JP5151651B2 - 酸素イオン注入装置 - Google Patents

酸素イオン注入装置 Download PDF

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Publication number
JP5151651B2
JP5151651B2 JP2008110807A JP2008110807A JP5151651B2 JP 5151651 B2 JP5151651 B2 JP 5151651B2 JP 2008110807 A JP2008110807 A JP 2008110807A JP 2008110807 A JP2008110807 A JP 2008110807A JP 5151651 B2 JP5151651 B2 JP 5151651B2
Authority
JP
Japan
Prior art keywords
wafer
lamp
lamp group
oxygen ion
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008110807A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009266391A (ja
JP2009266391A5 (https=
Inventor
嘉郎 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2008110807A priority Critical patent/JP5151651B2/ja
Priority to US12/402,584 priority patent/US8293070B2/en
Publication of JP2009266391A publication Critical patent/JP2009266391A/ja
Publication of JP2009266391A5 publication Critical patent/JP2009266391A5/ja
Application granted granted Critical
Publication of JP5151651B2 publication Critical patent/JP5151651B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2008110807A 2008-04-22 2008-04-22 酸素イオン注入装置 Expired - Fee Related JP5151651B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008110807A JP5151651B2 (ja) 2008-04-22 2008-04-22 酸素イオン注入装置
US12/402,584 US8293070B2 (en) 2008-04-22 2009-03-12 Oxygen ion implantation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008110807A JP5151651B2 (ja) 2008-04-22 2008-04-22 酸素イオン注入装置

Publications (3)

Publication Number Publication Date
JP2009266391A JP2009266391A (ja) 2009-11-12
JP2009266391A5 JP2009266391A5 (https=) 2011-05-12
JP5151651B2 true JP5151651B2 (ja) 2013-02-27

Family

ID=41200047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008110807A Expired - Fee Related JP5151651B2 (ja) 2008-04-22 2008-04-22 酸素イオン注入装置

Country Status (2)

Country Link
US (1) US8293070B2 (https=)
JP (1) JP5151651B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151651B2 (ja) * 2008-04-22 2013-02-27 株式会社Ｓｕｍｃｏ 酸素イオン注入装置
JP2010040593A (ja) * 2008-07-31 2010-02-18 Sumco Corp イオン注入装置及び方法
US9685303B2 (en) * 2015-05-08 2017-06-20 Varian Semiconductor Equipment Associates, Inc. Apparatus for heating and processing a substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823156A (ja) * 1981-07-31 1983-02-10 Nec Corp イオン注入装置
JPH0728692Y2 (ja) * 1988-06-25 1995-06-28 日新電機株式会社 ウエハディスク
US5207835A (en) * 1989-02-28 1993-05-04 Moore Epitaxial, Inc. High capacity epitaxial reactor
JPH0499274A (ja) * 1990-08-10 1992-03-31 Nec Corp イオン注入装置
JPH05190133A (ja) * 1992-01-14 1993-07-30 Nec Corp イオン注入装置
JPH0831368A (ja) * 1994-07-21 1996-02-02 Nippon Precision Circuits Kk イオン注入装置
JP3288554B2 (ja) * 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
US5930643A (en) 1997-12-22 1999-07-27 International Business Machines Corporation Defect induced buried oxide (DIBOX) for throughput SOI
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
JP2004296558A (ja) * 2003-03-26 2004-10-21 Osaka Prefecture 絶縁層埋め込み型単結晶炭化シリコン基板の製造方法及びその製造装置
US7812325B2 (en) * 2006-09-28 2010-10-12 Varian Semiconductor Equipment Associates, Inc. Implanting with improved uniformity and angle control on tilted wafers
JP5151651B2 (ja) * 2008-04-22 2013-02-27 株式会社Ｓｕｍｃｏ 酸素イオン注入装置
JP2010199569A (ja) * 2009-02-02 2010-09-09 Sumco Corp Ｓｉｍｏｘウェーハの製造方法

Also Published As

Publication number Publication date
JP2009266391A (ja) 2009-11-12
US20090260570A1 (en) 2009-10-22
US8293070B2 (en) 2012-10-23

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