CN101714409B - 具有改进的部分页编程能力的非易失性存储器和控制 - Google Patents

具有改进的部分页编程能力的非易失性存储器和控制 Download PDF

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Publication number
CN101714409B
CN101714409B CN200910160838.6A CN200910160838A CN101714409B CN 101714409 B CN101714409 B CN 101714409B CN 200910160838 A CN200910160838 A CN 200910160838A CN 101714409 B CN101714409 B CN 101714409B
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China
Prior art keywords
charge storage
programmed
programming
storage cell
charge
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Expired - Fee Related
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CN200910160838.6A
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Chinese (zh)
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CN101714409A (zh
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李彦
玉品·卡温·方
三轮徹
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Delphi International Operations Luxembourg SARL
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SanDisk Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
CN200910160838.6A 2004-04-23 2005-04-19 具有改进的部分页编程能力的非易失性存储器和控制 Expired - Fee Related CN101714409B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/830,824 US7057939B2 (en) 2004-04-23 2004-04-23 Non-volatile memory and control with improved partial page program capability
US10/830,824 2004-04-23

Related Parent Applications (1)

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CN2005800117921A Division CN1942975B (zh) 2004-04-23 2005-04-19 用于编程非易失性存储器单元的存储器系统和方法

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CN101714409A CN101714409A (zh) 2010-05-26
CN101714409B true CN101714409B (zh) 2014-06-04

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CN2005800117921A Expired - Fee Related CN1942975B (zh) 2004-04-23 2005-04-19 用于编程非易失性存储器单元的存储器系统和方法

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US (3) US7057939B2 (enExample)
JP (2) JP5133682B2 (enExample)
KR (1) KR101127413B1 (enExample)
CN (2) CN101714409B (enExample)
TW (1) TWI305915B (enExample)
WO (1) WO2005109443A1 (enExample)

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US20080025099A1 (en) 2008-01-31
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WO2005109443A1 (en) 2005-11-17
US20060203561A1 (en) 2006-09-14
US7280396B2 (en) 2007-10-09
US7057939B2 (en) 2006-06-06
CN1942975B (zh) 2010-06-23
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US20050237814A1 (en) 2005-10-27
US7453735B2 (en) 2008-11-18
JP5133682B2 (ja) 2013-01-30
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TW200620284A (en) 2006-06-16

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