CN101143873B - 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 - Google Patents

金属醇盐化合物、薄膜形成用原料及薄膜制造方法 Download PDF

Info

Publication number
CN101143873B
CN101143873B CN2007101527093A CN200710152709A CN101143873B CN 101143873 B CN101143873 B CN 101143873B CN 2007101527093 A CN2007101527093 A CN 2007101527093A CN 200710152709 A CN200710152709 A CN 200710152709A CN 101143873 B CN101143873 B CN 101143873B
Authority
CN
China
Prior art keywords
thin film
raw material
metal alkoxide
alkoxide compound
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007101527093A
Other languages
English (en)
Chinese (zh)
Other versions
CN101143873A (zh
Inventor
和田仙二
阿部彻司
樱井淳
东野贵志
藤本龙作
清水雅子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Asahi Denka Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Denka Kogyo KK filed Critical Asahi Denka Kogyo KK
Publication of CN101143873A publication Critical patent/CN101143873A/zh
Application granted granted Critical
Publication of CN101143873B publication Critical patent/CN101143873B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CN2007101527093A 2006-09-15 2007-09-14 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 Active CN101143873B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006251575A JP5121196B2 (ja) 2006-09-15 2006-09-15 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
JP251575/2006 2006-09-15

Publications (2)

Publication Number Publication Date
CN101143873A CN101143873A (zh) 2008-03-19
CN101143873B true CN101143873B (zh) 2012-07-25

Family

ID=39105366

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101527093A Active CN101143873B (zh) 2006-09-15 2007-09-14 金属醇盐化合物、薄膜形成用原料及薄膜制造方法

Country Status (6)

Country Link
US (1) US8003814B2 (enExample)
JP (1) JP5121196B2 (enExample)
KR (1) KR101437663B1 (enExample)
CN (1) CN101143873B (enExample)
DE (1) DE102007042943A1 (enExample)
TW (1) TWI383990B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219292A (ja) * 2009-03-17 2010-09-30 Tokyo Electron Ltd 成膜方法
US8697486B2 (en) * 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
US20130011579A1 (en) 2010-11-30 2013-01-10 Air Products And Chemicals, Inc. Metal-Enolate Precursors For Depositing Metal-Containing Films
JP5923351B2 (ja) * 2012-03-16 2016-05-24 株式会社Adeka 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法
KR102251989B1 (ko) 2014-03-10 2021-05-14 삼성전자주식회사 유기 금속 전구체 및 이를 이용한 박막 형성 방법
CN116529416A (zh) * 2020-11-19 2023-08-01 株式会社Adeka 薄膜的制造方法
CN117004923A (zh) * 2022-04-29 2023-11-07 拓荆科技股份有限公司 半导体处理装置
CN117026207A (zh) * 2022-05-10 2023-11-10 株式会社Egtm 铝前驱体及其制造方法、薄层及存储装置制造方法
JP2025102051A (ja) * 2023-12-26 2025-07-08 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2684972A (en) * 1952-02-21 1954-07-27 Du Pont Production of inorganic esters
CN1957110A (zh) * 2004-05-26 2007-05-02 株式会社艾迪科 化学气相成长用原料和薄膜的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1954268A (en) * 1930-08-05 1934-04-10 Ternstedt Mfg Co Weather strip window sash channel
GB860353A (en) * 1957-06-20 1961-02-01 Du Pont Improvements in polymerisation of ethylene
JPS60258132A (ja) * 1984-06-04 1985-12-20 Hokko Chem Ind Co Ltd 金属アルコキシドの改良製造法
JPH01172390A (ja) * 1987-12-28 1989-07-07 Hokko Chem Ind Co Ltd 金属アルコキシドの製造方法
JPH01179239A (ja) * 1987-12-29 1989-07-17 Matsushita Electric Ind Co Ltd 光磁気記録媒体の製造方法
JPH05239650A (ja) 1992-02-27 1993-09-17 Kojundo Chem Lab Co Ltd シリコン酸化膜の製造法
JPH0660406A (ja) 1992-08-06 1994-03-04 Matsushita Electric Ind Co Ltd 対物レンズ駆動装置
KR0156980B1 (ko) 1995-06-23 1998-12-01 신현주 질화금속 박막증착용 화합물 및 그를 이용한 증착방법
JP4868639B2 (ja) 2000-06-12 2012-02-01 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4693970B2 (ja) 2000-09-14 2011-06-01 株式会社トリケミカル研究所 ゲート酸化膜形成方法
JP3409290B2 (ja) 2000-09-18 2003-05-26 株式会社トリケミカル研究所 ゲート酸化膜形成材料
CN1898192A (zh) * 2003-12-25 2007-01-17 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
DE112005000134T5 (de) * 2004-02-18 2007-02-15 Adeka Corp. Alkoxidverbindung, Material für die Bildung eines dünnen Films und Verfahren für die Bildung eines dünnen Films
JP2006182709A (ja) 2004-12-28 2006-07-13 Adeka Corp 薄膜形成用原料、薄膜の製造方法及び金属化合物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2684972A (en) * 1952-02-21 1954-07-27 Du Pont Production of inorganic esters
CN1957110A (zh) * 2004-05-26 2007-05-02 株式会社艾迪科 化学气相成长用原料和薄膜的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Goel, S. C.et al.Methylbutenoxy derivatives of various elements.《Z. anorg. allg. Chem.》.1978,第447卷253-256. *
JP平1-172390A 1989.07.07

Also Published As

Publication number Publication date
CN101143873A (zh) 2008-03-19
DE102007042943A1 (de) 2008-03-27
JP5121196B2 (ja) 2013-01-16
US8003814B2 (en) 2011-08-23
US20080187662A1 (en) 2008-08-07
JP2008069135A (ja) 2008-03-27
KR20080025301A (ko) 2008-03-20
TWI383990B (zh) 2013-02-01
TW200833701A (en) 2008-08-16
KR101437663B1 (ko) 2014-09-04

Similar Documents

Publication Publication Date Title
CN101143873B (zh) 金属醇盐化合物、薄膜形成用原料及薄膜制造方法
JP6465699B2 (ja) ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物
JP6184030B2 (ja) アルミニウム化合物、薄膜形成用原料及び薄膜の製造方法
EP3476827B1 (en) Vanadium compound, starting material for thin film formation, and method for producing thin film
KR102724144B1 (ko) 박막 형성용 원료 및 박막의 제조 방법
KR20200037218A (ko) 텅스텐 화합물, 박막 형성용 원료 및 박막의 제조 방법
KR102875898B1 (ko) 아연 화합물, 박막 형성용 원료, 박막 및 그 제조 방법
JP6760822B2 (ja) 化合物、薄膜形成用原料、原子層堆積法用の薄膜形成用原料及び薄膜の製造方法
KR20170004985A (ko) 구리 화합물, 박막 형성용 원료 및 박막의 제조방법
CN110709381A (zh) 金属醇盐化合物、薄膜形成用原料及薄膜的制造方法
CN115362282A (zh) 原子层沉积法用薄膜形成用原料及薄膜的制造方法
JP2011106008A (ja) 化学気相成長用原料及びルテニウム化合物
KR102768702B1 (ko) 박막 형성용 원료, 박막의 제조 방법 및 신규의 스칸듐 화합물
JP4781012B2 (ja) アルコール化合物を配位子とした金属化合物及び薄膜形成用原料並びに薄膜の製造方法
IL266365B1 (en) Compound, raw material for forming a thin layer, method for producing a thin layer and amidine compound
JP6811514B2 (ja) 化合物、薄膜形成用原料及び薄膜の製造方法
KR102859536B1 (ko) 루테늄 화합물, 박막 형성용 원료 및 박막의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant