JP5188021B2 - ハンダ膜及びその形成方法 - Google Patents

ハンダ膜及びその形成方法 Download PDF

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Publication number
JP5188021B2
JP5188021B2 JP2005362924A JP2005362924A JP5188021B2 JP 5188021 B2 JP5188021 B2 JP 5188021B2 JP 2005362924 A JP2005362924 A JP 2005362924A JP 2005362924 A JP2005362924 A JP 2005362924A JP 5188021 B2 JP5188021 B2 JP 5188021B2
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JP
Japan
Prior art keywords
alloy
substrate
solder film
solder
ausn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005362924A
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English (en)
Japanese (ja)
Other versions
JP2007162107A (ja
JP2007162107A5 (enExample
Inventor
元樹 小畑
功 水間
良彦 堀金
純二 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Finetech Miyota Co Ltd
Original Assignee
Citizen Finetech Miyota Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Finetech Miyota Co Ltd filed Critical Citizen Finetech Miyota Co Ltd
Priority to JP2005362924A priority Critical patent/JP5188021B2/ja
Publication of JP2007162107A publication Critical patent/JP2007162107A/ja
Publication of JP2007162107A5 publication Critical patent/JP2007162107A5/ja
Application granted granted Critical
Publication of JP5188021B2 publication Critical patent/JP5188021B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Die Bonding (AREA)
  • Physical Vapour Deposition (AREA)
JP2005362924A 2005-12-16 2005-12-16 ハンダ膜及びその形成方法 Expired - Lifetime JP5188021B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005362924A JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005362924A JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Publications (3)

Publication Number Publication Date
JP2007162107A JP2007162107A (ja) 2007-06-28
JP2007162107A5 JP2007162107A5 (enExample) 2009-02-12
JP5188021B2 true JP5188021B2 (ja) 2013-04-24

Family

ID=38245355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005362924A Expired - Lifetime JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Country Status (1)

Country Link
JP (1) JP5188021B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010261094A (ja) * 2009-05-11 2010-11-18 Mitsubishi Materials Corp Ａｕ−Ｓｎ合金蒸着用粒状材およびその製造方法
JP2010275577A (ja) * 2009-05-27 2010-12-09 Ulvac Japan Ltd 成膜方法
JP6070927B2 (ja) * 2012-09-12 2017-02-01 三菱マテリアル株式会社 Ａｕ−Ｓｎ合金含有ペースト、Ａｕ−Ｓｎ合金薄膜及びその成膜方法
CN103290251A (zh) * 2013-05-17 2013-09-11 江西理工大学 一种金锡箔带材钎料的制备方法
CN104294218B (zh) * 2014-10-23 2016-06-08 中国科学院上海光学精密机械研究所 金锡薄膜的制备装置和方法
JP6720515B2 (ja) * 2015-12-04 2020-07-08 三菱マテリアル株式会社 Ａｕ−Ｓｎはんだ粉末及びこの粉末を含むはんだ用ペースト
CN117107199A (zh) * 2023-08-31 2023-11-24 安徽光智科技有限公司 晶圆级封装中电子束蒸发沉积焊料的工艺以及晶圆级封装工艺

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838485A (enExample) * 1971-09-20 1973-06-06
DE3276333D1 (en) * 1982-10-28 1987-06-19 Ibm Method and apparatus for vacuum evaporation coating using an electron gun
JPH02145765A (ja) * 1988-11-25 1990-06-05 Hitachi Ltd 膜厚モニタおよびこれを用いた蒸着装置
JPH09115835A (ja) * 1995-10-23 1997-05-02 Sony Corp ウエハ処理装置
JPH09283909A (ja) * 1996-04-19 1997-10-31 Hitachi Ltd 電子回路装置およびその製造方法
JP3303227B2 (ja) * 1996-06-13 2002-07-15 日本航空電子工業株式会社 ＡｕＳｎ多層ハンダ
JP2002224882A (ja) * 2001-01-29 2002-08-13 Hitachi Metals Ltd Ａｕ／Ｓｎ複合箔及びＡｕ／Ｓｎ合金箔並びにそれを用いてなるロウ材、Ａｕ／Ｓｎ複合箔の製造方法及びＡｕ／Ｓｎ合金箔の製造方法、ロウ材の接合方法
JP4208083B2 (ja) * 2004-09-16 2009-01-14 シチズンファインテックミヨタ株式会社 Ａｕ−Ｓｎ合金積層ハンダ及びその製造方法

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Publication number Publication date
JP2007162107A (ja) 2007-06-28

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