JP5150217B2 - シャワープレート及び基板処理装置 - Google Patents

シャワープレート及び基板処理装置 Download PDF

Info

Publication number
JP5150217B2
JP5150217B2 JP2007291064A JP2007291064A JP5150217B2 JP 5150217 B2 JP5150217 B2 JP 5150217B2 JP 2007291064 A JP2007291064 A JP 2007291064A JP 2007291064 A JP2007291064 A JP 2007291064A JP 5150217 B2 JP5150217 B2 JP 5150217B2
Authority
JP
Japan
Prior art keywords
gas
processing
shower plate
space
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007291064A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009117711A5 (https=
JP2009117711A (ja
Inventor
地塩 輿水
一樹 傳寳
宏政 持木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007291064A priority Critical patent/JP5150217B2/ja
Priority to KR20080110065A priority patent/KR101037812B1/ko
Priority to TW97143167A priority patent/TWI465292B/zh
Priority to US12/266,800 priority patent/US9136097B2/en
Priority to CN2008101755982A priority patent/CN101431009B/zh
Publication of JP2009117711A publication Critical patent/JP2009117711A/ja
Publication of JP2009117711A5 publication Critical patent/JP2009117711A5/ja
Application granted granted Critical
Publication of JP5150217B2 publication Critical patent/JP5150217B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2007291064A 2007-11-08 2007-11-08 シャワープレート及び基板処理装置 Expired - Fee Related JP5150217B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007291064A JP5150217B2 (ja) 2007-11-08 2007-11-08 シャワープレート及び基板処理装置
KR20080110065A KR101037812B1 (ko) 2007-11-08 2008-11-06 샤워 플레이트 및 기판 처리 장치
TW97143167A TWI465292B (zh) 2007-11-08 2008-11-07 Shower board and substrate processing device
US12/266,800 US9136097B2 (en) 2007-11-08 2008-11-07 Shower plate and substrate processing apparatus
CN2008101755982A CN101431009B (zh) 2007-11-08 2008-11-07 喷淋板和基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007291064A JP5150217B2 (ja) 2007-11-08 2007-11-08 シャワープレート及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2009117711A JP2009117711A (ja) 2009-05-28
JP2009117711A5 JP2009117711A5 (https=) 2010-12-24
JP5150217B2 true JP5150217B2 (ja) 2013-02-20

Family

ID=40622601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007291064A Expired - Fee Related JP5150217B2 (ja) 2007-11-08 2007-11-08 シャワープレート及び基板処理装置

Country Status (5)

Country Link
US (1) US9136097B2 (https=)
JP (1) JP5150217B2 (https=)
KR (1) KR101037812B1 (https=)
CN (1) CN101431009B (https=)
TW (1) TWI465292B (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5165968B2 (ja) * 2007-08-27 2013-03-21 東京エレクトロン株式会社 プラズマ粒子シミュレーション方法、記憶媒体、プラズマ粒子シミュレータ、及びプラズマ処理装置
KR101045598B1 (ko) * 2009-05-18 2011-07-01 한국과학기술원 유체 분배 장치 및 유체 분배 방법
JP5455462B2 (ja) 2009-06-23 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5697389B2 (ja) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 プラズマエッチング用の電極板及びプラズマエッチング処理装置
CN102528855B (zh) * 2012-01-16 2014-09-24 中国林业科学研究院木材工业研究所 一种木竹材多锯片锯切冷却系统
CN103367510A (zh) * 2012-03-30 2013-10-23 生阳新材料科技有限公司 冷却板
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104651838B (zh) * 2013-11-22 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种进气装置及反应腔室
CN103736616B (zh) * 2013-12-31 2016-09-28 天津市德中技术发展有限公司 集液体的容纳与液体的喷射功能于一体的装置的制作方法
CN106660213B (zh) * 2014-07-15 2019-01-01 株式会社富士 检查方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
TW201737297A (zh) * 2014-12-26 2017-10-16 Ａ Ｓａｔ股份有限公司 用於電漿蝕刻裝置的電極
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017044754A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma module with slotted ground plate
JP2017183392A (ja) 2016-03-29 2017-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN107159839A (zh) * 2017-03-27 2017-09-15 海安海太铸造有限公司 一种铸造加工用混砂机的混合剂添加机构
CN107414019B (zh) * 2017-03-27 2019-11-15 海安海太铸造有限公司 一种铸造加工用混砂机
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) * 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
CN108012400A (zh) * 2017-11-24 2018-05-08 电子科技大学 一种常压高频冷等离子体处理装置
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7273665B2 (ja) * 2019-09-11 2023-05-15 東京エレクトロン株式会社 熱媒体循環システム及び基板処理装置
KR102695926B1 (ko) 2019-10-07 2024-08-16 삼성전자주식회사 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
CN115775715A (zh) 2021-09-08 2023-03-10 东京毅力科创株式会社 等离子体处理装置
JP7670441B2 (ja) * 2021-11-22 2025-04-30 東京エレクトロン株式会社 シャワーヘッド電極組立体及びプラズマ処理装置
US20250293001A1 (en) * 2022-05-31 2025-09-18 Kyocera Corporation Channel structure, semiconductor manufacturing device, and method for manufacturing channel structure
WO2025244066A1 (ja) * 2024-05-21 2025-11-27 三菱マテリアル株式会社 プラズマ処理装置用シリコン電極板とその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JP3195535B2 (ja) * 1996-04-12 2001-08-06 株式会社東京カソード研究所 プラズマエッチング用電極及びプラズマエッチング装置
JP2001237227A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
JP2002025984A (ja) * 2000-07-05 2002-01-25 Kyocera Corp シャワープレート
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP3837539B2 (ja) * 2003-03-25 2006-10-25 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP4502639B2 (ja) * 2003-06-19 2010-07-14 財団法人国際科学振興財団 シャワープレート、プラズマ処理装置、及び、製品の製造方法
KR101172334B1 (ko) * 2003-12-26 2012-08-14 고에키자이단호진 고쿠사이카가쿠 신고우자이단 샤워 플레이트, 플라즈마 처리 장치, 및 제품의 제조방법
JP4451221B2 (ja) * 2004-06-04 2010-04-14 東京エレクトロン株式会社 ガス処理装置および成膜装置
US7416635B2 (en) * 2005-03-02 2008-08-26 Tokyo Electron Limited Gas supply member and plasma processing apparatus
JP4572127B2 (ja) 2005-03-02 2010-10-27 東京エレクトロン株式会社 ガス供給部材及びプラズマ処理装置
CN101176187A (zh) * 2005-04-18 2008-05-07 东京毅力科创株式会社 喷淋板及其制造方法
US20060288934A1 (en) 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4615464B2 (ja) * 2006-03-16 2011-01-19 東京エレクトロン株式会社 プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置

Also Published As

Publication number Publication date
US20090120582A1 (en) 2009-05-14
TWI465292B (zh) 2014-12-21
TW200927291A (en) 2009-07-01
US9136097B2 (en) 2015-09-15
JP2009117711A (ja) 2009-05-28
CN101431009A (zh) 2009-05-13
KR101037812B1 (ko) 2011-05-30
CN101431009B (zh) 2011-01-19
KR20090048339A (ko) 2009-05-13

Similar Documents

Publication Publication Date Title
JP5150217B2 (ja) シャワープレート及び基板処理装置
JP5399208B2 (ja) プラズマ処理装置及びその構成部品
JP5102500B2 (ja) 基板処理装置
JP5086192B2 (ja) プラズマ処理装置
JP5702968B2 (ja) プラズマ処理装置及びプラズマ制御方法
JP5348919B2 (ja) 電極構造及び基板処理装置
US20080236746A1 (en) Substrate processing apparatus and substrate mounting stage on which focus ring is mounted
US8104428B2 (en) Plasma processing apparatus
US20070187363A1 (en) Substrate processing apparatus and substrate processing method
US20070227663A1 (en) Substrate processing apparatus and side wall component
JP5336968B2 (ja) プラズマ処理装置用電極及びプラズマ処理装置
US20070224817A1 (en) Plasma processing apparatus, plasma processing method, and storage medium
US8342121B2 (en) Plasma processing apparatus
JP2020077654A (ja) 載置台及び基板処理装置
TW202017041A (zh) 多通道噴淋頭
CN100570818C (zh) 等离子体处理装置
US20070211402A1 (en) Substrate processing apparatus, substrate attracting method, and storage medium
JP2007242870A (ja) 基板処理装置、基板吸着方法及び記憶媒体
JP4885586B2 (ja) プラズマ処理装置
US20060289296A1 (en) Plasma processing method and high-rate plasma etching apparatus
US20070221332A1 (en) Plasma processing apparatus

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101104

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101104

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111005

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121203

R150 Certificate of patent or registration of utility model

Ref document number: 5150217

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151207

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees