JP5113961B2 - バイポーラｍｏｓｆｅｔ素子 - Google Patents

バイポーラｍｏｓｆｅｔ素子 Download PDF

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Publication number
JP5113961B2
JP5113961B2 JP2007525352A JP2007525352A JP5113961B2 JP 5113961 B2 JP5113961 B2 JP 5113961B2 JP 2007525352 A JP2007525352 A JP 2007525352A JP 2007525352 A JP2007525352 A JP 2007525352A JP 5113961 B2 JP5113961 B2 JP 5113961B2
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well region
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well
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JP2007525352A
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Japanese (ja)
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JP2008510294A5 (enExample
JP2008510294A (ja
Inventor
マダチル，サンカラ，ナラヤナン，エッカナス
スウィート，マーク，ロバート
バーシニン，コンスタンチン，ブラディスラヴォヴィッチ
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エコ・セミコンダクターズ・リミテッド
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Publication of JP2008510294A5 publication Critical patent/JP2008510294A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

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  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2007525352A 2004-08-10 2005-08-10 バイポーラｍｏｓｆｅｔ素子 Expired - Fee Related JP5113961B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0417749.9 2004-08-10
GBGB0417749.9A GB0417749D0 (en) 2004-08-10 2004-08-10 Improved bipolar MOSFET devices and methods for their use
PCT/GB2005/003146 WO2006016160A1 (en) 2004-08-10 2005-08-10 Bipolar mosfet devices

Publications (3)

Publication Number Publication Date
JP2008510294A JP2008510294A (ja) 2008-04-03
JP2008510294A5 JP2008510294A5 (enExample) 2008-10-02
JP5113961B2 true JP5113961B2 (ja) 2013-01-09

Family

ID=32982782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007525352A Expired - Fee Related JP5113961B2 (ja) 2004-08-10 2005-08-10 バイポーラｍｏｓｆｅｔ素子

Country Status (5)

Country Link
US (1) US7893457B2 (enExample)
EP (1) EP1782482A1 (enExample)
JP (1) JP5113961B2 (enExample)
GB (1) GB0417749D0 (enExample)
WO (1) WO2006016160A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
ITTO20080045A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
US20100213507A1 (en) * 2009-02-20 2010-08-26 Ching-Chung Ko Lateral bipolar junction transistor
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor
US7897995B2 (en) * 2009-04-07 2011-03-01 Mediatek Inc. Lateral bipolar junction transistor with reduced base resistance
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US8264035B2 (en) * 2010-03-26 2012-09-11 Force Mos Technology Co., Ltd. Avalanche capability improvement in power semiconductor devices
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
JP5537359B2 (ja) * 2010-09-15 2014-07-02 株式会社東芝 半導体装置
JP5480084B2 (ja) 2010-09-24 2014-04-23 株式会社東芝 半導体装置
KR101352766B1 (ko) 2011-12-08 2014-01-15 서강대학교산학협력단 엔모스를 삽입한 수평형 절연게이트 바이폴라트랜지스터 소자
JP2014060362A (ja) 2012-09-19 2014-04-03 Toshiba Corp 半導体装置
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9029909B2 (en) 2013-06-24 2015-05-12 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
JP6659685B2 (ja) 2014-11-06 2020-03-04 アイディール パワー インコーポレイテッド ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。
DE112015002120B4 (de) * 2014-12-19 2024-02-22 Fuji Electric Co., Ltd. Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren
US9520492B2 (en) * 2015-02-18 2016-12-13 Macronix International Co., Ltd. Semiconductor device having buried layer
WO2017043607A1 (ja) * 2015-09-09 2017-03-16 住友電気工業株式会社 縦型炭化珪素半導体装置のトレンチのアニール処理装置、縦型炭化珪素半導体装置の製造方法および縦型炭化珪素半導体装置
GB201604796D0 (en) * 2015-11-10 2016-05-04 Analog Devices Global A combined isolator and power switch
US9935628B2 (en) 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
GB2606383A (en) * 2021-05-06 2022-11-09 Eco Semiconductors Ltd A semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2941405B2 (ja) * 1990-10-25 1999-08-25 株式会社東芝 半導体装置
US5483087A (en) * 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
AU6272798A (en) * 1997-02-07 1998-08-26 James Albert Cooper Jr. Structure for increasing the maximum voltage of silicon carbide power transistors
DE19816448C1 (de) * 1998-04-14 1999-09-30 Siemens Ag Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung
JP4761011B2 (ja) * 1999-05-26 2011-08-31 株式会社豊田中央研究所 サイリスタを有する半導体装置及びその製造方法
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP2001177091A (ja) * 1999-12-07 2001-06-29 Analog & Power Electronics Corp ラッチ制御可能な絶縁ゲートバイポーラトランジスタ
DE10026925C2 (de) * 2000-05-30 2002-04-18 Infineon Technologies Ag Feldeffektgesteuertes, vertikales Halbleiterbauelement
JP3506676B2 (ja) * 2001-01-25 2004-03-15 Ｎｅｃエレクトロニクス株式会社 半導体装置
US6465304B1 (en) * 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP2004103980A (ja) * 2002-09-12 2004-04-02 Toshiba Corp 半導体装置
JP4209260B2 (ja) * 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
GB0417749D0 (en) 2004-09-08
EP1782482A1 (en) 2007-05-09
US20080191238A1 (en) 2008-08-14
JP2008510294A (ja) 2008-04-03
WO2006016160A1 (en) 2006-02-16
US7893457B2 (en) 2011-02-22

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