JP5121196B2 - 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 - Google Patents

金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 Download PDF

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JP5121196B2
JP5121196B2 JP2006251575A JP2006251575A JP5121196B2 JP 5121196 B2 JP5121196 B2 JP 5121196B2 JP 2006251575 A JP2006251575 A JP 2006251575A JP 2006251575 A JP2006251575 A JP 2006251575A JP 5121196 B2 JP5121196 B2 JP 5121196B2
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thin film
raw material
metal alkoxide
compound
alkoxide compound
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Japanese (ja)
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JP2008069135A5 (enExample
JP2008069135A (ja
Inventor
仙二 和田
徹司 阿部
淳 桜井
貴志 東野
竜作 藤本
雅子 清水
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Adeka Corp
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Adeka Corp
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Priority to JP2006251575A priority Critical patent/JP5121196B2/ja
Priority to TW096128292A priority patent/TWI383990B/zh
Priority to KR1020070086619A priority patent/KR101437663B1/ko
Priority to DE102007042943A priority patent/DE102007042943A1/de
Priority to US11/854,109 priority patent/US8003814B2/en
Priority to CN2007101527093A priority patent/CN101143873B/zh
Publication of JP2008069135A publication Critical patent/JP2008069135A/ja
Publication of JP2008069135A5 publication Critical patent/JP2008069135A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2006251575A 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法 Active JP5121196B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006251575A JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
TW096128292A TWI383990B (zh) 2006-09-15 2007-08-01 Metal alkoxides, film forming materials and films
KR1020070086619A KR101437663B1 (ko) 2006-09-15 2007-08-28 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법
DE102007042943A DE102007042943A1 (de) 2006-09-15 2007-09-10 Metallalkoxidverbindung, Material zum Bilden eines dünnen Films, und Verfahren zum Herstellen eines dünnen Films
US11/854,109 US8003814B2 (en) 2006-09-15 2007-09-12 Metal alkoxide compound, material for forming thin film, and method for producing thin film
CN2007101527093A CN101143873B (zh) 2006-09-15 2007-09-14 金属醇盐化合物、薄膜形成用原料及薄膜制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006251575A JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法

Publications (3)

Publication Number Publication Date
JP2008069135A JP2008069135A (ja) 2008-03-27
JP2008069135A5 JP2008069135A5 (enExample) 2009-10-15
JP5121196B2 true JP5121196B2 (ja) 2013-01-16

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JP2006251575A Active JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法

Country Status (6)

Country Link
US (1) US8003814B2 (enExample)
JP (1) JP5121196B2 (enExample)
KR (1) KR101437663B1 (enExample)
CN (1) CN101143873B (enExample)
DE (1) DE102007042943A1 (enExample)
TW (1) TWI383990B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219292A (ja) * 2009-03-17 2010-09-30 Tokyo Electron Ltd 成膜方法
US8697486B2 (en) * 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
JP5923351B2 (ja) * 2012-03-16 2016-05-24 株式会社Adeka 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法
KR102251989B1 (ko) 2014-03-10 2021-05-14 삼성전자주식회사 유기 금속 전구체 및 이를 이용한 박막 형성 방법
CN116529416A (zh) * 2020-11-19 2023-08-01 株式会社Adeka 薄膜的制造方法
CN117004923A (zh) * 2022-04-29 2023-11-07 拓荆科技股份有限公司 半导体处理装置
CN117026207A (zh) * 2022-05-10 2023-11-10 株式会社Egtm 铝前驱体及其制造方法、薄层及存储装置制造方法
JP2025102051A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1954268A (en) * 1930-08-05 1934-04-10 Ternstedt Mfg Co Weather strip window sash channel
US2684972A (en) * 1952-02-21 1954-07-27 Du Pont Production of inorganic esters
GB860353A (en) * 1957-06-20 1961-02-01 Du Pont Improvements in polymerisation of ethylene
JPS60258132A (ja) * 1984-06-04 1985-12-20 Hokko Chem Ind Co Ltd 金属アルコキシドの改良製造法
JPH01172390A (ja) * 1987-12-28 1989-07-07 Hokko Chem Ind Co Ltd 金属アルコキシドの製造方法
JPH01179239A (ja) * 1987-12-29 1989-07-17 Matsushita Electric Ind Co Ltd 光磁気記録媒体の製造方法
JPH05239650A (ja) 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH0660406A (ja) 1992-08-06 1994-03-04 Matsushita Electric Ind Co Ltd 対物レンズ駆動装置
KR0156980B1 (ko) 1995-06-23 1998-12-01 신현주 질화금속 박막증착용 화합물 및 그를 이용한 증착방법
JP4868639B2 (ja) 2000-06-12 2012-02-01 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4693970B2 (ja) 2000-09-14 2011-06-01 株式会社トリケミカル研究所 ゲート酸化膜形成方法
JP3409290B2 (ja) 2000-09-18 2003-05-26 株式会社トリケミカル研究所 ゲート酸化膜形成材料
CN1898192A (zh) * 2003-12-25 2007-01-17 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
DE112005000134T5 (de) * 2004-02-18 2007-02-15 Adeka Corp. Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films
JP2005340405A (ja) * 2004-05-26 2005-12-08 Asahi Denka Kogyo Kk 化学気相成長用原料及び薄膜の製造方法
JP2006182709A (ja) 2004-12-28 2006-07-13 Adeka Corp 薄膜形成用原料、薄膜の製造方法及び金属化合物

Also Published As

Publication number Publication date
CN101143873A (zh) 2008-03-19
DE102007042943A1 (de) 2008-03-27
US8003814B2 (en) 2011-08-23
CN101143873B (zh) 2012-07-25
US20080187662A1 (en) 2008-08-07
JP2008069135A (ja) 2008-03-27
KR20080025301A (ko) 2008-03-20
TWI383990B (zh) 2013-02-01
TW200833701A (en) 2008-08-16
KR101437663B1 (ko) 2014-09-04

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