JP5126730B2 - 電界効果型トランジスタの製造方法 - Google Patents

電界効果型トランジスタの製造方法 Download PDF

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Publication number
JP5126730B2
JP5126730B2 JP2005325369A JP2005325369A JP5126730B2 JP 5126730 B2 JP5126730 B2 JP 5126730B2 JP 2005325369 A JP2005325369 A JP 2005325369A JP 2005325369 A JP2005325369 A JP 2005325369A JP 5126730 B2 JP5126730 B2 JP 5126730B2
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Prior art keywords
film
substrate
amorphous
amorphous oxide
oxygen
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Expired - Lifetime
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JP2005325369A
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Japanese (ja)
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JP2006165531A (ja
JP2006165531A5 (enExample
Inventor
久人 薮田
政史 佐野
達哉 岩崎
秀雄 細野
利夫 神谷
研二 野村
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Canon Inc
Tokyo Institute of Technology NUC
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Canon Inc
Tokyo Institute of Technology NUC
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Priority to JP2005325369A priority Critical patent/JP5126730B2/ja
Publication of JP2006165531A publication Critical patent/JP2006165531A/ja
Publication of JP2006165531A5 publication Critical patent/JP2006165531A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors

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  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2005325369A 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法 Expired - Lifetime JP5126730B2 (ja)

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JP2005325369A JP5126730B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法

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JP2004326686 2004-11-10
JP2004326686 2004-11-10
JP2005325369A JP5126730B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタの製造方法

Related Child Applications (4)

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JP2012058163A Division JP5401571B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058252A Division JP5401572B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058087A Division JP5451801B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法
JP2012058253A Division JP5401573B2 (ja) 2004-11-10 2012-03-15 電界効果型トランジスタの製造方法

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JP2006165531A JP2006165531A (ja) 2006-06-22
JP2006165531A5 JP2006165531A5 (enExample) 2008-12-25
JP5126730B2 true JP5126730B2 (ja) 2013-01-23

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JP (1) JP5126730B2 (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5376750B2 (ja) * 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
KR100787455B1 (ko) * 2006-08-09 2007-12-26 삼성에스디아이 주식회사 투명 박막 트랜지스터의 제조방법
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
KR100741136B1 (ko) * 2006-08-09 2007-07-19 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그 제조방법
JP5127183B2 (ja) * 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
JP5128792B2 (ja) * 2006-08-31 2013-01-23 財団法人高知県産業振興センター 薄膜トランジスタの製法
EP2096188B1 (en) 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP2008235871A (ja) * 2007-02-20 2008-10-02 Canon Inc 薄膜トランジスタの形成方法及び表示装置
WO2008105347A1 (en) * 2007-02-20 2008-09-04 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5466940B2 (ja) 2007-04-05 2014-04-09 出光興産株式会社 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
KR20100017549A (ko) 2007-05-07 2010-02-16 이데미쓰 고산 가부시키가이샤 반도체 박막, 반도체 박막의 제조 방법 및 반도체 소자
WO2008136505A1 (ja) 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
JP5522889B2 (ja) 2007-05-11 2014-06-18 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット
JP5354999B2 (ja) * 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
WO2009075281A1 (ja) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP5644111B2 (ja) * 2007-12-26 2014-12-24 コニカミノルタ株式会社 金属酸化物半導体およびその製造方法、半導体素子、薄膜トランジスタ
JP5219529B2 (ja) * 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
US7812346B2 (en) * 2008-07-16 2010-10-12 Cbrite, Inc. Metal oxide TFT with improved carrier mobility
TWI491048B (zh) 2008-07-31 2015-07-01 Semiconductor Energy Lab 半導體裝置
TWI518800B (zh) 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5307144B2 (ja) 2008-08-27 2013-10-02 出光興産株式会社 電界効果型トランジスタ、その製造方法及びスパッタリングターゲット
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR20160063402A (ko) 2008-09-12 2016-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
KR101603303B1 (ko) * 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 도전성 산질화물 및 도전성 산질화물막의 제작 방법
KR101631454B1 (ko) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
JP2010135771A (ja) * 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置の作製方法
TWI476915B (zh) 2008-12-25 2015-03-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010205798A (ja) * 2009-02-27 2010-09-16 Japan Science & Technology Agency 薄膜トランジスタの製造方法
TWI529942B (zh) 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JPWO2011001715A1 (ja) * 2009-06-29 2012-12-13 シャープ株式会社 酸化物半導体、薄膜トランジスタアレイ基板及びその製造方法、並びに、表示装置
KR101903930B1 (ko) 2009-06-30 2018-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
CN102473729B (zh) * 2009-07-03 2015-01-28 株式会社半导体能源研究所 制造半导体装置的方法
JP5640478B2 (ja) 2009-07-09 2014-12-17 株式会社リコー 電界効果型トランジスタの製造方法及び電界効果型トランジスタ
WO2011007682A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
US9715845B2 (en) * 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
MY158956A (en) 2009-10-16 2016-11-30 Semiconductor Energy Lab Logic circuit and semiconductor device
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
KR101605984B1 (ko) * 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
WO2011062043A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101396102B1 (ko) * 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120106786A (ko) * 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101883802B1 (ko) * 2009-12-28 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101822962B1 (ko) * 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101435970B1 (ko) * 2010-03-26 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
US8906739B2 (en) 2010-04-06 2014-12-09 Sharp Kabushiki Kaisha Thin film transistor substrate and method for manufacturing same
WO2011132591A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN105321961B (zh) * 2010-04-23 2018-10-02 株式会社半导体能源研究所 半导体装置的制造方法
KR102344452B1 (ko) * 2010-04-23 2021-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20130055607A (ko) 2010-04-23 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
DE112011101410B4 (de) 2010-04-23 2018-03-01 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung
WO2011135988A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
WO2011145467A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20250021395A (ko) * 2010-07-02 2025-02-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8748224B2 (en) * 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5658978B2 (ja) * 2010-11-10 2015-01-28 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板及びその製造方法
CN103262250B (zh) 2010-12-08 2014-12-17 夏普株式会社 半导体装置和显示装置
EP2657974B1 (en) 2010-12-20 2017-02-08 Sharp Kabushiki Kaisha Semiconductor device and display device
JP5645737B2 (ja) * 2011-04-01 2014-12-24 株式会社神戸製鋼所 薄膜トランジスタ構造および表示装置
CN105931967B (zh) * 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
TWI646690B (zh) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101438642B1 (ko) * 2013-11-04 2014-09-17 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
WO2015132697A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10205008B2 (en) * 2016-08-03 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101934165B1 (ko) * 2016-12-12 2018-12-31 연세대학교 산학협력단 산화물 박막, 이의 제조방법 및 이를 포함하는 산화물 박막 트랜지스터
CN110121765B (zh) * 2016-12-27 2023-04-28 夏普株式会社 半导体装置的制造方法和成膜装置
KR102245154B1 (ko) * 2019-06-20 2021-04-26 충북대학교 산학협력단 다적층 구조 izo 박막 트랜지스터 및 그 제조 방법
KR102290124B1 (ko) * 2019-06-20 2021-08-31 충북대학교 산학협력단 Rf 파워 기반의 플라즈마 처리를 이용한 용액공정형 다채널 izo 산화물 박막 트랜지스터 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP4170454B2 (ja) * 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP3941316B2 (ja) * 1999-11-29 2007-07-04 セイコーエプソン株式会社 半導体装置の製造方法、電子機器の製造方法、半導体装置、および電子機器
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2003037268A (ja) * 2001-07-24 2003-02-07 Minolta Co Ltd 半導体素子及びその製造方法
JP4164562B2 (ja) * 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2004235180A (ja) * 2003-01-28 2004-08-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法

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