JP2020077654A - 載置台及び基板処理装置 - Google Patents
載置台及び基板処理装置 Download PDFInfo
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- JP2020077654A JP2020077654A JP2018207908A JP2018207908A JP2020077654A JP 2020077654 A JP2020077654 A JP 2020077654A JP 2018207908 A JP2018207908 A JP 2018207908A JP 2018207908 A JP2018207908 A JP 2018207908A JP 2020077654 A JP2020077654 A JP 2020077654A
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32431—Constructional details of the reactor
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- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Abstract
Description
図1は、一実施形態に係る基板処理装置1の一例を示す図である。本実施形態にかかる基板処理装置1は、容量結合型の平行平板処理装置であり、例えば表面が陽極酸化処理されたアルミニウムからなる円筒状の処理容器10を有している。処理容器10は接地されている。
次に、温度変化による伸縮に基づくエッジリング24の位置の偏りについて、図2を参照して説明する。図2(a)〜(d)の上段は、ウエハWを載置する静電チャック20の載置面120とエッジリング24とを平面視した図である。図2(a)〜(d)の下段は、図2(a)〜(d)の上段のI−I面で示した、静電チャック20とエッジリング24との断面の一部を拡大した図である。
図2の例の実験結果1について図3を参照して説明する。例えば、図3(b)に示す静電チャック20の載置面120と載置面121との間の側面と、エッジリング24の内径面との間の隙間Sの径方向の間隔をAとする。図3(a)に示すように、間隔Aが0.5mmよりも大きい場合、静電チャック20とエッジリング24の間からパーティクルは生じなかった。
これに対して、本実施形態では、シート部材25によりエッジリング24の調芯動作を可能とし、エッジリング24が静電チャック20と略同心円状の位置からずれることを防止する。これにより、静電チャック20とエッジリング24との隙間Sを管理し、マイクロアーキング程度の異常放電が生じることを防止することでパーティクルの発生を回避する。
図5を参照して、本実施形態に係るエッジリング24の調芯動作の実験結果2について、比較例と比較して説明する。図5の比較例は、図2にて説明したエッジリング24と静電チャック20との隙間Sに何も設けない場合の実験結果の一例を示す。図5の本実施形態は、エッジリング24と静電チャック20との隙間Sにシート部材25を設けた場合の実験結果の一例を示す。
シート部材25は、載置面120よりも低い位置に配置される。更に、シート部材25は、図5の本実施形態に示すように、エッジリング24の段差部24aの底面から出ないように配置されることが好ましい。エッジリング24の段差部24aの底面から上に出っ張るとプラズマに暴露され、消耗し易くなり、シート部材25の寿命が短くなるためである。
10 処理容器
16 載置台
16a 基台
20 静電チャック
20a 第1の電極
21 第2の電極
22、23 直流電源
24 エッジリング
25 シート部材
26 インシュレータリング
34 上部電極
48 第2の高周波電源
50 可変直流電源
90 第1の高周波電源
120、121 載置面
200 制御部
Claims (6)
- 基板の周囲に配置されるエッジリングと、
前記基板を載置する第1載置面と前記エッジリングを載置する第2載置面とを有する静電チャックと、
前記静電チャックの前記第1載置面と前記第2載置面との間の側面と、前記エッジリングの内径面との間であって、前記第1載置面よりも低い位置に配置される伸縮性のある部材と、
を有する載置台。 - 前記伸縮性のある部材は、
シート状、フィルム状又はバネ状である、
請求項1に記載の載置台。 - 前記伸縮性のある部材は、
樹脂により形成される、
請求項1又は2に記載の載置台。 - 前記伸縮性のある部材は、
プラズマ耐性のある材料により形成される、
請求項1〜3のいずれか一項に記載の載置台。 - 前記伸縮性のある部材は、
周方向に1つ又は複数設けられる、
請求項1〜4のいずれか一項に記載の載置台。 - 基板の周囲に配置されるエッジリングと、
前記基板を載置する第1載置面と前記エッジリングを載置する第2載置面とを有する静電チャックと、
前記静電チャックの前記第1載置面と前記第2載置面との間の側面と、前記エッジリングの内径面との間であって、前記第1載置面よりも低い位置に配置される伸縮性のある部材と、を有する載置台、を備えた基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018207908A JP7175160B2 (ja) | 2018-11-05 | 2018-11-05 | 基板処理装置 |
TW108138377A TW202032715A (zh) | 2018-11-05 | 2019-10-24 | 載置台及基板處理裝置 |
US16/672,704 US20200144090A1 (en) | 2018-11-05 | 2019-11-04 | Placing table and substrate processing apparatus |
KR1020190139528A KR20200051505A (ko) | 2018-11-05 | 2019-11-04 | 배치대 및 기판 처리 장치 |
CN201911070184.8A CN111146065A (zh) | 2018-11-05 | 2019-11-05 | 载置台和基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018207908A JP7175160B2 (ja) | 2018-11-05 | 2018-11-05 | 基板処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020077654A true JP2020077654A (ja) | 2020-05-21 |
JP2020077654A5 JP2020077654A5 (ja) | 2021-09-16 |
JP7175160B2 JP7175160B2 (ja) | 2022-11-18 |
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ID=70459897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018207908A Active JP7175160B2 (ja) | 2018-11-05 | 2018-11-05 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200144090A1 (ja) |
JP (1) | JP7175160B2 (ja) |
KR (1) | KR20200051505A (ja) |
CN (1) | CN111146065A (ja) |
TW (1) | TW202032715A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024038832A1 (ja) * | 2022-08-19 | 2024-02-22 | 東京エレクトロン株式会社 | 治具及び位置合わせ方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114678246A (zh) * | 2020-12-24 | 2022-06-28 | 中微半导体设备(上海)股份有限公司 | 用于电容耦合等离子处理器阻抗特性测量的测量装置和方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000502837A (ja) * | 1995-12-22 | 2000-03-07 | ラム リサーチ コーポレイション | 基板クランプ用リップシール付き静電クランプ |
JP2005033181A (ja) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
JP2006523382A (ja) * | 2003-03-21 | 2006-10-12 | 東京エレクトロン株式会社 | 処理中の基板裏面堆積を減らす方法および装置。 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
US7713431B2 (en) * | 2004-06-10 | 2010-05-11 | Tokyo Electron Limited | Plasma processing method |
US20070283891A1 (en) * | 2006-03-29 | 2007-12-13 | Nobuyuki Okayama | Table for supporting substrate, and vacuum-processing equipment |
JP5317424B2 (ja) | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2011151263A (ja) * | 2010-01-22 | 2011-08-04 | Tokyo Electron Ltd | エッチング方法、エッチング装置及びリング部材 |
JP2018107433A (ja) * | 2016-12-27 | 2018-07-05 | 東京エレクトロン株式会社 | フォーカスリング及び基板処理装置 |
-
2018
- 2018-11-05 JP JP2018207908A patent/JP7175160B2/ja active Active
-
2019
- 2019-10-24 TW TW108138377A patent/TW202032715A/zh unknown
- 2019-11-04 US US16/672,704 patent/US20200144090A1/en not_active Abandoned
- 2019-11-04 KR KR1020190139528A patent/KR20200051505A/ko not_active Application Discontinuation
- 2019-11-05 CN CN201911070184.8A patent/CN111146065A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000502837A (ja) * | 1995-12-22 | 2000-03-07 | ラム リサーチ コーポレイション | 基板クランプ用リップシール付き静電クランプ |
JP2006523382A (ja) * | 2003-03-21 | 2006-10-12 | 東京エレクトロン株式会社 | 処理中の基板裏面堆積を減らす方法および装置。 |
JP2005033181A (ja) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
JP2011009351A (ja) * | 2009-06-24 | 2011-01-13 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024038832A1 (ja) * | 2022-08-19 | 2024-02-22 | 東京エレクトロン株式会社 | 治具及び位置合わせ方法 |
Also Published As
Publication number | Publication date |
---|---|
US20200144090A1 (en) | 2020-05-07 |
TW202032715A (zh) | 2020-09-01 |
CN111146065A (zh) | 2020-05-12 |
KR20200051505A (ko) | 2020-05-13 |
JP7175160B2 (ja) | 2022-11-18 |
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