CN101431009B - 喷淋板和基板处理装置 - Google Patents

喷淋板和基板处理装置 Download PDF

Info

Publication number
CN101431009B
CN101431009B CN2008101755982A CN200810175598A CN101431009B CN 101431009 B CN101431009 B CN 101431009B CN 2008101755982 A CN2008101755982 A CN 2008101755982A CN 200810175598 A CN200810175598 A CN 200810175598A CN 101431009 B CN101431009 B CN 101431009B
Authority
CN
China
Prior art keywords
shower plate
space
processing gas
processing
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101755982A
Other languages
English (en)
Chinese (zh)
Other versions
CN101431009A (zh
Inventor
舆水地盐
传宝一树
持木宏政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101431009A publication Critical patent/CN101431009A/zh
Application granted granted Critical
Publication of CN101431009B publication Critical patent/CN101431009B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN2008101755982A 2007-11-08 2008-11-07 喷淋板和基板处理装置 Expired - Fee Related CN101431009B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-291064 2007-11-08
JP2007291064A JP5150217B2 (ja) 2007-11-08 2007-11-08 シャワープレート及び基板処理装置
JP2007291064 2007-11-08

Publications (2)

Publication Number Publication Date
CN101431009A CN101431009A (zh) 2009-05-13
CN101431009B true CN101431009B (zh) 2011-01-19

Family

ID=40622601

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101755982A Expired - Fee Related CN101431009B (zh) 2007-11-08 2008-11-07 喷淋板和基板处理装置

Country Status (5)

Country Link
US (1) US9136097B2 (https=)
JP (1) JP5150217B2 (https=)
KR (1) KR101037812B1 (https=)
CN (1) CN101431009B (https=)
TW (1) TWI465292B (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5165968B2 (ja) * 2007-08-27 2013-03-21 東京エレクトロン株式会社 プラズマ粒子シミュレーション方法、記憶媒体、プラズマ粒子シミュレータ、及びプラズマ処理装置
KR101045598B1 (ko) * 2009-05-18 2011-07-01 한국과학기술원 유체 분배 장치 및 유체 분배 방법
JP5455462B2 (ja) 2009-06-23 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5697389B2 (ja) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 プラズマエッチング用の電極板及びプラズマエッチング処理装置
CN102528855B (zh) * 2012-01-16 2014-09-24 中国林业科学研究院木材工业研究所 一种木竹材多锯片锯切冷却系统
CN103367510A (zh) * 2012-03-30 2013-10-23 生阳新材料科技有限公司 冷却板
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104651838B (zh) * 2013-11-22 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种进气装置及反应腔室
CN103736616B (zh) * 2013-12-31 2016-09-28 天津市德中技术发展有限公司 集液体的容纳与液体的喷射功能于一体的装置的制作方法
CN106660213B (zh) * 2014-07-15 2019-01-01 株式会社富士 检查方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
TW201737297A (zh) * 2014-12-26 2017-10-16 A Sat股份有限公司 用於電漿蝕刻裝置的電極
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017044754A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma module with slotted ground plate
JP2017183392A (ja) 2016-03-29 2017-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN107159839A (zh) * 2017-03-27 2017-09-15 海安海太铸造有限公司 一种铸造加工用混砂机的混合剂添加机构
CN107414019B (zh) * 2017-03-27 2019-11-15 海安海太铸造有限公司 一种铸造加工用混砂机
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) * 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
CN108012400A (zh) * 2017-11-24 2018-05-08 电子科技大学 一种常压高频冷等离子体处理装置
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7273665B2 (ja) * 2019-09-11 2023-05-15 東京エレクトロン株式会社 熱媒体循環システム及び基板処理装置
KR102695926B1 (ko) 2019-10-07 2024-08-16 삼성전자주식회사 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
CN115775715A (zh) 2021-09-08 2023-03-10 东京毅力科创株式会社 等离子体处理装置
JP7670441B2 (ja) * 2021-11-22 2025-04-30 東京エレクトロン株式会社 シャワーヘッド電極組立体及びプラズマ処理装置
US20250293001A1 (en) * 2022-05-31 2025-09-18 Kyocera Corporation Channel structure, semiconductor manufacturing device, and method for manufacturing channel structure
WO2025244066A1 (ja) * 2024-05-21 2025-11-27 三菱マテリアル株式会社 プラズマ処理装置用シリコン電極板とその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JP3195535B2 (ja) * 1996-04-12 2001-08-06 株式会社東京カソード研究所 プラズマエッチング用電極及びプラズマエッチング装置
JP2001237227A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
JP2002025984A (ja) * 2000-07-05 2002-01-25 Kyocera Corp シャワープレート
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP3837539B2 (ja) * 2003-03-25 2006-10-25 独立行政法人産業技術総合研究所 プラズマcvd装置
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP4502639B2 (ja) * 2003-06-19 2010-07-14 財団法人国際科学振興財団 シャワープレート、プラズマ処理装置、及び、製品の製造方法
KR101172334B1 (ko) * 2003-12-26 2012-08-14 고에키자이단호진 고쿠사이카가쿠 신고우자이단 샤워 플레이트, 플라즈마 처리 장치, 및 제품의 제조방법
JP4451221B2 (ja) * 2004-06-04 2010-04-14 東京エレクトロン株式会社 ガス処理装置および成膜装置
US7416635B2 (en) * 2005-03-02 2008-08-26 Tokyo Electron Limited Gas supply member and plasma processing apparatus
JP4572127B2 (ja) 2005-03-02 2010-10-27 東京エレクトロン株式会社 ガス供給部材及びプラズマ処理装置
CN101176187A (zh) * 2005-04-18 2008-05-07 东京毅力科创株式会社 喷淋板及其制造方法
US20060288934A1 (en) 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4615464B2 (ja) * 2006-03-16 2011-01-19 東京エレクトロン株式会社 プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置

Also Published As

Publication number Publication date
US20090120582A1 (en) 2009-05-14
TWI465292B (zh) 2014-12-21
TW200927291A (en) 2009-07-01
US9136097B2 (en) 2015-09-15
JP2009117711A (ja) 2009-05-28
CN101431009A (zh) 2009-05-13
KR101037812B1 (ko) 2011-05-30
JP5150217B2 (ja) 2013-02-20
KR20090048339A (ko) 2009-05-13

Similar Documents

Publication Publication Date Title
CN101431009B (zh) 喷淋板和基板处理装置
JP7044501B2 (ja) 改善したプロファイルを有するデュアルチャネルシャワーヘッド
JP5399208B2 (ja) プラズマ処理装置及びその構成部品
JP5702968B2 (ja) プラズマ処理装置及びプラズマ制御方法
US9779961B2 (en) Etching method
KR20180037570A (ko) 산소 호환가능한 플라즈마 소스
CN101546700B (zh) 电极构造和基板处理装置
US20120176692A1 (en) Focus ring and substrate processing apparatus having same
US20080210379A1 (en) Substrate processing apparatus and focus ring
US20080236746A1 (en) Substrate processing apparatus and substrate mounting stage on which focus ring is mounted
KR100853575B1 (ko) 기판 처리 장치, 기판 흡착 방법 및 기억 매체
TWI845684B (zh) 鳩尾溝槽加工方法及基板處理裝置
JP2019160816A (ja) プラズマ処理方法及びプラズマ処理装置
US8342121B2 (en) Plasma processing apparatus
TW202017041A (zh) 多通道噴淋頭
CN100570818C (zh) 等离子体处理装置
US20070211402A1 (en) Substrate processing apparatus, substrate attracting method, and storage medium
JP2023123190A (ja) 基板処理装置
CN116364540A (zh) 基板处理设备和基板处理方法
JP5194226B2 (ja) プラズマ処理装置
KR20250103851A (ko) 기판 처리 장치, 기판 처리 방법 및 제조 장치
KR20070111152A (ko) 기판 처리 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110119

Termination date: 20171107