JP5153998B2 - マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 - Google Patents

マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 Download PDF

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JP5153998B2
JP5153998B2 JP2005050936A JP2005050936A JP5153998B2 JP 5153998 B2 JP5153998 B2 JP 5153998B2 JP 2005050936 A JP2005050936 A JP 2005050936A JP 2005050936 A JP2005050936 A JP 2005050936A JP 5153998 B2 JP5153998 B2 JP 5153998B2
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Japan
Prior art keywords
transparent substrate
mask
main surface
mask stage
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005050936A
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English (en)
Japanese (ja)
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JP2006235321A5 (enExample
JP2006235321A (ja
Inventor
勝 田辺
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Hoya Corp
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Hoya Corp
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2005050936A priority Critical patent/JP5153998B2/ja
Priority to KR1020060017553A priority patent/KR101170851B1/ko
Priority to TW095106197A priority patent/TWI454835B/zh
Priority to DE102006008734A priority patent/DE102006008734A1/de
Priority to CN2006100514335A priority patent/CN1862376B/zh
Priority to US11/362,353 priority patent/US7901840B2/en
Publication of JP2006235321A publication Critical patent/JP2006235321A/ja
Publication of JP2006235321A5 publication Critical patent/JP2006235321A5/ja
Priority to US12/904,970 priority patent/US8026025B2/en
Application granted granted Critical
Publication of JP5153998B2 publication Critical patent/JP5153998B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005050936A 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 Expired - Fee Related JP5153998B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005050936A JP5153998B2 (ja) 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法
KR1020060017553A KR101170851B1 (ko) 2005-02-25 2006-02-23 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법
DE102006008734A DE102006008734A1 (de) 2005-02-25 2006-02-24 Verfahren zum Herstellen eines transparenten Maskenrohlingsubstrats, Verfahren zum Herstellen eines Maskenrohlings und Verfahren zum Herstellen einer Belichtungsmaske
CN2006100514335A CN1862376B (zh) 2005-02-25 2006-02-24 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法
TW095106197A TWI454835B (zh) 2005-02-25 2006-02-24 遮罩坯料用透明基板的製造方法、遮罩坯料的製造方法及曝光遮罩製造方法
US11/362,353 US7901840B2 (en) 2005-02-25 2006-02-27 Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method
US12/904,970 US8026025B2 (en) 2005-02-25 2010-10-14 Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005050936A JP5153998B2 (ja) 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2006235321A JP2006235321A (ja) 2006-09-07
JP2006235321A5 JP2006235321A5 (enExample) 2009-09-24
JP5153998B2 true JP5153998B2 (ja) 2013-02-27

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JP2005050936A Expired - Fee Related JP5153998B2 (ja) 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法

Country Status (6)

Country Link
US (2) US7901840B2 (enExample)
JP (1) JP5153998B2 (enExample)
KR (1) KR101170851B1 (enExample)
CN (1) CN1862376B (enExample)
DE (1) DE102006008734A1 (enExample)
TW (1) TWI454835B (enExample)

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JP4856798B2 (ja) * 2006-10-18 2012-01-18 Ｈｏｙａ株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法
JP5304644B2 (ja) * 2007-05-09 2013-10-02 株式会社ニコン フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法
JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
CN102187275B (zh) 2008-11-26 2013-09-04 Hoya株式会社 掩模板用基板、掩模板用基板组及半导体器件的制造方法
JP4728414B2 (ja) 2009-03-25 2011-07-20 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
FR2955654B1 (fr) * 2010-01-25 2012-03-30 Soitec Silicon Insulator Technologies Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches
JP5683930B2 (ja) * 2010-01-29 2015-03-11 Hoya株式会社 マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法
KR101447063B1 (ko) * 2010-03-30 2014-10-06 호야 가부시키가이샤 마스크 블랭크용 기판의 제조방법, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
EP2434345B1 (en) * 2010-09-27 2013-07-03 Imec Method and system for evaluating euv mask flatness
JP5823339B2 (ja) * 2011-04-12 2015-11-25 Hoya株式会社 フォトマスク用基板、フォトマスク及びパターン転写方法
JP5937873B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP5688564B2 (ja) * 2011-06-20 2015-03-25 パナソニックＩｐマネジメント株式会社 電子部品実装用装置および電子部品実装用の作業実行方法
KR101447968B1 (ko) * 2013-04-16 2014-10-13 주식회사 고영테크놀러지 기판 검사를 위한 기준평면 설정방법 및 기준평면을 이용한 기판 검사방법
KR101395055B1 (ko) * 2013-05-28 2014-05-14 삼성코닝정밀소재 주식회사 면취 작업대 평탄도 측정 방법
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
KR102147237B1 (ko) * 2013-12-27 2020-08-24 삼성전자주식회사 제어 장치를 서버에 등록하는 방법 및 장치
JP6398927B2 (ja) * 2015-09-18 2018-10-03 信越化学工業株式会社 フォトマスクブランク、その製造方法及びフォトマスク
CN108500826A (zh) * 2017-02-27 2018-09-07 东莞新科技术研究开发有限公司 晶圆背面研磨方法
TWI686763B (zh) * 2018-02-14 2020-03-01 德德知通股份有限公司 透過網路進行商標電子延展申請的系統、伺服端計算機裝置及計算機可讀取的儲存媒體
NL2027098B1 (en) * 2020-01-16 2021-10-14 Asml Netherlands Bv Pellicle membrane for a lithographic apparatus

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Also Published As

Publication number Publication date
CN1862376A (zh) 2006-11-15
US8026025B2 (en) 2011-09-27
CN1862376B (zh) 2011-05-04
KR101170851B1 (ko) 2012-08-02
TW200702905A (en) 2007-01-16
US20060194126A1 (en) 2006-08-31
US7901840B2 (en) 2011-03-08
TWI454835B (zh) 2014-10-01
DE102006008734A1 (de) 2006-09-28
KR20060094888A (ko) 2006-08-30
JP2006235321A (ja) 2006-09-07
US20110027701A1 (en) 2011-02-03

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