JP5160021B2 - 粒子光学投影装置 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
- H01J2237/216—Automatic focusing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
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Description
−複数のアパーチャを透過する単位ビームの形状を画定する前記複数のアパーチャを有するアパーチャアレイ手段と、
−このアパーチャアレイ手段とは別体であり、単位ビームを包囲する複数の開口部を有する少なくとも1個のデフレクタアレイ手段であって、それぞれの開口部ごとに、または複数の開口部をまとめたそれぞれのグループごとに、異なる静電電位が印加できる少なくとも2個の偏向電極が設けられ、よってデバイスを貫通する望ましい経路に従って各開口部を通過する1本または複数の単位ビームの経路を補正できる少なくとも1つのデフレクタアレイ手段と、を備え、
前記デフレクタアレイ手段の少なくとも1つは、クロス・オーバの収差を最小化するために、アパーチャを通過する単位ビームの角度を調整するようになされている。
−クロス・オーバの収差を最小化するために、アパーチャを通過する単位ビームの角度を調整する第1のデフレクタアレイ手段と、
−アパーチャによって画定される物体とは異なる虚物体を生成する第2のデフレクタアレイ手段と、を備えることが可能であり、
前記第1および第2のデフレクタアレイ手段は、相互に独立して、虚物体の位置を調整し、また単位ビームの角度を調整する。
12 抽出システム
13 コンデンサ・レンズ・システム
20 パターン画定(PD)デバイス
21、22 導電コイル
28、29 冷却板
31、32 粒子光学投影装置
33 制御手段
40 ウェーハ・ステージ
41 基板
50a、50b デフレクタ
51a、51b 導体平面
62 磁気コイル
100 リソグラフィー装置
101 照明系
102 PDシステム
103 投影系
104 標的ステーション
105 真空容器
201 カバープレート
202 バンキングプレート
203 アパーチャプレート
203' 虚物体
204 ストップ・プレート
210、220、230、250 開口部
291 取付けシステム
292 圧電アクチュエータ
300、310 磁気レンズ
301 鉄製外被
302 ギャップ
311 磁極片材料
315、325 偏向手段
321 主コイル
322、322 副コイル
410 静電アインツェル・レンズ
421 境界電極(初期電極)
422 境界電極(最終電極)
430 中央電極
431、432 半電極
501、502、503 デフレクタアレイ手段
bm 単位ビーム
bp 物体平面
c、c' クロス・オーバ
cl1、cl2 導線
cr レンズ・パラメータ修正値
cx 光軸
D1 デジタル/アナログ変換器
Δz レンズの軸方向位置
ea1、ea2、eb1、eb2 電極対
Ib ビーム電流値
I1、I2、Ibase、Ic 電磁コイルの供給電流
L1、L2 粒子光学レンズ
tp 標的
pb パターン形成したビーム
Ra1、Ra2、Rb1、Rb2 抵抗器
S 像
sp 結像フィールド
U1、U2 中央電極の電位
ZD 位置検出手段
Claims (9)
- 粒子ビーム露光装置においてエネルギー性荷電粒子によってパターンを標的(tp)上に描画するための粒子光学投影装置(32)であって、物体平面(bp)に位置してかつ少なくとも1つのクロス・オーバ(c)を介して前記物体平面から生成される前記荷電粒子のパターン形成したビーム(pb)に表される前記パターンから、所与の大きさおよび歪曲を有する像(S)を前記標的の位置に生成するようになっており、前記投影装置は、
経時変化可能なパターンを有する前記パターン形成したビームを画定する多ビーム・パターン画定手段を備え、前記多ビーム・パターン画定手段は、
−複数のアパーチャ(230)を有し、該アパーチャを透過する単位ビーム(bm)の形状を画定するアパーチャアレイ手段(203)と、
−前記アパーチャアレイ手段(203)とは別体であり、前記単位ビーム(bm)を包囲する複数の開口部(250)を有する少なくとも1つのデフレクタアレイ手段(501、502、503)であって、それぞれの開口部ごとに、または複数の開口部をまとめたそれぞれのグループごとに、開口部の両側に対して異なる静電電位が印加できる少なくとも2個の偏向電極(ea1、ea2;eb1、eb2)が設けられ、それにより、デバイス(102)を貫通する望ましい経路に従って、各開口部を通過する1本または複数の単位ビームの経路を補正できる、少なくとも1つのデフレクタアレイ手段と、を有し、
前記デフレクタアレイ手段の少なくとも1つ(502)は、前記クロス・オーバ(c)を最小化するように、前記アパーチャを通過する単位ビーム(bm)の角度を調整することを特徴とする投影装置。 - 前記デフレクタアレイ手段(502)が、前記アパーチャアレイ手段(203)の直前に位置することを特徴とする請求項1記載の投影装置。
- 前記多ビーム・パターン画定手段が、前記アパーチャアレイ手段の前記アパーチャ(230)によって画定された、前記物体とは異なる虚物体(203')を生成するようになされているデフレクタアレイ手段(503)を備えることを特徴とする請求項1記載の投影装置。
- 前記多ビーム・パターン画定手段は、
−前記クロス・オーバ(c)の収差を最小化するために、前記アパーチャを通過する単位ビーム(bm)の角度を調整するようになされている第1のデフレクタアレイ手段(502)と、
−前記アパーチャ(230)によって画定された、前記物体とは異なる虚物体(203')を生成するようになされている第2のデフレクタアレイ手段(503)とを備え、
前記第1および第2のデフレクタアレイ手段(502、503)は、相互に独立して、虚物体(203')の位置を調整し、また単位ビームの角度を調整できることを特徴とする請求項1記載の投影装置。 - 前記偏向電極電位の修正値が、像の軸方向位置および像の大きさに対するビーム電流の影響を補正するように計算されることを特徴とする請求項1記載の投影装置。
- 前記偏向電極電位の修正値は、像の歪曲に対するビーム電流の影響を追加的に補正するように計算されることを特徴とする請求項1記載の投影装置。
- 前記投影装置が、初期電極(421)、少なくとも2個の中央電極(431、432)、および最終電極(422)を有する静電アインツェル・レンズをさらに備え、前記中央電極には異なる静電電位(U1、U2)が供給されるようになっており、前記制御手段が、
パターン形成したビーム全体に対応するビーム電流値(Ib)を計算し、
投影装置の幾何学的な描画特性に対する前記ビーム電流値(Ib)の影響を補正するのに適切な、前記中央電極の電位(U1、U2)の修正値を計算し、
前記修正値に従って前記中央電極の電位(U1、U2)を制御するようになっており、
前記中央電極の電位間の差(U1−U2)は、前記中央電極(431、432)の一方の電位と、前記初期および最終電極(421、422)の電位との間の差よりも少なくとも1桁小さいことを特徴とする請求項1記載の投影装置。 - 前記投影装置が、投影装置の光軸に沿って測定した前記レンズの軸方向位置(Δz)を調整する調整可能な位置決め手段が設けられた粒子光学レンズをさらに備え、前記制御手段は、
パターン形成したビーム全体に対応するビーム電流値(Ib)を計算し、
投影装置の幾何学的な描画特性に対する前記電流値(Ib)の影響を補正するのに適切な、前記レンズの軸方向位置(Δz)の修正値を計算し、
前記修正値に従って前記位置決め手段によって前記軸方向位置(z1、z2)を制御することを特徴とする請求項1記載の投影装置。 - 前記位置決め手段が圧電アクチュエータとして実現される請求項8記載の投影装置。
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ATA457/2004 | 2004-03-15 |
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JP2005268788A JP2005268788A (ja) | 2005-09-29 |
JP5160021B2 true JP5160021B2 (ja) | 2013-03-13 |
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US (2) | US20050201246A1 (ja) |
JP (1) | JP5160021B2 (ja) |
GB (1) | GB2412232A (ja) |
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US7388217B2 (en) | 2008-06-17 |
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US20050201246A1 (en) | 2005-09-15 |
US20070125956A1 (en) | 2007-06-07 |
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