JP5126730B2 - 電界効果型トランジスタの製造方法 - Google Patents

電界効果型トランジスタの製造方法 Download PDF

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Publication number
JP5126730B2
JP5126730B2 JP2005325369A JP2005325369A JP5126730B2 JP 5126730 B2 JP5126730 B2 JP 5126730B2 JP 2005325369 A JP2005325369 A JP 2005325369A JP 2005325369 A JP2005325369 A JP 2005325369A JP 5126730 B2 JP5126730 B2 JP 5126730B2
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Prior art keywords
film
substrate
amorphous
amorphous oxide
oxygen
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Expired - Lifetime
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JP2005325369A
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Japanese (ja)
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JP2006165531A (ja
JP2006165531A5 (enExample
Inventor
久人 薮田
政史 佐野
達哉 岩崎
秀雄 細野
利夫 神谷
研二 野村
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Canon Inc
Tokyo Institute of Technology NUC
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Canon Inc
Tokyo Institute of Technology NUC
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Priority to JP2005325369A priority Critical patent/JP5126730B2/ja
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Publication of JP2006165531A5 publication Critical patent/JP2006165531A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2005325369A 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法 Expired - Lifetime JP5126730B2 (ja)

Priority Applications (1)

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JP2005325369A JP5126730B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法

Applications Claiming Priority (3)

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JP2004326686 2004-11-10
JP2004326686 2004-11-10
JP2005325369A JP5126730B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法

Related Child Applications (4)

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JP2012058252A Division JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058163A Division JP5401571B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058087A Division JP5451801B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058253A Division JP5401573B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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JP2006165531A JP2006165531A (ja) 2006-06-22
JP2006165531A5 JP2006165531A5 (enExample) 2008-12-25
JP5126730B2 true JP5126730B2 (ja) 2013-01-23

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JP (1) JP5126730B2 (enExample)

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