CN1862376B - 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法 - Google Patents

掩模坯料及其透明基片的制造方法,曝光掩模的制造方法 Download PDF

Info

Publication number
CN1862376B
CN1862376B CN2006100514335A CN200610051433A CN1862376B CN 1862376 B CN1862376 B CN 1862376B CN 2006100514335 A CN2006100514335 A CN 2006100514335A CN 200610051433 A CN200610051433 A CN 200610051433A CN 1862376 B CN1862376 B CN 1862376B
Authority
CN
China
Prior art keywords
transparent substrate
mask
flatness
shape information
surface shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006100514335A
Other languages
English (en)
Chinese (zh)
Other versions
CN1862376A (zh
Inventor
田边胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN1862376A publication Critical patent/CN1862376A/zh
Application granted granted Critical
Publication of CN1862376B publication Critical patent/CN1862376B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2006100514335A 2005-02-25 2006-02-24 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法 Expired - Fee Related CN1862376B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP200550936 2005-02-25
JP2005-50936 2005-02-25
JP2005050936A JP5153998B2 (ja) 2005-02-25 2005-02-25 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN1862376A CN1862376A (zh) 2006-11-15
CN1862376B true CN1862376B (zh) 2011-05-04

Family

ID=36932293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006100514335A Expired - Fee Related CN1862376B (zh) 2005-02-25 2006-02-24 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法

Country Status (6)

Country Link
US (2) US7901840B2 (enExample)
JP (1) JP5153998B2 (enExample)
KR (1) KR101170851B1 (enExample)
CN (1) CN1862376B (enExample)
DE (1) DE102006008734A1 (enExample)
TW (1) TWI454835B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4856798B2 (ja) * 2006-10-18 2012-01-18 Ｈｏｙａ株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法
JP5304644B2 (ja) * 2007-05-09 2013-10-02 株式会社ニコン フォトマスク用基板、フォトマスク用基板の成形部材、フォトマスク用基板の製造方法、フォトマスク、およびフォトマスクを用いた露光方法
JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
CN102187275B (zh) 2008-11-26 2013-09-04 Hoya株式会社 掩模板用基板、掩模板用基板组及半导体器件的制造方法
JP4728414B2 (ja) 2009-03-25 2011-07-20 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
FR2955654B1 (fr) * 2010-01-25 2012-03-30 Soitec Silicon Insulator Technologies Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches
JP5683930B2 (ja) * 2010-01-29 2015-03-11 Hoya株式会社 マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法
KR101447063B1 (ko) * 2010-03-30 2014-10-06 호야 가부시키가이샤 마스크 블랭크용 기판의 제조방법, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
EP2434345B1 (en) * 2010-09-27 2013-07-03 Imec Method and system for evaluating euv mask flatness
JP5823339B2 (ja) * 2011-04-12 2015-11-25 Hoya株式会社 フォトマスク用基板、フォトマスク及びパターン転写方法
JP5937873B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP5688564B2 (ja) * 2011-06-20 2015-03-25 パナソニックＩｐマネジメント株式会社 電子部品実装用装置および電子部品実装用の作業実行方法
KR101447968B1 (ko) * 2013-04-16 2014-10-13 주식회사 고영테크놀러지 기판 검사를 위한 기준평면 설정방법 및 기준평면을 이용한 기판 검사방법
KR101395055B1 (ko) * 2013-05-28 2014-05-14 삼성코닝정밀소재 주식회사 면취 작업대 평탄도 측정 방법
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
KR102147237B1 (ko) * 2013-12-27 2020-08-24 삼성전자주식회사 제어 장치를 서버에 등록하는 방법 및 장치
JP6398927B2 (ja) * 2015-09-18 2018-10-03 信越化学工業株式会社 フォトマスクブランク、その製造方法及びフォトマスク
CN108500826A (zh) * 2017-02-27 2018-09-07 东莞新科技术研究开发有限公司 晶圆背面研磨方法
TWI686763B (zh) * 2018-02-14 2020-03-01 德德知通股份有限公司 透過網路進行商標電子延展申請的系統、伺服端計算機裝置及計算機可讀取的儲存媒體
NL2027098B1 (en) * 2020-01-16 2021-10-14 Asml Netherlands Bv Pellicle membrane for a lithographic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727565B2 (en) * 2001-05-31 2004-04-27 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
US6740208B2 (en) * 2000-12-01 2004-05-25 Hoya Corporation Photo mask blank and method of manufacturing the same
CN1653392A (zh) * 2002-01-24 2005-08-10 杜邦光掩公司 光掩模及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2678942B2 (ja) * 1989-05-18 1997-11-19 東芝機械株式会社 パターンの描画または検査方法
JP3071362B2 (ja) * 1994-07-15 2000-07-31 信越化学工業株式会社 ＡｒＦエキシマレーザリソグラフィー用合成石英マスク基板およびその製造方法
JPH08264431A (ja) * 1995-03-28 1996-10-11 Canon Inc 走査投影露光装置
JP3427141B2 (ja) * 1995-07-18 2003-07-14 株式会社ニコン パターン位置測定方法及び装置
JP3947154B2 (ja) * 2001-05-31 2007-07-18 株式会社東芝 マスク基板情報生成方法およびマスク基板の製造方法
JP3572053B2 (ja) * 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
JP2003081654A (ja) * 2001-09-06 2003-03-19 Toshiba Ceramics Co Ltd 合成石英ガラスおよびその製造方法
JP4158885B2 (ja) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法
JPWO2004083961A1 (ja) * 2003-03-20 2006-06-22 Hoya株式会社 レチクル用基板およびその製造方法、並びにマスクブランクおよびその製造方法
US7691279B2 (en) * 2003-03-27 2010-04-06 Hoya Corporation Method of producing a glass substrate for a mask blank and method of producing a mask blank
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740208B2 (en) * 2000-12-01 2004-05-25 Hoya Corporation Photo mask blank and method of manufacturing the same
US6727565B2 (en) * 2001-05-31 2004-04-27 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
CN1653392A (zh) * 2002-01-24 2005-08-10 杜邦光掩公司 光掩模及其制备方法

Also Published As

Publication number Publication date
CN1862376A (zh) 2006-11-15
US8026025B2 (en) 2011-09-27
KR101170851B1 (ko) 2012-08-02
TW200702905A (en) 2007-01-16
US20060194126A1 (en) 2006-08-31
US7901840B2 (en) 2011-03-08
TWI454835B (zh) 2014-10-01
DE102006008734A1 (de) 2006-09-28
KR20060094888A (ko) 2006-08-30
JP2006235321A (ja) 2006-09-07
JP5153998B2 (ja) 2013-02-27
US20110027701A1 (en) 2011-02-03

Similar Documents

Publication Publication Date Title
US8026025B2 (en) Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method
JP5683930B2 (ja) マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法
KR101746094B1 (ko) 마스크 블랭크의 정보기록방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
WO2002041380A1 (fr) Procede d'evaluation de la forme d'une plaquette, dispositif et procede de fabrication du dispositif, plaquette et procede de selection de plaquette
TWI455180B (zh) 遮罩坯料基板、遮罩坯料、曝光遮罩、遮罩坯料基板的製造方法、遮罩坯料之製造方法、曝光遮罩之製造方法及半導體裝置之製造方法
CN102246269B (zh) 反射型掩模用低膨胀玻璃基板及其加工方法
WO2015146140A1 (ja) Ｅｕｖマスクの位相欠陥評価方法、ｅｕｖマスクの製造方法、ｅｕｖマスクブランク及びｅｕｖマスク
JP3673263B2 (ja) 露光マスク基板製造方法、露光マスク製造方法、及び半導体装置製造方法
CN1902501B (zh) 校准计量工具的方法和装置
JP6277645B2 (ja) パターン位置計測方法、パターン位置計測装置、及びフォトマスク
US7419748B1 (en) Photomask with reduced electrostatic discharge defects
JP6599493B2 (ja) マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法
CN101004554A (zh) 曝光机机差的测量方法
JP2011175279A (ja) マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
JP4968721B2 (ja) 平坦度測定装置較正用基準プレート
KR20230127786A (ko) 반도체 소자 제조 방법
JPH01111346A (ja) 検査用ウエハ及びその製作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110504