KR100604214B1 - 포토마스크 블랭크용 기판의 선정방법 - Google Patents
포토마스크 블랭크용 기판의 선정방법 Download PDFInfo
- Publication number
- KR100604214B1 KR100604214B1 KR1020040057850A KR20040057850A KR100604214B1 KR 100604214 B1 KR100604214 B1 KR 100604214B1 KR 1020040057850 A KR1020040057850 A KR 1020040057850A KR 20040057850 A KR20040057850 A KR 20040057850A KR 100604214 B1 KR100604214 B1 KR 100604214B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- shape
- photomask
- height
- film
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (2)
- 한 변의 길이가 6인치 이상인 사각형인 포토마스크 블랭크용 기판 선정 방법에 있어서, 그 길이방향 양단에서 2mm의 에지부를 제외하고, 마스크 패턴이 형성될 기판 상면의 외주연을 따라 한 쌍의 대향하는 변의 각각의 내측으로 2 내지 10mm 뻗는 한 쌍의 띠 형상 영역이 구비되고,수평 및 수직방향에서 0.05 내지 0.35mm의 간격으로 기판 상면의 띠 형상 영역을 위한 최소자승평면으로부터 띠 형상 영역까지의 높이를 측정하는 단계; 및허용가능한 표면 형상을 갖는 기판으로서, 모든 측정 지점에서의 높이에 대한 최대값과 최소값간의 차이가 0.5㎛ 이하인 기판을 선택하는 단계를 포함하는 것을 특징으로 하는 포토마스크 블랭크용 기판 선정 방법.
- 한 변의 길이가 6인치 이상인 사각형인 포토마스크 블랭크용 기판 선정 방법에 있어서, 마스크 패턴이 형성될 기판 상면의 외주연을 따라 각각의 변의 내부에 2 내지 10mm 뻗는 사각 링 형상 영역이 구비되고,수평 및 수직방향에서 0.05 내지 0.35mm의 간격으로 기판 상면의 사각 링 형상 영역을 위한 최소자승평면으로부터 사각 링 형상 영역까지의 높이를 측정하는 단계; 및허용가능한 표면 형상을 갖는 기판으로서, 모든 측정 지점에서의 높이에 대한 최대값과 최소값간의 차이가 0.5㎛ 이하인 기판을 선택하는 단계를 포함하는 것을 특징으로 하는 포토마스크 블랭크용 기판 선정 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003280463A JP2005043836A (ja) | 2003-07-25 | 2003-07-25 | フォトマスクブランク用基板の選定方法 |
JPJP-P-2003-00280463 | 2003-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050012687A KR20050012687A (ko) | 2005-02-02 |
KR100604214B1 true KR100604214B1 (ko) | 2006-07-24 |
Family
ID=34074780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040057850A KR100604214B1 (ko) | 2003-07-25 | 2004-07-23 | 포토마스크 블랭크용 기판의 선정방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7329475B2 (ko) |
JP (1) | JP2005043836A (ko) |
KR (1) | KR100604214B1 (ko) |
DE (1) | DE102004035559B4 (ko) |
TW (1) | TWI336023B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4232018B2 (ja) * | 2003-07-25 | 2009-03-04 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
JP4314462B2 (ja) * | 2003-07-25 | 2009-08-19 | 信越化学工業株式会社 | フォトマスクブランク用基板の製造方法 |
JP4488822B2 (ja) * | 2004-07-27 | 2010-06-23 | 株式会社東芝 | 露光用マスクの製造方法、露光装置、半導体装置の製造方法およびマスクブランクス製品 |
JP5222660B2 (ja) * | 2008-08-07 | 2013-06-26 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 |
JP4971278B2 (ja) * | 2008-09-25 | 2012-07-11 | 信越化学工業株式会社 | フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法 |
JP4728414B2 (ja) | 2009-03-25 | 2011-07-20 | Hoya株式会社 | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 |
MY155168A (en) * | 2009-12-11 | 2015-09-15 | Shinetsu Chemical Co | Photomask-forming glass substrate and making method |
JP5637062B2 (ja) * | 2010-05-24 | 2014-12-10 | 信越化学工業株式会社 | 合成石英ガラス基板及びその製造方法 |
JP5937409B2 (ja) * | 2011-04-13 | 2016-06-22 | Hoya株式会社 | フォトマスク用基板、フォトマスク、フォトマスクの製造方法、及びパターン転写方法 |
JP4819191B2 (ja) * | 2011-04-14 | 2011-11-24 | Hoya株式会社 | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 |
US8601409B1 (en) * | 2012-07-12 | 2013-12-03 | Taiwan Semiconductor Manufacturing Co, Ltd. | Compression method and system for use with multi-patterning |
WO2024174200A1 (zh) * | 2023-02-24 | 2024-08-29 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板和掩膜版 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332480A (ja) * | 2000-05-24 | 2001-11-30 | Canon Inc | 原版チャック、該原版チャックを備えた露光装置および半導体デバイス製造方法 |
JP4196675B2 (ja) | 2001-02-13 | 2008-12-17 | 株式会社ニコン | 保持装置、保持方法、露光装置、およびデバイス製造方法 |
JP3627805B2 (ja) * | 2001-04-20 | 2005-03-09 | 信越化学工業株式会社 | フォトマスク用ガラス基板及びその製造方法 |
JP3572053B2 (ja) * | 2001-05-31 | 2004-09-29 | 株式会社東芝 | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー |
US6537844B1 (en) * | 2001-05-31 | 2003-03-25 | Kabushiki Kaisha Toshiba | Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server |
JP4561950B2 (ja) * | 2001-08-08 | 2010-10-13 | 信越化学工業株式会社 | 角形基板 |
JP3450848B2 (ja) * | 2002-08-19 | 2003-09-29 | Hoya株式会社 | フォトマスクブランク、フォトマスクブランク用ガラス基板及びフォトマスク |
JPWO2004083961A1 (ja) * | 2003-03-20 | 2006-06-22 | Hoya株式会社 | レチクル用基板およびその製造方法、並びにマスクブランクおよびその製造方法 |
JP4232018B2 (ja) | 2003-07-25 | 2009-03-04 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
JP4314462B2 (ja) | 2003-07-25 | 2009-08-19 | 信越化学工業株式会社 | フォトマスクブランク用基板の製造方法 |
TWI329779B (en) | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
-
2003
- 2003-07-25 JP JP2003280463A patent/JP2005043836A/ja active Pending
-
2004
- 2004-07-20 TW TW093121636A patent/TWI336023B/zh active
- 2004-07-22 DE DE102004035559.2A patent/DE102004035559B4/de not_active Expired - Lifetime
- 2004-07-23 US US10/896,968 patent/US7329475B2/en active Active
- 2004-07-23 KR KR1020040057850A patent/KR100604214B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2005043836A (ja) | 2005-02-17 |
TWI336023B (en) | 2011-01-11 |
DE102004035559B4 (de) | 2016-04-28 |
US7329475B2 (en) | 2008-02-12 |
US20050019676A1 (en) | 2005-01-27 |
TW200510919A (en) | 2005-03-16 |
KR20050012687A (ko) | 2005-02-02 |
DE102004035559A1 (de) | 2005-03-24 |
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