CN1957110A - 化学气相成长用原料和薄膜的制造方法 - Google Patents
化学气相成长用原料和薄膜的制造方法 Download PDFInfo
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- CN1957110A CN1957110A CNA2005800163385A CN200580016338A CN1957110A CN 1957110 A CN1957110 A CN 1957110A CN A2005800163385 A CNA2005800163385 A CN A2005800163385A CN 200580016338 A CN200580016338 A CN 200580016338A CN 1957110 A CN1957110 A CN 1957110A
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical class C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QATBRNFTOCXULG-UHFFFAOYSA-N n'-[2-(methylamino)ethyl]ethane-1,2-diamine Chemical compound CNCCNCCN QATBRNFTOCXULG-UHFFFAOYSA-N 0.000 description 1
- VIJMMQUAJQEELS-UHFFFAOYSA-N n,n-bis(ethenyl)ethenamine Chemical compound C=CN(C=C)C=C VIJMMQUAJQEELS-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
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- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- KSAVQLQVUXSOCR-UHFFFAOYSA-M sodium lauroyl sarcosinate Chemical class [Na+].CCCCCCCCCCCC(=O)N(C)CC([O-])=O KSAVQLQVUXSOCR-UHFFFAOYSA-M 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
本发明的化学气相成长用原料含有由金属化合物形成的前体,在液相中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.5μm的粒子的数量为100个以下;即使在使用高分解性金属化合物作为前体时,也可以降低薄膜的粒子污染。
Description
技术领域
本发明涉及含有由金属化合物形成的前体、且原料液相中的粒子得以减少的化学气相成长用原料、以及使用了该原料的薄膜制造方法。
背景技术
由金属原子形成的薄膜或者含有金属原子的薄膜可以作为电极、高介电体电容器、强介电体电容器、栅绝缘膜、阻挡膜等电子部件,以及光导波路、光放大器、光开关等光通信部件的材料使用。
作为上述薄膜的制造方法,最合适的制造工艺是包括ALD(原子层沉积)法的化学气相成长法(以下也简称为CVD),该方法具有组成控制性和阶梯覆盖性优异、适合批量生产、且可以混合层叠等许多优点。另外,CVD法所使用的原料是可以在CVD法的工序中以液相形态被输送或供应的原料,该原料在工艺控制、维护等方面容易。
对于使用由烷氧基金属化合物、金属酰胺化合物、β-二酮基金属配位化合物、烷基金属化合物等高分解性或高水解性的金属化合物形成的前体的CVD法,其具有所得的薄膜被粒子污染的问题,降低该问题的方法被例如专利文献1~4所公开。专利文献1公开了一种使用三甲基乙烯基甲硅烷基六氟乙酰基丙酮铜或者四(二甲基氨基)钛的液体CVD法,在该方法中,通过净化气体导入机构部将净化气体线路和反应器连接在一起。另外,专利文献2公开了一种制造钽和钛的复合氧化物薄膜的方法,该方法使用混合了前体的复合烷氧化物。另外,在专利文献3中公开了一种制造硅和铪的复合氧化物或硅和锆的复合氧化物的方法,该方法使用烷氧基硅化合物和烷氧基铪化合物或者与烷氧基锆化合物的混合物。另外,在引用文献4中公开了一种氧化钽的制造方法,该方法可以降低烷氧基钽化合物中的杂质氯。
上述专利文献1记载的方法通过在CVD装置方面下功夫,而抑制粒子的产生;专利文献2和专利文献3各自记载的方法是通过使用复合原料来抑制化学反应产生的粒子;专利文献4记载的方法通过降低原料中的杂质成分来抑制来自杂质的粒子。这些方法中的任何一种都是抑制CVD工艺中产生的粒子的方法。
作为抑制粒子污染的方法,降低使用试剂中的粒子的方法是有效的,对管线洗涤、前体溶剂中使用的有机溶剂以及硅酸四乙酯(TEOS)等低分解性的前体化合物,提供了可以减少粒子的物质。但是,对于使用高分解性金属化合物作为前体的CVD用原料来说,前体本身会由于贮藏容器、填充装置等装置部件、载气、溶剂等中含有的微量水分而产生粒子,因此无法减少粒子。
专利文献1:特开平9-302471号公报
专利文献2:特开2002-53504号公报
专利文献3:特开2002-53960号公报
专利文献4:特开平9-121027号公报
发明内容
因此,本发明的目的在于提供一种使用了高分解性金属化合物作为前体的CVD用原料,且该原料可以降低薄膜的粒子污染。
本发明人等经过认真研究,结果发现通过降低以高分解性金属化合物作为前体的CVD用原料中的粒子,可以抑制薄膜的粒子污染。本发明人等基于该认识,进行进一步的研究,结果发现将特定粒径的粒子降低到特定数量以下的CVD用原料具有抑制粒子污染的效果,从而可以实现上述目的。
本发明是基于上述认识而完成的,提供化学气相成长(CVD)用原料、以及通过使用该CVD原料的化学气相成长法制造含金属的薄膜的方法,该化学气相成长(CVD)用原料含有由金属化合物形成的前体,在液相中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.5μm的粒子的数量为100个以下。
附图说明
图1是表示本发明的CVD用原料的制造中使用的制造装置的一个例子的示意图。
图2是表示本发明的CVD用原料的粒子测定中使用的光散射式液体中的粒子测定装置的一个例子的示意图。
图3是表示本发明的含金属薄膜的制造方法中使用的CVD装置的一个例子的示意图。
具体实施方式
作为构成本发明的前体的金属化合物的金属原子,没有特别的限制,可以选择任意的金属原子,以所希望的组成来构成金属、合金、金属氧化物、复合金属氧化物、金属氮化物、复合金属氮化物、金属碳化物、复合金属碳化物或它们的2种以上的混合物等薄膜。
作为上述金属原子,可以列举出锂、钠、钾、铷、铯等1族元素,铍、镁、钙、锶、钡等2族元素,钪、钇、镧系元素(镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥),锕系元素等3族元素,钛、锆、铪这样的4族元素,钒、铌、钽这样的5族元素,铬、钼、钨这样的6族元素,锰、锝、铼这样的7族元素,铁、钌、锇这样的8族元素,钴、铑、铱这样的9族元素,镍、钯、铂这样的10族元素,铜、银、金这样的11族元素,锌、镉、汞这样的12族元素,铝、镓、铟、铊这样的13族元素,锗、锡、铅这样的14族元素,砷、锑、铋这样的15族元素,钋这样的16族元素。
作为和上述金属原子相结合、构成金属化合物的配位基,可以列举出氯、溴、碘等卤化物,链烷烃类,单烷基胺类,二烷基胺类,三甲基甲硅烷基胺、三乙基甲硅烷基胺等甲硅烷基胺类;甲亚胺、乙亚胺、丙亚胺、2-丙亚胺、丁亚胺、2-丁亚胺、异丁亚胺、叔丁亚胺、戊亚胺、叔戊亚胺等链烷基亚胺类,环戊二烯类,一元醇、二元醇等醇类,乙酰基丙酮、己-2,4-二酮、5-甲基己-2,4-二酮、庚-2,4-二酮、2-甲基庚-3,5-二酮、5-甲基庚-2,4-二酮、6-甲基庚-2,4-二酮、2,2-二甲基庚-3,5-二酮、2,6-二甲基庚-3,5-二酮、2,2,6-三甲基庚-3,5-二酮、2,2,6,6-四甲基庚-3,5-二酮、辛-2,4-二酮、2,2,6-三甲基辛-3,5-二酮、2,6-二甲基辛-3,5-二酮、2,9-二甲基壬-4,6-二酮、2-甲基-6-乙基癸-3,5-二酮、2,2-二甲基-6-乙基癸-3,5-二酮、1,1,1-三氟代戊-2,4-二酮、1,1,1-三氟代-5,5-二甲基己-2,4-二酮、1,1,1,5,5,5-六氟代戊-2,4-二酮、1,3-二全氟代己基丙-1,3-二酮、1,1,5,5-四甲基-1-甲氧基己-2,4-二酮、2,2,6,6-四甲基-1-甲氧基庚-3,5-二酮、2,2,6,6-四甲基-1-(2-甲氧基乙氧基)庚-3,5-二酮等β-二酮类,乙酰乙酸甲酯、乙酰乙酸乙酯、乙酰乙酸丁酯、乙酰乙酸-2-甲氧基乙酯等β-酮酯类等,它们可以只是1种结合到金属原子上,也可以结合了2种以上。
在上述金属化合物中,作为由于具有高分解性或高水解性、因而粒子污染问题被显著地表现出来的化合物,可以列举出使用衍生出下述通式(I)或(II)表示的基团的醇化合物、有机胺化合物或烃化合物作为配位基的烷氧基金属化合物、金属酰胺化合物、烷基金属化合物和环戊二烯配位化合物,本发明的CVD用原料在使用这些金属化合物作为前体时,也可以防止产生粒子污染。另外,作为使用这些配位基的前体中的特别有用的金属化合物,可以列举出铝化合物、钛化合物、锆化合物、铪化合物、钽化合物和铌化合物。
[化1]
(式中,X表示氧原子或氮原子;在X为氧原子时,n表示0,在X为氮原子时,n表示1;R1表示碳原子数为1~10的有机基团,R2表示氢原子或碳原子数为1~10的有机基团。)
[化2]
-R3 (II)
(式中,R3表示碳原子数为1~8的烷基或碳原子数为1~10环戊二烯基)
在上述通式(I)中,作为用R1和R2表示的碳原子数为1~10的有机基团,可以列举出例如甲基、乙基、丙基、异丙基、丁基、仲丁基、叔丁基、异丁基、戊基、异戊基、仲戊基、叔戊基、己基、3-甲基戊-3-基、庚基、3-庚基、异庚基、叔庚基、正辛基、异辛基、叔辛基、2-乙基己基、壬基、癸基、环戊基、环己基、甲基环己基、苯基、甲基苯基、乙基苯基、苄基等烃基;2-甲氧基乙基、2-乙氧基乙基、2-丁氧基乙基、2-(2-甲氧基乙氧基)乙基、3-甲氧基丙基、2-甲氧基-1-甲基乙基、2-甲氧基-1,1-二甲基乙基、2-乙氧基-1-甲基乙基、2-乙氧基-1,1-二甲基乙基、2-异丙氧基-1,1-二甲基乙基、2-丁氧基-1,1-二甲基乙基、2-(2-甲氧基乙氧基)-1,1-二甲基乙基等醚基烷基;三氟甲基、1,1,1-三氟乙基、五氟乙基等氟代烷基,2-(二甲基氨基)乙基、2-(二乙基氨基)乙基、2-(乙基甲基)氨基乙基、3-(二甲基氨基)丙基、2-(二甲基氨基)-1-甲基乙基、2-(二乙基氨基)-1-甲基乙基、2-(二甲基氨基)-1,1-二甲基乙基、2-(二乙基氨基)-1,1-二甲基乙基、2-(乙基甲基氨基)-1,1-二甲基乙基等氨基烷基。
另外,具有上述通式(I)表示的基团的金属化合物是在金属原子上结合至少1个通式(I)表示的基团的化合物,通常使用可以配位的所有位置都配位了的化合物。而且,还可以是单独(monomeric)的烷氧基金属化合物、金属酰胺化合物,也可以是二烷氧化物这样的复合金属化合物。另外,它们不受位置异构体和光学异构体的划分。此外,R1或R2的末端在为二烷基氨基和烷氧基这样的供电子基团时,该供电子基可以和金属原子相配位。另外,在本发明中,在便利方面,这种供电子基可以以不和金属原子配位的形式表示。
在本发明的上述通式(II)中,作为R3表示的碳原子数为1~8的烷基,可以列举出甲基、乙基、丙基、异丙基、丁基、仲丁基、叔丁基、异丁基、戊基、异戊基、仲戊基、叔戊基、己基、庚基、3-庚基、异庚基、叔庚基、正辛基、异辛基、叔辛基、2-乙基己基等,作为碳原子数为1~10的环戊二烯基,可以列举出环戊二烯基、甲基环戊二烯基、乙基环戊二烯基、丙基环戊二烯基、异丙基环戊二烯基、丁基环戊二烯基、叔丁基环戊二烯基、二甲基环戊二烯基、五甲基环戊二烯基等。
可以作为本发明的前体使用的铝化合物,可以列举出例如下述通式(III)或(IV)表示的化合物。
[化3]
(式中,L表示具有氮原子或氧原子的5~6元环的配位性杂环化合物,Ri表示碳原子数为1~4的烷基,q’表示0~2的整数。)
在上述通式(III)中,作为L表示的配位性杂环化合物,可以列举出18-冠醚-6、二环己基-18-冠醚-6、24-冠醚-8、二环己基-24-冠醚-8、二苯并-24-冠醚-8等冠醚类,cyclam、Cyclen等环状多胺类,吡啶、吡咯烷、哌啶、吗啉、N-甲基吡咯烷、N-甲基哌啶、N-甲基吗啉、四氢呋喃、四氢吡喃、1,4-二噁烷、噁唑、噻唑、氧硫杂环戊烷(Oxathiolane)等。另外,在上述通式(IV)中,作为Ri表示的碳原子数为1~4的烷基,可以列举出甲基、乙基、丙基、异丙基、丁基、仲丁基、叔丁基、异丁基等。作为上述通式(III)或(IV)表示的化合物的具体例子,可以列举出三甲基铝、N-甲基吡咯烷基铝(N-methylpyrrolidinylalane)等。
作为可以用作本发明的前体的钛化合物、锆化合物和铪化合物,可以列举出例如下述通式(V)或(VI)表示的化合物。
[化4]
(式中,Ra和Rb表示碳原子数为1~10的有机基团,M1表示钛、锆或铪,R1和R2表示和上述通式(I)相同的基团,x表示1、2、3或4。)
在上述通式(V)中,作为Ra和Rb表示的碳原子数为1~10的有机基团,可以列举出以上述通式(I)的R1例示的基团。作为上述通式(V)表示的化合物的具体例子,可以列举出下述化合物1~39。
[化5]
化合物1 化合物2 化合物3
化合物4 化合物5 化合物6
化合物7 化合物8 化合物9
[化6]
化合物10 化合物11 化合物12
化合物13 化合物14 化合物15
[化7]
化合物16 化合物17 化合物18
化合物19 化合物20 化合物21
[化8]
化合物22 化合物23 化合物24
化合物25 化合物26 化合物27
化合物28 化合物29 化合物30
[化9]
化合物31 化合物32 化合物33
[化10]
化合物34 化合物35 化合物36
化合物37 化合物38 化合物39
作为上述通式(VI)表示的化合物的具体例子,可以列举出下述化合物40~51。
[化11]
化合物40 化合物41 化合物42 化合物43
化合物44 化合物45 化合物46 化合物47
化合物48 化合物49 化合物50 化合物51
作为可以用作本发明的前体的钽化合物和铌化合物,可以列举出例如下述通式(VII)或(VIII)表示的化合物。
[化12]
(式中,Ra和Rb表示碳原子数为1~10的有机基团,Rc表示碳原子数为1~5的烷基,M2表示铌或钽,R1和R2表示和上述通式(I)相同的基团,y表示1、2、3、4或5,z表示0、1或2。)
在上述通式(VII)和(VIII)中,作为Ra和Rb表示的碳原子数为1~10的有机基团,可以列举出上述通式(I)的R1例示的基团;作为Rc表示的碳原子数为1~5的烷基,可以列举出甲基、乙基、丙基、异丙基、丁基、仲丁基、叔丁基、异丁基、戊基、异戊基、仲戊基、叔戊基。作为上述通式(VII)表示的化合物的具体例子,可以列举出下述化合物52~74。
[化13]
化合物52 化合物53 化合物54
化合物55 化合物56 化合物57
化合物58 化合物59 化合物60
化合物61 化合物62
[化14]
化合物63 化合物64 化合物65
化合物66 化合物67 化合物68
[化15]
化合物69 化合物70 化合物71
化合物72 化合物73 化合物74
作为上述通式(VIII)表示的化合物的具体例子,可以列举出下述化合物75~92。
[化16]
化合物75 化合物76 化合物77
化合物78 化合物79 化合物80
化合物81 化合物82 化合物83
[化17]
化合物84 化合物85 化合物86
化合物87 化合物88 化合物89
化合物90 化合物91 化合物92
作为可以用作本发明的前体的双烷氧化物型前体,可以列举出例如下述通式(IX)表示的化合物。
[化18]
(式中,Rd表示碳原子数为1~10的有机基团,R1表示和上述通式(I)相同的基团,M3和M4中的至少一个表示钛、锆、铪、铌或钽,另一个表示金属原子,p表示1或2,q+r表示分子中含有的金属原子M3和金属原子M4的价数的总和。)
在上述通式(IX)中,作为Rd表示的碳原子数为1~10的有机基团,可以列举出R1例示的基团,作为M3和M4表示的金属原子,可以列举出“具体实施方式”部分第二段中所例示的物质。作为上述通式(IX)表示的化合物的具体例子,可以列举出下述化合物93~115。
[化19]
化合物93 化合物94 化合物95
化合物96 化合物97 化合物98
化合物99 化合物100 化合物101
[化20]
化合物102 化合物103 化合物104
化合物105 化合物106
[化21]
化合物107 化合物108 化合物109
[化22]
化合物110 化合物111
化合物112 化合物113
化合物114 化合物115
本发明的化学气相成长(CVD)用原料是含有上述金属化合物作为薄膜前体的原料,其特征在于:在液相中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.5μm的粒子的数量为100个以下。
本发明的CVD用原料的形态可以根据使用的CVD法的输送供应方法等手段而适当选择。输送供应方法包括:将CVD用原料在原料容器中加热和/或减压进行气化,与根据需要使用的氩、氮、氦等载气一起导入堆积反应部的气体输送法;将CVD用原料以液体或溶液状态,输送到气化室,在气化室中加热和/或减压进行气化,之后导入堆积反应部的液体输送法。在为气体输送法时,作为前体的金属化合物本身成为CVD用原料;在为液体输送法时,作为前体的金属化合物本身或前体溶解到有机溶剂所形成的溶液是CVD用原料。
另外,在多成分体系的CVD法中,记载有将CVD用原料的各成分独立地气化、供应的方法(以下也记做单源法);和将多成分原料预先以所希望的组成混合,将混合之后的混合原料气化、供应的方法(以下也记做混合源法)。在为混合源法时,金属化合物的混合物、或2种以上的金属化合物溶解到有机溶剂中的混合溶液是CVD用原料。
因此,所述的本发明的CVD用原料的液相状态是指以下2种情况。第1种是金属化合物本身或金属化合物的混合物的情形。这种情况是在CVD法中,以液体状态输送供应CVD原料的温度区域下的液体状态,其温度通常为150℃以下。另一种是将1种或2种以上的金属化合物溶解到有机溶剂中形成的溶液状态。通常,在使用熔点高的金属化合物作为前体的情形以及使用金属化合物的混合物作为前体的情形中,选择使用该溶液的溶液供应法。
作为在溶液供应法的情况下的CVD用原料中使用的有机溶剂,没有特别的限定,可以使用公知的普通的有机溶剂。作为该有机溶剂,可以列举出例如甲醇、乙醇、2-丙醇、正丁醇等醇类,乙酸乙酯、乙酸丁酯、乙酸甲氧基乙酯等乙酸酯类,乙二醇单甲基醚、乙二醇单乙基醚、乙二醇单丁基醚、二甘醇单甲基醚等醚醇类,四氢呋喃、四氢吡喃、乙二醇二甲基醚、二甘醇二甲基醚、三甘醇二甲基醚、二丁基醚、二噁烷等醚类,甲基丁基酮、甲基异丁基酮、乙基丁基酮、二丙基酮、二异丁基酮、甲基戊基酮、环己酮、甲基环己酮等酮类,己烷、环己烷、甲基环己烷、二甲基环己烷、乙基环己烷、庚烷、辛烷、甲苯、二甲苯等烃类,1-氰基丙烷、1-氰基丁烷、1-氰基己烷、氰基环己烷、氰基苯、1,3-二氰基丙烷、1,4-二氰基丁烷、1,6-二氰基己烷、1,4-二氰基环己烷、1,4-二氰基苯等具有氰基的烃类,吡啶、二甲基吡啶;根据作为溶质的前体的溶解性、使用温度和沸点、燃点的关系等,它们可以单独使用,或者使用2种以上的混合溶剂。在使用这些有机溶剂时,该有机溶剂中的前体的总量优选为0.01~2.0mol/升,特别优选为0.05~1.0mol/升。
另外,在本发明的CVD用原料中,根据需要可以含有亲核试剂以便对前体赋予稳定性。作为该亲核试剂,可以列举出甘醇二甲醚、二甘醇二甲醚、三甘醇二甲醚、四甘醇二甲醚等乙二醇醚类,18-冠醚-6、二环己基-18-冠醚-6、24-冠醚-8、二环己基-24-冠醚-8、二苯并-24-冠醚-8等冠醚类,乙二胺、N,N’-四甲基乙二胺、二亚乙基三胺、三亚乙基四胺、四亚乙基五胺、五亚乙基六胺、1,1,4,7,7-五甲基二亚乙基三胺、1,1,4,7,10,10-六甲基三亚乙基四胺、三乙氧基三亚乙基胺等多胺类,cyclam、Cyclen等环状多胺类,吡啶、吡咯烷、哌啶、吗啉、N-甲基吡咯烷、N-甲基哌啶、N-甲基吗啉、四氢呋喃、四氢吡喃、1,4-二噁烷、噁唑、噻唑、氧硫杂环戊烷(oxathiolane)等杂环化合物类,乙酰乙酸甲酯、乙酰乙酸乙酯、乙酰乙酸-2-甲氧基乙基酯等β-酮基酯类或乙酰基丙酮、2,4-己二酮、2,4-庚二酮、3,5-庚二酮、二叔戊酰基甲烷等β-二酮类,作为稳定剂的这些亲核试剂相对于1mol前体,优选使用0.1mol~10mol,更优选使用1~4mol。
本发明的CVD用原料,在液相中,通过光散射式液体中的粒子检测器测定粒子时,在1毫升液相中大于0.5μm的粒子的数量为100个以下,优选大于0.3μm的粒子的数量为100个以下,更优选为在1毫升液相中大于0.2μm的粒子的数量为1000个以下,特别优选为100个以下。
本发明的CVD用原料在液相中的粒子测定是通过光散射式液体中粒子测定方法进行的,可以使用以激光作为光源的市售的测定装置测定。对于测定来说,优选测定前进行真空加热干燥,从而使测定体系的CVD用原料所接触的配管、阀门等部件的水分充分地变干。
本发明的CVD用原料的制造方法没有特别的限定,可以根据常规方法制造。本发明的CVD用原料例如可以按照下述方法获得:对金属化合物、根据需要使用的有机溶剂或亲核试剂、填充和净化等使用的惰性气体等使用的原材料进行充分地精制和脱水,同时制造装置和精制装置使用进行了清洁净化的装置,而且在制造工序中插入使用了适当的材料和规格的过滤器的过滤工序。
在金属化合物的精制中,金属化合物尽量不含杂质金属元素成分、杂质氯等卤素成分、有机物杂质。作为杂质金属元素成分,以每种元素计,优选为100ppb以下,更优选为10ppb以下,以总量计,优选为1ppm以下,更优选为100ppb以下。杂质氯等卤素成分优选为100ppm以下,更优选为10ppm以下,进一步优选为1ppm以下。对于有机杂质,以总量计,优选为500ppm以下,更优选为50ppm以下,进一步优选为10ppm以下。另外,由于水分是CVD用原料中的粒子产生或利用CVD法产生粒子的原因,所以对于金属化合物、有机溶剂和亲核试剂,为了降低它们各自的水分,在使用时尽可能预先除去水分。在金属化合物、有机溶剂和亲核试剂中的水分量分别优选为10ppm以下,更优选为1ppm以下。
上述过滤工序中使用的过滤器的材料可以是纤维素、PTFE树脂等有机材料,也可以是以不锈钢材料为代表的金属、玻璃纤维、石英、硅藻土、陶瓷等无机材料。另外,不仅仅是液体用过滤器,还可以是气体用过滤器。对于过滤器的规格,过滤精度优选为1μm~0.0001μm的范围。
另外,上述过滤器可以使用1种,也可以将2种以上组合使用。在将过滤器组合使用时,例如可以采用以下方法:将PTFE树脂等有机材料过滤器作为一次或低次过滤器,以石英或金属等无机材料过滤器作为二次或高次过滤器的方法;以过滤精度低的过滤器作为低次过滤器,以过滤精度高的过滤器作为高次过滤器的方法;组合这些方法的方法等。特别是,SUS类金属材料的气体用过滤器,除去的气体少,可以容易地除去过滤器中的水分,所以通过将其作为高次过滤器,可以不降低生产率地制造本发明的CVD用原料。另外,对CVD用原料的过滤器的通过流量或压力等过滤条件,也没有特别限定,对CVD用原料可以选择适当的值。
本发明的含金属的薄膜的制造方法是利用CVD法的方法,即,使用本发明的CVD用原料、将其气化,将蒸汽以及根据需要使用的反应性气体导入到基板上,接着,将前体在基板上分解和/或反应,进而使薄膜在基板上成长、堆积。对原料的输送供应方法、堆积方法、制造条件、制造装置等也没有特别的限制,可以使用公知的一般的条件、方法等。
对于上述根据需要使用的反应性气体,例如作为氧化性气体,可以列举出氧、臭氧、二氧化氮、一氧化氮、水蒸气、过氧化氢、甲酸、乙酸、醋酸酐等,作为还原性气体,可以列举出氢,而且,作为制造氮化物的物质,可以列举出单烷基胺、二烷基胺、三烷基胺、亚烷基二胺等有机胺化合物、肼、氨等。
另外,作为上述输送供应方法,可以列举出前述记载的气体输送法、液体输送法、单源法、混合源法等。
另外,作为上述的堆积方法,可以列举出只通过热量使原料气或者原料气和反应气进行反应,并堆积薄膜的热CVD;使用热和等离子的等离子CVD;使用热和光的光CVD;使用热、光和等离子的光等离子CVD;将CVD的堆积反应分解为基本过程,以分子级进行阶段性堆积的ALD(Atomic Layer Deposition)。
另外,作为上述制造条件,可以列举出反应温度(基板温度)、反应压力、堆积速度等。反应温度是本发明的金属化合物充分反应的温度,优选为150℃以上,更优选为200~800℃。另外,反应压力在为热CVD或光CVD时,优选为大气压~10Pa;在使用等离子时,优选为10~2000Pa。另外,堆积速度可以通过原料的供应条件(气化温度、气化压力)、反应温度、反应压力来控制。如果堆积速度较快,则所得的薄膜的性质可能恶化,如果速度慢,则可能产生生产率方面的问题,所以堆积速度优选为0.5~5000nm/分钟,更优选为1~1000nm/分钟。另外,在为ALD时,为了获得所希望的膜厚,控制循环次数。
另外,在本发明的含金属薄膜的制造方法中,在薄膜堆积后,为了得到更良好的电特性,可以在惰性气氛下、氧化性气氛下或还原性气氛下进行退火处理,在必须进行阶梯埋入的情况下,可以设置回流工序。此时的温度优选为400~1200℃,更优选为500~800℃。
通过使用本发明的CVD用原料制造本发明的含金属薄膜的制造方法制造的薄膜可以制成金属、合金、氧化物陶瓷、氮化物陶瓷、碳化物陶瓷等所希望的种类的薄膜。作为这些薄膜的用途,可以列举出高介电性电容器膜、栅绝缘膜、栅膜、强介电性电容器膜、冷凝器膜、阻挡膜等电子部件材料,光纤、光导波路、光放大器器、光开光等光学玻璃部材等。
实施例
以下,举出实施例、比较例和评价例,对本发明进行更详细的说明。但是,本发明并不受到以下实施例等的任何限制。
[实施例1]CVD用原料No.1的制造
根据下述表示的条件,使用图1表示的装置,对由化合物8形成的前体除去粒子,得到CVD用原料No.1。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07cm2,额定过滤精度(液):0.1μm
过滤器B:未使用
过滤速度:10ml/min
[实施例2]CVD用原料No.2的制造
根据下述所示的条件,使用图1所示的装置,对由化合物8形成的前体除去粒子,得到CVD用原料No.2。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:3.14cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例3]CVD用原料No.3的制造
根据下述所示的条件,使用图1所示的装置,对由化合物51形成的前体除去粒子,得到CVD用原料No.3。
(条件)
过滤器A:未使用
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:43.8cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例4]CVD用原料No.4的制造
根据下述所示的条件,使用图1所示的装置,对由化合物51形成的前体除去粒子,得到CVD用原料No.4。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:7.54cm2,额定过滤精度:0.003μm
过滤速度:10ml/min
[实施例5]CVD用原料No.5的制造
根据下述所示的条件,使用图1所示的装置,对由化合物5形成的前体除去粒子,得到CVD用原料No.5。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:3.14cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例6]CVD用原料No.6的制造
根据下述所示的条件,使用图1所示的装置,对由化合物89形成的前体除去粒子,得到CVD用原料No.6。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:3.14cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例7]CVD用原料No.7的制造
根据下述所示的条件,使用图1所示的装置,对由化合物110形成的前体除去粒子,得到CVD用原料No.8。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:43.8cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例8]CVD用原料No.8的制造
根据下述所示的条件,使用图1所示的装置,对由三甲基铝形成的前体除去粒子,得到CVD用原料No.8。
(条件)
过滤器A:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:43.8cm2,额定过滤精度(气):0.05μm
过滤速度:10ml/min
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:3.14cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[实施例9]CVD用原料No.9的制造
根据下述所示的条件,使用图1所示的装置,对由1摩尔份的二(2,2,6,6-四甲基庚-3,5-二酮基)铅、0.5摩尔份化合物3和0.5摩尔份化合物5的辛烷溶液源(辛烷含量为75质量%)形成的前体除去粒子,得到CVD用原料No.9。
(条件)
过滤器A:外壳:PFA,过滤器:PTFE,有效过滤面积:0.07m2,额定过滤精度(液):0.1μm
过滤器B:外壳:SUS-316L,过滤器:SUS-316L,有效过滤面积:7.54cm2,额定过滤精度(气):0.003μm
过滤速度:10ml/min
[评价例]粒子的测定
使用图2所示的光散射式液体中粒子测定装置,根据下述所示的条件1和2,分别对上述实施例1~9得到的CVD用原料和比较例1、2的CVD用原料进行粒子测定。结果如表1所示。
(条件1)
检出粒子:>0.5μm
光散射式液体中粒子测定装置:KS-40B(Rion公司制造)
最大额定粒子浓度:1200pcs/ml(0.5μm粒子的计数损失为5%)
检测界限:0.1个/ml
测定流量:10ml/min
(条件2)
检出粒子:>0.2μm和>0.3μm
光散射式液体中粒子测定装置:KS-28E(Rion公司制造)
最大额定粒子浓度:1200pcs/ml(检出最小粒子的计数损失为5%)
检测界限:0.1个/ml
测定流量:10ml/min
[表1]
CVD用原料 | >0.5μm(pcs/ml) | >0.3μm(pcs/ml) | >0.2μm(pcs/ml) |
实施例1:CVD用原料No.1 | 检测界限以下 | 3.9 | 506 |
实施例2:CVD用原料No.2 | 检测界限以下 | 3.0 | 6.2 |
实施例3:CVD用原料No.3 | 40.8 | 超过1200 | 超过1200 |
实施例4:CVD用原料No.4 | 检测界限以下 | 8.6 | 41.8 |
实施例5:CVD用原料No.5 | 检测界限以下 | 4.8 | 8.2 |
实施例6:CVD用原料No.6 | 检测界限以下 | 3.6 | 7.5 |
实施例7:CVD用原料No.7 | 检测界限以下 | 4.0 | 7.7 |
实施例8:CVD用原料No.8 | 检测界限以下 | 5.3 | 18.8 |
实施例9:CVD用原料No.9 | 检测界限以下 | 1.2 | 2.9 |
比较例1:化合物8 | 172 | 超过1200 | 超过1200 |
比较例2:化合物51 | 817 | 超过1200 | 超过1200 |
比较例是对通过过滤器前的金属化合物进行测定。
[实施例10]氧化铪薄膜的制造
使用上述实施例3得到的CVD用原料No.3,通过图3所示的CVD装置,根据以下条件和工序,制造氧化铪薄膜。对所得的薄膜,通过暗视式晶片异物检查装置测定0.1~0.3μm的粒子。测定结果如下所示。
(条件)
反应温度(基板温度):200℃、反应性气体:氧/臭氧(摩尔)=1/1
(工序)
以下述(1)~(4)构成的一系列的工序为一个周期,重复80个周期,最后在500℃下进行3分钟退火处理。
(1)将在气化室温度为150℃、气化室压力为2000~2200Pa的条件下气化的CVD用原料的蒸汽导入,在系统压力为2000~2200Pa下堆积2秒钟。
(2)通过3秒钟的氩净化,除去未反应的原料。
(3)导入反应性气体,在系统压力为1300Pa下反应2秒钟。
(4)通过2秒钟的氩净化,除去未反应的原料。
(结果)
粒子数:1.16个/平方英寸
[实施例11]氧化铪薄膜的制造
除了使用上述实施例4得到的CVD用原料No.4以外,使用和上述实施例10相同的方法,制造氧化铪薄膜,对所得的薄膜测定粒子。
(结果)
粒子数:0.11个/平方英寸
[比较例3]氧化铪薄膜的制造
除了使用上述表1记载的比较例2的CVD用原料作为CVD用原料以外,使用和上述实施例10相同的方法,制造氧化铪薄膜,对所得的薄膜测定粒子。
(结果)
粒子数:14.4个/平方英寸
根据本发明,可以提供粒子被减少了的CVD用原料,通过使用该CVD用原料,可以制造粒子污染得以抑制的薄膜。另外,根据本发明,可以提供使用了该CVD用原料的薄膜的制造方法。
Claims (10)
1.一种化学气相成长用原料,该原料含有由金属化合物形成的前体,在液相中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.5μm的粒子的数量为100个以下。
2.根据权利要求1所记载的化学气相成长用原料,其中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.3μm的粒子的数量为100个以下。
3.根据权利要求1或2所记载的化学气相成长用原料,其中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.2μm的粒子的数量为1000个以下。
4.根据权利要求3所记载的化学气相成长用原料,其中利用光散射式液体中粒子检测器进行的粒子测定中,在1毫升液相中大于0.2μm的粒子的数量为100个以下。
5.根据权利要求1~4任一项所记载的化学气相成长用原料,其中所述前体由具有用下述通式(I)表示的基团与金属原子相结合的结构的金属化合物形成,
式中,X表示氧原子或氮原子;在X为氧原子时,n表示0,在X为氮原子时,n表示1;R1表示碳原子数为1~10的有机基团,R2表示氢原子或碳原子数为1~10的有机基团。
6.根据权利要求1~4任一项所记载的化学气相成长用原料,其中所述前体由具有用下述通式(II)表示的基团与金属原子相结合的结构的金属化合物形成,
-R3 (II)
式中,R3表示碳原子数为1~8的烷基或碳原子数为1~10环戊二烯基。
7.根据权利要求1~6任一项所记载的化学气相成长用原料,其中所述金属化合物选自铝化合物、钛化合物、锆化合物、铪化合物、钽化合物和铌化合物。
8.根据权利要求7所记载的化学气相成长用原料,其中所述金属化合物是铪化合物。
9.根据权利要求1~8任一项所记载的化学气相成长用原料,其中该原料以液相形态被输送或供应。
10.制造含有金属的薄膜的方法,其是通过使用了权利要求1~9任一项记载的化学气相成长用原料的化学气相成长法来进行制造。
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JP2004155543A JP2005340405A (ja) | 2004-05-26 | 2004-05-26 | 化学気相成長用原料及び薄膜の製造方法 |
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EP (1) | EP1754800A4 (zh) |
JP (1) | JP2005340405A (zh) |
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CN101143873B (zh) * | 2006-09-15 | 2012-07-25 | 株式会社艾迪科 | 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 |
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JP5063074B2 (ja) * | 2006-10-03 | 2012-10-31 | 株式会社Adeka | 薄膜形成用原料、薄膜の製造方法及び亜鉛化合物 |
JP5776555B2 (ja) * | 2010-01-07 | 2015-09-09 | 宇部興産株式会社 | 金属アルコキシド化合物及び当該化合物を用いた金属含有薄膜の製造法 |
WO2012148085A2 (ko) * | 2011-04-26 | 2012-11-01 | 한국화학연구원 | 안티몬 아미노 알콕사이드 화합물 및 이의 제조 방법, 이 안티몬 아미노 알콕사이드 화합물을 이용하고 원자층 증착 기술을 이용하는 안티몬을 포함하는 박막의 형성 방법 |
FR2989517B1 (fr) * | 2012-04-12 | 2015-01-16 | Commissariat Energie Atomique | Reprise de contact sur substrat semi-conducteur heterogene |
KR20190042461A (ko) | 2017-10-14 | 2019-04-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Beol 인터커넥트를 위한 고온 pvd 구리 증착을 이용한 ald 구리의 집적 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4073647A (en) * | 1976-04-26 | 1978-02-14 | The United States Of America As Represented By The United States Department Of Energy | Preparation of cermets |
US5006248A (en) * | 1989-10-23 | 1991-04-09 | Wisconsin Alumni Research Foundation | Metal oxide porous ceramic membranes with small pore sizes |
US5182143A (en) * | 1990-02-28 | 1993-01-26 | Lord Corporation | Layered sol-gel coatings |
US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
US5104539A (en) * | 1990-08-06 | 1992-04-14 | Wisconsin Alumni Research Foundation | Metal oxide porous ceramic membranes with small pore sizes |
US5149596A (en) * | 1990-10-05 | 1992-09-22 | The United States Of America As Represented By The United States Department Of Energy | Vapor deposition of thin films |
GB2249546B (en) * | 1990-10-08 | 1995-07-05 | Matsushita Electric Works Ltd | Sintered ceramic-metal composite product and method of fabricating the same |
US5844350A (en) * | 1992-12-18 | 1998-12-01 | General Electric Company | Coated arc tube for sodium vapor lamp |
US5653813A (en) * | 1995-04-03 | 1997-08-05 | Novellus Systems, Inc. | Cyclone evaporator |
US5972428A (en) * | 1996-03-05 | 1999-10-26 | Symetrix Corporation | Methods and apparatus for material deposition using primer |
US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
US6268014B1 (en) * | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
US6101816A (en) * | 1998-04-28 | 2000-08-15 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
JP3334605B2 (ja) * | 1998-05-07 | 2002-10-15 | 三菱電機株式会社 | 電極形成用cvd原料、およびそれを用いて形成されたキャパシタ用電極、配線膜 |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
US6465044B1 (en) * | 1999-07-09 | 2002-10-15 | Silicon Valley Group, Thermal Systems Llp | Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone |
US6562761B1 (en) * | 2000-02-09 | 2003-05-13 | American Superconductor Corporation | Coated conductor thick film precursor |
JP4705744B2 (ja) * | 2000-01-14 | 2011-06-22 | インテグリス・インコーポレーテッド | 中性フィルタ材料に基づく液体濾過のための方法 |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
JP2002155008A (ja) * | 2000-11-13 | 2002-05-28 | Kojundo Chem Lab Co Ltd | 鉛ビス(β−ジケトネート)の製造方法 |
US6951666B2 (en) * | 2001-10-05 | 2005-10-04 | Cabot Corporation | Precursor compositions for the deposition of electrically conductive features |
US6787181B2 (en) * | 2001-10-26 | 2004-09-07 | Symetrix Corporation | Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth |
JP3822135B2 (ja) * | 2002-05-13 | 2006-09-13 | 日本パイオニクス株式会社 | 気化供給装置 |
KR100513719B1 (ko) * | 2002-08-12 | 2005-09-07 | 삼성전자주식회사 | 하프늄 산화막 형성용 전구체 및 상기 전구체를 이용한하프늄 산화막의 형성방법 |
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Cited By (1)
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CN101143873B (zh) * | 2006-09-15 | 2012-07-25 | 株式会社艾迪科 | 金属醇盐化合物、薄膜形成用原料及薄膜制造方法 |
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WO2005116292A1 (ja) | 2005-12-08 |
KR20070026458A (ko) | 2007-03-08 |
EP1754800A1 (en) | 2007-02-21 |
EP1754800A4 (en) | 2011-05-11 |
US20070190249A1 (en) | 2007-08-16 |
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US20100126351A1 (en) | 2010-05-27 |
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