JP5341071B2 - Euv光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法 - Google Patents
Euv光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法 Download PDFInfo
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- JP5341071B2 JP5341071B2 JP2010511735A JP2010511735A JP5341071B2 JP 5341071 B2 JP5341071 B2 JP 5341071B2 JP 2010511735 A JP2010511735 A JP 2010511735A JP 2010511735 A JP2010511735 A JP 2010511735A JP 5341071 B2 JP5341071 B2 JP 5341071B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
Description
でターゲット層5の方へ加速され、ターゲット層5は、数eVで遊離ルテニウム原子を放出する。本例においては、平坦な反射面3を備える光学部品2が示されている。例えば多層ミラーの場合にしばしばそうであるような、このような容易にアクセス可能な形状を備える光学部品の場合は、スパッタターゲットは、図2に示されているように、同じ設計を有することができ、処理を施されるべき反射面3の前に移動させられ、処理を施されるべき反射面3に対して平行な向きにされることができる。
2 光学部品
3 反射面
4 担体基板
5 ターゲット層
6 集光器
7 シェル
8 正面
9 裏面
10 ダミーシェル
11 放射線源
12 電源
13 多層ミラー
14 真空容器
15 中間焦点
16 第1ボリューム
17 第2ボリューム
18 基板
19 デブリ軽減のための手段
Claims (10)
- 光学装置内の、EUV及び/又は軟X線の放射線を反射する光学部品にその場で処理を施す方法であり、前記光学部品が、前記光学装置の真空チャンバ内に配設され、1つ又は幾つかの表面材料から成る最上層を持つ1つ又は幾つかの反射面を有する方法であって、
前記光学装置の前記チャンバ内に前記1つ又は幾つかの表面材料の供給源を少なくとも1つ設けるステップと、
前記光学装置の動作中及び/又は動作休止中に、堆積した汚染物質の材料を覆う若しくは置換するために、且つ/又は表面材料の削摩を補償するために、前記供給源からの表面材料を前記1つ又は幾つかの反射面に堆積させるステップとを有し、
前記表面材料が、スパッタ堆積によって堆積させられ、
前記表面材料の前記供給源が、前記光学部品又は前記光学装置の他の光学部品の1つ又は幾つかの無反射面に、ターゲット層として設けられる、方法。 - 前記光学装置の動作のために用いられる緩衝ガスが、スパッタ堆積のための作業ガスとして用いられる請求項1に記載の方法。
- 前記1つ又は幾つかの反射面のうちの少なくとも1つの反射率が、絶え間なく又は繰り返し測定され、前記反射率がしきい値未満に低下したときだけ、前記表面材料が堆積させられる請求項1又は2に記載の方法。
- 前記光学装置が、EUV及び/又は軟X線ランプである請求項1、2又は3に記載の方法。
- 前記光学部品が、集光器である請求項1、2又は3に記載の方法。
- 真空チャンバ内に少なくとも1つの光学部品を有するEUV及び/又は軟X線の放射線のための光学装置、とりわけ、EUV及び/又は軟X線ランプであり、前記光学部品が、1つ又は幾つかの表面材料から成る最上層を備える1つ又は幾つかの反射面を持つ光学装置であって、前記光学装置が、前記1つ又は幾つかの表面材料の供給源を少なくとも1つ有し、前記供給源が、前記光学装置の動作中及び/又は動作休止中に、堆積した汚染物質の材料を覆う若しくは置換するために、且つ/又は表面材料の削摩を補償するために、その場で表面材料を前記1つ又は幾つかの反射面に堆積させるのに使用可能であり、
前記表面材料の供給源が、スパッタターゲットであり、前記光学装置が、スパッタ堆積によって前記供給源からの表面材料を前記1つ又は幾つかの反射面に堆積させるための手段を有し、
前記スパッタターゲットが、前記光学部品又は前記光学装置の他の光学部品の1つ又は幾つかの無反射面にターゲット層を有する、光学装置。 - 前記表面材料を堆積させるための手段が、前記表面材料の供給源及び前記光学部品に接続されるDC及びRF電源を含む請求項6に記載の光学装置。
- 前記光学部品が、幾つかの集光シェルを持つ集光器であり、前記ターゲット層が、前記集光シェルの裏面に設けられる請求項6に記載の光学装置。
- 前記光学部品が、1つ又は幾つかの多層ミラーで形成される集光器である請求項6に記載の光学装置。
- 前記光学装置が、前記1つ又は幾つかの反射面のうちの少なくとも1つの反射率を絶え間なく又は繰り返し測定するための手段と、前記表面材料を堆積させるための手段を、前記反射率がしきい値未満に低下したときだけ、前記手段が前記表面材料を堆積させるように制御するための制御ユニットとを有する請求項6に記載の光学装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IB2007/052224 WO2008152454A1 (en) | 2007-06-12 | 2007-06-12 | Optical device and method of in situ treating an euv optical component to enhance a reduced reflectivity |
Publications (2)
Publication Number | Publication Date |
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JP2010532554A JP2010532554A (ja) | 2010-10-07 |
JP5341071B2 true JP5341071B2 (ja) | 2013-11-13 |
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JP2010511735A Active JP5341071B2 (ja) | 2007-06-12 | 2007-06-12 | Euv光学部品に低下した反射率を高めるための処理をその場で施す光学装置及び方法 |
Country Status (6)
Country | Link |
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US (2) | US9110390B2 (ja) |
EP (1) | EP2158519B1 (ja) |
JP (1) | JP5341071B2 (ja) |
KR (1) | KR101333032B1 (ja) |
CN (1) | CN101681114B (ja) |
WO (1) | WO2008152454A1 (ja) |
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DE102011076011A1 (de) * | 2011-05-18 | 2012-11-22 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und optisches System für die EUV-Lithographie |
US9539622B2 (en) * | 2014-03-18 | 2017-01-10 | Asml Netherlands B.V. | Apparatus for and method of active cleaning of EUV optic with RF plasma field |
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US5911858A (en) * | 1997-02-18 | 1999-06-15 | Sandia Corporation | Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors |
US6385290B1 (en) * | 1998-09-14 | 2002-05-07 | Nikon Corporation | X-ray apparatus |
TW548524B (en) | 2000-09-04 | 2003-08-21 | Asm Lithography Bv | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
DE10101014A1 (de) * | 2001-01-05 | 2002-07-11 | Zeiss Carl | Beschichtung optischer Elemente, insbesondere für Verwendung mit Ultraviolettlicht |
US6736943B1 (en) * | 2001-03-15 | 2004-05-18 | Cierra Photonics, Inc. | Apparatus and method for vacuum coating deposition |
JP2003133205A (ja) | 2001-10-24 | 2003-05-09 | Oki Electric Ind Co Ltd | 反射型マスク、反射型マスク製造方法及び反射型マスク洗浄方法 |
KR20040043046A (ko) * | 2002-11-15 | 2004-05-22 | 삼성전자주식회사 | 마그네트론 스퍼터링 장치 및 스퍼터링 방법 |
US20040104707A1 (en) * | 2002-11-29 | 2004-06-03 | May Marcus W. | Method and apparatus for efficient battery use by a handheld multiple function device |
US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
FR2854169B1 (fr) | 2003-04-28 | 2005-06-10 | Commissariat Energie Atomique | Procede destine a eviter le depot de particules contaminatrices sur la surface d'un micro-composant, dispositif de stockage d'un micro-composant et dispositif de depot de couches minces. |
SG115693A1 (en) * | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
JP4851325B2 (ja) | 2003-07-29 | 2012-01-11 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学装置の表面を洗浄する方法及び機器 |
GB0426036D0 (en) | 2004-11-26 | 2004-12-29 | Boc Group Plc | Protection of surfaces exposed to charged particles |
US7211810B2 (en) * | 2004-12-29 | 2007-05-01 | Asml Netherlands B.V. | Method for the protection of an optical element, lithographic apparatus, and device manufacturing method |
US7449703B2 (en) * | 2005-02-25 | 2008-11-11 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery target material handling |
JP2006351435A (ja) | 2005-06-17 | 2006-12-28 | Ushio Inc | プラズマ発生装置 |
US7365349B2 (en) * | 2005-06-27 | 2008-04-29 | Cymer, Inc. | EUV light source collector lifetime improvements |
US7180083B2 (en) | 2005-06-27 | 2007-02-20 | Cymer, Inc. | EUV light source collector erosion mitigation |
US7372049B2 (en) * | 2005-12-02 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus including a cleaning device and method for cleaning an optical element |
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2007
- 2007-06-12 CN CN2007800533358A patent/CN101681114B/zh active Active
- 2007-06-12 EP EP07766730A patent/EP2158519B1/en active Active
- 2007-06-12 WO PCT/IB2007/052224 patent/WO2008152454A1/en active Application Filing
- 2007-06-12 US US12/602,798 patent/US9110390B2/en active Active
- 2007-06-12 KR KR1020107000713A patent/KR101333032B1/ko active IP Right Grant
- 2007-06-12 JP JP2010511735A patent/JP5341071B2/ja active Active
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2015
- 2015-08-03 US US14/816,106 patent/US9897724B2/en active Active
Also Published As
Publication number | Publication date |
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EP2158519A1 (en) | 2010-03-03 |
KR101333032B1 (ko) | 2013-11-26 |
US9110390B2 (en) | 2015-08-18 |
CN101681114B (zh) | 2013-05-08 |
KR20100021649A (ko) | 2010-02-25 |
US9897724B2 (en) | 2018-02-20 |
US20150338560A1 (en) | 2015-11-26 |
US20100238422A1 (en) | 2010-09-23 |
JP2010532554A (ja) | 2010-10-07 |
CN101681114A (zh) | 2010-03-24 |
EP2158519B1 (en) | 2012-08-15 |
WO2008152454A1 (en) | 2008-12-18 |
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