JP5646586B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP5646586B2 JP5646586B2 JP2012279423A JP2012279423A JP5646586B2 JP 5646586 B2 JP5646586 B2 JP 5646586B2 JP 2012279423 A JP2012279423 A JP 2012279423A JP 2012279423 A JP2012279423 A JP 2012279423A JP 5646586 B2 JP5646586 B2 JP 5646586B2
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- 239000000758 substrate Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 68
- 229910052710 silicon Inorganic materials 0.000 description 68
- 239000010703 silicon Substances 0.000 description 68
- 239000000853 adhesive Substances 0.000 description 38
- 230000001070 adhesive effect Effects 0.000 description 36
- 239000000463 material Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 10
- 239000007769 metal material Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
図1、図2を参照すると、本発明の実施例1は太陽電池10を提供する。該太陽電池10は絶縁基板110と複数の電池ユニット120を含み、絶縁基板110の表面には、複数の凹溝112が間隔をあけて設けられ、複数の電池ユニット120は複数の凹溝112に対応して複数の凹溝112に設置される。一つの電池ユニット120は、第一電極層122と、p型シリコン層124と、n型シリコン層126、第二電極層128と、を含む。電池ユニット120において、第一電極層と、p型半導体層と、n型半導体層と、第二電極層とは一つの直線上に並列に接触して設置される。各電池ユニット120は前記直線と平行する表面を有し、該表面は受光面であり、入射光線を受ける。p型シリコン層124とn型シリコン層126とは接触しpn接合を形成する。
図6を参照すると、本発明の実施例2は太陽電池20を提供する。本実施例の太陽電池20の構造と、実施例1の太陽電池10の構造とは同じであるが、異なる点は、太陽電池20において、絶縁基板110の凹溝112を形成する表面は弧状の表面であり、各凹溝112には一つの電池ユニット120が設置される。本実施例において、絶縁基板110の凹溝112を形成する表面は半円球の表面であり、絶縁基板110は半円球体である。これにより、電池ユニット120は太陽光を受けることに優れ、太陽電池20の光起電力効果を高めることができる。
図7を参照すると、本発明の実施例3は太陽電池30を提供する。本実施例の太陽電池30の構造と、実施例1の太陽電池10の構造とは同じであるが、異なる点は、太陽電池30において、絶縁基板110の内部に、ストリップ状の導電条片130が設置される。絶縁基板110の凹溝112が設置されない表面には、太陽電池30の両端の導電条片130が露出する。これによって、太陽電池30を外部に接続することができる。
図8を参照すると、本発明の実施例4は太陽電池40を提供する。本実施例の太陽電池40の構造と、実施例1の太陽電池10の構造とは同じであるが、異なる点は、各絶縁基板110の凹溝112に、二つの電池ユニット120が設置される。この二つの電池ユニット120は直列接続される。二つの電池ユニット120において、一つの電池ユニット120のp型シリコン層124と、他の電池ユニット120のn型シリコン層126とが電気的に接続される。これによって、二つの電池ユニット120は直列接続される。
図9を参照すると、本発明の実施例4は太陽電池50を提供する。本実施例の太陽電池50の構造と、実施例1の太陽電池10の構造とは同じであるが、異なる点は、各絶縁基板110の凹溝112に設置される二つの電池ユニット120は並列に接続される。二つの電池ユニット120において、一つの電池ユニット120のp型シリコン層124と、他の電池ユニット120のp型シリコン層124とは電気的に接続される。或いは、一つの電池ユニット120のn型シリコン層126と、他の電池ユニット120のn型シリコン層126とは電気的に接続される。また、凹溝112に設置される電池ユニット120の数量は二つ以上でも良い。
本発明の実施例6は太陽電池60を提供する。本実施例の太陽電池60の構造と、実施例1の太陽電池10の構造とは同じであるが、異なる点は、電池ユニット120の第一表面1222と凹溝112の第一側面1121との間に導電層が設置され、電池ユニット120の第二表面1282と凹溝112の第二側面1122との間にも導電層が設置される。該導電層の材料に制限はなく、導電層の材料は金属或いは導電樹脂からなる。本実施例において、導電層の材料は銀である。蒸着法によって、凹溝112の第一側面1121の表面或いは第二側面1122の表面に導電層が形成される。
本発明の実施例7は太陽電池70を提供する。該太陽電池70は絶縁基板110と複数の電池ユニット120を含み、該絶縁基板110の表面には、複数の凹溝112が、互いに間隔をあけて設置される。各凹溝112は底面を有する。一つの凹溝112に、少なくとも一つの電池ユニット120が設置される。一つの電池ユニット120は、p型シリコン層と、n型シリコン層と、を含む。p型シリコン層とn型シリコン層とは接触して、接触面を形成する。該接触面は底面と交差し、該接触面は底面と垂直である。複数の凹溝112の間に、ストリップ状の導電条片130によって、複数の電池ユニット120が並列接続される、或いは、直列接続される。また、各凹溝112には、直列接続される複数の電池ユニット120が設置され、隣接する電池ユニット120の間には電極層が設けられる。
110 絶縁基板
112 凹溝
120 電池ユニット
121 第三表面
122 第一電極層
123 第四表面
124 p型シリコン層
125 第五表面
126 n型シリコン層
128 第二電極層
129 第六表面
130 導電条片
140 第一接着剤
144 第二接着剤
150 反射素子
160 透明絶縁層
170 反射防止層
1121 第一側面
1122 第二側面
1123 第三側面
1124 第四側面
1222 第一表面
1242 第七表面
1244 第八表面
1262 第九表面
1264 第十表面
1282 第二表面
Claims (1)
- 複数の電池ユニットと、絶縁基板と、を含む太陽電池であって、
一つの電池ユニットは、第一電極層と、p型半導体層と、n型半導体層と、第二電極層と、を含み、
前記一つの電池ユニットは受光面を有し、
前記p型半導体層と前記n型半導体層は接触してpn接合を形成し、
一つの前記電池ユニットにおいて、前記第一電極層と、前記p型半導体層と、前記n型半導体層と、前記第二電極層と、は一つの直線上に並列に接触して設置され、
前記受光面は前記直線と平行する表面であり、
前記絶縁基板の一つの表面に、複数の凹溝が間隔をあけて設置され、
各々の前記凹溝には、複数の電池ユニットがそれぞれ設置され、
前記凹溝と前記電池ユニットとの間には、反射素子が設置されていて、
各々の前記凹溝に設置された前記複数の電池ユニットの形状及びサイズが、前記凹溝の形状及びサイズと対応し、前記複数の電池ユニットの厚さは前記凹溝の深度と同じであることを特徴とする太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110436116.6 | 2011-12-22 | ||
CN201110436116.6A CN103178137B (zh) | 2011-12-22 | 2011-12-22 | 太阳能电池组 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013135236A JP2013135236A (ja) | 2013-07-08 |
JP5646586B2 true JP5646586B2 (ja) | 2014-12-24 |
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ID=48637876
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012279423A Active JP5646586B2 (ja) | 2011-12-22 | 2012-12-21 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130160818A1 (ja) |
JP (1) | JP5646586B2 (ja) |
CN (1) | CN103178137B (ja) |
TW (1) | TWI469370B (ja) |
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GB201301683D0 (en) | 2013-01-30 | 2013-03-13 | Big Solar Ltd | Method of creating non-conductive delineations with a selective coating technology on a structured surface |
GB201405662D0 (en) * | 2014-03-28 | 2014-05-14 | Big Solar Ltd | Apparatus and method |
WO2016132384A1 (en) | 2015-02-17 | 2016-08-25 | Council Of Scientific And Industrial Research | Modular micro-concentrator array based multi-directional sun tracking system for photovoltaic and thermal energy harvesting |
GB2549132A (en) | 2016-04-07 | 2017-10-11 | Big Solar Ltd | Aperture in a semiconductor |
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DE19711319C1 (de) * | 1997-03-18 | 1998-03-12 | Daimler Benz Aerospace Ag | Solarmodul und Verfahren zu seiner Herstellung |
EP1184526B1 (en) * | 1999-06-09 | 2017-05-10 | Kaneka Corporation | Roof tile for solar cell module |
AU5400501A (en) * | 2000-06-27 | 2002-01-03 | Canon Kabushiki Kaisha | Photovoltaic element, producing method therefor, and solar cell modules |
AU2002255303B2 (en) * | 2002-05-02 | 2006-07-06 | Sphelar Power Corporation | Light-Receiving panel or light-emitting panel, and manufacturing method thereof |
US7339184B2 (en) * | 2004-07-07 | 2008-03-04 | Nanosys, Inc | Systems and methods for harvesting and integrating nanowires |
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JP2007184566A (ja) * | 2005-12-06 | 2007-07-19 | Canon Inc | 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置 |
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WO2009101944A1 (ja) * | 2008-02-14 | 2009-08-20 | Sharp Kabushiki Kaisha | 半導体素子及び微細構造体配置基板の製造方法並びに表示素子 |
CN101552295A (zh) * | 2008-04-03 | 2009-10-07 | 清华大学 | 太阳能电池 |
JP5042101B2 (ja) * | 2008-03-28 | 2012-10-03 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
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WO2010134019A2 (en) * | 2009-05-19 | 2010-11-25 | Ramot At Tel Aviv University Ltd. | Vertical junction pv cells |
US20100326493A1 (en) * | 2009-06-29 | 2010-12-30 | Dillon Carter Sherman | Photovoltaic apparatus utilizing internal reflection |
JP2011086647A (ja) * | 2009-10-13 | 2011-04-28 | Hokkaido Univ | 光電変換素子評価装置、光電変換素子評価方法および光電変換素子の製造方法 |
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US20130160818A1 (en) | 2013-06-27 |
CN103178137A (zh) | 2013-06-26 |
TW201327860A (zh) | 2013-07-01 |
JP2013135236A (ja) | 2013-07-08 |
CN103178137B (zh) | 2016-04-13 |
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