KR101037812B1 - 샤워 플레이트 및 기판 처리 장치 - Google Patents

샤워 플레이트 및 기판 처리 장치 Download PDF

Info

Publication number
KR101037812B1
KR101037812B1 KR20080110065A KR20080110065A KR101037812B1 KR 101037812 B1 KR101037812 B1 KR 101037812B1 KR 20080110065 A KR20080110065 A KR 20080110065A KR 20080110065 A KR20080110065 A KR 20080110065A KR 101037812 B1 KR101037812 B1 KR 101037812B1
Authority
KR
South Korea
Prior art keywords
gas
processing
shower plate
space
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR20080110065A
Other languages
English (en)
Korean (ko)
Other versions
KR20090048339A (ko
Inventor
치시오 고시미즈
가즈키 덴포
히로마사 모치키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20090048339A publication Critical patent/KR20090048339A/ko
Application granted granted Critical
Publication of KR101037812B1 publication Critical patent/KR101037812B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR20080110065A 2007-11-08 2008-11-06 샤워 플레이트 및 기판 처리 장치 Active KR101037812B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-291064 2007-11-08
JP2007291064A JP5150217B2 (ja) 2007-11-08 2007-11-08 シャワープレート及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20090048339A KR20090048339A (ko) 2009-05-13
KR101037812B1 true KR101037812B1 (ko) 2011-05-30

Family

ID=40622601

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20080110065A Active KR101037812B1 (ko) 2007-11-08 2008-11-06 샤워 플레이트 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US9136097B2 (https=)
JP (1) JP5150217B2 (https=)
KR (1) KR101037812B1 (https=)
CN (1) CN101431009B (https=)
TW (1) TWI465292B (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5165968B2 (ja) * 2007-08-27 2013-03-21 東京エレクトロン株式会社 プラズマ粒子シミュレーション方法、記憶媒体、プラズマ粒子シミュレータ、及びプラズマ処理装置
KR101045598B1 (ko) * 2009-05-18 2011-07-01 한국과학기술원 유체 분배 장치 및 유체 분배 방법
JP5455462B2 (ja) 2009-06-23 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5697389B2 (ja) * 2010-09-27 2015-04-08 東京エレクトロン株式会社 プラズマエッチング用の電極板及びプラズマエッチング処理装置
CN102528855B (zh) * 2012-01-16 2014-09-24 中国林业科学研究院木材工业研究所 一种木竹材多锯片锯切冷却系统
CN103367510A (zh) * 2012-03-30 2013-10-23 生阳新材料科技有限公司 冷却板
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104651838B (zh) * 2013-11-22 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种进气装置及反应腔室
CN103736616B (zh) * 2013-12-31 2016-09-28 天津市德中技术发展有限公司 集液体的容纳与液体的喷射功能于一体的装置的制作方法
CN106660213B (zh) * 2014-07-15 2019-01-01 株式会社富士 检查方法
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
TW201737297A (zh) * 2014-12-26 2017-10-16 Ａ Ｓａｔ股份有限公司 用於電漿蝕刻裝置的電極
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017044754A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma module with slotted ground plate
JP2017183392A (ja) 2016-03-29 2017-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
CN107159839A (zh) * 2017-03-27 2017-09-15 海安海太铸造有限公司 一种铸造加工用混砂机的混合剂添加机构
CN107414019B (zh) * 2017-03-27 2019-11-15 海安海太铸造有限公司 一种铸造加工用混砂机
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) * 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
CN108012400A (zh) * 2017-11-24 2018-05-08 电子科技大学 一种常压高频冷等离子体处理装置
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7273665B2 (ja) * 2019-09-11 2023-05-15 東京エレクトロン株式会社 熱媒体循環システム及び基板処理装置
KR102695926B1 (ko) 2019-10-07 2024-08-16 삼성전자주식회사 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
CN115775715A (zh) 2021-09-08 2023-03-10 东京毅力科创株式会社 等离子体处理装置
JP7670441B2 (ja) * 2021-11-22 2025-04-30 東京エレクトロン株式会社 シャワーヘッド電極組立体及びプラズマ処理装置
US20250293001A1 (en) * 2022-05-31 2025-09-18 Kyocera Corporation Channel structure, semiconductor manufacturing device, and method for manufacturing channel structure
WO2025244066A1 (ja) * 2024-05-21 2025-11-27 三菱マテリアル株式会社 プラズマ処理装置用シリコン電極板とその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283493A (ja) * 1996-04-12 1997-10-31 Tokyo Kasoode Kenkyusho:Kk プラズマエッチング用電極及びプラズマエッチング装置
JP2001237227A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
KR100762529B1 (ko) 2005-03-02 2007-10-01 동경 엘렉트론 주식회사 가스 공급 부재 및 플라즈마 처리 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JP2002025984A (ja) * 2000-07-05 2002-01-25 Kyocera Corp シャワープレート
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP3837539B2 (ja) * 2003-03-25 2006-10-25 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP4502639B2 (ja) * 2003-06-19 2010-07-14 財団法人国際科学振興財団 シャワープレート、プラズマ処理装置、及び、製品の製造方法
KR101172334B1 (ko) * 2003-12-26 2012-08-14 고에키자이단호진 고쿠사이카가쿠 신고우자이단 샤워 플레이트, 플라즈마 처리 장치, 및 제품의 제조방법
JP4451221B2 (ja) * 2004-06-04 2010-04-14 東京エレクトロン株式会社 ガス処理装置および成膜装置
US7416635B2 (en) * 2005-03-02 2008-08-26 Tokyo Electron Limited Gas supply member and plasma processing apparatus
CN101176187A (zh) * 2005-04-18 2008-05-07 东京毅力科创株式会社 喷淋板及其制造方法
US20060288934A1 (en) 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4615464B2 (ja) * 2006-03-16 2011-01-19 東京エレクトロン株式会社 プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283493A (ja) * 1996-04-12 1997-10-31 Tokyo Kasoode Kenkyusho:Kk プラズマエッチング用電極及びプラズマエッチング装置
JP2001237227A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
KR100762529B1 (ko) 2005-03-02 2007-10-01 동경 엘렉트론 주식회사 가스 공급 부재 및 플라즈마 처리 장치

Also Published As

Publication number Publication date
US20090120582A1 (en) 2009-05-14
TWI465292B (zh) 2014-12-21
TW200927291A (en) 2009-07-01
US9136097B2 (en) 2015-09-15
JP2009117711A (ja) 2009-05-28
CN101431009A (zh) 2009-05-13
JP5150217B2 (ja) 2013-02-20
CN101431009B (zh) 2011-01-19
KR20090048339A (ko) 2009-05-13

Similar Documents

Publication Publication Date Title
KR101037812B1 (ko) 샤워 플레이트 및 기판 처리 장치
JP4589115B2 (ja) プラズマ処理システムにおける、堆積シールドを有する改良された上部電極板のための装置
US9779961B2 (en) Etching method
US8104428B2 (en) Plasma processing apparatus
US9818583B2 (en) Electrode plate for plasma etching and plasma etching apparatus
KR100996790B1 (ko) 플라즈마 처리 장치
KR102260339B1 (ko) 반도체 장치의 제조 방법
JP5281811B2 (ja) プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
KR20100051577A (ko) 플라즈마 처리 장치 및 그 구성부품
US20120037597A1 (en) Plasma processing apparatus and plasma control method
JP5348919B2 (ja) 電極構造及び基板処理装置
TWM564818U (zh) 氧氣相容電漿源
JP2006501645A (ja) プラズマ処理システムにおける改良された上部電極板のための方法及び装置
US20100224591A1 (en) Substrate processing method
JP7378276B2 (ja) プラズマ処理装置
JP2010016021A (ja) プラズマ処理装置
US20070227663A1 (en) Substrate processing apparatus and side wall component
US8342121B2 (en) Plasma processing apparatus
KR20200051505A (ko) 배치대 및 기판 처리 장치
TW202017041A (zh) 多通道噴淋頭
KR100843009B1 (ko) 플라즈마 처리 장치
KR20070095830A (ko) 플라즈마 처리 장치
KR20220044705A (ko) 샤워 헤드 유닛 및 이를 구비하는 기판 처리 시스템
JP2021077662A (ja) ウエハ、クリーニング方法、基板処理装置およびプラズマ処理システム
KR20020051670A (ko) 식각장치의 샤워헤드

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140502

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160418

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170421

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180518

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190516

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000