JP5152137B2 - シリコンエピタキシャルウェーハの製造方法 - Google Patents

シリコンエピタキシャルウェーハの製造方法 Download PDF

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Publication number
JP5152137B2
JP5152137B2 JP2009224554A JP2009224554A JP5152137B2 JP 5152137 B2 JP5152137 B2 JP 5152137B2 JP 2009224554 A JP2009224554 A JP 2009224554A JP 2009224554 A JP2009224554 A JP 2009224554A JP 5152137 B2 JP5152137 B2 JP 5152137B2
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single crystal
silicon single
silicon
thin film
crystal thin
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Japanese (ja)
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JP2011073900A5 (https=
JP2011073900A (ja
Inventor
康 水澤
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2009224554A 2009-09-29 2009-09-29 シリコンエピタキシャルウェーハの製造方法 Active JP5152137B2 (ja)

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JP2009224554A JP5152137B2 (ja) 2009-09-29 2009-09-29 シリコンエピタキシャルウェーハの製造方法

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JP2009224554A JP5152137B2 (ja) 2009-09-29 2009-09-29 シリコンエピタキシャルウェーハの製造方法

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JP2011073900A JP2011073900A (ja) 2011-04-14
JP2011073900A5 JP2011073900A5 (https=) 2012-01-12
JP5152137B2 true JP5152137B2 (ja) 2013-02-27

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6032186B2 (ja) * 2013-11-29 2016-11-24 信越半導体株式会社 シリコンエピタキシャルウエーハの評価方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693433B2 (ja) * 1987-04-15 1994-11-16 日本電気株式会社 半導体装置用基板
JPH09199381A (ja) * 1996-01-12 1997-07-31 Toshiba Ceramics Co Ltd エピタキシャルウエハ用シリコン基板及びその製造法
JP4708697B2 (ja) * 2002-11-11 2011-06-22 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ
JP2007070131A (ja) * 2005-09-05 2007-03-22 Sumco Corp エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ

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