JP5118110B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5118110B2
JP5118110B2 JP2009211855A JP2009211855A JP5118110B2 JP 5118110 B2 JP5118110 B2 JP 5118110B2 JP 2009211855 A JP2009211855 A JP 2009211855A JP 2009211855 A JP2009211855 A JP 2009211855A JP 5118110 B2 JP5118110 B2 JP 5118110B2
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JP
Japan
Prior art keywords
light emitting
emitting device
wiring pattern
substrate
sealing body
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Active
Application number
JP2009211855A
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English (en)
Japanese (ja)
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JP2009290244A5 (fr
JP2009290244A (ja
Inventor
正宏 小西
誠 英賀谷
俊雄 幡
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Sharp Corp
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Sharp Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41459082&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5118110(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2009211855A priority Critical patent/JP5118110B2/ja
Publication of JP2009290244A publication Critical patent/JP2009290244A/ja
Publication of JP2009290244A5 publication Critical patent/JP2009290244A5/ja
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Publication of JP5118110B2 publication Critical patent/JP5118110B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2009211855A 2009-09-14 2009-09-14 発光装置 Active JP5118110B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009211855A JP5118110B2 (ja) 2009-09-14 2009-09-14 発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009211855A JP5118110B2 (ja) 2009-09-14 2009-09-14 発光装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007067362A Division JP4753904B2 (ja) 2007-03-15 2007-03-15 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010129024A Division JP5442534B2 (ja) 2010-06-04 2010-06-04 発光装置

Publications (3)

Publication Number Publication Date
JP2009290244A JP2009290244A (ja) 2009-12-10
JP2009290244A5 JP2009290244A5 (fr) 2010-03-18
JP5118110B2 true JP5118110B2 (ja) 2013-01-16

Family

ID=41459082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009211855A Active JP5118110B2 (ja) 2009-09-14 2009-09-14 発光装置

Country Status (1)

Country Link
JP (1) JP5118110B2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4753904B2 (ja) 2007-03-15 2011-08-24 シャープ株式会社 発光装置
JP5263658B2 (ja) 2007-11-30 2013-08-14 東芝ライテック株式会社 照明装置
JP5157836B2 (ja) 2008-11-12 2013-03-06 東芝ライテック株式会社 照明器具
JP5623062B2 (ja) 2009-11-13 2014-11-12 シャープ株式会社 発光装置およびその製造方法
JP2011151268A (ja) 2010-01-22 2011-08-04 Sharp Corp 発光装置
CN102163602B (zh) 2010-02-16 2015-01-14 东芝照明技术株式会社 发光装置以及具备此发光装置的照明装置
JP5708983B2 (ja) 2010-03-29 2015-04-30 東芝ライテック株式会社 照明装置
JP5747546B2 (ja) 2010-03-29 2015-07-15 東芝ライテック株式会社 照明装置
JP5846408B2 (ja) 2010-05-26 2016-01-20 東芝ライテック株式会社 発光装置および照明装置
JP5459104B2 (ja) * 2010-06-28 2014-04-02 東芝ライテック株式会社 発光モジュール及びこれを備えた照明器具
CN103907211B (zh) 2011-10-31 2017-03-15 夏普株式会社 发光装置、照明装置以及发光装置的制造方法
JP6072472B2 (ja) * 2012-08-27 2017-02-01 シチズン電子株式会社 Ｌｅｄ発光装置
WO2014049973A1 (fr) * 2012-09-26 2014-04-03 パナソニック株式会社 Module électroluminescent
JP5844317B2 (ja) * 2013-08-08 2016-01-13 シャープ株式会社 Ｌｅｄ電球
EP3591346B1 (fr) * 2018-07-02 2020-11-11 Dr. Johannes Heidenhain GmbH Procédé de fabrication d'une source lumineuse pour une unité de capteur de position d'un dispositif de mesure de position ainsi que dispositif de mesure de position

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
JP2004172577A (ja) * 2002-10-30 2004-06-17 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP5138145B2 (ja) * 2002-11-12 2013-02-06 日亜化学工業株式会社 蛍光体積層構造及びそれを用いる光源
JP4143043B2 (ja) * 2004-05-26 2008-09-03 京セラ株式会社 発光装置および照明装置
JP2006049715A (ja) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 発光光源、照明装置及び表示装置
JP2006222412A (ja) * 2005-01-17 2006-08-24 Citizen Electronics Co Ltd 発光装置
JP2006295084A (ja) * 2005-04-14 2006-10-26 Citizen Electronics Co Ltd 発光ダイオードのパッケージ構造
JP4241658B2 (ja) * 2005-04-14 2009-03-18 シチズン電子株式会社 発光ダイオード光源ユニット及びそれを用いて形成した発光ダイオード光源
JP4756682B2 (ja) * 2005-05-16 2011-08-24 シチズン電子株式会社 発光ダイオード光源ユニット及びバルブ型発光ダイオード光源
JP2006332234A (ja) * 2005-05-25 2006-12-07 Hitachi Aic Inc 反射機能を有するｌｅｄ装置
JP2006351708A (ja) * 2005-06-14 2006-12-28 Toyoda Gosei Co Ltd 発光ダイオードランプ及び光源装置
US20070023765A1 (en) * 2005-07-29 2007-02-01 Thomas Alan C Acicular ITO for LED array

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JP2009290244A (ja) 2009-12-10

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