-05-08 |
JP2010508664A (ja) | 2010-03-18 |
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