JP5173142B2 - 試料作製のための反復的周状切削 - Google Patents
試料作製のための反復的周状切削 Download PDFInfo
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- JP5173142B2 JP5173142B2 JP2006045684A JP2006045684A JP5173142B2 JP 5173142 B2 JP5173142 B2 JP 5173142B2 JP 2006045684 A JP2006045684 A JP 2006045684A JP 2006045684 A JP2006045684 A JP 2006045684A JP 5173142 B2 JP5173142 B2 JP 5173142B2
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- 238000005520 cutting process Methods 0.000 title description 33
- 238000002360 preparation method Methods 0.000 title description 4
- 230000003252 repetitive effect Effects 0.000 title 1
- 238000010884 ion-beam technique Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 238000009828 non-uniform distribution Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 description 112
- 150000002500 ions Chemical class 0.000 description 24
- 239000000463 material Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910001338 liquidmetal Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
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- 229910052733 gallium Inorganic materials 0.000 description 3
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- 238000005498 polishing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
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- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 gallium ions Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 230000000979 retarding effect Effects 0.000 description 1
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- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229960001685 tacrine Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
Description
11 外被
12 ネック部分
14 イオン源
16 イオンビーム集束カラム
18 イオンビーム
19 システムコントローラ
20 偏光板
22 試料
24 XYステージ
26 下部チャンバー
28 イオンポンプ
30 ポンピングシステム
32 真空コントローラ
34 高圧電源
36 偏向コントローラおよび増幅器
38 パターン発生器
40 荷電粒子検出器
41 走査型電子顕微鏡
42 ビデオ回路
44 モニタ
45 走査型電子顕微鏡電源および制御部
46 ガス配送システム
60 扉
100 関心のある領域を位置特定
102 ビームを使って周に沿って切り込み
104 第一の切り込みに重なる第二の切り込み
106 追加的な重なり合う経路に沿った切り込み
108 試料の下を切って切り離す
110 試料にプローブを取り付け
112 集束イオンビームを使って試料を所望の形に切る
114 試料を観察
300 基板
302 第一の切り込み
402 第二の切り込み
502 溝
504 傾斜した側壁
506 試料
602 イオンビーム
604 斜めの穴
Claims (3)
- 基板から顕微鏡試料を抽出する方法であって:
基板表面に実質垂直な角度でイオンビームを、試料のまわりの実質完全な周を定義する第一の経路に沿って連続的なパスで制御して、当該基板中に、傾きのある側壁を有し抽出すべき試料より深さが小さい溝を生成し、
前記基板表面に実質垂直な角度で前記イオンビームを、前記試料のまわりの実質完全な周を定義し実質的に前記周全体に沿って前記第一の経路と重なり合うがずれているある第二の経路に沿って連続的なパスで制御して、前記試料のまわりの溝を拡大し、ここで、前記第二の経路に沿っての前記ビームの少なくとも一部は、前記側壁の一部を衝撃して前記溝を深くし、
基板に実質垂直でない角度で前記イオンビームを制御して前記試料の下を切り、前記試料を当該基板から切り離す、
ことを含むことを特徴とする方法。 - 前記基板表面に垂直なイオンビームを制御することが、第一の円形経路に沿ってイオンビームを制御することを含み、
前記イオンビームを第二の経路に沿って制御することが、第二の円形経路に沿って前記イオンビームを制御することを含み、前記第二の円形経路が前記第一の円形経路と実質的に同心である、
ことを特徴とする、請求項1記載の方法。 - 基板から試料を抽出するためのシステムであって:
基板を支持する試料ステージと、
基板上に傾きのある側壁を生成するために非一様分布をもつ、直径がマイクロメートル以下のイオンビームを生成するためのイオンビーム源と、
請求項1記載の方法を実行するために前記イオンビーム源および前記ステージを制御するようプログラムされたコントローラ、
とを有することを特徴とするシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65532705P | 2005-02-23 | 2005-02-23 | |
US60/655,327 | 2005-02-23 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012249461A Division JP5670988B2 (ja) | 2005-02-23 | 2012-11-13 | 試料作製のための反復的周状切削 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006234816A JP2006234816A (ja) | 2006-09-07 |
JP2006234816A5 JP2006234816A5 (ja) | 2009-03-05 |
JP5173142B2 true JP5173142B2 (ja) | 2013-03-27 |
Family
ID=36498943
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006045684A Active JP5173142B2 (ja) | 2005-02-23 | 2006-02-22 | 試料作製のための反復的周状切削 |
JP2012249461A Active JP5670988B2 (ja) | 2005-02-23 | 2012-11-13 | 試料作製のための反復的周状切削 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012249461A Active JP5670988B2 (ja) | 2005-02-23 | 2012-11-13 | 試料作製のための反復的周状切削 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7442924B2 (ja) |
EP (1) | EP1696219B1 (ja) |
JP (2) | JP5173142B2 (ja) |
DE (1) | DE602006000278T2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8553188B2 (en) | 1997-06-12 | 2013-10-08 | Sharp Kabushiki Kaisha | Liquid crystal display device |
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US7786451B2 (en) | 2003-10-16 | 2010-08-31 | Alis Corporation | Ion sources, systems and methods |
US8110814B2 (en) | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
US9159527B2 (en) | 2003-10-16 | 2015-10-13 | Carl Zeiss Microscopy, Llc | Systems and methods for a gas field ionization source |
US7786452B2 (en) | 2003-10-16 | 2010-08-31 | Alis Corporation | Ion sources, systems and methods |
US7511282B2 (en) * | 2006-05-25 | 2009-03-31 | Fei Company | Sample preparation |
US7644637B2 (en) * | 2006-09-25 | 2010-01-12 | Omniprobe, Inc. | Method and apparatus for transfer of samples in a controlled environment |
WO2008051880A2 (en) * | 2006-10-20 | 2008-05-02 | Fei Company | Method and apparatus for sample extraction and handling |
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US7842920B2 (en) * | 2006-12-14 | 2010-11-30 | Dcg Systems, Inc. | Methods and systems of performing device failure analysis, electrical characterization and physical characterization |
JP4592716B2 (ja) * | 2007-02-16 | 2010-12-08 | 三菱重工業株式会社 | 試料片採取方法、翼の温度推定方法 |
JP2009115677A (ja) * | 2007-11-08 | 2009-05-28 | Jeol Ltd | 試料作製方法及びシステム |
WO2009114230A2 (en) * | 2008-03-07 | 2009-09-17 | Carl Zeiss Smt, Inc. | Reducing particle implantation |
US8288740B2 (en) * | 2008-06-27 | 2012-10-16 | Omniprobe, Inc. | Method for preparing specimens for atom probe analysis and specimen assemblies made thereby |
JP5175008B2 (ja) * | 2009-02-20 | 2013-04-03 | 株式会社日立ハイテクサイエンス | ミクロ断面加工方法 |
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US9941096B2 (en) | 2011-09-12 | 2018-04-10 | Fei Company | Glancing angle mill |
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US8740209B2 (en) * | 2012-02-22 | 2014-06-03 | Expresslo Llc | Method and apparatus for ex-situ lift-out specimen preparation |
DE102012010708B4 (de) | 2012-05-30 | 2021-12-23 | Carl Zeiss Microscopy Gmbh | Kombiniertes bearbeitungssystem zur bearbeitung mittels laser und fokussierten ionenstrahlen |
WO2014055982A1 (en) * | 2012-10-05 | 2014-04-10 | Fei Company | Bulk deposition for tilted mill protection |
EP2916342A1 (en) | 2014-03-05 | 2015-09-09 | Fei Company | Fabrication of a lamella for correlative atomic-resolution tomographic analyses |
JP6385899B2 (ja) | 2014-07-21 | 2018-09-05 | エフ・イ−・アイ・カンパニー | Tem試料取付け構造 |
US9378927B2 (en) * | 2014-09-11 | 2016-06-28 | Fei Company | AutoSlice and view undercut method |
US9627176B2 (en) | 2015-07-23 | 2017-04-18 | Fei Company | Fiducial formation for TEM/STEM tomography tilt-series acquisition and alignment |
EP3153838B1 (de) * | 2015-10-06 | 2022-07-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur präparation einer probe für die mikrostrukturdiagnostik sowie probe für die mikrostrukturdiagnostik |
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-
2006
- 2006-02-09 US US11/351,315 patent/US7442924B2/en active Active
- 2006-02-22 EP EP06110258A patent/EP1696219B1/en active Active
- 2006-02-22 JP JP2006045684A patent/JP5173142B2/ja active Active
- 2006-02-22 DE DE602006000278T patent/DE602006000278T2/de active Active
-
2012
- 2012-11-13 JP JP2012249461A patent/JP5670988B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8553188B2 (en) | 1997-06-12 | 2013-10-08 | Sharp Kabushiki Kaisha | Liquid crystal display device |
Also Published As
Publication number | Publication date |
---|---|
DE602006000278T2 (de) | 2008-11-06 |
JP2013047691A (ja) | 2013-03-07 |
US7442924B2 (en) | 2008-10-28 |
EP1696219B1 (en) | 2007-12-05 |
JP5670988B2 (ja) | 2015-02-18 |
US20060186336A1 (en) | 2006-08-24 |
DE602006000278D1 (de) | 2008-01-17 |
EP1696219A1 (en) | 2006-08-30 |
JP2006234816A (ja) | 2006-09-07 |
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