JP5140962B2 - 窒化物半導体基板の製造方法 - Google Patents

窒化物半導体基板の製造方法 Download PDF

Info

Publication number
JP5140962B2
JP5140962B2 JP2006224023A JP2006224023A JP5140962B2 JP 5140962 B2 JP5140962 B2 JP 5140962B2 JP 2006224023 A JP2006224023 A JP 2006224023A JP 2006224023 A JP2006224023 A JP 2006224023A JP 5140962 B2 JP5140962 B2 JP 5140962B2
Authority
JP
Japan
Prior art keywords
nitride semiconductor
pattern
plane
semiconductor substrate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006224023A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007150250A5 (enExample
JP2007150250A (ja
Inventor
徹 高曽根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2006224023A priority Critical patent/JP5140962B2/ja
Priority to US11/525,906 priority patent/US7608525B2/en
Priority to PL380915A priority patent/PL218607B1/pl
Publication of JP2007150250A publication Critical patent/JP2007150250A/ja
Priority to US12/480,342 priority patent/US7615472B2/en
Publication of JP2007150250A5 publication Critical patent/JP2007150250A5/ja
Application granted granted Critical
Publication of JP5140962B2 publication Critical patent/JP5140962B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2006224023A 2005-10-28 2006-08-21 窒化物半導体基板の製造方法 Expired - Fee Related JP5140962B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006224023A JP5140962B2 (ja) 2005-10-28 2006-08-21 窒化物半導体基板の製造方法
US11/525,906 US7608525B2 (en) 2005-10-28 2006-09-25 Method for manufacturing nitride semiconductor substrate
PL380915A PL218607B1 (pl) 2005-10-28 2006-10-26 Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe
US12/480,342 US7615472B2 (en) 2005-10-28 2009-06-08 Method for manufacturing nitride semiconductor substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005314688 2005-10-28
JP2005314688 2005-10-28
JP2006224023A JP5140962B2 (ja) 2005-10-28 2006-08-21 窒化物半導体基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012212398A Division JP5454647B2 (ja) 2005-10-28 2012-09-26 窒化物半導体基板の製造方法、窒化物半導体基板及び発光素子

Publications (3)

Publication Number Publication Date
JP2007150250A JP2007150250A (ja) 2007-06-14
JP2007150250A5 JP2007150250A5 (enExample) 2009-06-25
JP5140962B2 true JP5140962B2 (ja) 2013-02-13

Family

ID=37995163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006224023A Expired - Fee Related JP5140962B2 (ja) 2005-10-28 2006-08-21 窒化物半導体基板の製造方法

Country Status (3)

Country Link
US (2) US7608525B2 (enExample)
JP (1) JP5140962B2 (enExample)
PL (1) PL218607B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008099949A1 (ja) * 2007-02-16 2008-08-21 Sumitomo Chemical Company, Limited 電界効果トランジスタ用エピタキシャル基板
JP4915618B2 (ja) 2007-06-06 2012-04-11 澁谷工業株式会社 導電性ボールの配列装置
JP4888377B2 (ja) * 2007-12-22 2012-02-29 日立電線株式会社 窒化物半導体自立基板
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
EP2465141B1 (en) * 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5458874B2 (ja) * 2009-12-25 2014-04-02 日亜化学工業株式会社 窒化物半導体の成長方法
AU2011241423A1 (en) 2010-04-13 2012-11-08 Gan Systems Inc. High density gallium nitride devices using island topology
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
TWI455426B (zh) * 2011-02-16 2014-10-01 Advanced Optoelectronic Tech 半導體鐳射器及其製造方法
WO2014021259A1 (ja) * 2012-08-03 2014-02-06 シャープ株式会社 窒化物半導体素子構造体とその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
DE69223128T2 (de) * 1991-07-26 1998-07-09 Denso Corp Verfahren zur herstellung vertikaler mosfets
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
ATE550461T1 (de) * 1997-04-11 2012-04-15 Nichia Corp Wachstumsmethode für einen nitrid-halbleiter
JP3058620B2 (ja) * 1998-04-28 2000-07-04 京セラ株式会社 液晶表示装置
JP2000223417A (ja) * 1999-01-28 2000-08-11 Sony Corp 半導体の成長方法、半導体基板の製造方法および半導体装置の製造方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
JP4356208B2 (ja) * 2000-08-01 2009-11-04 ソニー株式会社 窒化物半導体の気相成長方法
JP4043193B2 (ja) * 2001-01-11 2008-02-06 日亜化学工業株式会社 窒化物半導体基板及びその製造方法
US6562701B2 (en) 2001-03-23 2003-05-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP4201541B2 (ja) * 2002-07-19 2008-12-24 豊田合成株式会社 半導体結晶の製造方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP2004336040A (ja) * 2003-04-30 2004-11-25 Osram Opto Semiconductors Gmbh 複数の半導体チップの製造方法および電子半導体基体
US7622318B2 (en) * 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

Also Published As

Publication number Publication date
PL380915A1 (pl) 2007-04-30
JP2007150250A (ja) 2007-06-14
US20090246945A1 (en) 2009-10-01
US7608525B2 (en) 2009-10-27
US20070096262A1 (en) 2007-05-03
US7615472B2 (en) 2009-11-10
PL218607B1 (pl) 2015-01-30

Similar Documents

Publication Publication Date Title
US7615472B2 (en) Method for manufacturing nitride semiconductor substrate
JP4818464B2 (ja) 微細構造の製造方法
CN103429800B (zh) 氮化镓层的制造方法及该方法中使用的晶种基板
CN114600248B (zh) 半导体元件和半导体元件的制造方法
CN101473454A (zh) ZnO系半导体元件
CN104246027B (zh) 复合基板及功能元件
JP5051455B2 (ja) エピタキシャル成長用窒化物半導体基板の製造方法
JP4322187B2 (ja) 窒化物半導体発光素子
US8017414B2 (en) Method for manufacturing light emitting device using non-polar substrate
CN108963042A (zh) Ramo4基板及氮化物半导体装置
JP5458874B2 (ja) 窒化物半導体の成長方法
JP2009208991A (ja) 窒化物半導体基板の製造方法
JP5488916B2 (ja) 半導体面発光素子及びその製造方法
JP6004550B2 (ja) 種結晶基板、複合基板および機能素子
KR101505119B1 (ko) 3족 질화물 반도체층을 제조하는 방법
JP5834952B2 (ja) 窒化物半導体基板の製造方法
JP5454647B2 (ja) 窒化物半導体基板の製造方法、窒化物半導体基板及び発光素子
JP2010215446A (ja) Ｉｉｉ族窒化物結晶の成長方法
JP3698061B2 (ja) 窒化物半導体基板及びその成長方法
JP7305428B2 (ja) 半導体成長用基板、半導体素子、半導体発光素子および半導体素子製造方法
JP3555657B2 (ja) 低欠陥窒化物半導体基板及びその製造方法
JP4232326B2 (ja) 低欠陥窒化物半導体の成長方法
JP2023092803A (ja) 結晶成長用基板、窒化ガリウム基板、半導体基板、および窒化ガリウム基板の製造方法
KR101505117B1 (ko) 3족 질화물 반도체 적층체

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090513

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090513

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120327

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120525

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120626

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120926

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20121003

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121023

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121105

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151130

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5140962

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees