TWI673389B - 在半導體腔室中的晶圓旋轉 - Google Patents

在半導體腔室中的晶圓旋轉 Download PDF

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TWI673389B
TWI673389B TW104106685A TW104106685A TWI673389B TW I673389 B TWI673389 B TW I673389B TW 104106685 A TW104106685 A TW 104106685A TW 104106685 A TW104106685 A TW 104106685A TW I673389 B TWI673389 B TW I673389B
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substrate
base
rotating member
edge ring
processing
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TW201538784A (zh
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巴拉蘇拔馬尼安葛尼斯
羅莎亞凡利斯君卡洛斯
山卡克里西南蘭普拉卡西
金羅伯特
督波斯道爾Ｒ
福洛德可比涵
班莎阿米古莫
阮段安
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美商應用材料股份有限公司
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    • H01L21/02104—Forming layers
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract

提供一種用於處理基板的方法與設備。該設備包括基座與旋轉構件，基座與旋轉構件可移動地設置於處理腔室內。旋轉構件經調整而轉動設置於腔室中的基板。在處理期間，基板可由邊緣環支撐。邊緣環可選擇性地嚙合基座或旋轉構件。在一個實施例中，在沉積過程期間，邊緣環嚙合基座，及在基板旋轉期間，邊緣環嚙合旋轉構件。處理期間的基板旋轉可係不連續或連續的。

Description

在半導體腔室中的晶圓旋轉
本發明所述實施例一般係關於用於處理基板的設備與方法。更具體言之，本發明所述實施例係關於半導體基板中的基板旋轉。
半導體元件效能由各種因素所決定。一個重要因素係沉積在基板上的薄膜之均勻性。均勻地沉積薄膜使得跨基板表面的厚度變化最小化係需要的。例如，可能需要形成具有跨基板表面小於約5%厚度變化的薄膜。
然而，薄膜均勻性可能受若干因素的不良影響，包括加熱器溫度、腔室幾何形狀、處理氣流非均勻性，及電漿非均勻性等。這些因素可能導致非均勻薄膜於基板表面的沉積，而可能最終減低晶片效能。
因此，在所屬領域中對於改善半導體製程中薄膜均勻性的設備與方法係需要的。
在一個實施例中，提供一種用於處理基板的設備。該設備包括腔室主體及面板，腔室主體及面板界定處理空 間。基座可移動地設置於處理空間內及旋轉構件亦可移動地設置於處理空間內。旋轉構件可自基座徑向向外設置。可經配置而支撐基板的邊緣環可經調整而選擇性地與基座或旋轉構件連接。
在另一個實施例中，提供一種處理基板的方法。該方法包括將薄膜的第一部分沉積於第一位置中的基板上。接著可停止薄膜的第一部分之沉積並可將基板從第一位置旋轉到不同於第一位置的第二位置。薄膜的第二部分可接著沉積於第二位置中的基板上。
在又另一個實施例中，提供一種處理基板的方法。該方法將基板定位於設置在處理腔室中的邊緣環上，將邊緣環與基座接觸，舉升基座到處理位置，及將薄膜沉積於基板上。邊緣環可與旋轉構件接觸，可自處理位置將基座下降，及可轉動旋轉構件。
100‧‧‧處理腔室
102‧‧‧腔室主體
104‧‧‧面板
106‧‧‧處理空間
108‧‧‧基座
110‧‧‧基板
112‧‧‧邊緣環
114‧‧‧旋轉構件
116‧‧‧氣源
118‧‧‧RF電源
120‧‧‧馬達
122‧‧‧電源
124‧‧‧開口
126‧‧‧傳送腔室
128‧‧‧基部
130‧‧‧升舉銷
132‧‧‧接觸構件
134‧‧‧致動器
136‧‧‧加熱器
138‧‧‧桿
140‧‧‧基板支撐表面
142‧‧‧底表面
144‧‧‧頂表面
146‧‧‧延伸部
147‧‧‧環狀突出部分
148‧‧‧軸
150‧‧‧機械葉片
302‧‧‧距離
400‧‧‧處理腔室
402‧‧‧遮蔽環
404‧‧‧電極
406‧‧‧電極延伸部
408‧‧‧上部區域
410‧‧‧下部區域
412‧‧‧泵
414‧‧‧襯墊
416‧‧‧襯墊埠
本發明揭露之特徵已簡要概述於前，並在以下有更詳盡之討論，可以藉由參考所附圖式中繪示之本發明實施例以作瞭解。然而，值得注意的是，所附圖式只繪示了本發明揭露的典型實施例，而由於本發明可允許其他等效之實施例，所附圖式並不會視為本發明範圍之限制。
第1圖根據一個實施例繪示處理腔室的概要截面圖。
第2A-2D圖根據一個實施例繪示各式基板處理步驟期間第1圖的處理腔室。
第3A-3C圖根據一個實施例繪示各式基板處理步驟期間第1圖的處理腔室。
第4圖根據一個實施例繪示處理腔室的概要截面圖。
第5A-5F圖根據一個實施例繪示各式基板處理步驟期間第4圖的處理腔室。
為便於理解，在可能的情況下，使用相同的數字編號代表圖示中相同的元件。可以考慮，一個實施例中的元件與特徵可有利地用於其它實施例中而無需贅述。
在一個實施例中，提供用於處理基板的方法與設備。該設備包括基座與旋轉構件，兩者皆可移動地設置於處理腔室內。旋轉構件經調整而旋轉設置於腔室中的基板。在處理期間，基板可由邊緣環支撐。邊緣環可選擇性地嚙合基座或旋轉構件。在一個實施例中，在沉積過程期間，邊緣環嚙合基座，及在基板旋轉期間，邊緣環嚙合旋轉構件。處理期間的基板旋轉可係不連續或連續的。
第1圖繪示處理腔室100的概要截面圖。處理腔室100包括界定處理空間106的腔室主體102與面板104。基座108與旋轉構件114設置於處理空間106中。基座108與旋轉構件114皆可移動地設置於腔室100內。氣源116與RF電源118亦可與腔室100耦接。
處理腔室100可係電漿增強化學氣相沉積(PECVD)腔室或其他電漿增強處理腔室。可受惠於本發明揭露實施例 之示範處理腔室係PRODUCER®系列的PECVD啟用腔室，可自加州聖塔克拉拉的應用材料公司取得(Applied Materials,Inc.,Santa Clara,CA.)。可以預期，來自其他製造商的其他類似裝備之處理腔室亦可能受惠於本發明揭露之實施例。
腔室主體102包括基部128與開口124。開口124可於腔室主體102中形成以允許基板110進出於處理空間106。狹縫閥(未圖示出)可與鄰近於開口124的腔室主體102耦接以密封腔室空間106。腔室主體102亦可與鄰近於開口124的傳送腔室126或平台耦接。在操作中，機械葉片(未圖示出)或基板操縱設備可將基板110從傳送腔室126傳送到處理腔室100，使得基板110可被處理。經處理的基板110可藉由機械葉片而從處理腔室100被傳送到開口124以用於接續的處理操作。
面板104與氣源116及RF電源118耦接。面板104由導電材料形成，如鋁。氣源116經配置而將處理氣體經由面板104傳送到處理空間106。適合的處理氣體示範例包括第三族、第四族、第五族前導物，及以上各者之組合。氣源116亦可將載體氣體與惰性氣體傳送到處理空間106。RF電源118經配置而將RF能傳送到面板104。如13.56MHZ的RF能將氣源116提供的處理氣體激發而形成處理空間106中的電漿。在一個實施例中，RF電源118可經配置而於處理空間106中形成電容性耦接的電漿。在此實施例中，面板104可接電而基座108可接地。在另一個示範例中，面板104可接地而基座108可接電。
基座108包括基座支撐表面140及桿138。基座可由金屬或陶瓷料形成，例如，鋁或氮化鋁。在一個實施例中，基座支撐表面140可經配置而於處理期間支撐基板110。在另一個實施例中，基板支撐表面140可經配置而在處理期間支撐邊緣環112。桿138延伸通過腔室主體102的基部128及可與電源122耦接，電源122經配置而將基座108沿著軸148軸向移動。加熱器136亦可設置於基座108內且加熱器136可經配置而於處理期間加熱基板110。雖然所示係升起的處理位置，但是可下降基座108以接收通過開口124的基板110。因此，當基座108在下降位置時，基板支撐表面140可與開口124共面或略微低於開口124。
一或多個升舉銷130可與基座108耦接。升舉銷130可由具有與形成基座108的材料熱膨脹係數相似的熱膨脹係數之陶瓷材料形成。升舉銷130經配置延伸通過基座108而在基板支撐表面140之上以當基座108在下降位置時接收來自機械葉片的基板110。
升舉銷130包括接觸構件132與致動器134。在操作中，當基座108在下降位置時，致動器134可嚙合旋轉構件114並導致接觸構件132延伸通過基座108而超過基板支撐表面140(在第2A圖中有更多細節)。在一個實施例中，當基座108於上升位置時，致動器134可經配重而收回接觸構件132於基板支撐表面140之下。
如前所述，旋轉構件114可移動地設置於腔室100中。類似於基座108，旋轉構件114可經配置而沿著軸148 軸向移動。旋轉構件114亦可繞著軸148旋轉。例如，旋轉構件114可繞著基座108的桿138旋轉。旋轉構件114可延伸通過鄰近於桿138的腔室主體102之基部128。馬達120可與旋轉構件114耦接且馬達128可經配置而將旋轉構件114軸向移動以及將旋轉構件114繞著軸148旋轉。在一個實施例中，馬達120可係旋轉伺服馬達或類似物。
旋轉構件114可包括一或多個自旋轉構件114延伸的延伸部146。一或多個延伸部146可係互相不連續的且可係分開的以允許當基座108在下降位置時讓鄰近延伸部146之間的機械葉片通過。延伸部146經配置使得延伸部146自基座108徑向向外設置。在一個實施例中，旋轉構件114可包括三個延伸部146。在此實施例中，沿著包括該三個延伸部146的假定圓周，延伸部146互相可係等間距的。然而，可以理解，旋轉構件114可包括較多或較少數量的延伸部。
旋轉構件114與延伸部146可由陶瓷材料形成，例如，碳化矽或石英材料。延伸部146可經配置接觸邊緣環112。邊緣環112可由陶瓷材料形成並可具有環狀。邊緣環112可經配置而嚙合基座108的基板支撐表面140或旋轉構件114的延伸部146。在一個實施例中，基座108可具有沿著基板支撐表面140圓周形成的環狀突出部分147。當基座108在處理位置時，環狀突出部分147可經配置而與邊緣環112耦接及支撐邊緣環112。在此實施例中，邊緣環112的底表面142可接觸環狀突出部分147或基板支撐表面140。基板100可由邊緣環112的頂表面144或基板支撐表面140，或邊緣環112 與基板支撐表面140兩者的組合支撐。
邊緣環112經調整尺寸而自基座108的基板支撐表面140徑向向外延伸。如此一來，邊緣環112的直徑可係大於基板支撐表面140的直徑。邊緣環112亦可自環狀突出部分147徑向向外延伸。因此，徑向延伸超過基座108的邊緣環112的底表面142之部分可經配置而嚙合旋轉構件114的一或多個延伸部146。
在操作中，可舉升旋轉構件114使得延伸部146接觸邊緣環112而將邊緣環112自基座108舉升。因此，可將設置於邊緣環112上的基板110自基板支撐表面140升起。或者，旋轉構件114可保持靜止而基座108可自處理位置下降使得邊緣環112嚙合延伸部146。在這兩個示範例中，邊緣環112以及支撐於邊緣環112上的基板110可自基座108分開。邊緣環112自基座108的舉升使旋轉構件114能夠將基板110相對於基座108而繞著軸148旋轉。旋轉構件114的旋轉可係不連續或係連續的以及旋轉構件114的垂直運動可用於產生邊緣環112與基座108之間具有一距離的間隙。旋轉構件114或基座108的定位可用於控制間隙距離以影響各種製程的沉積特性。
第2A-2D圖繪示各式基板110處理操作期間第1圖的處理腔室100。氣源116、RF電源、馬達120及電源122未示於第2A-2D圖中而不混淆所述實施例，然而，可以考慮該等元件包含於第2A-2D圖的實施例中。第2A圖繪示機械葉片150將基板110傳送到處理腔室100。機械葉片150自傳 送腔室126延伸通過開口124並將基板110定位於處理空間106中。旋轉構件114的延伸部146可經定位而允許機械葉片150無阻礙地通過。所示升舉銷130的接觸構件132延伸於基板支撐表面140之上以接收來自機械葉片150的基板110。升舉銷130的致動器134可接觸旋轉構件114並導致接觸構件132延伸通過基座108而於基板支撐表面140之上。在此實施例中，當基座108與旋轉構件114靠近時，旋轉構件114可與升舉銷130對準，使升舉銷130能夠致動。
在機械葉片150將基板110置放於升舉銷130上之後，機械葉片150可自處理空間106退回。第2B圖繪示基座108升至處理位置。旋轉構件114可繞軸148旋轉至用於將基板110舉升於接續操作的一位置。如所繪示的，升舉銷130自旋轉構件114鬆開及基板110靜置於邊緣環112上。在一個實施例中，基板110亦可接觸基板支撐表面140。在處理位置中，基板110可依所需時間處理。例如，基板可在處理位置中作部分處理或全部處理。
第2C圖繪示用於將基板110自基座108舉升的操作。在此作期間，基座108自處理位置下降使得邊緣環112接觸延伸部146。基座108可進一步下降而將邊緣環112/基板110自基板支撐表面140分開。基座108可下降夠大的距離以嚙合邊緣環112於延伸部146上，而避免升舉銷130與旋轉構件114之間的接觸。如此一來，基板完全自基座108去耦(decouple)且延伸部146單獨支撐邊緣環112,基板110設置於邊緣環112上。
第2D圖繪示基板110透過旋轉構件114的旋轉。如前所述，邊緣環112自基座108去耦且旋轉構件114可繞著軸148旋轉而轉動基板110。基板110的旋轉改變基板110相對於面板104與基座108的位置。在一個實施例中，旋轉構件114可繞軸148旋轉約1°至約360°之間，例如，約30°至約270°之間，例如，約90°至約180°之間。在關於第2A-2D圖所述相關的實施例中，旋轉構件114可在所述的整個操作中，維持在處理空間106內的單一舉升。
基板110的處理可藉由重複第2B-2D圖所述的實施例進行，直到滿意的薄膜形成於基板上。可接著使用關於第2A圖所述的實施例將基板110自腔室100移除。以上實施例提供處理期間基板110的不連續旋轉。在一個實施例中，基板110可旋轉約90°並經處理四次使得當基板110於相對於面板104的四個不同定向時，實施沉積於基板110上。
第3A-3C圖繪示各式基板處理操作步驟期間第1圖的處理腔室100。在關於第3A-3C圖所述的實施例中，在薄膜沉積期間，基板110連續旋轉。第3A與3B圖分別相似於第2A與2B圖，第2A與2B圖的描述可於前面找到。在第3B圖中，延伸部146可與邊緣環112接觸或可不與邊緣環112接觸。然而，邊緣環112維持由基座108支撐。
基座108自第3圖所示的舉升處理位置下降一距離302使得延伸部146接觸並支撐邊緣環112。因此，基板110與邊緣環112自基板支撐表面140去耦。距離302亦可界定基板支撐表面140與邊緣環112底表面間的分隔關係。在一 個實施例中，距離302可係約0.01吋至約1吋之間。或者，距離302可界定基板110與基板支撐表面140間的分隔關係。
下降基座108與將邊緣環112/基板110去耦使旋轉構件114能夠將邊緣環112/基板110繞軸148旋轉。當旋轉構件114轉動邊緣環112/基板110時，可進行在基板110上的薄膜沉積。旋轉構件114的旋轉可持續用於沉積過程的整個期間或沉積過程的部分。邊緣環112/基板110間的分隔關係不僅允許沉積期間的旋轉，亦維持由於基板支撐表面140與基板110間靠近，基座108加熱基板110的能力。
第4圖繪示處理腔室400的概要截面圖。腔室400可相似於關於第1圖所述的腔室100，且可以考慮關於腔室400所述的實施例可用於腔室100中，反之亦然。例如，雖然未示於第4圖中，腔室100的升舉銷130可用於腔室400中。腔室400可另外包括遮蔽環402、電極404及襯墊414。遮蔽環402可由與用於形成邊緣環112的材料相似之陶瓷材料形成。遮蔽環402可依據基座108與旋轉構件114的位置而設置於邊緣環112的頂表面144或電極延伸部406上。遮蔽環402可係圓環形狀及遮蔽環402的部分可延伸過基板110的邊緣以防止基板110邊緣附近的沉積。在一個實施例中，遮蔽環402係可選擇的。
電極404可耦接於面板104附近的腔室主體102並經配置而影響形成於處理空間106中基板110上的電漿。電極404可產生影響形狀、密度及電漿的各種其他特性之電流而影響基板110上的薄膜沉積。電極延伸部406可自腔室主 體102徑向向內延伸及當遮蔽環未被邊緣環112支撐時，電極延伸部406經配置支撐遮蔽環402(見第5A-5B圖)。
襯墊414包括與腔室主體102基部128耦接的陶瓷板。襯墊414可用於RF耦接至基部128及亦可改善實施於腔室400上的清洗與維護程序的效率。襯墊埠416可通過襯墊414形成。泵412亦可與腔室400耦接使得泵412與處理空間416以流體連接。泵412可經襯墊埠416排出處理空間106並於腔室400中產生真空。
處理空間106的上部區域408可大約界定為基板支撐表面140與面板104間的距離。上部區域408距離可係介於約0.2英吋至3英吋之間，如介於0.75英吋至1.25英吋之間，例如1英吋。處理空間106的下部區域410可大約界定為基板支撐表面140與基部128或襯墊414間的距離。下部區域410距離可係介於約1英吋至4英吋之間，如介於1.5英吋至2.5英吋之間，例如2英吋。在一個實施例中，下部區域410包括處理空間106的大約50%。
第5A-5F圖例繪示各式基板處理操作期間第4圖的處理腔室400。氣源116、RF電源、馬達120及電源122未示於第5A-5F圖中而不混淆所述實施例，然而，可以考慮該等元件包含於第5A-5F圖的實施例中。此外，升舉銷130可與基座108耦接，但為求清楚之緣故而未圖示出。
第5A圖相似於第2A與3A圖，第5A圖的描述可於前面找到。當旋轉構件114在下降位置時，延伸部146可維持在機械葉片150的移動平面下以允許基板110到處理空 間106的傳送暢通。在一個實施例中，示於第4圖與第5A-5F圖的延伸部146的長度可係小於第1圖、第2A-2D圖與第3A-3C圖所示延伸部146的長度。第5B圖繪示旋轉構件114位於略微舉升的位置，其中延伸部146接觸邊緣環112以將基板110舉升至基座108之上。
第5C圖繪示基座108與旋轉構件114於舉升處理位置。基座108及旋轉構件114可與支撐邊緣環112的旋轉構件114或支撐邊緣環112的基座108一起被舉升。如所示，當基板定位於最終處理位置時，邊緣環112可設置於基板支撐表面140或環狀突出部分147上。延伸部146可與邊緣環112維持接觸或延伸部146可降低而不與邊緣環112接觸，但在大部分實施例中，邊緣環112會由基座108支撐。隨著基板110在舉升處理位置，可進行薄膜的至少部分之沉積。在一個實施例中，所需薄膜厚度的約四分之一可被沉積。
第5D圖繪示邊緣環112/基板110自基座108的分開。基座108降低但旋轉構件114維持在第5C圖所示的位置中，或在一個實施例中，可舉升旋轉構件114。在其他實施例中，邊緣環112/基板110自基板支撐表面140分開。
第5E圖繪示藉由旋轉構件114之邊緣環112/基板110的旋轉。在邊緣環112/基板110自基座分開後，旋轉構件114可繞軸148旋轉。在一個實施例中，旋轉構件114可旋轉約60°至約120°，如約90°。
第5F圖繪示舉升到處理位置的基座108。如所示，基座108可經舉升而接觸邊緣環112/基板110。可以考慮，旋 轉構件114亦可稍微下降以重新嚙合基座與邊緣環112/基板110之間的接觸。此實施例中，基座108與旋轉構件114的定位相似於第5C圖所示的基座108與旋轉構件114的定位。可如以上所述進行薄膜部分的沉積。
可重複關於第5D-5F圖所述的處理直到達到所需的薄膜厚度。在一個實施例中，邊緣環112/基板110可旋轉90°四次，於每次旋轉之間以所需薄膜厚度的四分之一沉積。例如，基板110的第二位置可係自基板110的第一位置旋轉約90°。基板110的第三位置可係自基板110的第二位置旋轉約90°。基板110的第四位置可係自基板110的第三位置旋轉約90°。第一位置、第二位置、第三位置與第四位置可互相不同。相信基板110相對於面板104與基座108的旋轉可改善跨基板110表面的沉積薄膜之厚度均勻性。
在薄膜沉積到所需厚度之後，基座108與旋轉構件114可共同下降到第5A圖所示的位置。從此位置，基板110可自腔室400移除及該過程可對另一基板重複。第4圖與第5A-5F圖所述的旋轉構件114可軸向與旋轉地移動。第5A-5F圖所述的處理過程繪示不連續的旋轉與沉積過程，然而，可以考慮，該沉積與旋轉過程可係連續的，例如，相似於關於第3A-3C圖所描述的實施例。如此處所使用的，不連續的旋轉與沉積過程可定義為沉積薄膜的部分、停止沉積與旋轉基板，及在基板旋轉後恢復沉積。在連續的旋轉與沉積過程中，當基板旋轉同時，進行基板上的沉積。
本說明書所述實施例提供用於改善跨PECVD啟用 腔室中基板表面的薄膜厚度均勻性。可以預期，其他類型的半導體處理腔室可受惠於本說明書所述的實施例。基板藉由邊緣環而自基座解耦以允許旋轉構件轉動處理空間內的邊緣環與基板。旋轉可係不連續或係連續的及薄膜沉積可係不連續或係連續的。本說明書所述個別實施例可與其他實施例結合以瞭解薄膜厚度均勻性的改善。因此，形成具有改善薄膜均勻性分佈的薄膜可提供半導體元件的改善。
雖然前面所述係針對本發明揭露的實施例，但在不背離本發明基本範圍下，可設計其他與進一步的實施例，而本發明範圍由以下申請專利範圍所界定。

Claims (11)

  1. 一種用於處理一基板的設備，包括：一腔室主體與一面板，該腔室主體與該面板界定一處理空間；一基座，該基座可移動地設置於該處理空間內；一旋轉構件，該旋轉構件可移動地設置於該處理空間內且自該基座徑向向外；一邊緣環，該邊緣環經配置以支撐一基板，其中該邊緣環經調整而選擇性地與該基座及該旋轉構件連接。
  2. 如請求項1所述之設備，進一步包括一電極，該電極設置於該腔室主體上且與該面板鄰近。
  3. 如請求項2所述之設備，其中該電極進一步包括：一電極延伸部。
  4. 如請求項1所述之設備，進一步包括：一遮蔽環，該遮蔽環經調整而與該邊緣環的一頂表面耦接。
  5. 如請求項3所述之設備，進一步包括：一遮蔽環，該遮蔽環經調整而與該電極的該電極延伸部耦接。
  6. 如請求項1所述之設備，進一步包括：一襯墊組件，該襯墊組件與該腔室主體的一底表面耦接。
  7. 如請求項1所述之設備，進一步包括：複數個升舉銷，該複數個升舉銷耦接穿過該基座。
  8. 如請求項4所述之設備，其中該基座、該旋轉構件、該邊緣環，及該遮蔽環係由具有一類似熱膨脹係數的材料形成。
  9. 如請求項8所述之設備，其中該基座、該旋轉構件、該邊緣環，及該遮蔽環係由陶瓷材料形成。
  10. 如請求項1所述之設備，其中該基座包括鋁或氮化鋁。
  11. 如請求項1所述之設備，其中該旋轉構件包括複數個不連續延伸部。
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