CN106133873A - 在半导体腔室中的晶片旋转 - Google Patents

在半导体腔室中的晶片旋转 Download PDF

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CN106133873A
CN106133873A CN201580013445.6A CN201580013445A CN106133873A CN 106133873 A CN106133873 A CN 106133873A CN 201580013445 A CN201580013445 A CN 201580013445A CN 106133873 A CN106133873 A CN 106133873A
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substrate
pedestal
edge ring
rotating member
film
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CN106133873B (zh
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G·巴拉苏布拉马尼恩
J·C·罗查-阿尔瓦雷斯
R·萨卡拉克利施纳
R·金
D·R·杜鲍斯
K·H·弗劳德
A·K·班塞尔
T·A·恩古耶
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Applied Materials Inc
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract

提供一种用于处理基板的方法与设备。该设备包括基座与旋转构件，基座与旋转构件可移动地设置在处理腔室内。旋转构件适配成旋转设置在腔室中的基板。在处理期间，基板可由边缘环支撑。边缘环可选择性地啮合基座或旋转构件。在一个实施例中，在沉积工艺期间，边缘环啮合基座，并且在基板的旋转期间，边缘环啮合旋转构件。处理期间的基板的旋转可以是不连续的或连续的。

Description

在半导体腔室中的晶片旋转
背景
技术领域
本发明所述的实施例总体上涉及用于处理基板的设备与方法。更具体地，本发明所述的实施例涉及半导体基板中的基板旋转。
背景技术
半导体器件性能由各种因素所决定。一个重要因素是沉积在基板上的膜的均匀性。期望均匀地沉积膜以使得跨基板表面最小化厚度变化。例如，可能期望形成具有跨基板表面的小于约5％的厚度变化的膜。
然而，膜均匀性可能受若干因素不利地影响，这些因素包括加热器温度、腔室几何形状、工艺气流非均匀性，及等离子体非均匀性等。这些因素可能导致非均匀膜沉积在基板表面上，从而可能最终减低器件性能。
因此，在本领域中存在对改善半导体处理中的膜均匀性的设备与方法的需要。
发明内容
在一个实施例中，提供一种用于处理基板的设备。该设备包括腔室主体和面板，所述腔室主体和所述面板界定处理容积。基座可移动地设置于处理容积内并且旋转构件也可移动地设置于所述处理容积内。可从基座径向向外设置旋转构件。可经配置以支撑基板的边缘环可经适配成选择性地与基座或旋转构件接合。
在另一个实施例中，提供一种处理基板的方法。该方法包括将膜的第一部分沉积在第一位置中的基板上。接着可停止膜的第一部分的沉积并可将基板从第一位置旋转到不同于该第一位置的第二位置。膜的第二部分可接着沉积在第二位置中的基板上。
在又另一个实施例中，提供一种处理基板的方法。该方法包括：将基板定位在设置在处理腔室中的边缘环上；使边缘环与基座接触；举升基座到处理位置；以及将膜沉积在基板上。边缘环可与旋转构件接触，可从处理位置使基座下降，以及可旋转旋转构件。
附图说明
因此，为了详细理解本公开的上述特征的方式，可参考实施例得出上述简要概括的本公开的更具体的描述，实施例中的一些在所附附图中示出。然而，值得注意的是，所附附图只示出本公开的典型实施例，并且因此不被视为对本公开的范围的限制，由于本发明可允许其他等效的实施例。
图1示出根据一个实施例的处理腔室的示意性截面图。
图2A至图2D示出根据一个实施例的各种基板处理步骤期间的图1的处理腔室。
图3A至图3C示出根据一个实施例的各种基板处理步骤期间的图1的处理腔室。
图4示出根据一个实施例的处理腔室的示意性截面图。
图5A至图5F示出根据一个实施例的各种基板处理步骤期间的图4的处理腔室。
为便于理解，在可能的情况下，已使用相同的参考标号指定附图共有的相同元件。可以构想到，一个实施例中的元件与特征可有益地并入其他实施例中而无需进一步的叙述。
具体实施方式
提供一种用于处理基板的方法与设备。该设备包括基座与旋转构件，两者都可移动地设置于处理腔室内。旋转构件经适配成旋转设置于腔室中的基板。在处理期间，基板可由边缘环支撑。边缘环可选择性地啮合基座或旋转构件。在一个实施例中，在沉积工艺期间，边缘环啮合基座，并且在基板的旋转期间，边缘环啮合旋转构件。处理期间的基板的旋转可以是不连续的或连续的。
图1示出处理腔室100的示意性截面图。处理腔室100包括界定处理容积106的腔室主体102与面板104。基座108与旋转构件114设置于处理容积106中。基座108与旋转构件114两者都可移动地设置于腔室100内。气源116与RF电源118也可与腔室100耦接。
处理腔室100可以是等离子体增强化学气相沉积(PECVD)腔室或其他等离子体增强处理腔室。可受益于本文描述的实施例的示例性处理腔室是可从加利福尼亚州圣克拉拉的应用材料有限公司购买到的系列的启用PECVD的腔室。可以预期，来自其他制造商的其他类似装备的处理腔室也可能受益于本文描述的实施例。
腔室主体102包括基部128与开口124。开口124可形成在腔室主体102中以允许基板110进出于处理容积106。狭缝阀(未示出)可与邻近开口124的腔室主体102耦接以密封处理容积106。腔室主体102也可与邻近开口124的传送腔室126或平台耦接。在操作中，机械叶片(未示出)或基板搬运设备可将基板110从传送腔室126传送到处理腔室100，使得基板110可被处理。可由机械叶片将经处理的基板110从处理腔室100传送通过开口124以用于后续的处理操作。
面板104与气源116和RF电源118耦接。面板104由导电材料(诸如，铝)形成。气源116配置成将处理气体经由面板104传递到处理容积106。适合的处理气体的示例包括第三族、第四族、第五族前体，及以上各者的组合。气源116也可将运载气体与惰性气体传递到处理容积106。RF电源118配置成将RF能传递到面板104。RF能(例如13.56MHz)将从气源116提供的处理气体激发以形成处理容积106中的等离子体。在一个实施例中，RF电源118可配置成在处理容积106中形成电容性耦合的等离子体。在此实施例中，面板104可被供电而基座108可接地。在另一个示例中，面板104可接地而基座108可被供电。
基座108包括基板支撑表面140及杆138。基座可由金属或陶瓷材料(例如，铝或氮化铝)形成。在一个实施例中，基板支撑表面140可配置成在处理期间支撑基板110。在另一个实施例中，基板支撑表面140可配置成在处理期间支撑边缘环112。杆138延伸通过腔室主体102的基部128并且可与电源122耦接，电源122配置成沿着轴148轴向移动基座108。加热器136也可设置于基座108内且加热器136可配置成在处理期间加热基板110。虽然被示为在升起的处理位置中，但是可下降基座108以通过开口124接收基板110。因此，当基座108处于下降的位置时，基板支撑表面140可与开口124共面或略微低于开口124。
一个或多个升举销130可与基座108耦接。升举销130可由具有与形成基座108的材料的热膨胀系数相似的热膨胀系数的陶瓷材料形成。升举销130配置成延伸通过基座108而到达基板支撑表面140上方以当基座108处于下降的位置时接收来自机械叶片的基板110。
升举销130包括接触构件132与致动器134。在操作中，当基座108处于下降的位置时，致动器134可啮合旋转构件114并导致接触构件132延伸通过基座108而超过基板支撑表面140(在图2A中更加详细地示出)。在一个实施例中，当基座108处于上升的位置时，致动器134可被配重以将接触构件132收缩到基板支撑表面140下方。
如前所述，旋转构件114可移动地设置于腔室100中。类似于基座108，旋转构件114可配置成沿着轴148轴向移动。旋转构件114也可绕着轴148旋转。例如，旋转构件114可绕着基座108的杆138旋转。旋转构件114可延伸通过邻近杆138的腔室主体102的基部128。电机120可与旋转构件114耦接且电机128可配置成轴向移动旋转构件114并且绕着轴148旋转旋转构件114。在一个实施例中，电机120可以是旋转伺服电机等。
旋转构件114可包括从旋转构件114延伸的一个或多个延伸部146。一个或多个延伸部146可以彼此分离且可以被间隔开以允许机械叶片在基座108处于下降的位置时在相邻延伸部146之间通过。延伸部146配置成使得从基座108径向向外设置延伸部146。在一个实施例中，旋转构件114可包括三个延伸部146。在此实施例中，沿着包括该三个延伸部146的假定圆周，延伸部146可以是彼此等间距的。然而，可以构想到，旋转构件114可包括更多或更少数量的延伸部。
旋转构件114与延伸部146可由陶瓷材料(例如，氮化硅)或石英材料形成。延伸部146可配置成接触边缘环112。边缘环112可由陶瓷材料形成并且可具有环形形状。边缘环112可配置成啮合基座108的基板支撑表面140或旋转构件114的延伸部146。在一个实施例中，基座108可具有沿着基板支撑表面140的圆周形成的环形突出部147。当基座108处于处理位置时，环形突出部147可配置成与边缘环112耦接并且支撑边缘环112。在此实施例中，边缘环112的底表面142可接触环形突出部147或基板支撑表面140。基板100可由边缘环112的顶表面144或基板支撑表面140，或边缘环112与基板支撑表面140两者的组合支撑。
边缘环112尺寸设定成从基座108的基板支撑表面140径向向外延伸。如此一来，边缘环112的直径可大于基板支撑表面140的直径。边缘环112也可从环形突出部147径向向外延伸。因此，径向延伸超过基座108的边缘环112的底表面142的部分可配置成啮合旋转构件114的一个或多个延伸部146。
在操作中，可上升旋转构件114使得延伸部146接触边缘环112以从基座108上升边缘环112。因此，可将设置在边缘环112上的基板110从基板支撑表面140升起。或者，旋转构件114可保持静止而基座108可从处理位置下降以使得边缘环112啮合延伸部146。在这两个示例中，边缘环112以及支撑在边缘环112上的基板110可以与基座108间隔开。从基座108升起边缘环112使旋转构件114能够绕着轴148相对于基座108旋转基板110。旋转构件114的旋转可以是不连续的或连续的，并且旋转构件114的竖直运动可用于在边缘环112与基座108之间产生具有一距离的间隙。旋转构件114或基座108的定位可用于控制间隙距离以影响各种工艺的沉积特性。
图2A至图2D示出各种基板110处理操作期间的图1的处理腔室100。气源116、RF电源、电机120及电源122未示于图2A至图2D中以便不模糊所述的实施例，然而，可以构想到，这些元件包含于图2A-2D的实施例中。图2A示出机械叶片150将基板110传递到处理腔室100。机械叶片150从传送腔室126延伸通过开口124并将基板110定位在处理容积106中。旋转构件114的延伸部146可定位成允许机械叶片150无阻碍地通过。升举销130的接触构件132被示为延伸到基板支撑表面140上方以接收来自机械叶片150的基板110。升举销130的致动器134可接触旋转构件114并导致接触构件132延伸通过基座108而到达基板支撑表面140上方。在此实施例中，当基座108与旋转构件114靠近时，旋转构件114可与升举销130对准以使升举销130能够致动。
在机械叶片150将基板110放置在升举销130上后，机械叶片150可从处理容积106缩回。图2B示出基座108升至处理位置。旋转构件114可绕轴148旋转至适于在后续操作中举升基板110的位置。如图所示，升举销130从旋转构件114松开，并且基板110停留在边缘环112上。在一个实施例中，基板110也可接触基板支撑表面140。在处理位置中，可在期望的持续时间内处理基板110。例如，基板可在处理位置中作部分处理或全部处理。
图2C示出用于从基座108举升基板110的操作。在此操作期间，基座108从处理位置下降以使得边缘环112接触延伸部146。基座108可进一步下降以将边缘环112/基板110与基板支撑表面140间隔开。基座108可下降足够大的距离以将边缘环112啮合在延伸部146上，而避免升举销130与旋转构件114之间的接触。如此一来，基板完全从基座108解耦(decouple)，并且延伸部146单独支撑边缘环112，基板110设置在该边缘环112上。
图2D示出基板110经由旋转构件114旋转。如前所述，边缘环112从基座108解耦且旋转构件114可绕着轴148旋转以旋转基板110。基板110的旋转改变基板110相对于面板104与基座108的位置。在一个实施例中，旋转构件114可绕轴148旋转约1°与约360°之间，例如约30°与约270°之间，例如约90°与约180°之间。在关于图2A-2D所述的实施例中，旋转构件114可在整个所述的操作中，维持在处理容积106内的单一高度。
基板110的处理可通过重复图2B-2D所述的实施例进行，直到满意的膜已形成在基板上。可接着使用关于图2A所述的实施例从腔室100移除基板110。以上实施例提供处理期间的基板110的不连续旋转。在一个实施例中，基板110可旋转约90°并经处理四次以使得当基板110处于相对于面板104的四个不同定向时，在基板110上执行沉积。
图3A-3C示出各种基板处理操作期间的图1的处理腔室100。在关于图3A-3C所述的实施例中，在膜的沉积期间，基板110连续旋转。图3A与3B分别相似于图2A与2B，图2A与2B的描述可在上文找到。在图3B中，延伸部146可与边缘环112接触或可不与边缘环112接触。然而，边缘环112维持由基座108支撑。
基座108从图3所示的举升的处理位置下降一距离302以使得延伸部146接触并支撑边缘环112。因此，基板110与边缘环112从基板支撑表面140解耦。距离302也可界定基板支撑表面140与边缘环112的底表面之间的间隔关系。在一个实施例中，距离302可以在约0.01英寸至约1英寸之间。或者，距离302可界定基板110与基板支撑表面140之间的间隔关系。
下降基座108并将边缘环112/基板110解耦使旋转构件114能够绕轴148旋转边缘环112/基板110。当旋转构件114转动边缘环112/基板110时，可进行在基板110上的膜沉积。在沉积工艺的整个持续时间内或沉积工艺的部分持续旋转构件114的旋转。边缘环112/基板110之间的间隔关系不仅允许沉积期间的旋转，而且还维持由于基板支撑表面140与基板110之间的近距离，基座108加热基板110的能力。
图4示出处理腔室400的示意性截面图。腔室400可相似于关于图1所述的腔室100，且可以构想到，关于腔室400所述的实施例可用于腔室100中，反之亦然。例如，虽然未在图4中示出，腔室100的升举销130可用于腔室400中。腔室400可另外包括遮蔽环402、电极404及衬垫414。遮蔽环402可由与用于形成边缘环112的材料相似的陶瓷材料形成。根据基座108与旋转构件114的位置，遮蔽环402可设置在边缘环112的顶表面144或电极延伸部406上。遮蔽环402可以是环形形状，并且遮蔽环402的部分可延伸过基板110的边缘以防止基板110的边缘附近的沉积。在一个实施例中，遮蔽环402是可选择的。
电极404可耦接到腔室主体102且邻近面板104，并且配置成影响形成在处理容积106中的基板110上的等离子体。电极404可产生影响等离子体的形状、密度及各种其他特性的电流以影响基板110上的膜沉积。电极延伸部406可从腔室主体102径向向内延伸并且配置成在遮蔽环未被边缘环112支撑时支撑遮蔽环402(见图5A-5B)。
衬垫414包括与腔室主体102的基部128耦接的陶瓷板。衬垫414可用于防止RF耦接至基部128并且也可改善在腔室400上执行的清洗与维护程序的效率。衬垫端口416可形成为通过衬垫414。泵412也可与腔室400耦接以使得泵412与处理容积416流体地连通。泵412可经由衬垫端口416排空处理容积106并在腔室400中产生真空。
处理容积106的上部区域408可大约界定为基板支撑表面140与面板104之间的距离。上部区域408距离可以介于约0.2英寸与3英寸之间，诸如介于0.75英寸与1.25英寸之间，例如1英寸。处理容积106的下部区域410可大约界定为基板支撑表面140与基部128或衬垫414之间的距离。下部区域410距离可介于约1英寸与4英寸之间，诸如介于1.5英寸与2.5英寸之间，例如2英寸。在一个实施例中，下部区域410包括处理容积106的大约50％。
图5A-5F示出各种基板处理操作期间的图4的处理腔室400。气源116、RF电源、电机120及电源122未在图5A-5F中示出以便而不模糊所述的实施例，然而，可以构想到，这些元件包含于图5A-5F的实施例中。此外，升举销130可与基座108耦接，但为求清楚的缘故而未示出。
图5A相似于图2A与3A，可在上文找到图2A和3A的描述。当旋转构件114处于下降的位置时，延伸部146可维持在机械叶片150的移动平面下方以允许将基板110无阻碍地传递到处理容积106。在一个实施例中，在图4与图5A-5F中示出的延伸部146的长度可小于图1、图2A-2D与图3A-3C所示的延伸部146的长度。图5B示出旋转构件114位于略微上升的位置，其中延伸部146接触边缘环112以将基板110举升到基座108上方。
图5C示出基座108与旋转构件114处于举升的处理位置。基座108及旋转构件114可与支撑边缘环112的旋转构件114或支撑边缘环112的基座108一起上升。如图所示，当基板定位在最终处理位置时，边缘环112可设置在基板支撑表面140或环形突出部147上。延伸部146可与边缘环112维持接触，或延伸部146可下降而不与边缘环112接触，但在大部分实施例中，边缘环112将由基座108支撑。随着基板110处于举升的处理位置，可进行膜的至少一部分的沉积。在一个实施例中，可沉积约四分之一的期望的膜厚度。
图5D示出边缘环112/基板110与基座108分离。基座108下降但旋转构件114维持在图5C所示的位置中，或在一个实施例中，可使旋转构件114上升。在这两个实施例的任何一个中，边缘环112/基板110与基板支撑表面140间隔开。
图5E示出由旋转构件114旋转边缘环112/基板110。在边缘环112/基板110与基座间隔开后，旋转构件114可绕轴148旋转。在一个实施例中，旋转构件114可旋转约60°与约120°之间，诸如约90°。
图5F示出上升到处理位置的基座108。如所示，基座108可经举升以接触边缘环112/基板110。可以构想到，旋转构件114也可稍微下降以重新啮合基座与边缘环112/基板110之间的接触。此实施例中，基座108与旋转构件114的位置相似于图5C所示的基座108与旋转构件114的位置。可如以上所述进行膜的部分的沉积。
可重复关于图5D-5F所述的工艺直到达到期望的膜厚度。在一个实施例中，边缘环112/基板110可旋转90°四次，其中在每次旋转之间沉积四分之一的期望的膜厚度。例如，基板110的第二位置可以是从基板110的第一位置旋转约90°。基板110的第三位置可以是从基板110的第二位置旋转约90°。基板110的第四位置可以是从基板110的第三位置旋转约90°。第一位置、第二位置、第三位置与第四位置可互相不同。相信基板110相对于面板104与基座108的旋转可改善跨基板110的表面的沉积膜的厚度均匀性。
在膜已沉积到期望的厚度后，基座108与旋转构件114可共同下降到图5A所示的位置。从此位置，可从腔室400移除基板110，并且可对另一基板重复此过程。图4与图5A-5F所述的旋转构件114可轴向地以及旋转地移动。图5A-5F所述的过程示出不连续的旋转与沉积过程，然而，可以构想到，该沉积与旋转过程可以是连续的，例如，相似于关于图3A-3C所描述的实施例。如本文所使用的，不连续的旋转与沉积过程可定义为：沉积膜的部分、停止沉积并旋转基板，以及在基板被旋转后恢复沉积。在连续的旋转与沉积过程中，当基板正在被旋转的同时，进行基板上的沉积。
本文所述的实施例提供在启用PECVD的腔室中，跨基板的表面的改进的膜厚度均匀性。可以预期，其他类型的半导体处理腔室可受益于本文所述的实施例。基板可由边缘环从基座解耦以允许旋转构件转动处理容积内的边缘环与基板。旋转可以是不连续的或连续的，并且膜沉积可以是不连续的或连续的。本文所述的单独实施例可与其他实施例结合以实现膜厚度均匀性的改善。因此，形成具有改善的膜均匀性分布的膜可提供改善的半导体器件。
虽然前述针对本公开的实施例，但可在不背离本公开的基本范围的情况下设计其他的与进一步的实施例，并且本公开的范围由所附权利要求书确定。

Claims (15)

1.一种用于处理基板的设备，包括：
腔室主体与面板，所述腔室主体与所述面板界定处理容积；
基座，所述基座可移动地设置在所述处理容积内；
旋转构件，所述旋转构件可移动地设置在所述处理容积内且从所述基座径向向外；
边缘环，所述边缘环配置成支撑基板，其中所述边缘环经适配成选择性地与所述基座或所述旋转构件接合。
2.如权利要求1所述的设备，进一步包括可调电极，所述可调电极设置在所述腔室主体上且邻近所述面板。
3.如权利要求2所述的设备，其中所述可调电极进一步包括：
支撑突出部。
4.如权利要求1所述的设备，进一步包括：
遮蔽环，所述遮蔽环经适配成与所述边缘环的顶表面耦接。
5.如权利要求3所述的设备，进一步包括：
遮蔽环，所述遮蔽环经适配成与所述可调电极的所述支撑突出部耦接。
6.如权利要求1所述的设备，进一步包括：
衬垫组件，所述衬垫组件与所述腔室主体的底表面耦接。
7.如权利要求1所述的设备，进一步包括：
多个升举销，所述多个升举销耦接穿过所述基座。
8.如权利要求4所述的设备，其中所述基座、所述旋转构件、所述边缘环，以及所述遮蔽环由具有相似的热膨胀系数的陶瓷材料形成。
9.一种处理基板的方法，包括以下步骤：
将膜的第一部分沉积在处于第一位置中的基板上；
停止所述膜的所述第一部分的沉积；
将所述基板从所述第一位置旋转到不同于所述第一位置的第二位置；以及
将所述膜的第二部分沉积在处于所述第二位置中的所述基板上。
10.如权利要求9所述的方法，进一步包括以下步骤：
停止所述膜的所述第二部分的沉积；
将所述基板从所述第二位置旋转到不同于所述第一位置和所述第二位置的第三位置；
将所述膜的第三部分沉积在处于所述第三位置中的所述基板上；
停止所述膜的所述第三部分的沉积；
将所述基板从所述第三位置旋转到不同于所述第一位置、所述第二位置和所述第三位置的第四位置；
将所述膜的第四部分沉积在处于所述第四位置中的所述基板上。
11.如权利要求9所述的方法，其中所述基板设置在边缘环上。
12.如权利要求11所述的方法，其中所述旋转所述基板的步骤包括以下步骤：
将所述边缘环与旋转构件啮合；
使基座下降而不与所述基板接触；以及
旋转所述旋转构件。
13.如权利要求9所述的方法，其中在沉积所述膜的第一部分以及沉积所述膜的第二部分期间，所述基板设置在基座上。
14.如权利要求9所述的方法，其中在旋转所述基板步骤期间，所述基板设置在边缘环上。
15.一种处理基板的方法，包括以下步骤：
将基板定位在边缘环上，所述边缘环设置在处理腔室中；
使所述边缘环与基座接触；
将所述基座举升到处理位置；
将膜沉积在所述基板上；
使所述边缘环与旋转构件接触并且使所述基座从所述处理位置下降；以及
旋转所述旋转构件。
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