JP7406417B2 - 電極構造および当該電極構造を備えた接合構造体 - Google Patents
電極構造および当該電極構造を備えた接合構造体 Download PDFInfo
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- JP7406417B2 JP7406417B2 JP2020048184A JP2020048184A JP7406417B2 JP 7406417 B2 JP7406417 B2 JP 7406417B2 JP 2020048184 A JP2020048184 A JP 2020048184A JP 2020048184 A JP2020048184 A JP 2020048184A JP 7406417 B2 JP7406417 B2 JP 7406417B2
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- 230000004888 barrier function Effects 0.000 claims description 77
- 229910000679 solder Inorganic materials 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 35
- 238000005219 brazing Methods 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 8
- 239000002313 adhesive film Substances 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 description 21
- 238000002844 melting Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 15
- 239000000203 mixture Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010406 interfacial reaction Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Description
11 AlN基板
12a,12b Ti膜
13a,13b Pt膜
14a,14b Au膜
15 Ptバリア膜
16a,16b AuSnはんだ膜
Claims (5)
- 基板表面に形成される下地電極膜と、前記下地電極膜上に形成される第1拡散バリア膜と、前記第1拡散バリア膜上に形成されるろう材とを備えた電極構造であって、
前記第1拡散バリア膜は、結晶配向が無配向多結晶体で構成されたPt膜を備えることを特徴とする電極構造。 - 前記下地電極膜は、前記基板上に形成された前記基板との密着膜と、前記密着膜上に形成された第2拡散バリア膜と、前記第2拡散バリア膜上に形成された貴金属膜を備えることを特徴とする請求項1に記載の電極構造。
- 前記ろう材はSn系はんだであり、前記第1拡散バリア膜上で前記Sn系はんだを320℃で溶融した時に、前記第1拡散バリア膜のPt溶解速度が0.6nm/s以下であることを特徴とする請求項1または2に記載の電極構造。
- 基板表面に形成される下地電極膜と、前記下地電極膜上に形成される第1拡散バリア膜と、前記第1拡散バリア膜上に形成されるろう材と、前記ろう材上に接合される電子部品とを備えた接合構造体であって、
前記第1拡散バリア膜は、結晶配向が無配向多結晶体で構成されたPt膜を備えることを特徴とする接合構造体。 - 前記ろう材を複数備え、前記ろう材に接合された複数の前記電子部品を備えることを特徴とする請求項4に記載の接合構造体。
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JP2020048184A JP7406417B2 (ja) | 2020-03-18 | 2020-03-18 | 電極構造および当該電極構造を備えた接合構造体 |
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JP2020048184A JP7406417B2 (ja) | 2020-03-18 | 2020-03-18 | 電極構造および当該電極構造を備えた接合構造体 |
Publications (2)
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JP2021150464A JP2021150464A (ja) | 2021-09-27 |
JP7406417B2 true JP7406417B2 (ja) | 2023-12-27 |
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JP2020048184A Active JP7406417B2 (ja) | 2020-03-18 | 2020-03-18 | 電極構造および当該電極構造を備えた接合構造体 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124524A (ja) | 2000-10-16 | 2002-04-26 | Kyocera Corp | 配線基板 |
JP2002151629A (ja) | 2000-08-28 | 2002-05-24 | Kyocera Corp | 配線基板 |
JP2003258360A (ja) | 2002-03-06 | 2003-09-12 | Sumitomo Electric Ind Ltd | サブマウントおよび半導体装置 |
JP2014053480A (ja) | 2012-09-07 | 2014-03-20 | Ricoh Co Ltd | 圧電体薄膜素子およびその製造方法、並びにこれを用いた圧電アクチュエータ、液滴吐出ヘッド及び液滴吐出装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1197637A (ja) * | 1997-09-16 | 1999-04-09 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
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2020
- 2020-03-18 JP JP2020048184A patent/JP7406417B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151629A (ja) | 2000-08-28 | 2002-05-24 | Kyocera Corp | 配線基板 |
JP2002124524A (ja) | 2000-10-16 | 2002-04-26 | Kyocera Corp | 配線基板 |
JP2003258360A (ja) | 2002-03-06 | 2003-09-12 | Sumitomo Electric Ind Ltd | サブマウントおよび半導体装置 |
JP2014053480A (ja) | 2012-09-07 | 2014-03-20 | Ricoh Co Ltd | 圧電体薄膜素子およびその製造方法、並びにこれを用いた圧電アクチュエータ、液滴吐出ヘッド及び液滴吐出装置 |
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