PL2089491T3 - Drukowalny środek do trawienia tlenkowych, przezroczystych i przewodzących warstw - Google Patents

Drukowalny środek do trawienia tlenkowych, przezroczystych i przewodzących warstw

Info

Publication number
PL2089491T3
PL2089491T3 PL07818739T PL07818739T PL2089491T3 PL 2089491 T3 PL2089491 T3 PL 2089491T3 PL 07818739 T PL07818739 T PL 07818739T PL 07818739 T PL07818739 T PL 07818739T PL 2089491 T3 PL2089491 T3 PL 2089491T3
Authority
PL
Poland
Prior art keywords
transparent
oxide
conductive layers
etching agent
printable etching
Prior art date
Application number
PL07818739T
Other languages
English (en)
Inventor
Werner Stockum
Armin Kuebelbeck
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of PL2089491T3 publication Critical patent/PL2089491T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
PL07818739T 2006-10-30 2007-10-05 Drukowalny środek do trawienia tlenkowych, przezroczystych i przewodzących warstw PL2089491T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006051735A DE102006051735A1 (de) 2006-10-30 2006-10-30 Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
EP07818739.0A EP2089491B1 (de) 2006-10-30 2007-10-05 Druckfähiges medium zum ätzen von oxidischen, transparenten und leitfähigen schichten
PCT/EP2007/008663 WO2008052637A1 (de) 2006-10-30 2007-10-05 Druckfähiges medium zum ätzen von oxidischen, transparenten und leitfähigen schichten

Publications (1)

Publication Number Publication Date
PL2089491T3 true PL2089491T3 (pl) 2013-08-30

Family

ID=38984085

Family Applications (1)

Application Number Title Priority Date Filing Date
PL07818739T PL2089491T3 (pl) 2006-10-30 2007-10-05 Drukowalny środek do trawienia tlenkowych, przezroczystych i przewodzących warstw

Country Status (11)

Country Link
US (1) US8795549B2 (pl)
EP (1) EP2089491B1 (pl)
JP (1) JP5190063B2 (pl)
KR (1) KR101465276B1 (pl)
CN (1) CN101600779B (pl)
DE (1) DE102006051735A1 (pl)
ES (1) ES2416310T3 (pl)
MY (1) MY149959A (pl)
PL (1) PL2089491T3 (pl)
TW (1) TWI425079B (pl)
WO (1) WO2008052637A1 (pl)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200939509A (en) * 2007-11-19 2009-09-16 Applied Materials Inc Crystalline solar cell metallization methods
CN101889348B (zh) * 2007-11-19 2013-03-27 应用材料公司 使用图案化蚀刻剂物质以形成太阳能电池接点的工艺
TW201040299A (en) * 2009-05-05 2010-11-16 Fraunhofer Ges Forschung Layer system having barrier properties and a structured conductive layer, method for producing the same, and use of such a layer system
CN101958361A (zh) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 透光薄膜太阳电池组件刻蚀方法
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
CN102097536B (zh) * 2009-12-11 2012-12-12 杜邦太阳能有限公司 制造一体化光伏模块的方法
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US20130092657A1 (en) * 2010-06-14 2013-04-18 Nano Terra, Inc. Cross-linking and multi-phase etch pastes for high resolution feature patterning
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
EP2651841A1 (en) 2010-12-15 2013-10-23 Sun Chemical Corporation Printable etchant compositions for etching silver nanowire-based transparent, conductive films
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
EP2735216A1 (de) * 2011-07-18 2014-05-28 Merck Patent GmbH Strukturierung von antistatischen und antireflektionsbeschichtungen und von entsprechenden stapelschichten
CN102603211B (zh) * 2012-01-12 2013-10-30 福耀玻璃工业集团股份有限公司 一种在玻璃上制作标识的方法
JP6351601B2 (ja) 2012-10-04 2018-07-04 ソーラーシティ コーポレーション 電気めっき金属グリッドを用いた光起電力装置
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
JP6136186B2 (ja) * 2012-10-16 2017-05-31 日立化成株式会社 液状組成物
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
CN103508677A (zh) * 2013-09-24 2014-01-15 苏州诺维克光伏新材料有限公司 一种膏体材料及其应用
CN103980905B (zh) * 2014-05-07 2017-04-05 佛山市中山大学研究院 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用
WO2015191520A1 (en) * 2014-06-09 2015-12-17 Natcore Technology, Inc. Emitter diffusion conditions for black silicon
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
JP6359394B2 (ja) * 2014-09-18 2018-07-18 国立研究開発法人産業技術総合研究所 半導体装置とその製造方法
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
KR101629852B1 (ko) 2015-03-23 2016-06-14 주식회사 해나라 휠 가드 제조 시스템
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
CN106280680A (zh) * 2016-08-09 2017-01-04 上海交通大学 一种水溶性含磷油墨及其制备方法
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
TWI776196B (zh) * 2020-07-29 2022-09-01 國立虎尾科技大學 低溫製造微型發電機的製程方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904443A (en) * 1973-03-02 1975-09-09 Boeing Co High temperature lubricant
DE2929589A1 (de) * 1979-07-04 1981-01-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines optisch transparenten und elektrisch leitfaehigen filmmusters
FR2583916B1 (fr) * 1985-06-25 1990-01-12 Europ Composants Electron Cellule pour condensateur a double couche electrique et procede de fabrication d'une telle cellule
JPH01147078A (ja) * 1987-12-02 1989-06-08 Ricoh Co Ltd 透明電極パターン形成用エッチングインキ組成物及びその使用方法
US5688366A (en) 1994-04-28 1997-11-18 Canon Kabushiki Kaisha Etching method, method of producing a semiconductor device, and etchant therefor
JP3173318B2 (ja) * 1994-04-28 2001-06-04 キヤノン株式会社 エッチング方法及び半導体素子の製造方法
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
WO2001083391A1 (de) 2000-04-28 2001-11-08 Merck Patent Gmbh Ätzpasten für anorganische oberflächen
DE10150040A1 (de) 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
DE10239656A1 (de) * 2002-08-26 2004-03-11 Merck Patent Gmbh Ätzpasten für Titanoxid-Oberflächen
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
US20040112868A1 (en) * 2002-12-13 2004-06-17 Phipps Peter Beverley Powell Etchant solution for removing a thin metallic layer
WO2005013394A1 (en) * 2003-08-01 2005-02-10 Avestor Limited Partnership Cathode material for polymer batteries and method of preparing same
DE102004016766A1 (de) * 2004-04-01 2005-10-20 Degussa Nanoskalige Siliziumpartikel in negativen Elektrodenmaterialien für Lithium-Ionen-Batterien
JP2006086069A (ja) * 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
DE102005007743A1 (de) * 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
JP4887664B2 (ja) * 2005-05-17 2012-02-29 ソニー株式会社 多孔質構造体の製造方法及び光電変換素子の製造方法
DE102005031469A1 (de) * 2005-07-04 2007-01-11 Merck Patent Gmbh Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
DE102005033724A1 (de) * 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
DE102005035255A1 (de) * 2005-07-25 2007-02-01 Merck Patent Gmbh Ätzmedien für oxidische, transparente, leitfähige Schichten
US7494744B2 (en) * 2006-03-08 2009-02-24 Changs-Ascending Enterprise Co. Cathode material for Li-ion battery applications
US20070241482A1 (en) * 2006-04-06 2007-10-18 Z Corporation Production of three-dimensional objects by use of electromagnetic radiation
US8158071B2 (en) * 2006-04-29 2012-04-17 Chun-Chieh Chang Method and devices for producing air sensitive electrode materials for lithium ion battery applications
DE102006051952A1 (de) * 2006-11-01 2008-05-08 Merck Patent Gmbh Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
US20090035661A1 (en) * 2007-08-01 2009-02-05 Jeffrey Swoyer Synthesis of cathode active materials

Also Published As

Publication number Publication date
TWI425079B (zh) 2014-02-01
TW200827431A (en) 2008-07-01
EP2089491B1 (de) 2013-04-10
CN101600779A (zh) 2009-12-09
JP2010508664A (ja) 2010-03-18
KR20090087016A (ko) 2009-08-14
JP5190063B2 (ja) 2013-04-24
EP2089491A1 (de) 2009-08-19
MY149959A (en) 2013-11-15
CN101600779B (zh) 2013-06-26
US8795549B2 (en) 2014-08-05
HK1136004A1 (en) 2010-06-18
DE102006051735A1 (de) 2008-05-08
US20100068890A1 (en) 2010-03-18
KR101465276B1 (ko) 2014-11-26
ES2416310T3 (es) 2013-07-31
WO2008052637A1 (de) 2008-05-08

Similar Documents

Publication Publication Date Title
PL2089491T3 (pl) Drukowalny środek do trawienia tlenkowych, przezroczystych i przewodzących warstw
BRPI0716746A2 (pt) eletrodo e substrato transparentes.
EP1982339A4 (en) MULTI-MAGNETIC RESIDUAL CIRCUIT ARRANGEMENTS BASED ON DOTED MAGNESIUM OXIDE
EP2061040A4 (en) CONDUCTIVE FILM
PL2143046T3 (pl) Karta procesorowa, sposób i układ do wytwarzania karty procesorowej
CL2007001563S1 (es) Botella.
BRPI0721636A2 (pt) Representação e matéria impressa com informações.
EP2160235A4 (en) DISCONTINUOUS ATMOSPHERIC PRESSURE INTERFACE
CL2007001562S1 (es) Botella.
CL2007001564S1 (es) Botella.
CL2006003378S1 (es) Botella.
FR2899996B1 (fr) Disjoncteur.
CL2007001566S1 (es) Botella.
DE602007002593D1 (de) Tintenstift
EP2019910A4 (en) THERMAL MAGNETIC ACTUATOR
SE0702067L (sv) Bestick
CL2007001565S1 (es) Botella.
CL2006003376S1 (es) Botella.
FI20060441A0 (fi) Hissijärjestely
CL2007000545S1 (es) Botella.
DE502006009008D1 (de) Kühlmittelkreislauf
FI20060440A0 (fi) Hissijärjestelmä
DE602007012519D1 (de) Integrierte Schaltung mit beschränktem Datenzugang
FI20070364A0 (fi) Nostolaite
EP2071555A4 (en) ACTIVE MATRIX SUBSTRATE