JP5133682B2 - 不揮発性メモリおよび改善された部分的ページプログラミング機能を備えた制御処理 - Google Patents

不揮発性メモリおよび改善された部分的ページプログラミング機能を備えた制御処理 Download PDF

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JP5133682B2
JP5133682B2 JP2007509536A JP2007509536A JP5133682B2 JP 5133682 B2 JP5133682 B2 JP 5133682B2 JP 2007509536 A JP2007509536 A JP 2007509536A JP 2007509536 A JP2007509536 A JP 2007509536A JP 5133682 B2 JP5133682 B2 JP 5133682B2
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JP2007534106A5 (enExample
JP2007534106A (ja
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リ，ヤン
カーウイング フォング，ユーピン
達 三輪
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サンディスク テクノロジィース インコーポレイテッド
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2007509536A 2004-04-23 2005-04-19 不揮発性メモリおよび改善された部分的ページプログラミング機能を備えた制御処理 Expired - Fee Related JP5133682B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/830,824 US7057939B2 (en) 2004-04-23 2004-04-23 Non-volatile memory and control with improved partial page program capability
US10/830,824 2004-04-23
PCT/US2005/013018 WO2005109443A1 (en) 2004-04-23 2005-04-19 Non-volatile memory and control with improved partial page program capability

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JP2011184637A Division JP2011258309A (ja) 2004-04-23 2011-08-26 不揮発性メモリおよび改善された部分的ページプログラミング機能を備えた制御処理

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JP2007534106A JP2007534106A (ja) 2007-11-22
JP2007534106A5 JP2007534106A5 (enExample) 2008-06-05
JP5133682B2 true JP5133682B2 (ja) 2013-01-30

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JP2011184637A Pending JP2011258309A (ja) 2004-04-23 2011-08-26 不揮発性メモリおよび改善された部分的ページプログラミング機能を備えた制御処理

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US (3) US7057939B2 (enExample)
JP (2) JP5133682B2 (enExample)
KR (1) KR101127413B1 (enExample)
CN (2) CN101714409B (enExample)
TW (1) TWI305915B (enExample)
WO (1) WO2005109443A1 (enExample)

Families Citing this family (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
US6985388B2 (en) * 2001-09-17 2006-01-10 Sandisk Corporation Dynamic column block selection
US7170802B2 (en) * 2003-12-31 2007-01-30 Sandisk Corporation Flexible and area efficient column redundancy for non-volatile memories
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7057939B2 (en) * 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability
US20060140007A1 (en) * 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
US7251160B2 (en) * 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
US7272040B2 (en) * 2005-04-29 2007-09-18 Infineon Technologies Ag Multi-bit virtual-ground NAND memory device
DE602005012625D1 (de) * 2005-07-22 2009-03-19 Hynix Semiconductor Inc Verfahren zum Zugreifen auf eine nichtflüchtige Mehrpegelspeichervorrichtung vom Typ FLASH NAND
KR100666185B1 (ko) * 2005-07-29 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
US7352626B1 (en) 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
US8291295B2 (en) 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7631245B2 (en) 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
JP4660353B2 (ja) * 2005-11-01 2011-03-30 株式会社東芝 記憶媒体再生装置
US7379330B2 (en) * 2005-11-08 2008-05-27 Sandisk Corporation Retargetable memory cell redundancy methods
US7877540B2 (en) * 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
JP4734110B2 (ja) * 2005-12-14 2011-07-27 株式会社東芝 不揮発性半導体記憶装置
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7733704B2 (en) * 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7310255B2 (en) 2005-12-29 2007-12-18 Sandisk Corporation Non-volatile memory with improved program-verify operations
US7224614B1 (en) 2005-12-29 2007-05-29 Sandisk Corporation Methods for improved program-verify operations in non-volatile memories
US7844879B2 (en) 2006-01-20 2010-11-30 Marvell World Trade Ltd. Method and system for error correction in flash memory
US7952922B2 (en) * 2006-06-06 2011-05-31 Micron Technology, Inc. Method for programming a non-volatile memory device to reduce floating-gate-to-floating-gate coupling effect
US7486561B2 (en) * 2006-06-22 2009-02-03 Sandisk Corporation Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US7489549B2 (en) * 2006-06-22 2009-02-10 Sandisk Corporation System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
EP1887462A1 (en) * 2006-07-26 2008-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory circuit, and machine language program generation device, and method for operating semiconductor device and memory circuit
US7567461B2 (en) 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
US20080046641A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080046630A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
JP2008065977A (ja) * 2006-09-06 2008-03-21 Samsung Electronics Co Ltd マルチレベル不揮発性メモリ装置でのプログラム方法
JP2008065978A (ja) * 2006-09-06 2008-03-21 Samsung Electronics Co Ltd マルチレベル不揮発性メモリ装置でのプログラム方法
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US7577036B2 (en) * 2007-05-02 2009-08-18 Micron Technology, Inc. Non-volatile multilevel memory cells with data read of reference cells
US7660151B2 (en) * 2007-09-17 2010-02-09 Qimonda Ag Method for programming an integrated circuit, method for programming a plurality of cells, integrated circuit, cell arrangement
KR101391881B1 (ko) * 2007-10-23 2014-05-07 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 및 읽기방법
US7742335B2 (en) 2007-10-31 2010-06-22 Micron Technology, Inc. Non-volatile multilevel memory cells
US7848142B2 (en) 2007-10-31 2010-12-07 Micron Technology, Inc. Fractional bits in memory cells
US7668012B2 (en) * 2007-10-31 2010-02-23 Micron Technology, Inc. Memory cell programming
KR101264112B1 (ko) * 2007-12-07 2013-05-13 삼성전자주식회사 최상위 비트 프로그램 판정방법을 개선한 플래시 메모리장치
TW200929225A (en) * 2007-12-25 2009-07-01 Powerchip Semiconductor Corp Memory programming method and data access method
KR100933852B1 (ko) * 2007-12-28 2009-12-24 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 그 동작 방법
US7916544B2 (en) * 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
KR100938092B1 (ko) 2008-03-10 2010-01-21 주식회사 하이닉스반도체 플래시 메모리 소자의 동작 방법
KR101432108B1 (ko) 2008-06-03 2014-08-21 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 구동 방법
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) * 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US20100318720A1 (en) 2009-06-16 2010-12-16 Saranyan Rajagopalan Multi-Bank Non-Volatile Memory System with Satellite File System
US7974124B2 (en) * 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8355287B2 (en) * 2009-08-25 2013-01-15 Aplus Flash Technology, Inc. Method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory device
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US20110153912A1 (en) * 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8595411B2 (en) 2009-12-30 2013-11-26 Sandisk Technologies Inc. Method and controller for performing a sequence of commands
US8443263B2 (en) 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
US8543757B2 (en) 2010-06-23 2013-09-24 Sandisk Technologies Inc. Techniques of maintaining logical to physical mapping information in non-volatile memory systems
KR101666941B1 (ko) * 2010-07-06 2016-10-17 삼성전자주식회사 비휘발성 메모리 장치와 이를 포함하는 반도체 시스템
US8369156B2 (en) 2010-07-13 2013-02-05 Sandisk Technologies Inc. Fast random access to non-volatile storage
WO2012009318A1 (en) 2010-07-13 2012-01-19 Sandisk Technologies Inc. Dynamic optimization of back-end memory system interface
US9069688B2 (en) 2011-04-15 2015-06-30 Sandisk Technologies Inc. Dynamic optimization of back-end memory system interface
US8464135B2 (en) 2010-07-13 2013-06-11 Sandisk Technologies Inc. Adaptive flash interface
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8593866B2 (en) 2011-11-11 2013-11-26 Sandisk Technologies Inc. Systems and methods for operating multi-bank nonvolatile memory
US8732391B2 (en) 2012-04-23 2014-05-20 Sandisk Technologies Inc. Obsolete block management for data retention in nonvolatile memory
US8995183B2 (en) 2012-04-23 2015-03-31 Sandisk Technologies Inc. Data retention in nonvolatile memory with multiple data storage formats
JP2013229080A (ja) * 2012-04-26 2013-11-07 Toshiba Corp 半導体記憶装置および半導体記憶装置のテスト方法
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US8737125B2 (en) 2012-08-07 2014-05-27 Sandisk Technologies Inc. Aggregating data latches for program level determination
US8730724B2 (en) 2012-08-07 2014-05-20 Sandisk Technologies Inc. Common line current for program level determination in flash memory
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US9047974B2 (en) 2012-10-04 2015-06-02 Sandisk Technologies Inc. Erased state reading
JP5541344B2 (ja) * 2012-11-01 2014-07-09 トヨタ自動車株式会社 情報処理装置及び情報処理方法、並びに制御システム
US9384839B2 (en) 2013-03-07 2016-07-05 Sandisk Technologies Llc Write sequence providing write abort protection
KR102175039B1 (ko) * 2013-06-25 2020-11-05 삼성전자주식회사 불휘발성 메모리 장치의 데이터 기입 방법
US20150006784A1 (en) 2013-06-27 2015-01-01 Sandisk Technologies Inc. Efficient Post Write Read in Three Dimensional Nonvolatile Memory
US9063671B2 (en) 2013-07-02 2015-06-23 Sandisk Technologies Inc. Write operations with full sequence programming for defect management in nonvolatile memory
US9218242B2 (en) 2013-07-02 2015-12-22 Sandisk Technologies Inc. Write operations for defect management in nonvolatile memory
US9177663B2 (en) 2013-07-18 2015-11-03 Sandisk Technologies Inc. Dynamic regulation of memory array source line
US9501400B2 (en) 2013-11-13 2016-11-22 Sandisk Technologies Llc Identification and operation of sub-prime blocks in nonvolatile memory
US9043537B1 (en) 2013-11-21 2015-05-26 Sandisk Technologies Inc. Update block programming order
US9229644B2 (en) 2013-11-25 2016-01-05 Sandisk Technologies Inc. Targeted copy of data relocation
US9141291B2 (en) 2013-11-26 2015-09-22 Sandisk Technologies Inc. Adaptive context disbursement for improved performance in non-volatile memory systems
US9058881B1 (en) 2013-12-05 2015-06-16 Sandisk Technologies Inc. Systems and methods for partial page programming of multi level cells
US9244631B2 (en) 2013-12-06 2016-01-26 Sandisk Technologies Inc. Lower page only host burst writes
US9633749B2 (en) * 2013-12-19 2017-04-25 Sandisk Technologies Llc System and method of managing tags associated with read voltages
US9099192B1 (en) * 2014-01-13 2015-08-04 Integrated Silicon Solution, Inc. Erase algorithm for flash memory
US9368224B2 (en) 2014-02-07 2016-06-14 SanDisk Technologies, Inc. Self-adjusting regulation current for memory array source line
US9384128B2 (en) 2014-04-18 2016-07-05 SanDisk Technologies, Inc. Multi-level redundancy code for non-volatile memory controller
US8902652B1 (en) 2014-05-13 2014-12-02 Sandisk Technologies Inc. Systems and methods for lower page writes
US8886877B1 (en) 2014-05-15 2014-11-11 Sandisk Technologies Inc. In-situ block folding for nonvolatile memory
US9529668B2 (en) * 2014-09-26 2016-12-27 Intel Corporation Method and system for using NAND page buffers to improve the transfer buffer utilization of a solid state drive
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US10449811B2 (en) 2015-06-15 2019-10-22 Infineon Technologies Ag Tire monitoring system and method
KR20170011645A (ko) * 2015-07-23 2017-02-02 에스케이하이닉스 주식회사 반도체 메모리 장치를 포함하는 메모리 시스템 및 그것의 동작 방법
JP6457364B2 (ja) 2015-09-11 2019-01-23 東芝メモリ株式会社 メモリシステム
US9858009B2 (en) 2015-10-26 2018-01-02 Sandisk Technologies Llc Data folding in 3D nonvolatile memory
CN105719693B (zh) * 2016-01-22 2019-09-17 清华大学 Nand存储器的多比特编程方法及装置
DE102017124313B4 (de) 2017-10-18 2021-03-18 Infineon Technologies Ag Speicheranordnung und verfahren zum verifizieren eines speicherzugriffs
WO2019169586A1 (en) * 2018-03-07 2019-09-12 Micron Technology, Inc. Performing read operation prior to two-pass programming of storage system
CN109062830B (zh) * 2018-08-02 2021-10-22 中国科学院微电子研究所 一种非易失性存储器的控制系统
CN111383697B (zh) * 2018-12-30 2022-09-06 北京兆易创新科技股份有限公司 用于部分页编程的位扫描方法，部分页编程方法及非易失性存储器
US11594273B2 (en) 2020-10-14 2023-02-28 Hewlett Packard Enterprise Development Lp Row hammer detection and avoidance
US11468942B2 (en) 2021-03-02 2022-10-11 Hewlett Packard Enterprise Development Lp System and method for detecting memory cell disturbance by monitoring canary cells
US20240256142A1 (en) * 2023-02-01 2024-08-01 Micron Technology, Inc. Managing partially programmed blocks
US20240274170A1 (en) * 2023-02-14 2024-08-15 Macronix International Co., Ltd. 3D NOR Flash Based In-Memory Computing
US12354672B2 (en) 2023-08-28 2025-07-08 Macronix International Co., Ltd. Memory sensing with global non-regular counter and/or global multiple reference voltages

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (it) 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
DE69034227T2 (de) 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
JP3210259B2 (ja) * 1996-04-19 2001-09-17 株式会社東芝 半導体記憶装置及び記憶システム
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
JP2001093288A (ja) 1999-09-20 2001-04-06 Toshiba Corp 不揮発性半導体記憶装置
US6278633B1 (en) * 1999-11-05 2001-08-21 Multi Level Memory Technology High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6522584B1 (en) * 2001-08-02 2003-02-18 Micron Technology, Inc. Programming methods for multi-level flash EEPROMs
US6760257B2 (en) * 2002-08-29 2004-07-06 Macronix International Co., Ltd. Programming a flash memory cell
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6983428B2 (en) 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US6657891B1 (en) 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
JP3935139B2 (ja) * 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7057939B2 (en) * 2004-04-23 2006-06-06 Sandisk Corporation Non-volatile memory and control with improved partial page program capability

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CN101714409A (zh) 2010-05-26
US20080025099A1 (en) 2008-01-31
KR101127413B1 (ko) 2012-03-23
WO2005109443A1 (en) 2005-11-17
US20060203561A1 (en) 2006-09-14
US7280396B2 (en) 2007-10-09
US7057939B2 (en) 2006-06-06
CN1942975B (zh) 2010-06-23
TWI305915B (en) 2009-02-01
US20050237814A1 (en) 2005-10-27
CN101714409B (zh) 2014-06-04
US7453735B2 (en) 2008-11-18
KR20070012810A (ko) 2007-01-29
JP2007534106A (ja) 2007-11-22
JP2011258309A (ja) 2011-12-22
TW200620284A (en) 2006-06-16

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