JP5156625B2 - Euv光源集光器の侵食の緩和 - Google Patents
Euv光源集光器の侵食の緩和 Download PDFInfo
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- JP5156625B2 JP5156625B2 JP2008519459A JP2008519459A JP5156625B2 JP 5156625 B2 JP5156625 B2 JP 5156625B2 JP 2008519459 A JP2008519459 A JP 2008519459A JP 2008519459 A JP2008519459 A JP 2008519459A JP 5156625 B2 JP5156625 B2 JP 5156625B2
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- 230000003628 erosive effect Effects 0.000 title claims description 21
- 230000000116 mitigating effect Effects 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims abstract description 135
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000011247 coating layer Substances 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 239000012080 ambient air Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 150000004678 hydrides Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000977 initiatory effect Effects 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910001432 tin ion Inorganic materials 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- General Physics & Mathematics (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
Description
本出願は、2005年9月27日出願の「EUV光源集光器侵食の緩和」という名称の米国特許出願出願番号第11/237、649号に対する優先権を請求するものであり、かつ2005年6月29日出願の「EUV光源の内部構成要素に及ぼすプラズマ生成デブリの影響を低減するためのシステム及び方法」という名称の米国特許出願出願番号第11/174、442号、及び2005年6月27日出願の米国特許出願出願番号第11/168、190号の一部継続出願であり、これらの開示内容は、この記述により引用により組み込まれる。
本発明は、EUV光源集光器侵食の緩和に関するものである。
本発明の実施形態の態様による置換材料を供給する1つの方法は、プラズマ原料物質ターゲット液滴22材料内の小さな部分としてこのような置換材料を含めることとすることができる。このような構成により、ミラー置換材料並びに錫EUV原料元素を主集光器表面に入射させることができる。錫及び置換材料のいずれも、次に集光器表面に付着する可能性があるが、例えば、先に参照した現在特許出願中の特許出願で提案されているようなハロゲン化学的洗浄を用いて、錫原子を除去することによって置換材料のみを残すことができる。
このような材料は、上述のように被覆層材料、例えばモリブデンとすることができるが、例えば、イットリウム又はルテニウムとすることもできる。
12 EUV光集光器
20 プラズマ開始サイト
22 ターゲット液滴
Claims (9)
- EUV光生成プラズマにおいて生じた材料との除去相互作用により除去を受ける被覆材料から成る集光器外面を備えた多層ミラー集光器を含む集光器のためのEUV光源集光器侵食緩和方法であって、
前記集光器外面の侵食された前記被覆材料を置換するための置換材料をEUVプラズマ原料物質内に含める段階、
を含み、
前記置換材料は、液体錫中で可溶性である材料を含むことを特徴とする方法。 - 前記置換材料は、前記多層ミラーの前記被覆材料と同じ材料を含む、
ことを更に含むことを特徴とする請求項1に記載の方法。 - 前記置換材料は、堆積したプラズマ原料物質を前記集光器から除去するのに使用されるエッチング材料によるエッチングを受けない材料を含む、
ことを更に含むことを特徴とする請求項1に記載の方法。 - 前記エッチング材料は、ハロゲンを含む、
ことを更に含むことを特徴とする請求項3に記載の方法。 - 前記置換材料は、前記集光器の前記多層ミラーのEUV反射率に影響を与えない表面粗度を含むコーティングとして前記集光器外面上に配置することができる材料を含む、
ことを更に含むことを特徴とする請求項1に記載の方法。 - 液体錫中の前記置換材料の溶解度が、前記集光器外面の侵食を相殺するのに必要とされる濃度である、
ことを更に含むことを特徴とする請求項1に記載の方法。 - 前記置換材料は、前記集光器多層ミラーの前記被覆層の前記材料に適合する材料を含む、
ことを更に含むことを特徴とする請求項1に記載の方法。 - 前記置換材料は、前記集光器多層ミラーの前記被覆層の前記材料を通して拡散しない材料を含む、
ことを更に含むことを特徴とする請求項7に記載の方法。 - 前記置換材料は、周囲の空気への露出に耐えることができる材料、周囲の空気への露出の前に何らかの手段によって除去することができる材料、及び前記集光器多層ミラーの前記外面から除去される周囲の空気に露出された時の反応生成物を有する材料を含む材料の群から選択された材料を含む、
ことを更に含むことを特徴とする請求項1に記載の方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/168,190 US7365349B2 (en) | 2005-06-27 | 2005-06-27 | EUV light source collector lifetime improvements |
US11/168,190 | 2005-06-27 | ||
US11/174,442 | 2005-06-29 | ||
US11/174,442 US7196342B2 (en) | 2004-03-10 | 2005-06-29 | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US11/237,649 | 2005-09-27 | ||
US11/237,649 US7141806B1 (en) | 2005-06-27 | 2005-09-27 | EUV light source collector erosion mitigation |
PCT/US2006/024822 WO2007002593A1 (en) | 2005-06-27 | 2006-06-23 | Euv light source collector erosion mitigation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008544474A JP2008544474A (ja) | 2008-12-04 |
JP2008544474A5 JP2008544474A5 (ja) | 2009-08-06 |
JP5156625B2 true JP5156625B2 (ja) | 2013-03-06 |
Family
ID=37595868
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519423A Pending JP2008544574A (ja) | 2005-06-27 | 2006-06-23 | Euv光源集光器の侵食の緩和 |
JP2008519459A Expired - Fee Related JP5156625B2 (ja) | 2005-06-27 | 2006-06-23 | Euv光源集光器の侵食の緩和 |
JP2008519425A Expired - Fee Related JP5091130B2 (ja) | 2005-06-27 | 2006-06-23 | Euv光源集光器寿命の改善 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519423A Pending JP2008544574A (ja) | 2005-06-27 | 2006-06-23 | Euv光源集光器の侵食の緩和 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519425A Expired - Fee Related JP5091130B2 (ja) | 2005-06-27 | 2006-06-23 | Euv光源集光器寿命の改善 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7365349B2 (ja) |
EP (1) | EP1899697B1 (ja) |
JP (3) | JP2008544574A (ja) |
WO (1) | WO2007002386A2 (ja) |
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JP4807560B2 (ja) * | 2005-11-04 | 2011-11-02 | 国立大学法人 宮崎大学 | 極端紫外光発生方法および極端紫外光発生装置 |
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US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
JP5086664B2 (ja) * | 2007-03-02 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5001055B2 (ja) * | 2007-04-20 | 2012-08-15 | 株式会社小松製作所 | 極端紫外光源装置 |
KR101333032B1 (ko) * | 2007-06-12 | 2013-11-26 | 코닌클리케 필립스 엔.브이. | 감소된 반사율을 향상시키기 위하여 euv 광 컴포넌트를 인시추 처리하는 광학 장치 및 방법 |
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JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
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-
2005
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WO2007002386A2 (en) | 2007-01-04 |
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JP2008544574A (ja) | 2008-12-04 |
JP2008544575A (ja) | 2008-12-04 |
EP1899697B1 (en) | 2012-05-30 |
WO2007002386A3 (en) | 2008-03-13 |
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