HK1136004A1 - Printable medium for etching of oxidic, transparent and conducting layers - Google Patents
Printable medium for etching of oxidic, transparent and conducting layersInfo
- Publication number
- HK1136004A1 HK1136004A1 HK10100218.4A HK10100218A HK1136004A1 HK 1136004 A1 HK1136004 A1 HK 1136004A1 HK 10100218 A HK10100218 A HK 10100218A HK 1136004 A1 HK1136004 A1 HK 1136004A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- oxidic
- etching
- transparent
- conducting layers
- printable medium
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006051735A DE102006051735A1 (de) | 2006-10-30 | 2006-10-30 | Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten |
PCT/EP2007/008663 WO2008052637A1 (de) | 2006-10-30 | 2007-10-05 | Druckfähiges medium zum ätzen von oxidischen, transparenten und leitfähigen schichten |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1136004A1 true HK1136004A1 (en) | 2010-06-18 |
Family
ID=38984085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK10100218.4A HK1136004A1 (en) | 2006-10-30 | 2010-01-08 | Printable medium for etching of oxidic, transparent and conducting layers |
Country Status (12)
Country | Link |
---|---|
US (1) | US8795549B2 (ja) |
EP (1) | EP2089491B1 (ja) |
JP (1) | JP5190063B2 (ja) |
KR (1) | KR101465276B1 (ja) |
CN (1) | CN101600779B (ja) |
DE (1) | DE102006051735A1 (ja) |
ES (1) | ES2416310T3 (ja) |
HK (1) | HK1136004A1 (ja) |
MY (1) | MY149959A (ja) |
PL (1) | PL2089491T3 (ja) |
TW (1) | TWI425079B (ja) |
WO (1) | WO2008052637A1 (ja) |
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TW201040299A (en) * | 2009-05-05 | 2010-11-16 | Fraunhofer Ges Forschung | Layer system having barrier properties and a structured conductive layer, method for producing the same, and use of such a layer system |
CN101958361A (zh) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | 透光薄膜太阳电池组件刻蚀方法 |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
CN102097536B (zh) * | 2009-12-11 | 2012-12-12 | 杜邦太阳能有限公司 | 制造一体化光伏模块的方法 |
US8524524B2 (en) | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
US9214576B2 (en) * | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
EP2596081A1 (en) * | 2010-06-14 | 2013-05-29 | Merck Patent GmbH | Cross-linking and multi-phase etch pastes for high resolution feature patterning |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
WO2012083082A1 (en) | 2010-12-15 | 2012-06-21 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
KR20140058563A (ko) * | 2011-07-18 | 2014-05-14 | 메르크 파텐트 게엠베하 | 대전방지 및 반사방지 코팅들 그리고 대응하는 적층된 층들의 구조화 |
CN102603211B (zh) * | 2012-01-12 | 2013-10-30 | 福耀玻璃工业集团股份有限公司 | 一种在玻璃上制作标识的方法 |
WO2014055781A1 (en) | 2012-10-04 | 2014-04-10 | Silevo, Inc. | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
JP6136186B2 (ja) * | 2012-10-16 | 2017-05-31 | 日立化成株式会社 | 液状組成物 |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
CN103508677A (zh) * | 2013-09-24 | 2014-01-15 | 苏州诺维克光伏新材料有限公司 | 一种膏体材料及其应用 |
CN103980905B (zh) * | 2014-05-07 | 2017-04-05 | 佛山市中山大学研究院 | 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用 |
US9324899B2 (en) | 2014-06-09 | 2016-04-26 | Natcore Technology, Inc. | Emitter diffusion conditions for black silicon |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
JP6359394B2 (ja) * | 2014-09-18 | 2018-07-18 | 国立研究開発法人産業技術総合研究所 | 半導体装置とその製造方法 |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
KR101629852B1 (ko) | 2015-03-23 | 2016-06-14 | 주식회사 해나라 | 휠 가드 제조 시스템 |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
CN106280680A (zh) * | 2016-08-09 | 2017-01-04 | 上海交通大学 | 一种水溶性含磷油墨及其制备方法 |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
TWI776196B (zh) * | 2020-07-29 | 2022-09-01 | 國立虎尾科技大學 | 低溫製造微型發電機的製程方法 |
JP7443576B2 (ja) | 2021-01-25 | 2024-03-05 | 株式会社東芝 | 高速投入器 |
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FR2583916B1 (fr) * | 1985-06-25 | 1990-01-12 | Europ Composants Electron | Cellule pour condensateur a double couche electrique et procede de fabrication d'une telle cellule |
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US5688366A (en) | 1994-04-28 | 1997-11-18 | Canon Kabushiki Kaisha | Etching method, method of producing a semiconductor device, and etchant therefor |
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DE102004016766A1 (de) * | 2004-04-01 | 2005-10-20 | Degussa | Nanoskalige Siliziumpartikel in negativen Elektrodenmaterialien für Lithium-Ionen-Batterien |
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DE102005031469A1 (de) * | 2005-07-04 | 2007-01-11 | Merck Patent Gmbh | Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten |
DE102005033724A1 (de) * | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
DE102005035255A1 (de) * | 2005-07-25 | 2007-02-01 | Merck Patent Gmbh | Ätzmedien für oxidische, transparente, leitfähige Schichten |
US7494744B2 (en) * | 2006-03-08 | 2009-02-24 | Changs-Ascending Enterprise Co. | Cathode material for Li-ion battery applications |
EP2001656B1 (en) * | 2006-04-06 | 2014-10-15 | 3D Systems Incorporated | KiT FOR THE PRODUCTION OF THREE-DIMENSIONAL OBJECTS BY USE OF ELECTROMAGNETIC RADIATION |
US8158071B2 (en) * | 2006-04-29 | 2012-04-17 | Chun-Chieh Chang | Method and devices for producing air sensitive electrode materials for lithium ion battery applications |
DE102006051952A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
US20090035661A1 (en) * | 2007-08-01 | 2009-02-05 | Jeffrey Swoyer | Synthesis of cathode active materials |
-
2006
- 2006-10-30 DE DE102006051735A patent/DE102006051735A1/de not_active Withdrawn
-
2007
- 2007-10-05 KR KR1020097010962A patent/KR101465276B1/ko not_active IP Right Cessation
- 2007-10-05 EP EP07818739.0A patent/EP2089491B1/de not_active Not-in-force
- 2007-10-05 US US12/447,763 patent/US8795549B2/en not_active Expired - Fee Related
- 2007-10-05 JP JP2009534999A patent/JP5190063B2/ja not_active Expired - Fee Related
- 2007-10-05 PL PL07818739T patent/PL2089491T3/pl unknown
- 2007-10-05 MY MYPI20091714A patent/MY149959A/en unknown
- 2007-10-05 WO PCT/EP2007/008663 patent/WO2008052637A1/de active Application Filing
- 2007-10-05 CN CN2007800404944A patent/CN101600779B/zh not_active Expired - Fee Related
- 2007-10-05 ES ES07818739T patent/ES2416310T3/es active Active
- 2007-10-26 TW TW096140455A patent/TWI425079B/zh not_active IP Right Cessation
-
2010
- 2010-01-08 HK HK10100218.4A patent/HK1136004A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ES2416310T3 (es) | 2013-07-31 |
US20100068890A1 (en) | 2010-03-18 |
US8795549B2 (en) | 2014-08-05 |
MY149959A (en) | 2013-11-15 |
CN101600779A (zh) | 2009-12-09 |
KR101465276B1 (ko) | 2014-11-26 |
TWI425079B (zh) | 2014-02-01 |
JP5190063B2 (ja) | 2013-04-24 |
EP2089491A1 (de) | 2009-08-19 |
KR20090087016A (ko) | 2009-08-14 |
WO2008052637A1 (de) | 2008-05-08 |
JP2010508664A (ja) | 2010-03-18 |
EP2089491B1 (de) | 2013-04-10 |
DE102006051735A1 (de) | 2008-05-08 |
TW200827431A (en) | 2008-07-01 |
PL2089491T3 (pl) | 2013-08-30 |
CN101600779B (zh) | 2013-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20171005 |