JP5156625B2 - Ｅｕｖ光源集光器の侵食の緩和 - Google Patents

Ｅｕｖ光源集光器の侵食の緩和 Download PDF

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Publication number
JP5156625B2
JP5156625B2 JP2008519459A JP2008519459A JP5156625B2 JP 5156625 B2 JP5156625 B2 JP 5156625B2 JP 2008519459 A JP2008519459 A JP 2008519459A JP 2008519459 A JP2008519459 A JP 2008519459A JP 5156625 B2 JP5156625 B2 JP 5156625B2
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Japan
Prior art keywords
collector
replacement
plasma
euv light
erosion
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Expired - Fee Related
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JP2008519459A
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Japanese (ja)
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JP2008544474A5 (OSRAM
JP2008544474A (ja
Inventor
ウィリアム エヌ パートロ
アレクサンダー アイ アーショフ
イゴー ヴィー フォーメンコフ
ディヴィッド ダブリュー マイヤーズ
ウィリアム オールダム
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サイマー インコーポレイテッド
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Priority claimed from US11/174,442 external-priority patent/US7196342B2/en
Priority claimed from US11/237,649 external-priority patent/US7141806B1/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Priority claimed from PCT/US2006/024822 external-priority patent/WO2007002593A1/en
Publication of JP2008544474A publication Critical patent/JP2008544474A/ja
Publication of JP2008544474A5 publication Critical patent/JP2008544474A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/0035—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state the material containing metals as principal radiation-generating components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
JP2008519459A 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和 Expired - Fee Related JP5156625B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US11/168,190 US7365349B2 (en) 2005-06-27 2005-06-27 EUV light source collector lifetime improvements
US11/168,190 2005-06-27
US11/174,442 US7196342B2 (en) 2004-03-10 2005-06-29 Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US11/174,442 2005-06-29
US11/237,649 2005-09-27
US11/237,649 US7141806B1 (en) 2005-06-27 2005-09-27 EUV light source collector erosion mitigation
PCT/US2006/024822 WO2007002593A1 (en) 2005-06-27 2006-06-23 Euv light source collector erosion mitigation

Publications (3)

Publication Number Publication Date
JP2008544474A JP2008544474A (ja) 2008-12-04
JP2008544474A5 JP2008544474A5 (OSRAM) 2009-08-06
JP5156625B2 true JP5156625B2 (ja) 2013-03-06

Family

ID=37595868

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008519425A Expired - Fee Related JP5091130B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善
JP2008519423A Pending JP2008544574A (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和
JP2008519459A Expired - Fee Related JP5156625B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP2008519425A Expired - Fee Related JP5091130B2 (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器寿命の改善
JP2008519423A Pending JP2008544574A (ja) 2005-06-27 2006-06-23 Ｅｕｖ光源集光器の侵食の緩和

Country Status (4)

Country Link
US (1) US7365349B2 (OSRAM)
EP (1) EP1899697B1 (OSRAM)
JP (3) JP5091130B2 (OSRAM)
WO (1) WO2007002386A2 (OSRAM)

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JP5341071B2 (ja) * 2007-06-12 2013-11-13 コーニンクレッカ フィリップス エヌ ヴェ Ｅｕｖ光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法
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CN102099746B (zh) * 2008-07-18 2013-05-08 皇家飞利浦电子股份有限公司 包含污染捕获器的极端紫外辐射生成设备
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JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
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