KR101437663B1 - 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법 - Google Patents

금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법 Download PDF

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KR101437663B1
KR101437663B1 KR1020070086619A KR20070086619A KR101437663B1 KR 101437663 B1 KR101437663 B1 KR 101437663B1 KR 1020070086619 A KR1020070086619 A KR 1020070086619A KR 20070086619 A KR20070086619 A KR 20070086619A KR 101437663 B1 KR101437663 B1 KR 101437663B1
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thin film
metal alkoxide
raw material
alkoxide compound
compound
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KR20080025301A (ko
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센지 와다
테츠지 아베
아츠시 사쿠라이
타카시 히가시노
류사쿠 후지모토
마사코 시미즈
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가부시키가이샤 아데카
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020070086619A 2006-09-15 2007-08-28 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법 Active KR101437663B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006251575A JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
JPJP-P-2006-00251575 2006-09-15

Publications (2)

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KR20080025301A KR20080025301A (ko) 2008-03-20
KR101437663B1 true KR101437663B1 (ko) 2014-09-04

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KR1020070086619A Active KR101437663B1 (ko) 2006-09-15 2007-08-28 금속 알콕시드 화합물, 박막 형성용 원료 및 박막의제조방법

Country Status (6)

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US (1) US8003814B2 (enExample)
JP (1) JP5121196B2 (enExample)
KR (1) KR101437663B1 (enExample)
CN (1) CN101143873B (enExample)
DE (1) DE102007042943A1 (enExample)
TW (1) TWI383990B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219292A (ja) * 2009-03-17 2010-09-30 Tokyo Electron Ltd 成膜方法
US8697486B2 (en) * 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
JP5923351B2 (ja) * 2012-03-16 2016-05-24 株式会社Adeka 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法
KR102251989B1 (ko) 2014-03-10 2021-05-14 삼성전자주식회사 유기 금속 전구체 및 이를 이용한 박막 형성 방법
CN116529416A (zh) * 2020-11-19 2023-08-01 株式会社Adeka 薄膜的制造方法
CN117004923A (zh) * 2022-04-29 2023-11-07 拓荆科技股份有限公司 半导体处理装置
CN117026207A (zh) * 2022-05-10 2023-11-10 株式会社Egtm 铝前驱体及其制造方法、薄层及存储装置制造方法
JP2025102051A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1954268A (en) * 1930-08-05 1934-04-10 Ternstedt Mfg Co Weather strip window sash channel

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US2684972A (en) * 1952-02-21 1954-07-27 Du Pont Production of inorganic esters
GB860353A (en) * 1957-06-20 1961-02-01 Du Pont Improvements in polymerisation of ethylene
JPS60258132A (ja) * 1984-06-04 1985-12-20 Hokko Chem Ind Co Ltd 金属アルコキシドの改良製造法
JPH01172390A (ja) * 1987-12-28 1989-07-07 Hokko Chem Ind Co Ltd 金属アルコキシドの製造方法
JPH01179239A (ja) * 1987-12-29 1989-07-17 Matsushita Electric Ind Co Ltd 光磁気記録媒体の製造方法
JPH05239650A (ja) 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH0660406A (ja) 1992-08-06 1994-03-04 Matsushita Electric Ind Co Ltd 対物レンズ駆動装置
KR0156980B1 (ko) 1995-06-23 1998-12-01 신현주 질화금속 박막증착용 화합물 및 그를 이용한 증착방법
JP4868639B2 (ja) 2000-06-12 2012-02-01 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4693970B2 (ja) 2000-09-14 2011-06-01 株式会社トリケミカル研究所 ゲート酸化膜形成方法
JP3409290B2 (ja) 2000-09-18 2003-05-26 株式会社トリケミカル研究所 ゲート酸化膜形成材料
CN1898192A (zh) * 2003-12-25 2007-01-17 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
DE112005000134T5 (de) * 2004-02-18 2007-02-15 Adeka Corp. Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films
JP2005340405A (ja) * 2004-05-26 2005-12-08 Asahi Denka Kogyo Kk 化学気相成長用原料及び薄膜の製造方法
JP2006182709A (ja) 2004-12-28 2006-07-13 Adeka Corp 薄膜形成用原料、薄膜の製造方法及び金属化合物

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Publication number Priority date Publication date Assignee Title
US1954268A (en) * 1930-08-05 1934-04-10 Ternstedt Mfg Co Weather strip window sash channel

Also Published As

Publication number Publication date
CN101143873A (zh) 2008-03-19
DE102007042943A1 (de) 2008-03-27
JP5121196B2 (ja) 2013-01-16
US8003814B2 (en) 2011-08-23
CN101143873B (zh) 2012-07-25
US20080187662A1 (en) 2008-08-07
JP2008069135A (ja) 2008-03-27
KR20080025301A (ko) 2008-03-20
TWI383990B (zh) 2013-02-01
TW200833701A (en) 2008-08-16

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