JP5155241B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP5155241B2 JP5155241B2 JP2009097948A JP2009097948A JP5155241B2 JP 5155241 B2 JP5155241 B2 JP 5155241B2 JP 2009097948 A JP2009097948 A JP 2009097948A JP 2009097948 A JP2009097948 A JP 2009097948A JP 5155241 B2 JP5155241 B2 JP 5155241B2
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- carbon nanotube
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 110
- 239000002041 carbon nanotube Substances 0.000 claims description 78
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 239000002238 carbon nanotube film Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 34
- 239000002131 composite material Substances 0.000 claims description 29
- 239000002923 metal particle Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002079 double walled nanotube Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- 239000002109 single walled nanotube Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
本実施例において、前記複数のカーボンナノチューブが配向して配列するカーボンナノチューブフィルムは、図4に示されている。前記カーボンナノチューブフィルムは、カーボンナノチューブアレイから引き伸ばし、形成されるものである。該カーボンナノチューブフィルムは、同じ方向に沿って、配列された複数のカーボンナノチューブを含む。図5を参照すると、具体的には、前記カーボンナノチューブフィルムは、端と端に接続され、基本的に同じ長さの複数のカーボンナノチューブセグメント186を含む。前記カーボンナノチューブセグメント186は、端と端が分子間力で連接される。各々のカーボンナノチューブセグメント186は、同じ方向に沿って、均一的に配列される複数のカーボンナノチューブ188からなり、各々の前記カーボンナノチューブ188が分子間力で緊密に連接される。前記カーボンナノチューブフィルムは、カーボンナノチューブアレイから伸び出すことによって、形成されるので、該カーボンナノチューブフィルムの長さと幅は、カーボンナノチューブアレイが成長された基板の寸法に関係する。
単一のカーボンナノチューブフィルムは、絡み合った複数のカーボンナノチューブを含む。ここで、前記複数のカーボンナノチューブは、分子間力で接近して、相互に絡み合って、カーボンナノチューブネットに形成されている。前記複数のカーボンナノチューブは、等方的に、均一に前記カーボンナノチューブ構造体に分布されている。前記複数のカーボンナノチューブは配向せずに配列されて、多くの微小な穴が形成されている。ここで、単一の前記微小な穴の直径が10マイクロメートル以下になる。前記カーボンナノチューブフィルムの厚さは、1マイクロメートル〜1ミリメートルである。前記カーボンナノチューブフィルムは、溶液に浸漬したカーボンナノチューブ原料をろ過して成るものである。
単一のカーボンナノチューブフィルムは、等方的に配列されているか、所定の複数の方向に沿って配列されているか、または、異なる方向に沿って配列されている複数のカーボンナノチューブを含む。前記カーボンナノチューブフィルムは、押し器具を利用して、カーボンナノチューブアレイを同じ方向又は異なる方向に沿って押して成るものである。前記カーボンナノチューブフィルムにおいて、隣接するカーボンナノチューブは分子間力で接続され、カーボンナノチューブフィルムの表面と0°〜15°の角度が形成されている。前記カーボンナノチューブフィルムの厚さは、0.5ナノメートル〜1ミリメートルである。
12、32 背面電極
14、34 シリコン基板
16、36 ドープシリコン層
18、38 前面電極
20 電極
22 反射防止層
141、341 シリコン基板の第一表面
142、342 凹槽
143、343 シリコン基板の第二表面
144、344 凹槽の内表面
181 前面電極の第一表面
182 前面電極の第二表面
183 カーボンナノチューブ構造体
184 金属粒子
186 カーボンナノチューブセグメント
188 カーボンナノチューブ
Claims (3)
- 第一表面と該第一表面に対向する第二表面を有し、該第二表面に複数の凹槽が形成されたp型のシリコン基板と、
前記シリコン基板の第一表面に設置され、該第一表面とオーミック接触する背面電極と、
前記凹槽の内表面を含む前記第二表面上全体に設置されたn型のドープシリコン層と、
前記シリコン基板の第二表面に設置された前面電極と、
を含み、
前記前面電極がカーボンナノチューブ複合構造体を含み、
前記カーボンナノチューブ複合構造体は、カーボンナノチューブ構造体及び該カーボンナノチューブ構造体に均一に分布された金属粒子よりなり、
前記カーボンナノチューブ構造体が、少なくとも一枚のカーボンナノチューブフィルムであり、単一のカーボンナノチューブフィルムは、配向して配列された複数のカーボンナノチューブを含み、該複数のカーボンナノチューブが同じ方向に沿って、均一的に配列されており、
前記金属粒子の重量は、前記カーボンナノチューブ複合構造体の重量の10%〜30%であり、
前記前面電極は、前記凹槽の内表面と接触しないように前記凹槽の開口を被覆していることを特徴とする太陽電池。 - 前記金属粒子は、プラチナ粒子、パラジウム粒子、ルテニウム粒子、銀粒子、金粒子又はそれらの少なくとも二種以上の混合物であることを特徴とする、請求項1に記載の太陽電池。
- 前記カーボンナノチューブ構造体が少なくとも二枚の積層されたカーボンナノチューブフィルムを含み、隣接する二枚のカーボンナノチューブフィルムにおけるカーボンナノチューブが0°以上90°以下の角度を成すことを特徴とする、請求項1又は2に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810066749.0A CN101562203B (zh) | 2008-04-18 | 2008-04-18 | 太阳能电池 |
CN200810066749.0 | 2008-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009260355A JP2009260355A (ja) | 2009-11-05 |
JP5155241B2 true JP5155241B2 (ja) | 2013-03-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009097948A Active JP5155241B2 (ja) | 2008-04-18 | 2009-04-14 | 太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090260679A1 (ja) |
JP (1) | JP5155241B2 (ja) |
CN (1) | CN101562203B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US8604332B2 (en) * | 2010-03-04 | 2013-12-10 | Guardian Industries Corp. | Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same |
TWI405344B (zh) * | 2010-04-01 | 2013-08-11 | Motech Ind Inc | 太陽能電池結構 |
KR20130129886A (ko) * | 2010-06-08 | 2013-11-29 | 퍼시픽 인테그레이티드 에너지, 인크. | 강화된 필드들 및 전자 방출을 갖는 광학 안테나들 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN103137716B (zh) * | 2011-11-25 | 2016-04-27 | 清华大学 | 太阳能电池、太阳能电池组及其制备方法 |
JP6613869B2 (ja) * | 2015-12-18 | 2019-12-04 | トヨタ紡織株式会社 | n型材料、及びその製造方法 |
CN108933182B (zh) | 2017-05-24 | 2020-05-15 | 清华大学 | 光探测器 |
CN108963003B (zh) | 2017-05-24 | 2020-06-09 | 清华大学 | 太阳能电池 |
CN108933172B (zh) | 2017-05-24 | 2020-05-15 | 清华大学 | 半导体元件 |
CN108933134B (zh) | 2017-05-24 | 2020-09-25 | 清华大学 | 半导体器件 |
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KR100813243B1 (ko) * | 2006-07-04 | 2008-03-13 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법 |
CN100405617C (zh) * | 2006-12-29 | 2008-07-23 | 清华大学 | 基于碳纳米管薄膜的太阳能电池及其制备方法 |
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2008
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CN101562203B (zh) | 2014-07-09 |
US20090260679A1 (en) | 2009-10-22 |
JP2009260355A (ja) | 2009-11-05 |
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