KR101170851B1 - 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법 - Google Patents

마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법 Download PDF

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KR101170851B1
KR101170851B1 KR1020060017553A KR20060017553A KR101170851B1 KR 101170851 B1 KR101170851 B1 KR 101170851B1 KR 1020060017553 A KR1020060017553 A KR 1020060017553A KR 20060017553 A KR20060017553 A KR 20060017553A KR 101170851 B1 KR101170851 B1 KR 101170851B1
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South Korea
Prior art keywords
transparent substrate
mask
main surface
flatness
exposure apparatus
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Expired - Fee Related
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KR1020060017553A
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English (en)
Korean (ko)
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KR20060094888A (ko
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마사루 타나베
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020060017553A 2005-02-25 2006-02-23 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법 Expired - Fee Related KR101170851B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005050936A JP5153998B2 (ja) 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法
JPJP-P-2005-00050936 2005-02-25

Publications (2)

Publication Number Publication Date
KR20060094888A KR20060094888A (ko) 2006-08-30
KR101170851B1 true KR101170851B1 (ko) 2012-08-02

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KR1020060017553A Expired - Fee Related KR101170851B1 (ko) 2005-02-25 2006-02-23 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법

Country Status (6)

Country Link
US (2) US7901840B2 (enExample)
JP (1) JP5153998B2 (enExample)
KR (1) KR101170851B1 (enExample)
CN (1) CN1862376B (enExample)
DE (1) DE102006008734A1 (enExample)
TW (1) TWI454835B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4856798B2 (ja) * 2006-10-18 2012-01-18 Ｈｏｙａ株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法
JP5304644B2 (ja) * 2007-05-09 2013-10-02 株式会社ニコン フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法
JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
CN102187275B (zh) 2008-11-26 2013-09-04 Hoya株式会社 掩模板用基板、掩模板用基板组及半导体器件的制造方法
JP4728414B2 (ja) 2009-03-25 2011-07-20 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
FR2955654B1 (fr) * 2010-01-25 2012-03-30 Soitec Silicon Insulator Technologies Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches
JP5683930B2 (ja) * 2010-01-29 2015-03-11 Hoya株式会社 マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法
KR101447063B1 (ko) * 2010-03-30 2014-10-06 호야 가부시키가이샤 마스크 블랭크용 기판의 제조방법, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
EP2434345B1 (en) * 2010-09-27 2013-07-03 Imec Method and system for evaluating euv mask flatness
JP5823339B2 (ja) * 2011-04-12 2015-11-25 Hoya株式会社 フォトマスク用基板、フォトマスク及びパターン転写方法
JP5937873B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP5688564B2 (ja) * 2011-06-20 2015-03-25 パナソニックＩｐマネジメント株式会社 電子部品実装用装置および電子部品実装用の作業実行方法
KR101447968B1 (ko) * 2013-04-16 2014-10-13 주식회사 고영테크놀러지 기판 검사를 위한 기준평면 설정방법 및 기준평면을 이용한 기판 검사방법
KR101395055B1 (ko) * 2013-05-28 2014-05-14 삼성코닝정밀소재 주식회사 면취 작업대 평탄도 측정 방법
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
KR102147237B1 (ko) * 2013-12-27 2020-08-24 삼성전자주식회사 제어 장치를 서버에 등록하는 방법 및 장치
JP6398927B2 (ja) * 2015-09-18 2018-10-03 信越化学工業株式会社 フォトマスクブランク、その製造方法及びフォトマスク
CN108500826A (zh) * 2017-02-27 2018-09-07 东莞新科技术研究开发有限公司 晶圆背面研磨方法
TWI686763B (zh) * 2018-02-14 2020-03-01 德德知通股份有限公司 透過網路進行商標電子延展申請的系統、伺服端計算機裝置及計算機可讀取的儲存媒體
NL2027098B1 (en) * 2020-01-16 2021-10-14 Asml Netherlands Bv Pellicle membrane for a lithographic apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004046259A (ja) * 2001-05-31 2004-02-12 Toshiba Corp マスク基板の検査方法、露光マスクの製造方法および半導体装置の製造方法
US6727565B2 (en) 2001-05-31 2004-04-27 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2678942B2 (ja) * 1989-05-18 1997-11-19 東芝機械株式会社 パターンの描画または検査方法
JP3071362B2 (ja) * 1994-07-15 2000-07-31 信越化学工業株式会社 ＡｒＦエキシマレーザリソグラフィー用合成石英マスク基板およびその製造方法
JPH08264431A (ja) * 1995-03-28 1996-10-11 Canon Inc 走査投影露光装置
JP3427141B2 (ja) * 1995-07-18 2003-07-14 株式会社ニコン パターン位置測定方法及び装置
JP2002169265A (ja) * 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP3572053B2 (ja) * 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
JP2003081654A (ja) * 2001-09-06 2003-03-19 Toshiba Ceramics Co Ltd 合成石英ガラスおよびその製造方法
US7056623B2 (en) * 2002-01-24 2006-06-06 Toppan Photomasks, Inc. Photomask and method for manufacturing the same
JP4158885B2 (ja) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法
JPWO2004083961A1 (ja) * 2003-03-20 2006-06-22 Hoya株式会社 レチクル用基板およびその製造方法、並びにマスクブランクおよびその製造方法
US7691279B2 (en) * 2003-03-27 2010-04-06 Hoya Corporation Method of producing a glass substrate for a mask blank and method of producing a mask blank
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004046259A (ja) * 2001-05-31 2004-02-12 Toshiba Corp マスク基板の検査方法、露光マスクの製造方法および半導体装置の製造方法
US6727565B2 (en) 2001-05-31 2004-04-27 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server

Also Published As

Publication number Publication date
CN1862376A (zh) 2006-11-15
US8026025B2 (en) 2011-09-27
CN1862376B (zh) 2011-05-04
TW200702905A (en) 2007-01-16
US20060194126A1 (en) 2006-08-31
US7901840B2 (en) 2011-03-08
TWI454835B (zh) 2014-10-01
DE102006008734A1 (de) 2006-09-28
KR20060094888A (ko) 2006-08-30
JP2006235321A (ja) 2006-09-07
JP5153998B2 (ja) 2013-02-27
US20110027701A1 (en) 2011-02-03

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